Abstract: An object of the present invention is to provide a high-pressure fuel supply pump that can restrict lowering of pressure and generation of cavitation in the vicinity of a seat by providing a throttle in a relief spring holder. Accordingly, in order to achieve the above object, the present invention relates to a fuel supply pump that includes a pressurizing chamber configured to pressurize fuel, and a relief valve mechanism configured to return fuel in a discharge path on a downstream side of the discharge valve to the pressurizing chamber. The relief valve mechanism includes a relief seat configured to close a relief channel when a relief valve is seated, a relief spring configured to energize the relief valve to the relief seat, and a relief spring holder configured to hold the relief spring. In the relief spring holder, a throttle section is formed in a fuel path for returning from a relief chamber in which the relief spring is disposed to the pressurizing chamber and the channel.

Abstract: An object is to suppress cavitation generated at a distal end portion of a seat face when a valve body and a seat portion collide with each other. In a relief valve of a fuel pump, an intersection between the seat face and a flow channel hole is formed at a position more distant than the seat portion formed of the valve body in a valve closing state and the seat face in order to suppress generation of cavitation bubbles when the valve body improves and releases high-pressure fuel.

Abstract: Provided is a valve structure capable of suppressing the vibration of a valve body. The valve structure includes a valve body and a valve seat. The valve seat has a flow path of a fluid. The flow path opens and closes. A groove surrounding a central axis of the flow path is formed in a flow path wall surface downstream of a contact section between the valve body and the valve seat.

Abstract: An object is to suppress cavitation generated at a distal end portion of a seat face when a valve body and a seat portion collide with each other. In a relief valve of a fuel pump, an intersection between the seat face and a flow channel hole is formed at a position more distant than the seat portion formed of the valve body in a valve closing state and the seat face in order to suppress generation of cavitation bubbles when the valve body improves and releases high-pressure fuel.

Abstract: Provided is a solution to a problem on a discharge valve mechanism disposed at an exit of a pressurizing chamber of a high-pressure fuel supply pump, that is, an occurrence of a backward flow of the fuel concentrates on a limited fuel passage, leading to a higher fuel flow rate, and this easily induces the occurrence of cavitation, and collapse of the generated cavitation might damage a seat surface, making it difficult to maintain valve functions. The present invention provides a valve mechanism including a seat member having a seat section, a valve body configured to attach to or detached from the seat section, and a housing member arranged on an outer peripheral side of the seat member. A first fluid flow-path is formed to connect an inner peripheral side and an outer peripheral side of the seat section in a case where the valve is detached from the seat section.

Abstract: A pharmaceutical composition includes a block copolymer having a hydrophilic segment, a hydrophobic segment, and a boronic acid compound bound to a side chain of the hydrophobic segment via a linker moiety that includes a heterocyclic structure. The heterocyclic structure contains a cyclic skeleton that includes a boron atom of the boronic acid compound, one or two atom(s) X bound to the boron atom and selected from an oxygen atom and a nitrogen atom, and one or two carbon atom(s) (respectively) bound to the atom(s) X. The block copolymer further includes at least one organic group bound to the carbon atom(s). The organic group(s) contain(s) an aromatic group or cyclic alkyl group that sterically protects a boronic acid ester bond and/or a boron amide bond resulting from bonding between the boron atom and the atom(s) X.

Abstract: A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.

Abstract: A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.

Abstract: A driving circuit according to the present invention for driving a display apparatus based on display data and a control signal includes: a delay circuit for delaying the input control signal; and a data load section for loading the input display data to the display apparatus at a timing generated by the delayed control signal, where the delay circuit delays the control signal in such a manner that load timing at which the display data is loaded to the display apparatus varies according to fixed timing determined by a constant cycle.

Abstract: The invention provides an axial flow machine that effectively reduces the unstable hydrodynamic force induced by leakage flow and thereby prevents unstable vibrations. A steam turbine comprises: a ring-shaped cover 6 connected to the outer circumferential side of a rotor blade row 4; and a ring-shaped concave section 12 provided on an inner circumferential surface 8 of a casing 1 for housing the cover 6. A narrow passage 15 is formed between an outer circumferential surface 13 of the cover 6 and a bottom surface 14 of the concave section 12. A narrow inflow passage 18 is formed between an upstream lateral surface 16 of the cover 6 and an upstream lateral surface 17 of the concave section 12. A narrow outflow passage 21 is formed between a downstream lateral surface 19 of the cover 6 and a downstream lateral surface 20 of the concave section 12. Between the narrow inflow passage 18 and the narrow passage 15 lies an expanded inflow passage 22.

Abstract: In a patterning method according to the present embodiment, a guide pattern is formed on a processing target film. The guide pattern is configured by concave portions and convex portions extending in a predetermined direction. A block copolymer layer is formed on the guide pattern. The block copolymer layer contains at least two block chains. A layer of microphase-separated structures is formed on the concave portions and the convex portions, respectively, by microphase-separating the block copolymer layer. The processing target film is formed into predetermined patterns by selectively removing the processing target film. At least a part of the block copolymer layer is used as a mask.

Abstract: In a patterning method according to the present embodiment, a guide pattern is formed on a processing target film. The guide pattern is configured by concave portions and convex portions extending in a predetermined direction. A block copolymer layer is formed on the guide pattern. The block copolymer layer contains at least two block chains. A layer of microphase-separated structures is formed on the concave portions and the convex portions, respectively, by microphase-separating the block copolymer layer. The processing target film is formed into predetermined patterns by selectively removing the processing target film. At least a part of the block copolymer layer is used as a mask.

Abstract: According to one embodiment, a pattern forming method is disclosed. A resist pattern having a top surface is formed pattern on a substrate. A coating film having a first thickness distribution is formed on the substrate. The coating film covers the resist pattern. The coating film is thinned to expose the top surface of the resist pattern. The first thickness distribution is changed into a second thickness distribution which is more uniform than the first thickness distribution. The resist pattern is removed without removing the coating film. A pattern is formed in the substrate by processing the substrate by using the coating film as a mask.

Abstract: According to one embodiment, a pattern formation method includes coating a polymer material on a film to be processed, the polymer material having a first segment and a second segment, the second segment containing a functional group that causes a cross-linking reaction, performing microphase separation of the polymer material to form a self-assembly pattern having a first polymer portion that contains the first segment and a second polymer portion that contains the second segment, performing irradiation with energy rays toward the self-assembly pattern in a cooling state; and selectively removing the first polymer portion.

Abstract: According to one embodiment, a pattern forming method includes forming a physical guide including a first predetermined pattern in a first region on a to-be-processed film, and a second predetermined pattern in a second region on the to-be-processed film, forming a block copolymer in the physical guide, forming a self-assembled phase including a first polymer portion and a second polymer portion by causing microphase separation of the block copolymer, removing the second polymer portion, and processing the to-be-processed film, with the physical guide and the first polymer portion serving as a mask. A pattern height of the first predetermined pattern is greater than a pattern height of the second predetermined pattern.

Abstract: A pharmaceutical composition includes a block copolymer having a hydrophilic segment, a hydrophobic segment, and a boronic acid compound bound to a side chain of the hydrophobic segment via a linker moiety that includes a heterocyclic structure. The heterocyclic structure contains a cyclic skeleton that includes a boron atom of the boronic acid compound, one or two atom(s) X bound to the boron atom and selected from an oxygen atom and a nitrogen atom, and one or two carbon atom(s) (respectively) bound to the atom(s) X. The block copolymer further includes at least one organic group bound to the carbon atom(s). The organic group(s) contain(s) an aromatic group or cyclic alkyl group that sterically protects a boronic acid ester bond and/or a boron amide bond resulting from bonding between the boron atom and the atom(s) X.

Abstract: According to one embodiment, a pattern forming method is disclosed. A resist pattern having a top surface is formed pattern on a substrate. A coating film having a first thickness distribution is formed on the substrate. The coating film covers the resist pattern. The coating film is thinned to expose the top surface of the resist pattern. The first thickness distribution is changed into a second thickness distribution which is more uniform than the first thickness distribution. The resist pattern is removed without removing the coating film. A pattern is formed in the substrate by processing the substrate by using the coating film as a mask.

Abstract: In accordance with an embodiment, a pattern formation method includes: forming, on a first substrate, a fabrication target film having first and second regions; selectively applying, onto the first region a self-assembly material of a plurality of components that are phase-separable by a thermal treatment; baking the self-assembly material to phase-separate the self-assembly material into the components; removing any one of the components to form a first pattern; applying a curable resin onto the second region of the fabrication target film; bringing a dented second substrate corresponding to an arbitrary pattern closer to and into contact with the curable resin so that the second substrate faces the curable resin; curing the curable resin; detaching the second substrate from the curable resin to form a second pattern in the curable resin; and using the first and the second patterns as masks to fabricate the fabrication target film.

Abstract: A pattern forming method includes the steps of: forming a pattern transfer layer on a process target film; bringing a mold into contact with the pattern transfer layer, the mold having a predetermined relief pattern on a surface thereof and including a porous layer formed on the surface and impregnated with a release agent; curing the pattern transfer layer in a state where the mold is in contact with the patter transfer layer; and releasing the mold from the pattern transfer layer. A low dielectric constant insulating film or amorphous carbon, for example, is used as the porous layer.

Abstract: A method for manufacturing a semiconductor device including: forming a resist film 11 on a film to be processed 32; baking the resist film 11; performing immersion exposure on the resist film 11 after the baking; performing post exposure bake on the resist film 11 after performing the immersion exposure; developing the resist film 11 after performing the post exposure bake; and after the post exposure bake is performed on the resist film 11, removing an edge 15 of the resist film 11, the edge not being exposed.