Abstract: In order to improve reliability of a semiconductor device, in a semiconductor chip according to one embodiment, an uneven shape is formed on an exposed surface of a back surface electrode formed on a back surface of the semiconductor chip.

Abstract: In order to improve reliability of a semiconductor device, in a semiconductor chip according to one embodiment, an uneven shape is formed on an exposed surface of a back surface electrode formed on a back surface of the semiconductor chip.

Abstract: The pattern defect repairing apparatus comprises an application head, a waste ejection board, a waste ejection vessel, a waste ejection board moving stage, a head lifting stage, and an application unit base. The application head comprises an ink-jet head and a head holder. An ink jet head has an ejection nozzle, and is attached to the head holder and able to be moved up and down by the head lifting stage. The waste ejection vessel is provided to the waste ejection board and able to be moved between a waste ejection position and a retreated position by the waste ejection board moving stage. Repairing material is ejected for waste onto the waste ejection board set in the vicinity of the nozzle immediately before application to repair the defect. The tip end of the nozzle is prevented from being dried.

Abstract: Reduction of damage to a semiconductor device due to a marking process while inhibiting deterioration of a mark can not be achieved in conventional processes for manufacturing semiconductor devices. A process for manufacturing the semiconductor device 100 involves irradiating the marking film 21 with an energy beam through the transparent protective film 31 after the protective film 31 is formed, and such irradiation causes a chemical modification of the material of the marking film 21 to create the marks. According to the above-described process for manufacturing the semiconductor device 100, the region for the marking or the upper surface of the marking film 21 is sheathed by the protective film 31, so that a damage to the semiconductor chip 11 due to the generations of dust, exothermic heat, gas, stress or the like during the marking operation can be reduced. This allows achieving the process for manufacturing the semiconductor device 100 that provides a manufacture of better quality of the marks.

Abstract: The pattern defect repairing apparatus comprises an application head, a waste ejection board, a waste ejection vessel, a waste ejection board moving stage, a head lifting stage, and an application unit base. The application head comprises an ink-jet head and a head holder. An ink jet head has an ejection nozzle, and is attached to the head holder and able to be moved up and down by the head lifting stage. The waste ejection vessel is provided to the waste ejection board and able to be moved between a waste ejection position and a retreated position by the waste ejection board moving stage. Repairing material is ejected for waste onto the waste ejection board set in the vicinity of the nozzle immediately before application to repair the defect. The tip end of the nozzle is prevented from being dried.

Abstract: Reduction of damage to a semiconductor device due to a marking process while inhibiting deterioration of a mark can not be achieved in conventional processes for manufacturing semiconductor devices. A process for manufacturing the semiconductor device 100 involves irradiating the marking film 21 with an energy beam through the transparent protective film 31 after the protective film 31 is formed, and such irradiation causes a chemical modification of the material of the marking film 21 to create the marks. According to the above-described process for manufacturing the semiconductor device 100, the region for the marking or the upper surface of the marking film 21 is sheathed by the protective film 31, so that a damage to the semiconductor chip 11 due to the generations of dust, exothermic heat, gas, stress or the like during the marking operation can be reduced. This allows achieving the process for manufacturing the semiconductor device 100 that provides a manufacture of better quality of the marks.

Abstract: In an image display device having, in each pixel, an electron emitter containing a first electrode, an insulating layer, and a second electrode arranged in this order, the insulating layer is formed by anodic oxidation using the first electrode and has defects, if any, in a number of 3×1019 or less cubic centimeter. The electron emitter has a longer life, and the image display device using the electron emitter has improved reliability and image quality.

Abstract: A guide wire having an elongated core wire provided with a tabular distal end portion, and a coiled wire provided on an outer circumference of the core wire, wherein the distal end portion of the core wire is provided with a cutout section or a rased section so that a diametrical cross-sectional area of the distal end portion of the core wire gradually decreases toward a distal end thereof.

Abstract: A guide wire having an elongated core wire provided with a tabular distal end portion, and a coiled wire provided on an outer circumference of the core wire, wherein the distal end portion of the core wire is provided with a cutout section or a rased section so that a diametrical cross-sectional area of the distal end portion of the core wire gradually decreases toward a distal end thereof.