Abstract: A magnetically actuated MEMS switch 100 includes a first magnetic core portion 120, a first signal line 15, a first contact point 16, a second magnetic core portion 220, a second signal line 25, a second contact point 26, and a first coil portion 111 and a second coil portion 211 serving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portion 120 and the second magnetic core portion 220. The first contact point 16 is displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact point 16 and the second contact point 26 are switched in response to displacement of the first contact point 16.

Abstract: A magnetically actuated MEMS switch 100 includes a first magnetic core portion 120, a first signal line 15, a first contact point 16, a second magnetic core portion 220, a second signal line 25, a second contact point 26, and a first coil portion 111 and a second coil portion 211 serving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portion 120 and the second magnetic core portion 220. The first contact point 16 is displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact point 16 and the second contact point 26 are switched in response to displacement of the first contact point 16.

Abstract: A magnetically actuated MEMS switch 100 includes a first magnetic core portion 120, a first signal line 15, a first contact point 16, a second magnetic core portion 220, a second signal line 25, a second contact point 26, and a first coil portion 111 and a second coil portion 211 serving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portion 120 and the second magnetic core portion 220. The first contact point 16 is displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact point 16 and the second contact point 26 are switched in response to displacement of the first contact point 16.

Abstract: A MEMS switch includes a first signal line provided in a first beam, a first GND adjacent to the first signal line, a second signal line provided in a second beam, and a second GND adjacent to the second signal line. A contact terminal is fixed to any one of the first signal line and the second signal line and performs connection between the first signal line and the second signal line according to deformation of the first beam.

Abstract: A magnetically actuated MEMS switch 100 includes a first magnetic core portion 120, a first signal line 15, a first contact point 16, a second magnetic core portion 220, a second signal line 25, a second contact point 26, and a first coil portion 111 and a second coil portion 211 serving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portion 120 and the second magnetic core portion 220. The first contact point 16 is displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact point 16 and the second contact point 26 are switched in response to displacement of the first contact point 16.

Abstract: A MEMS switch includes a first signal line provided in a first beam, a first GND adjacent to the first signal line, a second signal line provided in a second beam, and a second GND adjacent to the second signal line. A contact terminal is fixed to any one of the first signal line and the second signal line and performs connection between the first signal line and the second signal line according to deformation of the first beam.

Abstract: In a coil component, an inorganic layer which is provided on a lower surface side of a coil has a thermal conductivity higher than that of a resin layer with which an upper surface of the coil is covered and gaps between windings are filled. As a result, heat transfer from the inside of the coil to the outside is supplemented via the inorganic layer. That is, heat transfer of the coil via the inorganic layer is facilitated, and heat dissipation of the coil component improves.

Abstract: A high-frequency transmission line in which the alternating-current resistance is low is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a peripheral part 8 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.

Abstract: A high-frequency transmission line in which the alternating-current resistance is low and that is hard to disconnect is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a central part 6 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.

Abstract: A lower electrode (4) can have an uneven surface structure. An upper electrode (6) can also have the uneven surface structure. A projecting portion of the upper electrode (6) projecting to the lower electrode side is positioned in a gap between projecting portions of the lower electrode (4) and the lower electrode (4) includes Cu as a main component. Young's moduli of a substrate (1), a stress adjustment layer (2), and the lower electrode (4) have a specific relation. Also, corner portions of radii (R1) of curvature positioned inside a projecting portion (4b) have a specific relation.

Abstract: A high-frequency transmission line in which the alternating-current resistance is low and that is hard to disconnect is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a central part 6 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.

Abstract: A high-frequency transmission line in which the alternating-current resistance is low is provided. A high-frequency transmission line 2 is a high-frequency transmission line 2 to transmit an alternating-current electric signal, and contains metal and carbon nanotube, and the carbon nanotube is unevenly distributed at a peripheral part 8 of a cross-section that is of the high-frequency transmission line 2 and that is perpendicular to a transmission direction of the alternating-current electric signal.

Abstract: A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6×1010 ?·cm and not more than 1.5×1014 ?·cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5×1014 ?·cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6×1010 ?·cm, the IDT electrodes are significantly prevented from short-circuiting with each other.

Abstract: A SAW device comprises a single crystal piezo-electric strate (made, for example, of LiTaO3 or LiNbO3), and an interdigital transducer (IDT) formed of a material mainly containing Al and disposed on the piezo-electric substrate. The piezo-electric strate contains an additive (for example, Fe, Mn, Cu, Ti), and an orientation rotated by an angle in a range of 42° to 48° (more preferably 46°±0.3°) from a Y-axis toward a Z-axis about an X-axis. The IDT presents a normalized thickness h/? (h: thickness of electrode, and ?: spacing between digits of the IDT) of 7% to 11%. A more appropriate substrate cut angle can be shown for the SAW device which employs a piezo-electric substrate containing an additive, to improve the electric characteristics thereof.

Abstract: A SAW device comprises a single crystal piezo-electric strate (made, for example, of LiTaO3 or LiNbO3), and an interdigital transducer (IDT) formed of a material mainly containing Al and disposed on the piezo-electric substrate. The piezo-electric strate contains an additive (for example, Fe, Mn, Cu, Ti), and an orientation rotated by an angle in a range of 42° to 48°re preferably 46°±0.3°) from a Y-axis toward a Z-axis about an axis. The IDT presents a normalized thickness h/? (h: thickness electrode, and ?: spacing between digits of the IDT) of 7% to 11%. A more appropriate substrate cut angle can be shown for the device which employs a piezo-electric substrate containing an additive, to improve the electric characteristics thereof.

Abstract: A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6×1010 ?·cm and not more than 1.5×1014 ?·cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5×1014 ?·cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6×1010 ?·cm, the IDT electrodes are significantly prevented from short-circuiting with each other.