Patents by Inventor Kazuhiko Sugiyama

Kazuhiko Sugiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060236781
    Abstract: A cost reduction can be achieved by making a differential pressure type flowmeter simple in structure, and highly accurate flow rate measurements can be attained over the wide flow rate range of 100% to 1% with errors E of less than 1 (% SP) both in real time and in a state of inline. To achieve the ends, a differential pressure type flowmeter comprises an orifice, a detector to detect a fluid pressure P1 on the upstream side of an orifice, a detector to detect a fluid pressure P2 on the downstream side of an orifice, a detector to detect a fluid temperature T on the upstream side of an orifice, and a control computation circuit to compute a fluid's flow rate Q passing through an orifice by using the pressure P1, pressure P2 and temperature T detected with the aforementioned detectors, and the aforementioned fluid's flow rate Q is computed with the equation Q=C1·P1/?{square root over ( )}T·((P2/P1)m?(P2/P1)n)1/2 (where C1 is a proportional constant, and m and n are constants).
    Type: Application
    Filed: June 18, 2004
    Publication date: October 26, 2006
    Applicant: Fujikin Incorporated
    Inventors: Tadahiro Ohmi, Kazuhiko Sugiyama, Tomio Uno, Nobukazu Ikeda, Kouji Nishino, Osamu Nakamura, Ryousuke Dohi, Atsushi Matsumoto
  • Patent number: 7085628
    Abstract: A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided to automatically correct temperature drift of the pressure sensor and accurately detect pressure despite changes in temperature. An embodiment includes an upstream side pressure sensor between an orifice and a control valve, to control flow rate through the orifice by a regulating control valve, while calculating the flow from the upstream side pressure. With a temperature sensor, a memory means, and a temperature drift correcting means which calculates drift of the upstream side pressure sensor from data in the memory means when the temperature of the fluid changes and offsets the output drift of the upstream side pressure sensor with the calculated amount of the output drift, temperature drift of the pressure sensor is automatically corrected, enabling accurate control of flow rate.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: August 1, 2006
    Assignees: Fujikin Incorporated, Tokyo Electron Ltd.
    Inventors: Tadahiro Ohmi, Tomio Uno, Osamu Nakamura, Nobukazu Ikeda, Ryousuke Dohi, Kouji Nishino, Atsushi Matsumoto, Kazuhiko Sugiyama
  • Patent number: 7059363
    Abstract: A method for supplying a specified quantity Q of processing gas while dividing at a desired flow rate ratio Q1/Q2 accurately and quickly from a gas supply facility equipped with a flow controller into a chamber. When a specified quantity Q of gas is supplied while being divided at a desired flow rate ratio Q1/Q2 from a gas supply facility equipped with a flow controller into a reduced pressure chamber C through a plurality of branch supply lines and shower plates fixed to the ends thereof, pressure type division quantity controllers FV1 and FV2 are provided in the plurality of branch supply lines GL1 and GL2.
    Type: Grant
    Filed: January 20, 2003
    Date of Patent: June 13, 2006
    Assignees: Fujikin Incorporated, Tokyo Electron Ltd.
    Inventors: Kazuhiko Sugiyama, Nobukazu Ikeda, Kouji Nishino, Ryosuke Dohi, Toyomi Uenoyama
  • Publication number: 20060076060
    Abstract: Disclosed is a method of controlling the flow rate of clustering fluid using a pressure type flow rate control device in which the flow rate Q of gas passing through an orifice is computed as K=KP1 (where K is a constant) with the gas being in a state where the ratio P2/P1 between the gas pressure P1 on the upstream side of the orifice and the gas pressure P2 on the downstream side of the orifice is held at a value not higher than the critical pressure ratio of the gas wherein the association of molecules is dissociated either by heating the pressure type flow rate control device to the temperature higher than 40° C., or by applying the diluting gas to the clustering fluid to make it lower than a partial pressure so the clustering fluid is permitted to pass through the orifice in a monomolecular state.
    Type: Application
    Filed: July 18, 2005
    Publication date: April 13, 2006
    Applicants: FUJIKIN INCORPORATED, Tadahiro OHMI, TOKYO ELECTRON LTD.
    Inventors: Tadahiro Ohmi, Kazuhiko Sugiyama, Kenetu Mizusawa, Eiji Takahashi, Tomio Uno, Kouji Nishino, Ryousuke Dohi, Nobukazu Ikeda, Masaaki Nagase
  • Patent number: 7014021
    Abstract: A fluid coupling transmits power from a drive side to a driven side by utilizing kinetic energy of fluid such as oil. The fluid coupling comprises a pump impeller (4) provided on a drive shaft (1), a turbine impeller (5) provided on a driven shaft (9), a housing (20) fixed to the pump impeller (4) and surrounding the turbine impeller, and a multiple disc clutch provided between a drive shaft side and a driven shaft side. The multiple disc clutch is operated to couple the drive shaft (1) and the driven shaft (9) mechanically so that the drive shaft and the driven shaft are rotated at the same rotational speed. Thus, the fluid coupling can improve a power transmitting efficiency because of no slip between the rotational speed of the drive shaft and the rotational speed of the driven shaft.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: March 21, 2006
    Assignee: Ebara Corporation
    Inventors: Katsumi Kimura, Kazuo Hattori, Hiroshi Ogata, Yoshinori Kataya, Kazuhiko Sugiyama
  • Publication number: 20050260824
    Abstract: The present invention provides a semiconductor device manufacturing line for applying a series of processes on a semiconductor substrate, and forming an integrated circuit on the semiconductor substrate by employing a semiconductor wafer having a diameter of 6 inches (150±3 mm: SEAJ specification) or less for the semiconductor substrate. This manufacturing line comprises two sub-lines conforming to the same specifications, each of these sub-lines is composed of a series of processing units including a film forming unit, a pattern exposure unit, an etching unit, and a test unit. In at least one pattern exposure unit and one etching unit, fine processing of 0.3 ?m or less can be performed.
    Type: Application
    Filed: July 27, 2005
    Publication date: November 24, 2005
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Junichi Inoue, Teruo Asakawa, Kazuhiko Sugiyama
  • Patent number: 6967954
    Abstract: ATM edge node switching equipment utilizes an IIP-VPN function, which can achieve a low cost VPN compared with an L2-VPN in which a user terminal is connected to the ATM edge node switching equipment by a mesh connection. This connection is provided, by connecting the user terminal and the ATM edge node switching equipment with one leased line. The ATM edge node switching equipment has an IP data packet distribution unit, which distributes each of IP data packets to each of the plural user terminals, by utilizing a IP-VPN unit using a destination IP address of each of the plural user terminals. The IP-VPN unit has an inputted IP data packet analyzing section that obtains an input VC (virtual channel) number and also obtains a VPN-ID (virtual private network-identifier) for distinguishing each of the user terminals and a QOS (quality of service) type set by QOS information from a header part of the IP data packet transferred from one of the user terminals.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: November 22, 2005
    Assignee: NEC Corporation
    Inventor: Kazuhiko Sugiyama
  • Patent number: 6964279
    Abstract: A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by: Qc=KP2m(P1?P2)n so that the flow rate can be controlled to the target flow rate with high precision and speed. Also provided is an improved pressure-type flow rate control apparatus in which a pressure ratio P2/P1=r, obtained from an upstream pressure P1 and a downstream pressure P2 is constantly compared with a critical value r, and under critical conditions (r?rc), the flow rate is calculated by: Qc=KP1. Under non-critical conditions (r>rc), the flow rate is calculated by Qc=KP2m(P1?P2)n.
    Type: Grant
    Filed: November 22, 2002
    Date of Patent: November 15, 2005
    Assignees: Fujikin Incorporated, Tokyo Electron Ltd.
    Inventors: Tadahiro Ohmi, Tomio Uno, Osamu Nakamura, Nobukazu Ikeda, Ryousuke Dohi, Kouji Nishino, Atsushi Matsumoto, Kazuhiko Sugiyama, Shujiro Inui, Taiji Sakai, Masanori Ueyama
  • Publication number: 20050212300
    Abstract: A vertical shaft windmill is provided in which: a casing (7) extends further upward than a lowest arm (5L); a radial bearing (BI) is fixed to the outer part of the casing (7); and the arm (5L) is mounted for rotation to the casing (7) through the radial bearing (BI). Unstable conditions in the overhang region can be eliminated without decreasing its wind receiving area and without interference with other members.
    Type: Application
    Filed: February 28, 2003
    Publication date: September 29, 2005
    Inventors: Katsumi Kimura, Yoshihiko Ando, Masaaki Imafuku, Yoshiyuki Maruta, Masanori Goto, Kazuya Hirata, Kenji Ichihara, Kazuhiko Sugiyama, Kimi Sakurai, Yukio Suzuki
  • Publication number: 20050179259
    Abstract: A pipe joint 1 comprises a first joint member 2 of synthetic resin having an annular recessed portion 7 in an end face thereof, and a second joint member 3 of synthetic resin having an annular ridge 8 on an end face thereof. The ridge 8 is fitted in the opening of the recessed portion 7, with a synthetic resin gasket 4 fitted in the recessed portion 7.
    Type: Application
    Filed: March 19, 2003
    Publication date: August 18, 2005
    Inventors: Kazuhiko Sugiyama, Keiko Hada, Eiji Ideta, Nobukazu Ikeda, Naofumi Yasumoto, Michio Yamaji
  • Publication number: 20050164818
    Abstract: The present invention relates to a transmission apparatus (15) including at least one of a dividing unit (6) and a differential planetary gear unit (30), and a joint unit (20). A rotational power, which has been input to the transmission apparatus (15), is transmitted to the joint unit (20) via the dividing unit (6) or the differential planetary gear unit (30). A rotational power to be input to the joint unit (20) is smaller than the rotational power which has been input to the transmission apparatus (15), and the joint unit comprises a fluid coupling.
    Type: Application
    Filed: February 25, 2003
    Publication date: July 28, 2005
    Inventors: Katsumi Kimura, Toshio Miwa, Michio Takashima, Takeshi Usami, Kazuhiko Sugiyama
  • Publication number: 20050113201
    Abstract: A differential planetary gear apparatus according to the present invention is characterized in that the differential planetary gear apparatus has a single-pinion-type structure in which one planetary gear (3) is arranged in a radial direction and one or more planetary gears (3) are arranged in a circumferential direction in a region between a sun gear (1) and a ring gear (2). Each of a drive source (4), a speed-change motive source (5), and a driven unit (6) is disposed at any one of an input side (I), an output side (O), and a speed-change side (T). The speed-change motive source (5) comprises an electric motor.
    Type: Application
    Filed: February 21, 2003
    Publication date: May 26, 2005
    Inventors: Katsumi Kimura, Toshio Miwa, Michio Takashima, Takeshi Usami, Kazuhiko Sugiyama
  • Publication number: 20050112889
    Abstract: The present invention provides a semiconductor device manufacturing line for applying a series of processes on a semiconductor substrate, and forming an integrated circuit on the semiconductor substrate by employing a semiconductor wafer having a diameter of 6 inches (150±3 mm: SEAJ specification) or less for the semiconductor substrate. This manufacturing line comprises two sub-lines conforming to the same specifications, each of these sub-lines is composed of a series of processing units including a film forming unit, a pattern exposure unit, an etching unit, and a test unit. In at least one pattern exposure unit and one etching unit, fine processing of 0.3 ?m or less can be performed.
    Type: Application
    Filed: December 29, 2004
    Publication date: May 26, 2005
    Inventors: Junichi Inoue, Teruo Asakawa, Kazuhiko Sugiyama
  • Patent number: 6848470
    Abstract: A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time ?t from the starting point. The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.
    Type: Grant
    Filed: February 11, 2004
    Date of Patent: February 1, 2005
    Assignees: Fujikin Incorporated, Tokyo Electron Ltd.
    Inventors: Tadahiro Ohmi, Satoshi Kagatsume, Kazuhiko Sugiyama, Yukio Minami, Kouji Nishino, Ryousuke Dohi, Katsunori Yonehana, Nobukazu Ikeda, Michio Yamaji, Jun Hirose, Kazuo Fukazawa, Hiroshi Koizumi, Hideki Nagaoka, Akihiro Morimoto, Tomio Uno, Eiji Ideta, Atsushi Matsumoto, Toyomi Uenoyama, Takashi Hirose
  • Publication number: 20050005994
    Abstract: A method for supplying a specified quantity Q of processing gas while dividing at a desired flow rate ratio Q1/Q2 accurately and quickly from a gas supply facility equipped with a flow controller into a chamber. When a specified quantity Q of gas is supplied while being divided at a desired flow rate ratio Q1/Q2 from a gas supply facility equipped with a flow controller into a reduced pressure chamber C through a plurality of branch supply lines and shower plates fixed to the ends thereof, pressure type division quantity controllers FV1 and FV2 are provided in the plurality of branch supply lines GL1 and GL2.
    Type: Application
    Filed: January 20, 2003
    Publication date: January 13, 2005
    Inventors: Kazuhiko Sugiyama, Nobukazu Ikeda, Kouji Nishino, Ryousuke Dohi, Toyomi Uenoyama
  • Patent number: 6841485
    Abstract: The present invention provides a semiconductor device manufacturing line for applying a series of processes on a semiconductor substrate, and forming an integrated circuit on the semiconductor substrate by employing a semiconductor wafer having a diameter of 6 inches (150±3 mm: SEAJ specification) or less for the semiconductor substrate. This manufacturing line comprises two sub-lines conforming to the same specifications, each of these sub-lines is composed of a series of processing units including a film forming unit, a pattern exposure unit, an etching unit, and a test unit. In at least one pattern exposure unit and one etching unit, fine processing of 0.3 ?m or less can be performed.
    Type: Grant
    Filed: April 11, 2000
    Date of Patent: January 11, 2005
    Assignee: Tokyo Electron Limited
    Inventors: Junichi Inoue, Teruo Asakawa, Kazuhiko Sugiyama
  • Patent number: 6820632
    Abstract: A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time At from the starting point. The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: November 23, 2004
    Assignees: Fujikin Incorporated, Tokyo Electron Ltd.
    Inventors: Tadahiro Ohmi, Satoshi Kagatsume, Kazuhiko Sugiyama, Yukio Minami, Kouji Nishino, Ryousuke Dohi, Katsunori Yonehana, Nobukazu Ikeda, Michio Yamaji, Jun Hirose, Kazuo Fukazawa, Hiroshi Koizumi, Hideki Nagaoka, Akihiro Morimoto, Tomio Uno, Eiji Ideta, Atsushi Matsumoto, Toyomi Uenoyama, Takashi Hirose
  • Publication number: 20040204794
    Abstract: A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate.
    Type: Application
    Filed: August 27, 2003
    Publication date: October 14, 2004
    Inventors: Tadahiro Ohmi, Tomio Uno, Osamu Nakamura, Nobukazu Ikeda, Ryousuke Dohi, Kouji Nishino, Atsushi Matsumoto, Kazuhiko Sugiyama, Shujiro Inui, Taiji Sakai, Masanori Ueyama
  • Publication number: 20040154664
    Abstract: A fluid supply apparatus with a plurality of flow lines branching out from one regulator for adjustment of pressure, the flow lines being arranged in parallel, wherein a measure is taken that the operation, that is, opening or closing of one flow passage will have no transient effect on the steady flow of the other flow passages. For this purpose, each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time &Dgr;t from the starting point.
    Type: Application
    Filed: February 11, 2004
    Publication date: August 12, 2004
    Applicants: Fujikin Incorporated, Tokyo Electron Ltd.
    Inventors: Tadahiro Ohmi, Satoshi Kagatsume, Kazuhiko Sugiyama, Yukio Minami, Kouji Nishino, Ryousuke Dohi, Katsunori Yonehana, Nobukazu Ikeda, Michio Yamaji, Jun Hirose, Kazuo Fukazawa, Hiroshi Koizumi, Hideki Nagaoka, Akihiro Morimoto, Tomio Uno, Eiji Ideta, Atsushi Matsumoto, Toyomi Uenoyama, Takashi Hirose
  • Publication number: 20040144178
    Abstract: A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided in which the temperature drift of the pressure sensor is automatically corrected, and pressure can be accurately detected in spite of changes in temperature.
    Type: Application
    Filed: November 7, 2003
    Publication date: July 29, 2004
    Inventors: Tadahiro Ohmi, Tomio Uno, Osamu Nakamura, Nobukazu Ikeda, Ryosuke Dohi, Kouji Nishino, Atsushi Matsumoto, Kazuhiko Sugiyama