Abstract: Provided is a Kelvin contact for inspection in which contacts and an insulating layer are less likely to be shifted relative to each other even after repeatedly performed Kelvin inspection. The Kelvin contact for inspection includes: a first contact having an upper contact point that comes into contact with one electrode terminal of an IC device and a lower contact point that comes into contact with an electrode pad of a substrate for inspection; and a second contact having an upper contact point that comes into contact with the one electrode terminal and the lower contact point that comes into contact with an electrode pad of the substrate for inspection. The first and second contacts are adjacently arranged to contact with the same one electrode terminal and provided with an insulating layer surrounding the entire main body area except upper and lower contact point areas including the upper and lower contact points, respectively.

Abstract: The cylindrical member includes a cylindrical base material 40 made of beryllium copper, a first coating layer that is formed on the base material 40 and made of a Ni-based material and serves as a reinforcing material for the base material 40, and a second coating layer 42 that is formed on the first coating layers and made of a metal-based material different from the base material 40, wherein the first coating layer 41 has higher hardness than the base material 40, when the thickness of the base material 40 is represented by TB and the layer thickness of the first coating layer 41 formed on the outer surface is represented by T1OUT, the base material 40 is formed so as to satisfy 13 ?m?TB?25 ?m, and the first coating layer 41 is formed so as to satisfy T1OUT?TB×4%.

Abstract: The contact probe comprises a barrel 50, an inspection device side terminal 60, a test board side terminal 70, and a spring 80 disposed in a state of being in contact with the test board side terminal 70 and the inspection device side terminal 60, the test board side terminal 70 includes a stop portion 74 that can abut on the caulked portion 52 in the barrel 50 and a terminal body that projects from the other end 56 of the barrel 50, and the terminal body includes, in order from a tip end, a first shaft section 71, a second shaft section 72 having a diameter larger than a diameter of the first shaft section 71, and a third shaft section 73 having a diameter smaller than the diameter of the second shaft section 72 and having at least a part that can be housed in the barrel 50.

Abstract: Provided is a socket for inspection that can correct inclination of a terminal in contact with a device under inspection to stabilize the terminal-to-electrode contact. The socket includes: a contact terminal having a barrel with a flange, a device side terminal, a test board side terminal, and a spring; a housing having a stepped hole through which the contact terminal is inserted and in which a step that abuts against the flange is axially formed; and a movable pedestal provided so as to move closer to and away from the housing and having a receiving hole through which a distal end side of the device side terminal projecting from the barrel is inserted and which receives an electrode of the device. A guide part whose inner diameter is substantially the same as the outer diameter of a projecting portion of the device side terminal is formed in the receiving hole.

Abstract: Provided is a Kelvin contact for inspection in which contacts and an insulating layer are less likely to be shifted relative to each other even after repeatedly performed Kelvin inspection. The Kelvin contact for inspection includes: a first contact having an upper contact point that comes into contact with one electrode terminal of an IC device and a lower contact point that comes into contact with an electrode pad of a substrate for inspection; and a second contact having an upper contact point that comes into contact with the one electrode terminal and the lower contact point that comes into contact with an electrode pad of the substrate for inspection. The first and second contacts are adjacently arranged to contact with the same one electrode terminal and provided with an insulating layer surrounding the entire main body area except upper and lower contact point areas including the upper and lower contact points, respectively.

Abstract: A semiconductor device includes a semiconductor element having a substrate, a drift layer, a base region, a source region, trench gate structures, an interlayer insulating film, a source electrode, and a drain electrode. The substrate is made of silicon carbide. The drift layer is disposed on the substrate and has an impurity concentration lower than the substrate. The base region is made of silicon carbide and disposed on the drift layer. The source region is made of silicon carbide having an impurity concentration higher than the drift layer. Each trench gate structure has a gate trench, a gate insulating film, and a gate electrode. The interlayer insulating film covers the gate electrode and the gate insulating film. The source electrode is in ohmic-contact with the source region. The drain electrode is disposed on a rear surface of the substrate.

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.

Abstract: When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.

Abstract: The contact probe comprises a barrel 50, an inspection device side terminal 60, a test board side terminal 70, and a spring 80 disposed in a state of being in contact with the test board side terminal 70 and the inspection device side terminal 60, the test board side terminal 70 includes a stop portion 74 that can abut on the caulked portion 52 in the barrel 50 and a terminal body that projects from the other end 56 of the barrel 50, and the terminal body includes, in order from a tip end, a first shaft section 71, a second shaft section 72 having a diameter larger than a diameter of the first shaft section 71, and a third shaft section 73 having a diameter smaller than the diameter of the second shaft section 72 and having at least a part that can be housed in the barrel 50.

Abstract: The cylindrical member includes a cylindrical base material 40 made of beryllium copper, a first coating layer that is formed on the base material 40 and made of a Ni-based material and serves as a reinforcing material for the base material 40, and a second coating layer 42 that is formed on the first coating layers and made of a metal-based material different from the base material 40, wherein the first coating layer 41 has higher hardness than the base material 40, when the thickness of the base material 40 is represented by TB and the layer thickness of the first coating layer 41 formed on the outer surface is represented by T1OUT, the base material 40 is formed so as to satisfy 13 ?m?TB?25 ?m, and the first coating layer 41 is formed so as to satisfy T1OUT ?TB×4%.

Abstract: When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.

Abstract: Disclosed is a mask defect repair apparatus that is capable of performing defect repair with high accuracy without exposure of a mask to air while being moved between the mask defect repair apparatus and an inspection device. The mask defect repair apparatus emits charged particle beams with an amount of irradiation therewith which is corrected by a correction unit while supplying gas to a defect of the mask, thereby forming a deposition film.

Abstract: When a film thickness of a second epitaxial film is measured, an infrared light is irradiated from a surface side of the second epitaxial film onto a base layer on which a first epitaxial film and the second epitaxial film are formed. A reflected light from an interface between the first epitaxial film and the base layer and a reflected light from a surface of the second epitaxial film are measured to obtain a two-layer film thickness, which is a total film thickness of the first epitaxial film and the second epitaxial film. The film thickness of the second epitaxial film is calculated by subtracting a one-layer film thickness, which is a film thickness of the first epitaxial film, from the two-layer film thickness.

Abstract: A top end of the p type connection layer is connected to the p type extension region. By forming such a p type extension region, it becomes possible to eliminate a region where an interval becomes large between the p type connection layer and the p type guard ring. Therefore, in the mesa portion, it is possible to prevent the equipotential line from excessively rising up, and it is possible to secure the withstand voltage.

Abstract: In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of silicon carbide and on which a base layer is formed is prepared, a trench is provided in the base layer, a silicon carbide layer is epitaxially formed on a surface of the base layer while filling the trench with the silicon carbide layer, the sacrificial layer is planarized by reflow after forming the sacrificial layer, and the silicon carbide layer is etched back together with the planarized sacrificial layer by dry etching under an etching condition in which an etching selectivity of the silicon carbide layer to the sacrificial layer is 1.

Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

Abstract: All of intervals between adjacent p type guard rings are set to be equal to or less than an interval between p type deep layers. As a result, the interval between the p type guard rings becomes large, i.e., the trenches are formed sparsely, so that the p type layer is prevented from being formed thick at the guard ring portion when the p type layer is epitaxially grown. Therefore, by removing the p type layer in the cell portion at the time of the etch back process, it is possible to remove the p type layer without leaving any residue in the guard ring portion. Therefore, when forming the p type deep layer, the p type guard ring and the p type connection layer by etching back the p type layer, the residue of the p type layer is restricted from remaining in the guard ring portion.

Abstract: Intervals of the frame portion and the p type guard ring on a cell portion side are made narrower than other parts, and the narrowed part provides a dot line portion. By narrowing the intervals of the frame portion and the p type guard ring on the cell portion side, the electric field concentration is reduced on the cell portion side, and the equipotential line directs to more outer circumferential side. By providing the dot line portions, the difference in the formation areas of the trench per unit area in the cell portion, the connection portion and the guard ring portion is reduced, and the thicknesses of the p type layers formed on the cell portion, the connection portion and the guard ring portion are uniformed. Thereby, when etching-back the p type layer, the p type layer is prevented from remaining as a residue in the guard ring portion.

Abstract: The width of the p type guard ring is set to match the interval between the adjacent p type guard rings, and the width of the p type guard ring is made larger as the interval between the p type guard rings becomes larger. The width of the frame portion is basically equal to the width of the p type deep layer so that the interval between the frame portions is equal to the interval between the p type deep layers. This makes it possible to reduce the difference in formation areas of the trenches per unit area in the cell portion, the connection portion and the guard ring portion. Therefore, when the p type layer is formed, the difference in the amount of the p type layer embedding into the trenches per unit area also decreases and the thickness of the p type layer is equalized.

Abstract: A silicon carbide semiconductor device includes: a vertical semiconductor element, which includes: a semiconductor substrate made of silicon carbide and having a high impurity concentration layer on a back side and a drift layer on a front side; a base region made of silicon carbide on the drift layer; a source region arranged on the base region and made of silicon carbide; a deep layer disposed deeper than the base region; a trench gate structure including a gate insulation film arranged on an inner wall of a gate trench which is arranged deeper than the base region and shallower than the deep layer, and a gate electrode disposed on the gate insulation film; a source electrode electrically connected to the base region, the source region, and the deep layer; and a drain electrode electrically connected to the high impurity concentration layer.