Abstract: A glass lining that has an excellent balance between a hydrophilic property and a hydrophobic property on its surface, that has less adhesion of dirt than a typical GL since having an excellent stain-proof property against both oily stains and aqueous stains, and that can maintain the stain-proof property and the self-cleaning performance for a long time after the glass lining is cleaned, leading to excellent cleaning performance and low dirt-adhesion. The glass lining includes a lining and a conductive inorganic compound contained in the lining. The glass lining is structured to have a plurality of hydrophilic concave portions and net-like hydrophobic convex portions connecting peripheries of the plurality of hydrophilic concave portions.

Abstract: A substrate processing method according to an embodiment is a substrate processing method for drying a substrate. The substrate processing method includes supplying a solution in which a sublimation material is dissolved in a first solvent to a surface of a cleaned substrate. The substrate processing method includes eliminating at least a portion of association states of the sublimation material. The substrate processing method includes precipitating the sublimation material on the surface of the substrate. The substrate processing method includes removing the precipitated sublimation material by sublimation.

Abstract: A door handle apparatus for a vehicle includes an outside handle configured by a first handle member and a second handle member which are integrally fixed to each other via a fixing mechanism configured by a plurality of engagement tabs, a pedestal portion and a stopper member, the engagement tabs being provided at one of the first handle member and the second handle member, and arranged to be separated from each other by a space portion which is predetermined and to face each other, the pedestal portion being provided at the other of the first handle member and the second handle member, and including an engagement hole into which the engagement tabs are insertable, and the stopper member being inserted in the space portion between the plurality of engagement tabs which is in a state of being inserted in the engagement hole of the pedestal portion.

Abstract: According to one embodiment, a processing apparatus includes a first supply section, a second supply section, a gas supply section, and a sublimation section. The first supply section supplies a first fluid on surfaces of a plurality of workpieces. The second supply section supplies a fluid containing a sublimable material on the surfaces of the plurality of workpieces to which the first fluid is supplied. The gas supply section supplies gas on the surfaces of the plurality of workpieces to which a fluid containing the sublimable material is supplied. The sublimation section sublimates a layer containing the sublimable material formed on each surface of the plurality of workpieces. The gas supply section controls a thickness of the layer containing the sublimable material formed each surface of the plurality of workpieces by controlling a flow velocity of the gas in each surface of the plurality of workpieces.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion.

Abstract: In one embodiment, a substrate treatment apparatus includes cleaning and rinse modules configured to clean and rinse a surface of a substrate provided with a pattern, and a solidifying agent containing liquid supplying module configured to supply a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The apparatus further includes a precipitation module configured to precipitate the solidifying agent as solid on the surface of the substrate, and a decomposition module configured to decompose and gasify the solid to remove the solid from the surface of the substrate. The solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or atom group.

Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Abstract: An electrostatic coating device comprising a nozzle section that discharges a liquid to a substrate, a counter electrode that is disposed in such a way as to face the nozzle section and supports the substrate and a power source device that applies a voltage between the nozzle section and the counter electrode further comprises an instantaneous stop circuit that selectively grounds the nozzle section. When the nozzle section is grounded by the instantaneous stop circuit, a charge remaining in the nozzle section goes to the ground and the charge remaining in the nozzle section disappears. For this reason, after the power source device is turned off, dripping of the liquid from the nozzle section can be completed as quickly as possible.

Abstract: A substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.

Abstract: In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

Abstract: According to an embodiment, a substrate treatment apparatus includes a tank and a control mechanism. The tank houses a substrate including a silicon oxide film and a silicon nitride film, and receives a supply of a phosphoric acid solution capable of selectively etching the silicon nitride film rather than the silicon oxide film. The control mechanism controls an etching state of the silicon nitride film in the tank, by alternately switching two modes based on preset time allocation. The two modes include a first mode in which a first phosphoric acid solution is contact with the substrate and a second mode in which a second phosphoric acid solution with a selection ratio of the silicon nitride film to the silicon oxide film different from that of the first phosphoric acid solution, is contact with the substrate.

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

Abstract: The substrate treatment apparatus includes a first nozzle, a second nozzle, a detector, and a controller. The first nozzle supplies an organic sublimable material-containing liquid capable of displacing a rinsing liquid, to a surface of a substrate treated with the rinsing liquid. The second nozzle supplies vapor of a solvent in which the organic sublimable material is capable of dissolving, to the surface of the substrate. The detector detects a first physical amount of the vapor on the surface of the substrate. The controller controls a second physical amount of the vapor according to the first physical amount.

Abstract: A substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

Abstract: A glass lining that has an excellent balance between a hydrophilic property and a hydrophobic property on its surface, that has less adhesion of dirt than a typical GL since having an excellent stain-proof property against both oily stains and aqueous stains, and that can maintain the stain-proof property and the self-cleaning performance for a long time after the glass lining is cleaned, leading to excellent cleaning performance and low dirt-adhesion. The glass lining includes a lining and a conductive inorganic compound contained in the lining. The glass lining is structured to have a plurality of hydrophilic concave portions and net-like hydrophobic convex portions connecting peripheries of the plurality of hydrophilic concave portions.

Abstract: According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.

Abstract: A door handle apparatus for a vehicle includes an outside handle configured by a first handle member and a second handle member which are integrally fixed to each other via a fixing mechanism configured by a plurality of engagement tabs, a pedestal portion and a stopper member, the engagement tabs being provided at one of the first handle member and the second handle member, and arranged to be separated from each other by a space portion which is predetermined and to face each other, the pedestal portion being provided at the other of the first handle member and the second handle member, and including an engagement hole into which the engagement tabs are insertable, and the stopper member being inserted in the space portion between the plurality of engagement tabs which is in a state of being inserted in the engagement hole of the pedestal portion.