Patents by Inventor Katsuyuki Nakada

Katsuyuki Nakada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12217775
    Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5??<1.9).
    Type: Grant
    Filed: August 31, 2023
    Date of Patent: February 4, 2025
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada, Tetsuya Uemura
  • Publication number: 20240355521
    Abstract: A spin inductor has a first inductor layer, a first terminal, and a second terminal. The first inductor layer includes a first wiring layer and a first ferromagnetic layer in contact with the first wiring layer. The first terminal is in contact with a first lateral surface of the first inductor layer. The second terminal is in contact with a second lateral surface that is different from the first lateral surface of the first inductor layer. A virtual plane that connects a top edge and a bottom edge of the first lateral surface is inclined in the laminating direction.
    Type: Application
    Filed: September 30, 2022
    Publication date: October 24, 2024
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Katsuyuki NAKADA, Kaito ASAI
  • Publication number: 20240347252
    Abstract: A spin inductor includes a laminated body having a first inductor layer, a spacer layer, and a second inductor layer. The first inductor layer includes a first wiring layer, and a first ferromagnetic layer in contact with the first wiring layer. The second inductor layer includes a second wiring layer, and a second ferromagnetic layer in contact with the second wiring layer. The spacer layer is sandwiched between the first ferromagnetic layer and the second wiring layer.
    Type: Application
    Filed: June 9, 2022
    Publication date: October 17, 2024
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Tatsuo SHIBATA, Katsuyuki NAKADA
  • Publication number: 20240334839
    Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer, a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co Heusler alloy, and at least a part of the second layer is crystallized and the second layer contains a ferromagnetic element and elemental boron.
    Type: Application
    Filed: June 12, 2024
    Publication date: October 3, 2024
    Applicant: TDK CORPORATION
    Inventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Publication number: 20240290822
    Abstract: A variable capacitor includes: a first conductive layer; a second conductive layer; and a capacitance layer sandwiched between the first conductive layer and the second conductive layer. Each of the first conductive layer and the second conductive layer is a ferromagnetic layer containing a ferromagnetic material. The first conductive layer has a first magnetic domain and a second magnetic domain having magnetization oriented in a direction different from the first magnetic domain. In the variable capacitor, a domain wall which is a boundary between the first magnetic domain and the second magnetic domain is configured to be movable within at least an area of the first conductive layer overlapping the capacitance layer in a laminating direction in a first direction within a plane of the first conductive layer.
    Type: Application
    Filed: October 11, 2022
    Publication date: August 29, 2024
    Applicant: TDK CORPORATION
    Inventors: Tomoyuki SASAKI, Tatsuo SHIBATA, Katsuyuki NAKADA
  • Patent number: 12063873
    Abstract: A tunnel barrier layer includes a non-magnetic oxide, wherein a crystal structure of the tunnel barrier layer includes both an ordered spinel structure and a disordered spinel structure.
    Type: Grant
    Filed: January 13, 2023
    Date of Patent: August 13, 2024
    Assignee: TDK CORPORATION
    Inventors: Shinto Ichikawa, Katsuyuki Nakada
  • Patent number: 12035635
    Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
    Type: Grant
    Filed: February 28, 2023
    Date of Patent: July 9, 2024
    Assignee: TDK CORPORATION
    Inventors: Shinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 11967348
    Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy obtained by adding an additive element to a Heusler alloy. The additive element is any one or more elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: April 23, 2024
    Assignee: TDK CORPORATION
    Inventors: Katsuyuki Nakada, Kazuumi Inubushi, Shinto Ichikawa
  • Publication number: 20240112695
    Abstract: A magnetoresistance effect element having a large MR ratio is provided. This magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer. The first ferromagnetic layer includes a first layer and a second layer. The first layer is closer to the nonmagnetic layer than the second layer. The first layer has a Heusler alloy containing at least partially crystallized Co. The second layer contains a material different from the Heusler alloy and has at least a partially crystallized ferromagnetic material. The first layer and the second layer have added first atoms. The first atom is any one selected from the group consisting of Mg, Al, Cr, Mn, Ni, Cu, Zn, Pd, Cd, In, Sn, Sb, Pt, Au, and Bi.
    Type: Application
    Filed: September 27, 2023
    Publication date: April 4, 2024
    Applicant: TDK CORPORATION
    Inventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Patent number: 11944018
    Abstract: A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1), Ru?X1-???(1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol ? represents a number satisfying 0.5<?<1, the first ferromagnetic layer contains a Heusler alloy, and the second ferromagnetic layer contains a Heusler alloy.
    Type: Grant
    Filed: July 6, 2022
    Date of Patent: March 26, 2024
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada, Shinto Ichikawa
  • Publication number: 20240099152
    Abstract: A magneto resistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and a buffer layer. The nonmagnetic layer is between the first ferromagnetic layer and second ferromagnetic layer. The buffer layer is in contact with the first ferromagnetic layer. The first ferromagnetic layer contains a Heusler alloy containing Co. The buffer layer contains at least a first atom, a second atom, and a third atom other than Co as main components. The buffer layer does not contain Co or contains Co at a proportion less than a compositional proportion of the first atom, the second atom, and the third atom. In a case where an atomic radius of any one atom of the first atom, the second atom, and the third atom is taken as a reference, an atomic radius of another atom thereof is 95% or less or 105% or more of the reference.
    Type: Application
    Filed: September 15, 2022
    Publication date: March 21, 2024
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA
  • Publication number: 20240062777
    Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5??<1.9).
    Type: Application
    Filed: August 31, 2023
    Publication date: February 22, 2024
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Tetsuya UEMURA
  • Patent number: 11871681
    Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0<x?4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.
    Type: Grant
    Filed: December 13, 2022
    Date of Patent: January 9, 2024
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Katsuyuki Nakada, Tatsuo Shibata
  • Publication number: 20230416905
    Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
    Type: Application
    Filed: June 15, 2021
    Publication date: December 28, 2023
    Applicant: TDK CORPORATION
    Inventors: Tsuyoshi SUZUKI, Katsuyuki NAKADA, Tomoyuki SASAKI
  • Patent number: 11840757
    Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
    Type: Grant
    Filed: June 15, 2021
    Date of Patent: December 12, 2023
    Assignee: TDK CORPORATION
    Inventors: Tsuyoshi Suzuki, Katsuyuki Nakada, Tomoyuki Sasaki
  • Publication number: 20230392253
    Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
    Type: Application
    Filed: August 2, 2023
    Publication date: December 7, 2023
    Applicant: TDK CORPORATION
    Inventors: Tsuyoshi SUZUKI, Katsuyuki NAKADA, Tomoyuki SASAKI
  • Publication number: 20230337549
    Abstract: The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.
    Type: Application
    Filed: June 23, 2023
    Publication date: October 19, 2023
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA
  • Publication number: 20230309415
    Abstract: A magneto resistive element includes a laminate including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer and an insulating layer configured to cover at least a part of a side surface of the laminate and including an insulator. The first ferromagnetic layer has a first non-nitride region and a first nitride region that is closer to the insulating layer than the first non-nitride region and contains nitrogen.
    Type: Application
    Filed: March 23, 2022
    Publication date: September 28, 2023
    Applicant: TDK Corporation
    Inventors: Katsuyuki NAKADA, Tomoyuki SASAKI
  • Patent number: 11769523
    Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5<?<1.9).
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: September 26, 2023
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada, Tetsuya Uemura
  • Publication number: 20230292625
    Abstract: This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy obtained by adding an additive element to a Heusler alloy. The additive element is any one or more elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.
    Type: Application
    Filed: December 21, 2020
    Publication date: September 14, 2023
    Applicant: TDK CORPORATION
    Inventors: Katsuyuki NAKADA, Kazuumi INUBUSHI, Shinto ICHIKAWA