Abstract: Provided are an X-ray imaging panel capable of suppressing a leak current of a photoelectric conversion layer while reducing the number of steps for manufacturing the imaging panel, and a method for manufacturing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays passing through a subject. The imaging panel 1 is provided with a thin film transistor 13, passivation films 103 and 104 covering the thin film transistor 13, a photoelectric conversion layer 15 converting scintillation light into a charge, an upper electrode 16, and a lower electrode 14 connected to the thin film transistor 13, on a substrate 101. End portions of the lower electrode 14 are disposed on an inner side than the end portions of the photoelectric conversion layer 15. The lower electrode 14 and the thin film transistor 13 are connected to each other via a contact hole CH1 formed in the passivation films 103 and 104, in a region in which the photoelectric conversion layer 15 is provided.

Abstract: An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.

Abstract: An imaging device according to an embodiment of the present invention includes a photoelectric conversion part that converts incident light into electric charge, and a detection part that detects the electric charge generated in the photoelectric conversion part. The photoelectric conversion part includes a plurality of photodiodes arranged in a matrix, and the detection part includes a plurality of thin film transistors provided corresponding to the plurality of photodiodes and arranged in a matrix. Each of the photodiodes includes a lower electrode, a semiconductor layer, and an upper electrode, and an insulating layer is provided between at least a portion of the lower electrode in the thickness direction and the semiconductor layer in the peripheral portion of the semiconductor layer. An end of the insulating layer has a tapered shape having an acute angle between the lower surface and the side surface of the insulating layer.

Abstract: A nondestructive inspection apparatus includes an X-ray source, an imaging panel that detects an X-ray, and a shielding plate that shields the X-ray, and the imaging panel and the shielding plate have flexibility that allows to be curved.

Abstract: An aim of the present invention is to make it possible to achieve stable operation of thin film transistors in an imaging panel of an X-ray imaging system that uses an indirect conversion scheme. An imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and bias wiring line. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and irradiated by scintillation light. The bias wiring line is connected to the photoelectric conversion element and applies a reverse bias voltage to the photoelectric conversion element. The thin film transistor includes a semiconductor active layer and a gate electrode. The gate electrode is formed between the substrate and semiconductor active layer. The bias wiring line includes a portion that overlaps the gate electrode and semiconductor active layer as seen from the radiation direction of the scintillation light.

Abstract: Provided is a technique that reduces patterning defects of data lines in an imaging panel and drain electrodes in thin film transistors without lowering the aperture ratio of the imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes, in each of the pixels, a conversion element that converts scintillation light to electric charge, and a thin film transistor connected to the gate line, data line, and conversion element. A drain electrode of the thin film transistor is formed such that edges of the drain electrode near the data line are more inside the pixel than edges of the conversion element near the data line.

Abstract: The present invention aims at inhibiting the occurrence of thinning or disconnecting of the bias wiring line in an imaging panel and X-ray imaging device, thereby inhibiting signal delays, signal transmission defects, and the like. A second contact hole electrically connecting an electrode of a photodiode to a bias wiring line penetrates a second interlayer insulating film and photosensitive resin layer. In the second contact hole, an area of a region where the photosensitive resin layer opens is smaller than an area of a region where the second interlayer insulating film opens.

Abstract: The invention provides a technique inhibiting entry of moisture to an active matrix substrate included in an X-ray imaging device. An active matrix substrate includes, in each of the pixels, a photoelectric conversion element including a pair of electrodes and a semiconductor layer provided between the pair of electrodes, a first flattening film configured as an organic resin film and covering the photoelectric conversion element, and a first inorganic insulating film covering the first flattening film. The first flattening film and the first inorganic insulating film are provided to extend outside the pixel region. Outside the pixel region, the first flattening film is covered with the first inorganic insulating film to prevent exposure of the first flattening film.

Abstract: A second insulating film is disposed so as to cover a conversion element that includes a first insulating film, photodiode, and electrode. The second insulating film is made of a SiNxOy material, where x is greater than 0 and y is greater than or equal to 0. This makes it possible to provide a TFT and photodiode with excellent anti-moisture characteristics.

Abstract: An aim of the present invention is to improve the conversion efficiency of scintillation light into electric charge by a photoelectric conversion element in an imaging panel of an X-ray imaging system using an indirection conversion scheme. An imaging panel generates images based on scintillation light acquired from X-rays that have passed through a specimen. The imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and reflective layer. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and converts incident scintillation light into electric charge. The entirety of a region of a light-receiving surface of the photoelectric conversion element where the scintillation light is incident overlaps the reflective layer as seen from the incident direction of the scintillation light. The reflective layer may be the drain electrode.

Abstract: An X-ray image pickup system (10) includes an X-ray source (16), an image pickup panel (12), a scintillator (13), and an X-ray control unit (14E). The image pickup panel includes a photoelectric conversion element (26), a capacitor (50), a thin film transistor (24), and TFT control units (14A, 14B, 14F). To the photoelectric conversion element (26), scintillation light is projected. The capacitor (50) is connected to the photoelectric conversion element (26), and accumulates charges. The thin film transistor (24) is connected to the capacitor (50). The TFT control units (14A, 14B, 14F) control an operation of the thin film transistor (24). The thin film transistor (24) includes a semiconductor active layer (32) made of an oxide semiconductor. The X-ray control unit (14E) intermittently projects X-ray to the X-ray source (16). The TFT control units (14A, 14B, 14F) cause the thin film transistor (24) to operate when the X-ray is not projected, so as to read out the charges accumulated in the capacitor (50).

Abstract: An aim of the present invention is to provide a technology that increases the aperture ratio of an imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes, in each of the pixels, a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned generally parallel to the data line and is closer to the data line that connects to the thin film transistor than approximately the center in the extension direction of the gate line of the conversion element.

Abstract: A photoelectric converter of one aspect of the present invention is provided with an element substrate having a photodiode and a thin film transistor arranged in matrix form, an interlayer insulating film laminated on the thin film transistor, a first contact hole formed in the interlayer insulating film and reaching a surface of a source electrode of the thin film transistor, and a second contact hole formed in the interlayer insulating film and reaching a surface of a drain electrode of the thin film transistor, in which a source bus line and the source electrode of the thin film transistor are connected via the first contact hole, the drain electrode of the thin film transistor and a lower layer electrode of the photodiode are connected via the second contact hole, and the tapered part of the second contact hole has a gentler inclination than the tapered part of the first contact hole.

Abstract: A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

Abstract: A photosensor substrate (10) includes a plurality of sensor units (1). The sensor units (1) each include a switching element (2), a lower electrode (3) connected to the switching element (2), and a photoelectric conversion element (4). The photosensor substrate (10) includes lines (G and D) connected to the switching elements of the plurality of sensor units and led out of a sensor area (SA), and terminal parts (TG and TD) connected to the lines (G and D) led out of the sensor area (SA). The terminal parts (TG and TD) each include a protective layer (4a) overlapped with the line (G or D) led out of the sensor area and containing a material for the photoelectric conversion element (4), and a terminal conductor (6) connected to the line (G or D) via an opening (CH1) provided in the protective layer (4a).

Abstract: An imaging panel (10) is provided that generates an image based on scintillation light obtained from X-ray having passed through an object. The imaging panel (10) includes: a substrate (40); a plurality of conversion elements (15) converting the scintillation light into charges; an insulating film (45, 46) having a plurality of conductive portions (47) that reach the conversion elements (15), respectively; and bias lines (16) formed on the insulating film (45, 46) so as to cover the conductive portions (47), the bias lines (16) being connected to the conversion elements (15) through the conductive portions (47), respectively, and supplying a bias voltage to the conversion elements (15). A dimension of each of the conductive portions (47) in a direction in which the bias lines (16) extend is greater than a dimension of each of the conductive portions (47) in a width direction of the bias lines (16).

Abstract: This semiconductor device includes a substrate and a thin film transistor supported on the substrate. The thin film transistor includes a gate electrode, a semiconductor layer, a gate-insulating layer provided between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode respectively making contact with the semiconductor layer. The source electrode and the drain electrode respectively include a main layer containing aluminum or copper, a lower layer having a first layer containing refractory metal and positioned at a substrate side of the main layer, and an upper layer having a second layer containing refractory metal. The upper layer is provided so as to cover an upper surface of the main layer and at least the section of the side face of the main layer that overlaps the semiconductor layer.

Abstract: An imaging panel (10) includes a photodiode (15), and a metal layer (43) provided below the photodiode and being in contact with a TFT (14) via a contact hole (CH1). A method of producing the imaging panel (10) includes forming a metal film (43p) covering to protect a first insulating film (42), subsequently forming semiconductor films to configure an n-type amorphous silicon layer (151), an intrinsic amorphous silicon layer (152), and a p-type amorphous silicon layer (153), and further forming the photodiode (15) by patterning the semiconductor films through dry etching.

Abstract: It is an object of the invention to secure a large area of a photodiode and suppress operation property variation and malfunction in an imaging panel and an X-ray imaging device. An imaging panel (10) includes a substrate (40), a TFT (14), an interlayer insulating film (44), a metal layer (45), and a photodiode (15). A data line (12) and the photodiode (15) face each other in a thickness direction of the substrate. The interlayer insulating film (44), which is disposed between the TFT (14) and the photodiode (15), is an SOG film or a photosensitive resin film.

Abstract: According to an embodiment of the present invention, an active matrix substrate manufacturing method includes: a step (a) of forming a thin film transistor on a substrate; a step (b) of forming an interlayer insulating layer covering the thin film transistor; a step (c) of forming a first electrode after the step (b); a step (d) of forming, after the step (c), a photospacer by applying a photosensitive resin material to the substrate and patterning the photosensitive resin material; and a step (e) of performing, after the step (d), plasma processing using a gas that contains a fluorine-based gas but does not contain oxygen gas.