Abstract: Provided are a semiconductor device having a MOS transistor of a structure capable of obtaining a good characteristic particularly about assurance of resistance to punch-through and leak current reduction, as well as a method of manufacturing the same. That is, in addition to the usual MOS transistor structure, a channel dope region (1) is disposed at a predetermined depth so as to extend substantially the entire surface of a flat surface in a P well region (22) including a channel region. In the channel dope region (1), it is set so that the maximum value of the P type impurity concentration (MAX of P) ranges from 1×1018 to 1×1019, and the maximum value of the N type impurity concentration (MAX of N) of a source/drain region (31 (32)) is not less than 10% and not more than 100%. Note that the surface proximate region of the P well region (22) is to be beyond the object.

Abstract: A method of manufacturing a semiconductor device is provided which, even if device dimensions decrease, prevents degradation in the operating characteristics of semiconductor elements which are isolated from each other by an element isolation region in a trench isolation structure. Implantation of ions (15) in a polycrystalline silicon layer (3) from above through a silicon nitride film (2) produces an ion-implanted polycrystalline silicon layer (16). Since the ions (15) are an ionic species of element which acts to enhance oxidation, the implantation of the ions (15) changes the polycrystalline silicon layer (3) into the ion-implanted polycrystalline silicon layer (16) having a higher oxidation rate. In subsequent formation of a thermal oxide film (21) on the inner wall of a trench (5), exposed part of the ion-implanted polycrystalline silicon layer (16) is also oxidized, forming relatively wide polycrystalline silicon oxide areas (21a).

Abstract: A method of manufacturing a semiconductor device is provided which, even if device dimensions decrease, prevents degradation in the operating characteristics of semiconductor elements which are isolated from each other by an element isolation region in a trench isolation structure. Implantation of ions (15) in a polycrystalline silicon layer (3) from above through a silicon nitride film (2) produces an ion-implanted polycrystalline silicon layer (16). Since the ions (15) are an ionic species of element which acts to enhance oxidation, the implantation of the ions (15) changes the polycrystalline silicon layer (3) into the ion-implanted polycrystalline silicon layer (16) having a higher oxidation rate. In subsequent formation of a thermal oxide film (21) on the inner wall of a trench (5), exposed part of the ion-implanted polycrystalline silicon layer (16) is also oxidized, forming relatively wide polycrystalline silicon oxide areas (21a).

Abstract: There is provided a method of forming an element isolation structure that can maintain its element isolation capability even with the progress of miniaturization of semiconductor elements. Through thermal processing in a nitrogen atmosphere at 900° C., a non single-crystal silicon film (80) is crystallized into single-crystal form by epitaxial growth on the main surface of a substrate, thereby to form an epitaxial silicon film (85). The epitaxial silicon film (85) is then planarized by CMP to expose the upper surface of an element isolation insulating film (50). This completes the element isolation insulating film (50) having a two-level protruding shape.

Abstract: Provided are a semiconductor device that can obtain more output current without increasing the occupied area of a MOS transistor, and a method for manufacturing the same. MOS transistors (M11, M12) are electrically isolated by a trench isolation oxide film (21). The MOS transistor (M11) has a groove portion (GP) in which the width of the top is 20 nm to 80 nm and the depth is 50 nm to 150 nm. The groove portion (GP) is disposed at the boundary part between a trench isolation insulating film (22) and an active region (AR1) so as to surround the active region (AR1). A gate electrode (31A) is not only disposed above the active region (AR1) but also buried in the groove (GP) with a gate oxide film (30) interposed therebetween.

Abstract: A semiconductor device includes a silicon substrate (1), a pair of isolating insulation films (9), a channel region (2), a pair of source/drain regions (3), a pair of silicon oxide films (4) formed on an upper surface of the silicon substrate (1) so as to overlie the source/drain regions (3), and a gate structure (8) formed in a first recess defined by the upper surface of the silicon substrate (1) over the channel region (2) and side surfaces of the pair of silicon oxide films (4). The gate structure (8) includes a gate oxide film (5) formed on the upper surface of the silicon substrate (1), a pair of silicon oxide films (6) formed on lower part of the side surfaces of the pair of silicon oxide films (4), and a metal film (7) filling a second recess surrounded by upper part of the side surfaces of the silicon oxide films (4), the silicon oxide films (6) and the gate oxide film (5).

Abstract: There is provided a method for forming a trench type element isolation structure wherein no recess develops in the edge part of an imbedded oxide film of a trench type element isolation. Thermal oxidation films having higher etching resistance than the CVD film are formed not only on the surroundings of the imbedded oxide film inside the groove formed on the silicon substrate but also on the lateral sides of the imbedded oxide film projecting upward from the silicon substrate surface.

Abstract: A trench is formed in a substrate and a silicon oxide film which serves as a trench isolation is buried in the trench. The silicon oxide film has no shape sagging from a main surface of the substrate. A channel impurity layer to control a threshold voltage of a MOSFET is formed in the main surface of the substrate. The channel impurity layer is made of P-type layer, having an impurity concentration higher than that of the substrate. A first portion of the channel impurity layer is formed near an opening edge of the trench along a side surface of the trench in the source/drain layer, and more specifically, in the N+-type layer. A second portion of the channel impurity layer is formed deeper than the first portion. A gate insulating film and a gate electrode are formed on the main surface of the substrate.

Abstract: Provided are a semiconductor device having a MOS transistor of a structure capable of obtaining a good characteristic particularly about assurance of resistance to punch-through and leak current reduction, as well as a method of manufacturing the same. That is, in addition to the usual MOS transistor structure, a channel dope region (1) is disposed at a predetermined depth so as to extend substantially the entire surface of a flat surface in a P well region (22) including a channel region. In the channel dope region (1), it is set so that the maximum value of the P type impurity concentration (MAX of P) ranges from 1×1018 to 1×1019, and the maximum value of the N type impurity concentration (MAX of N) of a source/drain region (31 (32)) is not less than 10% and not more than 100%. Note that the surface proximate region of the P well region (22) is to be beyond the object.

Abstract: A trench is formed in a silicon substrate (1) and an oxide film (11) is provided on an inner wall of the trench. The trench is filled with an oxide film (7) through the oxide film (11). A gate oxide film (14) is formed on the silicon substrate (1). A bottom of a recess F2, defined by the gate oxide film (14) and the oxide films (11, 17), is arranged in a position more approximated to the oxide film (7) for filling the trench than a boundary between the silicon substrate (1) and the oxide film (11). A concentration of a field from a gate electrode (16) is suppressed in the vicinity of the element isolation.

Abstract: P wells (11, 12) having different impurity profiles are adjacently formed in a surface (50S) of a semiconductor substrate (50). A P-type layer (20) having lower resistivity than the P wells (11, 12) is formed in the surface (50S) across the P wells (11, 12), so that the P wells (11, 12) are electrically connected with each other through the P-type layer (20). Contacts (31, 32) fill in contact holes (70H1, 70H2) formed in an interlayer isolation film (70) respectively in contact with the P-type layer (20). The contacts (31, 32) are connected to a wire (40). The wire (70) is connected to a prescribed potential, thereby fixing the P wells (11, 12) to prescribed potentials through the contacts (31, 32) and the P-type layer (20). Thus, the potentials of the wells can be stably fixed and the layout area of elements for fixing the aforementioned potentials can be reduced.

Abstract: An object is to obtain a semiconductor device in which channel length is reduced without increasing the gate resistance to realize higher operation speed and its manufacturing method.

Abstract: Provided are a semiconductor device that can obtain more output current without increasing the occupied area of a MOS transistor, and a method for manufacturing the same. MOS transistors (M11, M12) are electrically isolated by a trench isolation oxide film (21). The MOS transistor (M11) has a groove portion (GP) in which the width of the top is 20 nm to 80 nm and the depth is 50 nm to 150 nm. The groove portion (GP) is disposed at the boundary part between a trench isolation insulating film (22) and an active region (AR1) so as to surround the active region (AR1). A gate electrode (31A) is not only disposed above the active region (AR1) but also buried in the groove (GP) with a gate oxide film (30) interposed therebetween.

Abstract: A method of manufacturing a semiconductor device having a microminiture trench isolation in which an insulating film is embedded by an HDP-CVD method comprising: a step of pre-planarization by conducting a dry etching selectively with respect to the insulating film laminated excessively on the surface of substrate, which is to be an active region, and a step of polishing by a CMP method in order to improve a surface planarity of the insulating film, wherein an etching mask used at the time of opening a trench opening portion has a multi-layer structure including a silicon nitride film and a polycrystal silicon film; the polycrystal silicon film is used as an etching stopper at the time of pre-planarization; and the silicon nitride film is used as an etching stopper at the time of polishing by a CMP method in order to remove simultaneously the excessive insulating film and the polycrystal silicon film to expose and a surface of the substrate, which is the active region, whereby the trench isolation having a sa

Abstract: There is described a method of manufacturing a semiconductor device, wherein a DRAM memory cell and a logic circuit are fabricated on a single semiconductor substrate, which method enables improvements in the refresh characteristics of the DRAM memory cell by preventing a leakage current from developing and enables improvements in the reliability of the semiconductor device, reduces power consumption, and enables improvements in the performance and processing speed of integrated circuits by assembly of the integrated circuits into a single chip. After formation of a polysilicon layer which is to act as gate electrodes, silicon nitride films are formed so as to cover source/drain regions of the DRAM memory cell and to cause other source/drain regions and the polysilicon layer to be exposed. A metal silicide layer is formed on the semiconductor substrate by means of self-aligned silicide technique.

Abstract: A semiconductor device comprising a semiconductor substrate, a trench formed in the substrate and having an inner wall including a sidewall and a bottom surface, a silicon oxide film deposited on the inner wall, and a buried oxide film deposited on the silicon oxide film to bury the trench, wherein the sidewall has portions of a sidewall sloped at a first profile angle A1, a second profile angle A2 and a third profile angle A3 from a surface of the substrate toward the bottom surface of the trench, and the profile angles have a relationship of A1<A2, A3<A2 and A1<83°.

Abstract: A trench (21) is formed in a silicon substrate (1) on which an underlying oxide film (2) and a silicon nitride film (3) are formed. Then, a silicon oxide (11) is deposited by an HDP-CVD method to fill the trench (21) with the oxide. Further, a resist (41) including a second resist portion (42), and a resist (43) are formed. The silicon oxide film (11) that is not covered with the resists (41) and (43), is removed by dry etching. Etch selectivity of the silicon oxide film (11) to the stopper film (3) is not less than a value (2(c−a)/d) obtained by dividing twice a value (c−a) which is obtained by subtracting an alignment margin (a) from the maximum film thickness (c) of the silicon oxide film (11), by the film thickness (d) of the stopper film (3). The resists (41) and (43) are then removed, and the residual silicon oxide film (11B, 11DC, 11DE, 11FE) is polished and removed by the CMP method. This forms a trench type element isolation with no depression at its edge portion.

Abstract: There is provided a trench type element isolation structure wherein no recess develops in the edge part of an imbedded oxide film of a trench type element isolation. Thermal oxidation films having higher etching resistance than a CVD film are formed not only on the surroundings of the imbedded oxide film inside the groove formed on the silicon substrate but also on the lateral sides of the imbedded oxide film projecting upward from the silicon substrate surface.

Abstract: The present invention provides a semiconductor device which includes trench-type element isolation which performs accurate alignment without deteriorating a device capability, and a method of manufacturing such a semiconductor device. Since a dummy gate electrode (14A) is formed in an edge proximity region of a trench (10A), a structure which does not create an etching remainder is realized. In addition, since a height difference is provided in a surface of the dummy gate electrode (14A) in such a manner that the height difference reflects a preliminary height difference between a surface of a silicon oxide films (2A) and a surface of a silicon substrate (1), it is possible to use the dummy gate electrode itself (14A) as an alignment mark.

Abstract: An object is to obtain a method of manufacturing semiconductor devices having trench isolation structure which accomplishes simplification of manufacturing process without deterioration of polishing uniformity. After a silicon oxide film (5) is deposited an HDP-CVD method, a polysilicon film (6) is deposited to such a thickness that the polysilicon film (6) on upper regions of raised areas is removed and the polysilicon film (6) in recessed areas remains in a first CMP process and that the polysilicon film (6) serves as a mask in a later etching process. Subsequently, the first CMP process is performed and the etching process to the silicon oxide film (5) is performed by using the polysilicon film (6) after the first CMP process as a mask to remove the silicon oxide film (5) in the upper regions of the raised areas, and a second CMP process is further performed to planarize the semiconductor substrate (1).