Patents by Inventor Kazufumi Watanabe

Kazufumi Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11076078
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: July 27, 2021
    Assignee: SONY CORPORATION
    Inventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
  • Publication number: 20210193703
    Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 24, 2021
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Young Woo Jung, Geunsook Park, Lindsay Alexander Grant
  • Publication number: 20210192859
    Abstract: A server (1) executes an acquisition process (S31) of acquiring, from a terminal device (3) of a visitor (A), information to be used for identifying a visit destination of the visitor, and a reception process (S4) to (S7) of notifying a to-be-visited person at the visit destination identified by use of the information acquired, of the visit of the visitor. The reception process includes an identification process (S4) of identifying the visit destination by use of the information acquired, and a display process (S5) of causing the terminal device to display a reception screen, for the visit destination, which receives an operation performed by the visitor.
    Type: Application
    Filed: May 8, 2019
    Publication date: June 24, 2021
    Inventor: Kazufumi WATANABE
  • Publication number: 20210075942
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Application
    Filed: November 3, 2020
    Publication date: March 11, 2021
    Applicant: SONY CORPORATION
    Inventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
  • Patent number: 10855893
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: December 1, 2020
    Assignee: Sony Corporation
    Inventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
  • Patent number: 10848697
    Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: November 24, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Dyson Tai, Lindsay Grant
  • Patent number: 10812746
    Abstract: Provided is a solid-state imaging device including: an effective pixel region of a substrate, effective pixels being arranged in the effective pixel region; an interconnection region around the effective pixel region, electrodes or interconnects being provided in the interconnection region; a peripheral region outside the interconnection region; and a film formed on the substrate. A cross-sectional height of the film in the effective pixel region is smaller than a cross-sectional height of the film in the interconnection region, and a cross-sectional height of the film in the peripheral region and a cross-sectional height of the film in at least a portion of a middle region between the effective pixel region and the interconnection region, the portion being closer to the interconnection region, are between the cross-sectional height of the film in the effective pixel region and the cross-sectional height of the film in the interconnection region.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: October 20, 2020
    Assignee: Sony Corporation
    Inventors: Yoshiaki Masuda, Kazufumi Watanabe, Kyohei Mizuta, Keishi Inoue, Hirohisa Uchida
  • Publication number: 20200296263
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Application
    Filed: May 28, 2020
    Publication date: September 17, 2020
    Applicant: SONY CORPORATION
    Inventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
  • Patent number: 10771664
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: September 8, 2020
    Assignee: Sony Corporation
    Inventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
  • Patent number: 10738166
    Abstract: A polyoxymethylene resin composition from which formaldehyde is generated in a reduced amount upon molding, without carrying out a stabilization treatment for stabilizing an unstable terminal group in a crude oxymethylene copolymer. A hindered phenol-type antioxidant agent and an ethylene-(methacrylic acid) copolymer resin or an ethylene-(acrylic acid) copolymer resin or a salt thereof are melted and kneaded together to produce a polyoxymethylene resin composition without carrying out a stabilization treatment for stabilizing an unstable terminal group in a crude oxymethylene copolymer for which a polymerization catalyst is deactivated after the completion of copolymerization, and in which the unstable terminal group is not yet stabilized. When the polyoxymethylene resin composition is extrusion-molded, the discoloration of a molded product or the deterioration in properties of the molded product can be prevented for a long period of time.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: August 11, 2020
    Assignee: POLYPLASTICS CO., LTD.
    Inventors: Tomohiro Monma, Kazufumi Watanabe, Akihide Shimoda
  • Publication number: 20200154011
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Application
    Filed: January 10, 2020
    Publication date: May 14, 2020
    Applicant: SONY CORPORATION
    Inventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
  • Publication number: 20200091206
    Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
    Type: Application
    Filed: November 19, 2019
    Publication date: March 19, 2020
    Applicant: Sony Corporation
    Inventors: Susumu Hiyama, Kazufumi Watanabe
  • Publication number: 20200059618
    Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.
    Type: Application
    Filed: August 14, 2018
    Publication date: February 20, 2020
    Applicant: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Dyson Tai, Lindsay Grant
  • Patent number: 10529760
    Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: January 7, 2020
    Assignee: Sony Cororation
    Inventors: Susumu Hiyama, Kazufumi Watanabe
  • Patent number: 10412287
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: September 10, 2019
    Assignee: Sony Corporation
    Inventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
  • Patent number: 10326920
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: June 18, 2019
    Assignee: Sony Corporation
    Inventors: Yoshiaki Masuda, Yuki Miyanami, Hideshi Abe, Tomoyuki Hirano, Masanari Yamaguchi, Yoshiki Ebiko, Kazufumi Watanabe, Tomoharu Ogita
  • Publication number: 20190174034
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Application
    Filed: January 18, 2019
    Publication date: June 6, 2019
    Applicant: SONY CORPORATION
    Inventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
  • Publication number: 20190174033
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.
    Type: Application
    Filed: January 18, 2019
    Publication date: June 6, 2019
    Applicant: SONY CORPORATION
    Inventors: Yoshiaki MASUDA, Yuki MIYANAMI, Hideshi ABE, Tomoyuki HIRANO, Masanari YAMAGUCHI, Yoshiki EBIKO, Kazufumi WATANABE, Tomoharu OGITA
  • Publication number: 20190165016
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 30, 2019
    Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
  • Patent number: 10304882
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: May 28, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant