Patents by Inventor Katsuhiko Koui

Katsuhiko Koui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220302371
    Abstract: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.
    Type: Application
    Filed: August 31, 2021
    Publication date: September 22, 2022
    Inventors: Katsuhiko KOUI, Masaru TOKO, Soichi OIKAWA, Hideyuki SUGIYAMA
  • Patent number: 11017827
    Abstract: A magnetic device includes: a first conductive layer; a first magnetoresistive effect element disposed on the first conductive layer and including a first control terminal; and a first circuit configured to supply a first current in a first direction into the first conductive layer and apply a first control voltage to the first control terminal of the first magnetoresistive effect element, wherein in a case in which the first current is supplied to the first conductive layer, the first magnetoresistive effect element holds a value corresponding to a logical disjunction between a first value of first data in the first magnetoresistive effect element and a second value of the first control voltage corresponding to second data.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: May 25, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tomoaki Inokuchi, Naoharu Shimomura, Katsuhiko Koui, Yuuzo Kamiguchi, Kazutaka Ikegami, Shinobu Fujita, Hiroaki Yoda
  • Patent number: 10902900
    Abstract: A magnetic memory device includes a conductive member, a stacked body, and a controller. The stacked body includes a first magnetic layer, a second magnetic layer provided between the conductive member and the first magnetic layer, and a third magnetic layer stacked with the first magnetic layer and the second magnetic layer. The controller causes a current to flow in the conductive member. The controller causes a current to flow between the conductive member and the stacked body. The controller is able to identify three or more levels of an electrical resistance value of the stacked body.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: January 26, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuhiko Koui, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura, Hideyuki Sugiyama
  • Patent number: 10896708
    Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: January 19, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki Inokuchi, Katsuhiko Koui, Naoharu Shimomura, Hideyuki Sugiyama, Kazutaka Ikegami, Susumu Takeda, Satoshi Takaya, Shinobu Fujita, Hiroaki Yoda
  • Patent number: 10867649
    Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: December 15, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroaki Yoda, Satoshi Takaya, Yuichi Ohsawa, Naoharu Shimomura, Katsuhiko Koui, Yushi Kato, Shinobu Fujita
  • Patent number: 10811067
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: October 20, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Altansargai Buyandalai, Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Hiroaki Yoda, Katsuhiko Koui
  • Patent number: 10783947
    Abstract: According to one embodiment, a magnetic memory device includes a first member, a first memory cell, and a controller. The first member includes first, second, and third regions. The first memory cell includes first and second magnetic layers, and a first nonmagnetic layer. The second magnetic layer is provided between the third region and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second regions, and the first magnetic layer. The controller programs first information to the first memory cell by setting the first magnetic layer to a first electric potential. The controller programs second information to the first memory cell by setting the first magnetic layer to a second electric potential. The second electric potential is different from the first electric potential. The second information is different from the first information.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: September 22, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuhiko Koui, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura
  • Publication number: 20200279596
    Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.
    Type: Application
    Filed: January 13, 2020
    Publication date: September 3, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tomoaki INOKUCHI, Katsuhiko KOUI, Naoharu SHIMOMURA, Hideyuki SUGIYAMA, Kazutaka IKEGAMI, Susumu TAKEDA, Satoshi TAKAYA, Shinobu FUJITA, Hiroaki YODA
  • Publication number: 20200090718
    Abstract: A magnetic memory device includes a conductive member, a stacked body, and a controller. The stacked body includes a first magnetic layer, a second magnetic layer provided between the conductive member and the first magnetic layer, and a third magnetic layer stacked with the first magnetic layer and the second magnetic layer. The controller causes a current to flow in the conductive member. The controller causes a current to flow between the conductive member and the stacked body. The controller is able to identify three or more levels of an electrical resistance value of the stacked body.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 19, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Katsuhiko KOUI, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura, Hideyuki Sugiyama
  • Publication number: 20200020374
    Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.
    Type: Application
    Filed: February 12, 2019
    Publication date: January 16, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki YODA, Satoshi Takaya, Yuichi Ohsawa, Naoharu Shimomura, Katsuhiko Koui, Yushi Kato, Shinobu Fujita
  • Patent number: 10529399
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: January 7, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuichi Ohsawa, Mariko Shimizu, Satoshi Shirotori, Hideyuki Sugiyama, Altansargai Buyandalai, Hiroaki Yoda, Katsuhiko Koui, Tomoaki Inokuchi, Naoharu Shimomura
  • Patent number: 10438616
    Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 8, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenichiro Yamada, Shuichi Murakami, Naoyuki Narita, Katsuhiko Koui, Akihiko Takeo, Mariko Shimizu, Hitoshi Iwasaki
  • Publication number: 20190295619
    Abstract: According to one embodiment, a magnetic device includes: a first conductive layer; a first magnetoresistive effect element disposed on the first S conductive layer and including a first control terminal; and a first circuit configured to supply a first current in a first direction into the first conductive layer and apply a first control voltage to the first control terminal of the first magnetoresistive effect element, wherein in a case in which the first current is supplied to the first conductive layer, the first magnetoresistive effect element holds a value corresponding to a logical disjunction between a first value of first data in the first magnetoresistive effect element and a second value of the first control voltage corresponding to second data.
    Type: Application
    Filed: September 17, 2018
    Publication date: September 26, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki INOKUCHI, Naoharu SHIMOMURA, Katsuhiko KOUI, Yuuzo KAMIGUCHI, Kazutaka IKEGAMI, Shinobu FUJITA, Hiroaki YODA
  • Publication number: 20190287589
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.
    Type: Application
    Filed: August 31, 2018
    Publication date: September 19, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Altansargai BUYANDALAI, Satoshi SHIROTORI, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Hiroaki YODA, Katsuhiko KOUI
  • Publication number: 20190287597
    Abstract: According to one embodiment, a magnetic memory device includes a first member, a first memory cell, and a controller. The first member includes first, second, and third regions. The first memory cell includes first and second magnetic layers, and a first nonmagnetic layer. The second magnetic layer is provided between the third region and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second regions, and the first magnetic layer. The controller programs first information to the first memory cell by setting the first magnetic layer to a first electric potential. The controller programs second information to the first memory cell by setting the first magnetic layer to a second electric potential. The second electric potential is different from the first electric potential. The second information is different from the first information.
    Type: Application
    Filed: August 31, 2018
    Publication date: September 19, 2019
    Applicant: Kabushiki Kaisaha Toshiba
    Inventors: Katsuhiko KOUI, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura
  • Publication number: 20190279699
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.
    Type: Application
    Filed: August 21, 2018
    Publication date: September 12, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yuichi Ohsawa, Mariko Shimizu, Satoshi Shirotori, Hideyuki Sugiyama, Altansargai Buyandalai, Hiroaki Yoda, Katsuhiko Koui, Tomoaki Inokuchi, Naoharu Shimomura
  • Patent number: 10410707
    Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: September 10, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tomoaki Inokuchi, Naoharu Shimomura, Katsuhiko Koui, Yuuzo Kamiguchi, Satoshi Shirotori, Kazutaka Ikegami, Hiroaki Yoda
  • Patent number: 10361358
    Abstract: A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: July 23, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Keiko Abe, Kazutaka Ikegami, Shinobu Fujita, Katsuhiko Koui, Tomoaki Inokuchi, Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Hiroaki Yoda, Naoharu Shimomura, Yuuzo Kamiguchi
  • Patent number: 10347313
    Abstract: According to one embodiment, a magnetic memory includes: magnetoresistive effect elements arranged on an conductive layer; and a first circuit which passes a write current through the conductive layer and applies a control voltage to the magnetoresistive effect elements, to write data including a first value and a second value into the magnetoresistive effect elements. The first circuit adjusts at least one of a write sequence of the first value and the second value, a current value of the write current, and a pulse width of the write current, on the basis of an arrangement of the first value and the second value in the data.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: July 9, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naoharu Shimomura, Tomoaki Inokuchi, Katsuhiko Koui, Yuzo Kamiguchi, Hiroaki Yoda, Hideyuki Sugiyama
  • Publication number: 20190115047
    Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.
    Type: Application
    Filed: December 13, 2018
    Publication date: April 18, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kenichiro YAMADA, Shuichi MURAKAMI, Naoyuki NARITA, Katsuhiko KOUI, Akihiko TAKEO, Mariko SHIMIZU, Hitoshi IWASAKI