Patents by Inventor Katuhiko Kanamori

Katuhiko Kanamori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5668033
    Abstract: On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.
    Type: Grant
    Filed: May 17, 1996
    Date of Patent: September 16, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Fumio Ohara, Shinji Yoshihara, Katuhiko Kanamori, Takashi Kurahashi