Abstract: A light emitting apparatus includes a substrate, a laminated structure provided at the substrate and including a plurality of columnar sections, and an electrode provided on the side opposite the substrate with respect to the laminated structure and injecting current into the laminated structure. The columnar sections each include an n-type first GaN layer, a p-type second GaN layer, and a light emitting layer provided between the first GaN layer and the second GaN layer. The first GaN layers are provided between the light emitting layers and the substrate. The laminated structure includes a p-type first AlGaN layer. The first AlGaN layer includes a first section provided between the second GaN layers of the columnar sections adjacent to each other and a second section provided between the first section and the electrode and between the columnar sections and the electrode.

Abstract: A light-emitting device includes a substrate, a laminated structure having a plurality of column portions, and an electrode provided on a side of the laminated structure opposite from the substrate. Each of the plurality of column portions includes a light-emitting layer. The electrode is provided with a plurality of first holes. A diameter of each of the plurality of first holes is less than a wavelength of light generated by the light-emitting layer. A distance between adjacent first holes of the plurality of first holes is less than the wavelength of light generated by the light-emitting layer.

Abstract: A light-emitting device that includes a substrate, and at least one column portion, wherein the column portion includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is provided between the substrate and the light-emitting layer, the light-emitting layer includes a first well layer, and a barrier layer, the barrier layer includes a first layer provided between the first semiconductor layer and the first well layer, and the first layer has a cubic crystal structure.

Abstract: A light-emitting device includes a substrate, a laminated structure having a plurality of column portions, and an electrode provided on a side of the laminated structure opposite to the substrate. Each of the plurality of column portions includes a light-emitting layer. The electrode is provided with a plurality of first holes. The plurality of column portions form a first photonic crystal. The electrode forms a second photonic crystal. The first photonic crystal and the second photonic crystal are optically coupled to each other.

Abstract: A light-emitting device includes a substrate, a laminated structure having a plurality of column portions, and an electrode provided on a side of the laminated structure opposite from the substrate. Each of the plurality of column portions includes a light-emitting layer. The electrode is provided with a plurality of first holes. A diameter of each of the plurality of first holes is less than a wavelength of light generated by the light-emitting layer. A distance between adjacent first holes of the plurality of first holes is less than the wavelength of light generated by the light-emitting layer.

Abstract: There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of first columnar portions and a plurality of second columnar portions; and a first electrode and a second electrode, in which the first columnar portion includes a first semiconductor layer, a second semiconductor layer having a conductivity type different from the first semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, light generated in the light emitting layer propagates through the plurality of first columnar portions and the plurality of second columnar portions, a height of the second columnar portion is equal to or larger than a sum of a thickness of the first semiconductor layer and a thickness of the light emitting layer, and is lower than a height of the first columnar portion, the first semiconductor layer is provided between the substrate and the light emitting layer, the first elec

Abstract: A light-emitting device includes: a substrate; first column portions provided at the substrate; a plurality of second column portions provided at the substrate and that surround the first column portions as viewed from a normal direction of the substrate; a first semiconductor layer coupled to the first column portions; an insulating layer covering the first semiconductor layer and the second column portions; and a wiring line electrically coupled to the first semiconductor layer. Each of the first column portions and each of the second column portions includes an n-type second semiconductor layer, a p-type third semiconductor layer, and a u-type fourth semiconductor layer. The fourth semiconductor layer at each of the first column portions is injected with current to emit light. The fourth semiconductor layer at each of the second column portions is not injected with current. The wiring line overlaps at least one of the second column portions.

Abstract: A light-emitting device includes a laminate provided at a substrate, a first electrode provided on an opposite side of the laminate from the substrate, and a second electrode provided on an opposite side of the first electrode from the substrate. The laminate includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer is provided between the substrate and the light-emitting layer. The first electrode constitutes a plurality of column portions. The second electrode is coupled to the plurality of column portions. The first electrode is a transparent electrode formed of a metal oxide transmitting light generated at the light-emitting layer.

Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diamet

Abstract: A light emitting apparatus includes an electrode and a laminated structure. The laminated structure includes an n-type first semiconductor layer, a light emitting layer, a p-type second semiconductor layer, a tunnel junction layer, and an n-type third semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The first semiconductor layer, the light emitting layer, the second semiconductor layer, the tunnel junction layer, and the third semiconductor layer are arranged in a presented order. The light emitting layer and the first semiconductor layer form a columnar section.

Abstract: There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of columnar portions, in which the columnar portion includes an n-type first semiconductor layer, a p-type second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, and a third semiconductor layer having a band gap larger than that of the light emitting layer, and the third semiconductor layer includes a first part provided between the light emitting layer and the second semiconductor layer, and a second part that is in contact with a side surface of the light emitting layer.

Abstract: The light emitting device includes a substrate, and a laminated structure including columnar parts, wherein the columnar parts include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the light emitting layer has a c-plane and a facet plane, the second semiconductor layer is disposed on the c-plane and the facet plane, the first semiconductor layer has a first portion and a second portion smaller in diametrical size than the first portion, the second portion is disposed between the substrate and the first portion, and the c-plane and the second portion overlap each other, and the c-plane is smaller in diametrical size than the second portion in a plan view from a stacking direction of the first semiconductor layer and the light emitting layer.

Abstract: A light emitting apparatus includes a laminated structure provided at a substrate and including a plurality of columnar sections. The plurality of columnar sections each includes a light emitting layer including a plurality of first well layers, a first semiconductor layer provided between the substrate and the light emitting layer and containing Ga and N, an optical confining layer provided between the first semiconductor layer and the light emitting layer and confining light in the light emitting layer, and a second well layer provided between the first semiconductor layer and the optical confining layer. The first well layers and the second well layer are made of InGaN. The optical confining layer includes an InGaN layer. The composition formula of the first well layers is InxGa1-xN. The composition formula of the InGaN layer of the optical confining layer is InyGa1-yN. The composition formula of the second well layer is InzGa1-zN. The parameters x, y, and z satisfy 0<y<z<x<1.

Abstract: A light emitting apparatus includes a substrate and a laminated structure provided at a substrate surface of the substrate and including a plurality of columnar sections. The columnar sections each include a light emitting layer which has a first end facing the substrate and a second end facing away from the substrate. A first cross section of each of the columnar sections taken along the directions perpendicular to the lamination direction of the laminated structure includes the first end. A second cross section of each of the columnar sections taken along the directions perpendicular to the lamination direction is a cross section that is part of the light emitting layer and located at a position shifted from the first cross section toward the side away from the substrate in the lamination direction. In the plan view viewed in the lamination direction, the position of the center of the first cross section differs from the position of the center of the second cross section.

Abstract: A light-emitting device includes: a substrate; and a laminated structure provided at the substrate and having a plurality of columnar parts. The columnar part has: an n-type first semiconductor layer; a p-type second semiconductor layer; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; and an electrode provided on a side opposite to a side of the substrate, of the laminated structure. The first semiconductor layer is provided between the light-emitting layer and the substrate. An end part on a side opposite to a side of the substrate, of the light-emitting layer, has a first facet surface. An end part on a side opposite to a side of the substrate, of the second semiconductor layer, has a second facet surface. A relation of ?2??1 is satisfied, where ?1 is a taper angle of the first facet surface, and ?2 is a taper angle of the second facet surface. ?1 is 70° or smaller, and ?2 is 30° or greater.

Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar portions. The plurality of columnar portions each includes a first semiconductor layer, a second semiconductor layer different from the first semiconductor layer in terms of conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first section, and a second section that surrounds the first section in a plan view along a lamination direction in which the first semiconductor layer and the light emitting layer are laminated structured on each other and has a bandgap wider than a bandgap of the first section. The second section forms a side surface of each of the columnar portions.

Abstract: In a light emitting device, a columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the light emitting layer includes a first layer, and a second layer larger in bandgap than the first layer, the first semiconductor layer has a facet plane, the first layer has a facet plane, the facet plane of the first semiconductor layer is provided with the first layer, and ?2>?1, in which ?1 is a tilt angle of the facet plane of the first semiconductor layer with respect to a surface of the substrate provided with the laminated structure, and ?2 is a tilt angle of the facet plane of the first layer provided to the facet plane of the first semiconductor layer with respect to the surface of the substrate.

Abstract: A light emitting apparatus includes a laminate including a columnar section. The columnar section includes an n-type semiconductor layer, a first p-type semiconductor layer, a light emitting layer provided between the n-type semiconductor layer and the first p-type semiconductor layer, and a second p-type semiconductor layer in contact with the first p-type semiconductor layer. The first p-type semiconductor layer is provided between the light emitting layer and the second p-type semiconductor layer. The first p-type semiconductor layer has a c-plane and a facet surface. The second p-type semiconductor layer has a c-plane region provided at the c-plane and a facet-surface region provided at the facet surface. The c-plane region has negatively polarized charges at an interface with the first p-type semiconductor layer. The facet-surface region has positively polarized charges at the interface.

Abstract: There is provided a light emitting device including: a substrate; and a laminated structure provided on the substrate and having a plurality of columnar portion groups, in which the columnar portion group includes at least one first columnar portion, and a plurality of second columnar portions, the first columnar portion has a light emitting layer into which a current is injected to generate light, no current is injected into the second columnar portion, an optical confinement mode is formed in the plurality of columnar portion groups, the first columnar portion is disposed at a position that overlaps a peak of electric field intensity, and the second columnar portion is disposed at a position that does not overlap the peak of electric field intensity.

Abstract: A light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a columnar part, wherein the columnar part includes a first GaN layer having a first conductivity type, a second GaN layer having a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first GaN layer and the second GaN layer, the first GaN layer is disposed between the substrate and the light emitting layer, the light emitting layer has a first well layer as an InGaN layer, the first GaN layer has a c-face region, the first GaN layer has a crystal structure of a cubical crystal, and has a first layer constituting the c-face region, and a second layer as a GaN layer having a crystal structure of a hexagonal crystal is disposed between the first layer and the first well layer.