Patents by Inventor Katsuhiko Koui
Katsuhiko Koui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220302371Abstract: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.Type: ApplicationFiled: August 31, 2021Publication date: September 22, 2022Inventors: Katsuhiko KOUI, Masaru TOKO, Soichi OIKAWA, Hideyuki SUGIYAMA
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Patent number: 11017827Abstract: A magnetic device includes: a first conductive layer; a first magnetoresistive effect element disposed on the first conductive layer and including a first control terminal; and a first circuit configured to supply a first current in a first direction into the first conductive layer and apply a first control voltage to the first control terminal of the first magnetoresistive effect element, wherein in a case in which the first current is supplied to the first conductive layer, the first magnetoresistive effect element holds a value corresponding to a logical disjunction between a first value of first data in the first magnetoresistive effect element and a second value of the first control voltage corresponding to second data.Type: GrantFiled: September 17, 2018Date of Patent: May 25, 2021Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Naoharu Shimomura, Katsuhiko Koui, Yuuzo Kamiguchi, Kazutaka Ikegami, Shinobu Fujita, Hiroaki Yoda
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Patent number: 10902900Abstract: A magnetic memory device includes a conductive member, a stacked body, and a controller. The stacked body includes a first magnetic layer, a second magnetic layer provided between the conductive member and the first magnetic layer, and a third magnetic layer stacked with the first magnetic layer and the second magnetic layer. The controller causes a current to flow in the conductive member. The controller causes a current to flow between the conductive member and the stacked body. The controller is able to identify three or more levels of an electrical resistance value of the stacked body.Type: GrantFiled: March 13, 2019Date of Patent: January 26, 2021Assignee: Kabushiki Kaisha ToshibaInventors: Katsuhiko Koui, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura, Hideyuki Sugiyama
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Patent number: 10896708Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.Type: GrantFiled: January 13, 2020Date of Patent: January 19, 2021Assignee: Kabushiki Kaisha ToshibaInventors: Tomoaki Inokuchi, Katsuhiko Koui, Naoharu Shimomura, Hideyuki Sugiyama, Kazutaka Ikegami, Susumu Takeda, Satoshi Takaya, Shinobu Fujita, Hiroaki Yoda
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Patent number: 10867649Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.Type: GrantFiled: February 12, 2019Date of Patent: December 15, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Satoshi Takaya, Yuichi Ohsawa, Naoharu Shimomura, Katsuhiko Koui, Yushi Kato, Shinobu Fujita
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Patent number: 10811067Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.Type: GrantFiled: August 31, 2018Date of Patent: October 20, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Altansargai Buyandalai, Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Hiroaki Yoda, Katsuhiko Koui
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Patent number: 10783947Abstract: According to one embodiment, a magnetic memory device includes a first member, a first memory cell, and a controller. The first member includes first, second, and third regions. The first memory cell includes first and second magnetic layers, and a first nonmagnetic layer. The second magnetic layer is provided between the third region and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second regions, and the first magnetic layer. The controller programs first information to the first memory cell by setting the first magnetic layer to a first electric potential. The controller programs second information to the first memory cell by setting the first magnetic layer to a second electric potential. The second electric potential is different from the first electric potential. The second information is different from the first information.Type: GrantFiled: August 31, 2018Date of Patent: September 22, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Katsuhiko Koui, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura
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Publication number: 20200279596Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first element portion, and a controller. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first element portion includes a first element, a first interconnect, and a first circuit. The first element includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first counter magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first counter magnetic layer and the first magnetic layer. The first interconnect is electrically connected to the first magnetic layer. The first circuit is electrically connected to the first interconnect. The first circuit includes a first switch, a first capacitance element, a first parallel switch, and a first parallel capacitance element.Type: ApplicationFiled: January 13, 2020Publication date: September 3, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki INOKUCHI, Katsuhiko KOUI, Naoharu SHIMOMURA, Hideyuki SUGIYAMA, Kazutaka IKEGAMI, Susumu TAKEDA, Satoshi TAKAYA, Shinobu FUJITA, Hiroaki YODA
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Publication number: 20200090718Abstract: A magnetic memory device includes a conductive member, a stacked body, and a controller. The stacked body includes a first magnetic layer, a second magnetic layer provided between the conductive member and the first magnetic layer, and a third magnetic layer stacked with the first magnetic layer and the second magnetic layer. The controller causes a current to flow in the conductive member. The controller causes a current to flow between the conductive member and the stacked body. The controller is able to identify three or more levels of an electrical resistance value of the stacked body.Type: ApplicationFiled: March 13, 2019Publication date: March 19, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Katsuhiko KOUI, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura, Hideyuki Sugiyama
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Publication number: 20200020374Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.Type: ApplicationFiled: February 12, 2019Publication date: January 16, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki YODA, Satoshi Takaya, Yuichi Ohsawa, Naoharu Shimomura, Katsuhiko Koui, Yushi Kato, Shinobu Fujita
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Patent number: 10529399Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.Type: GrantFiled: August 21, 2018Date of Patent: January 7, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Mariko Shimizu, Satoshi Shirotori, Hideyuki Sugiyama, Altansargai Buyandalai, Hiroaki Yoda, Katsuhiko Koui, Tomoaki Inokuchi, Naoharu Shimomura
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Patent number: 10438616Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.Type: GrantFiled: December 13, 2018Date of Patent: October 8, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Kenichiro Yamada, Shuichi Murakami, Naoyuki Narita, Katsuhiko Koui, Akihiko Takeo, Mariko Shimizu, Hitoshi Iwasaki
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Publication number: 20190295619Abstract: According to one embodiment, a magnetic device includes: a first conductive layer; a first magnetoresistive effect element disposed on the first S conductive layer and including a first control terminal; and a first circuit configured to supply a first current in a first direction into the first conductive layer and apply a first control voltage to the first control terminal of the first magnetoresistive effect element, wherein in a case in which the first current is supplied to the first conductive layer, the first magnetoresistive effect element holds a value corresponding to a logical disjunction between a first value of first data in the first magnetoresistive effect element and a second value of the first control voltage corresponding to second data.Type: ApplicationFiled: September 17, 2018Publication date: September 26, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Tomoaki INOKUCHI, Naoharu SHIMOMURA, Katsuhiko KOUI, Yuuzo KAMIGUCHI, Kazutaka IKEGAMI, Shinobu FUJITA, Hiroaki YODA
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Publication number: 20190287597Abstract: According to one embodiment, a magnetic memory device includes a first member, a first memory cell, and a controller. The first member includes first, second, and third regions. The first memory cell includes first and second magnetic layers, and a first nonmagnetic layer. The second magnetic layer is provided between the third region and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second regions, and the first magnetic layer. The controller programs first information to the first memory cell by setting the first magnetic layer to a first electric potential. The controller programs second information to the first memory cell by setting the first magnetic layer to a second electric potential. The second electric potential is different from the first electric potential. The second information is different from the first information.Type: ApplicationFiled: August 31, 2018Publication date: September 19, 2019Applicant: Kabushiki Kaisaha ToshibaInventors: Katsuhiko KOUI, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura
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Publication number: 20190287589Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.Type: ApplicationFiled: August 31, 2018Publication date: September 19, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Altansargai BUYANDALAI, Satoshi SHIROTORI, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Hiroaki YODA, Katsuhiko KOUI
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Publication number: 20190279699Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.Type: ApplicationFiled: August 21, 2018Publication date: September 12, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Mariko Shimizu, Satoshi Shirotori, Hideyuki Sugiyama, Altansargai Buyandalai, Hiroaki Yoda, Katsuhiko Koui, Tomoaki Inokuchi, Naoharu Shimomura
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Patent number: 10410707Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.Type: GrantFiled: June 18, 2018Date of Patent: September 10, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Naoharu Shimomura, Katsuhiko Koui, Yuuzo Kamiguchi, Satoshi Shirotori, Kazutaka Ikegami, Hiroaki Yoda
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Patent number: 10361358Abstract: A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.Type: GrantFiled: September 14, 2017Date of Patent: July 23, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Keiko Abe, Kazutaka Ikegami, Shinobu Fujita, Katsuhiko Koui, Tomoaki Inokuchi, Satoshi Shirotori, Yuichi Ohsawa, Hideyuki Sugiyama, Hiroaki Yoda, Naoharu Shimomura, Yuuzo Kamiguchi
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Patent number: 10347313Abstract: According to one embodiment, a magnetic memory includes: magnetoresistive effect elements arranged on an conductive layer; and a first circuit which passes a write current through the conductive layer and applies a control voltage to the magnetoresistive effect elements, to write data including a first value and a second value into the magnetoresistive effect elements. The first circuit adjusts at least one of a write sequence of the first value and the second value, a current value of the write current, and a pulse width of the write current, on the basis of an arrangement of the first value and the second value in the data.Type: GrantFiled: March 8, 2018Date of Patent: July 9, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoharu Shimomura, Tomoaki Inokuchi, Katsuhiko Koui, Yuzo Kamiguchi, Hiroaki Yoda, Hideyuki Sugiyama
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Publication number: 20190115047Abstract: According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.Type: ApplicationFiled: December 13, 2018Publication date: April 18, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Kenichiro YAMADA, Shuichi MURAKAMI, Naoyuki NARITA, Katsuhiko KOUI, Akihiko TAKEO, Mariko SHIMIZU, Hitoshi IWASAKI