Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

Abstract: A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.

Abstract: A method includes the steps of forming an insulating layer on a first conductive layer, forming a connection hole in the insulating layer, performing etching using an ion having a very low etching rate with respect to the first conductive layer and a high etching rate with respect to the insulating layer, thereby forming a taper on a side wall of the connection hole, and forming a second conductive layer on the first layer and the insulating layer. A typical example of an etching ion is an oxygen ion.

Abstract: An apparatus for forming a thin film to planarize a surface of a semiconductor device having convex and concave regions, comprising a plasma generating chamber into which are an Ar gas and an O.sub.2 gas are supplied so that a plasma is produced; a specimen chamber in which a substrate electrode upon which a specimen substrate is placed and which is in partial communication with the plasma generating chamber and into which an SiH.sub.4 gas as a film material is introduced; and a bias power source for applying a bias voltage to the substrate electrode so that ions sufficiently impinge substantially vertically upon the electrode to perform ion etching. First, an SiO.sub.2 film is deposited on the specimen substrate by using the O.sub.2 and SiH.sub.4 gases. In the next step, Ar plasma and O.sub.2 plasma are produced in the plasma generating chamber and a bias voltage is applied to the substrate electrode.