Patents by Inventor Kazuhiro Mori

Kazuhiro Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11479839
    Abstract: A method for producing a hot-rolled titanium plate includes, [1] melting at least one part of the side surface of the titanium slab by radiating a beam or plasma toward the side surface, not toward the surface to be rolled, and thereafter causing re-solidification to form, in the side surface, a layer having grain diameter of 1.5 mm or less and a depth of 3.0 mm or more from the side surface; [2] performing a finishing process on the surface to be rolled of the titanium slab in which the layer is formed, to thereby bring a slab flatness index X to 3.0 or less; and [3] subjecting the titanium slab after the finishing process to hot rolling under a condition in which a length of an arc of contact of a roll L in a first pass of rough rolling is 230 mm or more.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: October 25, 2022
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Yoshitsugu Tatsuzawa, Tomonori Kunieda, Kenichi Mori, Kazuhiro Takahashi, Hideki Fujii
  • Publication number: 20220336493
    Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Applicant: Kioxia Corporation
    Inventors: Yuta SAITO, Shinji MORI, Keiichi SAWA, Kazuhisa MATSUDA, Kazuhiro MATSUO, Hiroyuki YAMASHITA
  • Publication number: 20220336492
    Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 20, 2022
    Applicant: KIOXIA CORPORATION
    Inventors: Yuta SAITO, Shinji MORI, Atsushi TAKAHASHI, Toshiaki YANASE, Keiichi SAWA, Kazuhiro MATSUO, Hiroyuki YAMASHITA
  • Publication number: 20220328222
    Abstract: A soft magnetic alloy including an internal area having a soft magnetic type alloy composition including Fe and Co, a Co concentrated area existing closer to a surface side than the internal area and having a higher Co concentration than in the internal area, and a SB concentrated area existing closer to the surface side than the Co concentrated area and having a higher concentration of at least one element selected from Si and B than in the internal area.
    Type: Application
    Filed: February 15, 2022
    Publication date: October 13, 2022
    Applicant: TDK CORPORATION
    Inventors: Hironobu KUMAOKA, Kazuhiro YOSHIDOME, Akito HASEGAWA, Satoko MORI
  • Publication number: 20220328223
    Abstract: A soft magnetic alloy including an internal area having a soft magnetic type alloy composition including Fe and Co, a Co concentrated area existing closer to a surface side than the internal area and having a higher Co concentration than in the internal area, and a Co concentration degree of the Co concentrated area is larger than 1.2.
    Type: Application
    Filed: March 17, 2022
    Publication date: October 13, 2022
    Applicant: TDK CORPORATION
    Inventors: Hironobu KUMAOKA, Kazuhiro YOSHIDOME, Akito HASEGAWA, Satoko MORI
  • Publication number: 20220319749
    Abstract: A soft magnetic alloy comprising an internal area having a soft magnetic type alloy composition including Fe and Co, a Co concentrated area existing closer to a surface side than the internal area and having a higher Co concentration than in the internal area, a SB concentrated area existing closer to the surface side than the Co concentrated area and having a higher concentration of at least one element selected from Si and B than in the internal area, and a Fe concentrated area including Fe existing closer to the surface side than the SB concentrated area; wherein a crystalized area ratio of the SB concentrated area represented by SSBcry/SSB and a crystalized area ratio of the Fe concentrated area represented by SFecry/SFe, satisfy a relation of (SSBcry/SSB)<(SFecry/SFe).
    Type: Application
    Filed: February 15, 2022
    Publication date: October 6, 2022
    Applicant: TDK CORPORATION
    Inventors: Hironobu KUMAOKA, Kazuhiro YOSHIDOME, Akito HASEGAWA, Satoko MORI
  • Publication number: 20220310640
    Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer.
    Type: Application
    Filed: August 30, 2021
    Publication date: September 29, 2022
    Applicant: Kioxia Corporation
    Inventors: Natsuki FUKUDA, Ryota NARASAKI, Takashi KURUSU, Yuta KAMIYA, Kazuhiro MATSUO, Shinji MORI, Shoji HONDA, Takafumi OCHIAI, Hiroyuki YAMASHITA, Junichi KANEYAMA, Ha HOANG, Yuta SAITO, Kota TAKAHASHI, Tomoki ISHIMARU, Kenichiro TORATANI
  • Publication number: 20220302162
    Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.
    Type: Application
    Filed: August 26, 2021
    Publication date: September 22, 2022
    Inventors: Hiroyuki Yamashita, Yuta Saito, Keiichi Sawa, Kazuhiro Matsuo, Yuta Kamiya, Shinji Mori, Kota Takahashi, Junichi Kaneyama, Tomoki Ishimaru, Kenichiro Toratani, Ha Hoang, Shouji Honda, Takafumi Ochiai
  • Publication number: 20220288826
    Abstract: A manufacturing apparatus for a molded product of a fiber-reinforced resin includes: a heating tube; a screw inserted in the heating tube; an injector provided on a front end side of the screw; a resin feeder configured to feed a matrix resin into the heating tube; a long-fiber feeder configured to feed a long fiber into the heating tube; and a short-fiber feeder configured to feed a short fiber shorter than the long fiber into the heating tube. The short-fiber feeder is closer to a rear end of the screw than the long-fiber feeder is.
    Type: Application
    Filed: February 25, 2022
    Publication date: September 15, 2022
    Inventors: Masatoshi Kobayashi, Kazuhiro Mori, Mitsuharu Kan, Satoshi Ozaki
  • Patent number: 11440920
    Abstract: The present invention provides a compound having a dihydropyran structure, a method of producing a compound having a dihydropyran structure, a method of producing Pre-SMTP, a method of producing a group of SMTPs, and a pharmaceutical composition. The compound having a dihydropyran structure can be a useful intermediate in the chemically producing a group of Pre-SMTP and SMTP. Specifically, the compound having a dihydropyran structure is represented by the following formula (1), wherein: R3Si is a silyl group selected from TMS: trimethylsilyl, TES: triethysilyl, TBS (TBDMS): tert-butyldimethylsil, TIPS: triisopropylsilyl, TBDPS: tert-butyldiphenylsilyl, X is selected from COOH, CHO, and —CH?C(CH3)—(CH2)2—CH?C(CH3)2.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: September 13, 2022
    Assignee: SHOWA UNIVERSITY
    Inventors: Takashi Itoh, Kazuhiro Nagata, Takuya Kanemitsu, Michiko Miyazaki, Yuichiro Tomisawa, Misa Mori
  • Publication number: 20220285090
    Abstract: The present invention provides a current transformer module that can achieve downsizing and keeping the creepage distance of insulation simultaneously. The current transformer module 12 according to the present invention comprises a current transformer 10 and a casing 80 for housing the current transformer, wherein the current transformer includes a resin-made bobbin 20 with a through hollow section 21 and a core 30 having legs 42 inserted at least into the hollow section, the bobbin having a primary coil 26 and a wire-wound secondary coil 27 on the outer periphery of the hollow section, wherein the bobbin has insulation walls 22, 24 between the primary coil and the secondary coil wherein the insulation wall has recesses 23,25, and wherein the casing are provided with protrusions 83, 87 adapted to fit into the recesses.
    Type: Application
    Filed: June 23, 2020
    Publication date: September 8, 2022
    Applicant: SHT Corporation Limited
    Inventors: Yuichi IMAZATO, Kazuhiro KASATANI, Kazusa MORI
  • Patent number: 11432728
    Abstract: This blood pressure/pulse wave measurement device obtains a pulse wave velocity (baPWV) that is an index representing the arterial stiffness of a subject. A lower limb/upper limb blood pressure ratio (ABI) that is an index representing the clogging of the blood vessels of a subject is obtained. When the lower limb/upper limb blood pressure ratio (ABI) of the subject surpasses a preset first threshold value, a point (Px) representing the pulse wave velocity (baPWV) is displayed on a one-dimensional graph (46). When the lower limb/upper limb blood pressure ratio (ABI) of the subject is equal to or less than the preset first threshold value, a point representing the lower limb/upper limb blood pressure ratio (ABI) is displayed on the one-dimensional graph (46) instead of the point representing the pulse wave velocity (baPWV).
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: September 6, 2022
    Assignee: Fukuda Denshi Co., Ltd.
    Inventors: Naoki Mori, Mayuko Kaneda, Masahiko Yumoto, Kazuhiro Matsui
  • Publication number: 20220277892
    Abstract: The present invention provides a current transformer having excellent temperature characteristics and realizing high-precision adjustment of the output voltage via gap adjustment and small tolerance, and a method for manufacturing the same. The core component for current transformers of the present invention, comprises an E-type core 40 formed of an electromagnetic steel sheet and having three legs 41, 42, 41 extending substantially parallel to each other and a connecting part 43 connected at each end of the legs, and an I-type core 50 formed of an electromagnetic steel sheet and having the same length as the connecting portion, the I-type core being placed on and bonded to the connecting part of the E-type core to form a single-piece core component.
    Type: Application
    Filed: June 23, 2020
    Publication date: September 1, 2022
    Applicant: SHT Corporation Limited
    Inventors: Yuichi IMAZATO, Kazuhiro KASATANI, Kazusa MORI
  • Publication number: 20220262557
    Abstract: The present invention provides a current transformer module that can prevent the primary coil from being lifted or dropped and prevent the bobbin from being cracked when the primary coil is inserted into the bobbin. The current transformer module 12 of the present invention comprises a current transformer 10 including a resin-made bobbin 20 and a core 50 mounted on the bobbin, wherein the bobbin has a U-shaped primary coil 30 disposed in a primary coil through-hole 40 and a wire-wound secondary coil 27, and a casing 80 for housing the current transformer, wherein the primary coil is a U-shaped pin having a pair of legs 32, 32 and a U-shaped bent portion 31 for connecting the legs, and the casing has a concaved contact area 82 positioned opposite the U-shaped bent portion of the primary coil to prevent the primary coil from falling out.
    Type: Application
    Filed: January 27, 2021
    Publication date: August 18, 2022
    Applicant: SHT Corporation Limited
    Inventors: Yuichi IMAZATO, Kazuhiro KASATANI, Kazusa MORI
  • Publication number: 20220262954
    Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Applicant: Kioxia Corporation
    Inventors: Tomoki ISHIMARU, Shinji MORI, Kazuhiro MATSUO, Keiichi SAWA, Akifumi GAWASE
  • Publication number: 20220246640
    Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.
    Type: Application
    Filed: April 20, 2022
    Publication date: August 4, 2022
    Applicant: KIOXIA CORPORATION
    Inventors: Keiichi SAWA, Kazuhiro MATSUO, Kazuhisa MATSUDA, Hiroyuki YAMASHITA, Yuta SAITO, Shinji MORI, Masayuki TANAKA, Kenichiro TORATANI, Atsushi TAKAHASHI, Shouji HONDA
  • Patent number: 11404437
    Abstract: A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×1017 [EA/cm3] or higher and 1.3×1020 [EA/cm3] or lower.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: August 2, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Yuta Saito, Shinji Mori, Keiichi Sawa, Kazuhisa Matsuda, Kazuhiro Matsuo, Hiroyuki Yamashita
  • Patent number: 11401590
    Abstract: Provided is a soft magnetic alloy having a composition of a compositional formula (Fe(1?(?+?))X1?X2?)(1?(a+b+c+d+e))PaCbSicCudMe. X1 is one or more selected from a group consisting of Co and Ni, X2 is one or more selected from a group consisting of Al, Mn, Ag, Zn, Sn, As, Sb, Bi, N, 0, and rare earth elements, and M is one or more selected from the group consisting of Nb, Hf, Zr, Ta, Ti, Mo, W and V. 0.050?a?0.17, 0<b<0.050, 0.030<c?0.10, 0<d?0.020, 0?e?0.030, ??0, ??0, and 0??+??0.50.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: August 2, 2022
    Assignee: TDK CORPORATION
    Inventors: Akihiro Harada, Hiroyuki Matsumoto, Kenji Horino, Kazuhiro Yoshidome, Akito Hasegawa, Hajime Amano, Kensuke Ara, Seigo Tokoro, Masakazu Hosono, Takuma Nakano, Satoko Mori
  • Patent number: 11398494
    Abstract: In one embodiment, a semiconductor storage device includes a stacked body in which a plurality of conducting layers are stacked through a plurality of insulating layers in a first direction, a semiconductor layer penetrating the stacked body, extending in the first direction and including metal atoms, and a memory film including a first insulator, a charge storage layer and a second insulator that are provided between the stacked body and the semiconductor layer. The semiconductor layer surrounds a third insulator penetrating the stacked body and extending in the first direction, and at least one crystal grain in the semiconductor layer has a shape surrounding the third insulator.
    Type: Grant
    Filed: March 5, 2020
    Date of Patent: July 26, 2022
    Assignee: Kioxia Corporation
    Inventors: Yuta Saito, Shinji Mori, Atsushi Takahashi, Toshiaki Yanase, Keiichi Sawa, Kazuhiro Matsuo, Hiroyuki Yamashita
  • Publication number: 20210269262
    Abstract: An unloading apparatus comprises a sensor interface, a gripping unit interface and a processor. A sensor interface acquires a photographed image from a sensor that photographs an image of a cargo group. A processor transmits, in a case of successfully recognizing each piece of cargo of a same-type cargo group, a first control signal to the gripping unit to perform unloading according to a first gripping method corresponding to the same-type cargo group, and transmits, in a case of failing to recognize each piece of cargo of the same-type cargo group, a second control signal to the gripping unit to perform unloading according to a second gripping method corresponding to a mixed-type cargo group including different types of cargo.
    Type: Application
    Filed: May 19, 2021
    Publication date: September 2, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, Toshiba Infrastructure Systems & Solutions Corporation
    Inventors: Kazuhiro MORI, Hiroshi SUKEGAWA