Abstract: Provided is a silicon wafer suitable for manufacturing a semiconductor device having a shallow junction. A silicon wafer wherein, in a region at a depth of less than 50 ?m from a surface, a density of oxygen deposition materials each having a diameter of not less than 10 nm is not more than 1×108/cm3. A silicon wafer for a semiconductor device, which is manufactured by applying heat treatment at a heat treatment temperature of not less than 1000° C. for heat treatment time of not more than 3 msec, wherein, in a region at a depth of less than 50 ?m from a surface, a density of oxygen deposition materials each having a diameter of not less than 10 nm is not more than 1×108/cm3.

Abstract: Silicon single crystal is pulled by the Czochralski method, using an As dopant comprising a mixed sintered compact of arsenic and silicon, the molar ratio of silicon being not smaller than 35% and not greater than 55% relative to arsenic.

Abstract: An object is to provide a vibration suppressing cutting tool which is inexpensive and can damp chattering extremely effectively, and which is simple in structure and is applicable to a wide variety of machining diameters and cutting conditions. The shank 2 of the holder 1 is formed with a pocket 4. In the pocket 4, a vibration suppressing piece 5 is received so as to be movable relative to the holder 1 and not protrudable from the pocket 4. Under kinetic energy from the holder during cutting, the vibration suppressing piece 5 alternately knocks against a pair of opposed inner wall surfaces 4a and 4b of the pocket along its surface, along a plurality of lines or on a plurality of points when the holder vibrates during cutting, thereby damping vibrations of the holder.

Abstract: In order to control a crystal defective area, to inhibit slip generation at the time of annealing treatment, and to manufacture a high quality silicon wafer of high strength with sufficient yields, a method of manufacturing a silicon wafer is provided in which a silicon single crystal is grown by way of Czochralski method under conditions where an oxygen concentration is 0.9×1018 atoms/cm3 or more and an oxidization induced stacking fault density is the maximum in an area within 20 mm of a wafer circumference, and an as-grown defect density of the wafer obtained by slicing the silicon single crystal is 1×107/cm3 or more over the whole region of the wafer.

Abstract: A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.

Abstract: There is provided a silicon member that can prevent the resistivity of a member itself from varying in a semiconductor manufacturing process, in particular, in a plasma processing process, thereby making wafer processing uniform and being not an impurity contamination source to a wafer to be processed, and a method for manufacturing the same. The silicon member having a resistivity of 0.1 ?·cm or more and 100 ?·cm or less is manufactured with steps which are manufacturing a P-type silicon single crystal doped with 13 group atoms of a periodic table having an intrinsic resistivity of 1 ?·cm or more and 100 ?·cm or less, and changing said P-type silicon single crystal into an N-type silicon single crystal by oxygen donors formed by annealing at a temperature of 300° C. or more and 500° C. or less.

Abstract: A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.

Abstract: At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Abstract: Silicon single crystal is pulled by the Czochralski method, using an As dopant comprising a mixed sintered compact of arsenic and silicon, the molar ratio of silicon being not smaller than 35% and not greater than 55% relative to arsenic.

Abstract: At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Abstract: At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300° C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Abstract: A silicon wafer is mirror-polished until obtaining surface roughness Ra of 0.70-1.00 nm, Rq of 0.80-1.10 nm, or Rt of 4.50-7.00 nm. The resulting wafer is heat-treated at a temperature not lower than 1,200.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere. According to another aspect, a silicon wafer is mirror-polished until obtaining surface roughness values Ra' of 0.08-0.70 nm, rms of 0.10-0.90 nm, and P-V of 0.80-5.80 nm in a square area of 90 .mu.m by 90 .mu.m, and surface roughness values Ra' of 0.13-0.40 nm, rms of 0.18-0.50 nm, and P-V of 1.30-2.50 nm in a square area of 500 nm by 500 nm. The resulting wafer is heat-treated at 1,100.degree.-1,300.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere.

Abstract: A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si.sup.30 contained in said single silicon crystals made by the CZ method or the MCZ method into p.sup.31 under neutron irradiation to said single silicon crystals.