Patents by Inventor Katsuyuki Nakada
Katsuyuki Nakada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12217775Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5??<1.9).Type: GrantFiled: August 31, 2023Date of Patent: February 4, 2025Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada, Tetsuya Uemura
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Publication number: 20240355521Abstract: A spin inductor has a first inductor layer, a first terminal, and a second terminal. The first inductor layer includes a first wiring layer and a first ferromagnetic layer in contact with the first wiring layer. The first terminal is in contact with a first lateral surface of the first inductor layer. The second terminal is in contact with a second lateral surface that is different from the first lateral surface of the first inductor layer. A virtual plane that connects a top edge and a bottom edge of the first lateral surface is inclined in the laminating direction.Type: ApplicationFiled: September 30, 2022Publication date: October 24, 2024Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Katsuyuki NAKADA, Kaito ASAI
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Publication number: 20240347252Abstract: A spin inductor includes a laminated body having a first inductor layer, a spacer layer, and a second inductor layer. The first inductor layer includes a first wiring layer, and a first ferromagnetic layer in contact with the first wiring layer. The second inductor layer includes a second wiring layer, and a second ferromagnetic layer in contact with the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.Type: ApplicationFiled: June 9, 2022Publication date: October 17, 2024Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Tatsuo SHIBATA, Katsuyuki NAKADA
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Publication number: 20240334839Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer, a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co Heusler alloy, and at least a part of the second layer is crystallized and the second layer contains a ferromagnetic element and elemental boron.Type: ApplicationFiled: June 12, 2024Publication date: October 3, 2024Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Publication number: 20240290822Abstract: A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.Type: ApplicationFiled: October 11, 2022Publication date: August 29, 2024Applicant: TDK CORPORATIONInventors: Tomoyuki SASAKI, Tatsuo SHIBATA, Katsuyuki NAKADA
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Patent number: 12063873Abstract: A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.Type: GrantFiled: January 13, 2023Date of Patent: August 13, 2024Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Katsuyuki Nakada
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Patent number: 12035635Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.Type: GrantFiled: February 28, 2023Date of Patent: July 9, 2024Assignee: TDK CORPORATIONInventors: Shinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
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Patent number: 11967348Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy obtained by adding an additive element to a Heusler alloy. The additive element is any one or more elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.Type: GrantFiled: December 21, 2020Date of Patent: April 23, 2024Assignee: TDK CORPORATIONInventors: Katsuyuki Nakada, Kazuumi Inubushi, Shinto Ichikawa
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Publication number: 20240112695Abstract: A magnetoresistance effect element having a large MR ratio is provided. This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.Type: ApplicationFiled: September 27, 2023Publication date: April 4, 2024Applicant: TDK CORPORATIONInventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
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Patent number: 11944018Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1), Ru?X1-???(1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol ? represents a number satisfying 0.5<?<1, the first ferromagnetic layer contains a Heusler alloy, and the second ferromagnetic layer contains a Heusler alloy.Type: GrantFiled: July 6, 2022Date of Patent: March 26, 2024Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada, Shinto Ichikawa
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Publication number: 20240099152Abstract: A magneto resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and a buffer layer. The nonmagnetic layer is between the first ferromagnetic layer and second ferromagnetic layer. The buffer layer is in contact with the first ferromagnetic layer. The first ferromagnetic layer contains a Heusler alloy containing Co. The buffer layer contains at least a first atom, a second atom, and a third atom other than Co as main components. The buffer layer does not contain Co or contains Co at a proportion less than a compositional proportion of the first atom, the second atom, and the third atom. In a case where an atomic radius of any one atom of the first atom, the second atom, and the third atom is taken as a reference, an atomic radius of another atom thereof is 95% or less or 105% or more of the reference.Type: ApplicationFiled: September 15, 2022Publication date: March 21, 2024Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA
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Publication number: 20240062777Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5??<1.9).Type: ApplicationFiled: August 31, 2023Publication date: February 22, 2024Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Tetsuya UEMURA
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Patent number: 11871681Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0<x?4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.Type: GrantFiled: December 13, 2022Date of Patent: January 9, 2024Assignee: TDK CORPORATIONInventors: Tomoyuki Sasaki, Katsuyuki Nakada, Tatsuo Shibata
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Publication number: 20230416905Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.Type: ApplicationFiled: June 15, 2021Publication date: December 28, 2023Applicant: TDK CORPORATIONInventors: Tsuyoshi SUZUKI, Katsuyuki NAKADA, Tomoyuki SASAKI
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Patent number: 11840757Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.Type: GrantFiled: June 15, 2021Date of Patent: December 12, 2023Assignee: TDK CORPORATIONInventors: Tsuyoshi Suzuki, Katsuyuki Nakada, Tomoyuki Sasaki
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Publication number: 20230392253Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.Type: ApplicationFiled: August 2, 2023Publication date: December 7, 2023Applicant: TDK CORPORATIONInventors: Tsuyoshi SUZUKI, Katsuyuki NAKADA, Tomoyuki SASAKI
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Publication number: 20230337549Abstract: The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.Type: ApplicationFiled: June 23, 2023Publication date: October 19, 2023Applicant: TDK CORPORATIONInventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA
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Publication number: 20230309415Abstract: A magneto resistive element includes a laminate including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer and an insulating layer configured to cover at least a part of a side surface of the laminate and including an insulator. The first ferromagnetic layer has a first non-nitride region and a first nitride region that is closer to the insulating layer than the first non-nitride region and contains nitrogen.Type: ApplicationFiled: March 23, 2022Publication date: September 28, 2023Applicant: TDK CorporationInventors: Katsuyuki NAKADA, Tomoyuki SASAKI
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Patent number: 11769523Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5<?<1.9).Type: GrantFiled: June 29, 2022Date of Patent: September 26, 2023Assignee: TDK CORPORATIONInventors: Kazuumi Inubushi, Katsuyuki Nakada, Tetsuya Uemura
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Publication number: 20230292625Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy obtained by adding an additive element to a Heusler alloy. The additive element is any one or more elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.Type: ApplicationFiled: December 21, 2020Publication date: September 14, 2023Applicant: TDK CORPORATIONInventors: Katsuyuki NAKADA, Kazuumi INUBUSHI, Shinto ICHIKAWA