Patents by Inventor Kazuhiro Morimoto

Kazuhiro Morimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11399227
    Abstract: Provided are a wireless earphone charger, a wireless earphone, and a wireless earphone system that improve visibility and design of an indicator of the charger. The wireless earphone charger 3 is configured to charge a wireless earphone including a receiving circuit 141, 241 configured to receive a sound signal via a wireless communication line, and an earphone rechargeable battery 15, 25 configured to charge power to be supplied to the receiving circuit. The wireless earphone charger includes a rechargeable battery 35 configured to charge power to be supplied to the earphone rechargeable battery, an indicator 34A configured to indicate a plurality of indication modes, and a controller 39 configured to switch the indication modes. The indication modes of the indicator include a first indication mode for indicating a remaining power of the rechargeable battery, and a second indication mode for indicating a remaining power of the earphone rechargeable battery.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: July 26, 2022
    Assignee: AUDIO—TECHNICA CORPORATION
    Inventors: Kazuhiro Onizuka, Yasuyuki Morimoto, Takashi Nara
  • Publication number: 20220216251
    Abstract: An apparatus includes a photodiode including an anode and a cathode, a switch connected to a node of one of the anode and the cathode and to a power supply line via which a driving voltage is supplied, and functioning to switch a resistance value between the node and the power supply line, and a generation unit configured to generate a pulse signal for controlling switching of the switch. The apparatus is operable in one of two modes including a first mode and a second mode, the second mode being usable in a lower luminance condition than a luminance condition in the first mode. In an exposure period for acquiring one frame of signals, the number of pulse signals in the second mode is smaller than in the first mode.
    Type: Application
    Filed: December 22, 2021
    Publication date: July 7, 2022
    Inventors: Kazuhiro Morimoto, Wataru Endo, Fumihiro Inui
  • Publication number: 20220130877
    Abstract: A photoelectric conversion apparatus includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type that is arranged at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type and which is arranged at a second depth deeper than the first depth. A fourth semiconductor region at least one of a conductivity type and an impurity concentration of which is different from those of a third semiconductor region of the second conductivity type is arranged at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than that of the avalanche multiplication unit.
    Type: Application
    Filed: October 25, 2021
    Publication date: April 28, 2022
    Inventors: Aymantarek Abdelghafar, Junji Iwata, Kazuhiro Morimoto
  • Patent number: 11309442
    Abstract: A semiconductor substrate has a first surface and a second surface which is opposite to the first surface. A photoelectric conversion portion has a PN junction configured with first and second semiconductor regions of different conductivity types. A buried portion is buried in the semiconductor substrate and includes an electrode and a dielectric member located between the electrode and the semiconductor substrate and in contact with the second semiconductor region. The second semiconductor region is located in a position deeper than the first semiconductor region. The buried portion is located to extend from a first surface to a position deeper than the first semiconductor region. Electric potentials are supplied to the first semiconductor region, the second semiconductor region, and the electrode in such a manner that an inversion layer occurring between the electrode and the second semiconductor region and the first semiconductor region are in contact with each other.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: April 19, 2022
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiro Morimoto, Hajime Ikeda, Junji Iwata
  • Publication number: 20220115366
    Abstract: A photoelectric conversion apparatus includes: a first substrate including an avalanche photodiode; and a second substrate, in which the first substrate and the second substrate are stacked on each other, and further includes: a temperature detection unit arranged in at least one of the first substrate and the second substrate and having an output characteristic depending on a temperature; and a temperature value generating circuit arranged outside the first substrate and configured to convert output from the temperature detection unit into a temperature value signal that is a signal indicating temperature information.
    Type: Application
    Filed: October 11, 2021
    Publication date: April 14, 2022
    Inventors: Yasuharu Ota, Yukihiro Kuroda, Kazuhiro Morimoto
  • Publication number: 20220085227
    Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.
    Type: Application
    Filed: September 27, 2021
    Publication date: March 17, 2022
    Inventors: Kazuhiro Morimoto, Mahito Shinohara
  • Publication number: 20220029041
    Abstract: A system that can acquire a larger amount of information is provided. In the disclosure, calculation processing is performed on a data set including a plurality of pieces of data each including light amount distribution information on a two-dimensional plane that is acquired by a detection unit and time information indicating a time at which the light amount distribution information is acquired. In the calculation processing, among vectors in traveling directions of observation target light, a vector component in a direction orthogonal to the two-dimensional plane is estimated from the data set.
    Type: Application
    Filed: July 15, 2021
    Publication date: January 27, 2022
    Inventors: Hiroshi Sekine, Kazuhiro Morimoto
  • Publication number: 20220027640
    Abstract: In a road type determination apparatus, an image information acquiring unit acquires image information in which an image of a travel road on which a vehicle is traveling is captured. A scene determining unit determines a traveling scene of the travel road based on the image information. An ordinary road likelihood calculating unit calculates an ordinary road likelihood that indicates that a type of the travel road of the vehicle is an ordinary road based on the traveling scene. A limited-access road likelihood calculating unit calculates a limited-access road likelihood that indicates that the type of the travel road of the vehicle is a limited-access road based on the traveling scene. A type determining unit determines the type of the travel road of the vehicle based on the ordinary road likelihood and the limited-access road likelihood.
    Type: Application
    Filed: October 8, 2021
    Publication date: January 27, 2022
    Inventors: Takatoshi TOSA, Takayuki KONDOH, Shin TANAKA, Yuta IKEZAWA, Kazuhiro MORIMOTO
  • Publication number: 20220022781
    Abstract: A system includes a light source configured to emit pulsed laser light, and a photodetection unit including a plurality of photoelectric conversion units arranged in a two-dimensional plane, wherein an emission timing of the light source and a detection timing of the photodetection unit are controlled by a timing control unit, wherein the photodetection unit detects scattered light on the two-dimensional plane, of the pulsed laser light emitted from the light source and entering an object, and wherein change of a refractive index of the object is estimated from change of light speed of the scattered light.
    Type: Application
    Filed: July 13, 2021
    Publication date: January 27, 2022
    Inventors: Kazuhiro Morimoto, Daiki Shirahige
  • Publication number: 20220026571
    Abstract: A light detection system includes a light detection unit including a plurality of photoelectric conversion portions and a calculation processing unit configured to execute calculation based on information acquired by the light detection unit, wherein the light detection unit acquires light amount distribution information of light based on an incident light beam incident on an object from a laser light source and light amount distribution information of light based on a reflected light beam reflected from the object in a two-dimensional plane, and the calculation processing unit calculates, from the light amount distribution information of light based on the incident light beam, the light amount distribution information of light, and time information, information about a normal vector with respect to a reflection plane of the object, and wherein the normal vector is a vector in three dimensions which includes a direction orthogonal to the two-dimensional plane.
    Type: Application
    Filed: July 15, 2021
    Publication date: January 27, 2022
    Inventors: Daiki Shirahige, Hiroshi Sekine, Kazuhiro Morimoto
  • Publication number: 20220026542
    Abstract: An optical detection apparatus includes a trench isolation portion provided in a substrate and disposed between a plurality of photoelectric conversion elements. Each of the plurality of photoelectric conversion elements includes an avalanche diode. The avalanche diode includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region having an impurity concentration lower than impurity concentrations of the first and second semiconductor regions. The trench isolation portion includes a conductor and an insulator disposed between the conductor and the avalanche diode, and on a sidewall of the trench isolation portion, a second conductivity type layer is formed in which charges of the second conductivity type are accumulated, and the second conductivity type layer and the second semiconductor region are in contact with each other.
    Type: Application
    Filed: July 14, 2021
    Publication date: January 27, 2022
    Inventor: Kazuhiro Morimoto
  • Patent number: 11158755
    Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: October 26, 2021
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiro Morimoto, Mahito Shinohara
  • Publication number: 20200244909
    Abstract: A photoelectric conversion apparatus includes a photodiode, a generation circuit, a first control circuit, and a second control circuit. The photodiode is configured to perform avalanche multiplication. The generation circuit is configured to generate a control signal. The first control circuit is configured to be controlled by the control signal to be in a standby state where the avalanche multiplication by the photodiode is possible and in a recharging state for returning the photodiode having performed the avalanche multiplication to the standby state. The second control circuit is configured to count a number of periods in which the avalanche multiplication has occurred among a plurality of periods of the standby state by using the control signal and a signal corresponding to an output of the photodiode.
    Type: Application
    Filed: January 23, 2020
    Publication date: July 30, 2020
    Inventor: Kazuhiro Morimoto
  • Publication number: 20200223440
    Abstract: A lane change assist apparatus comprises a standby operation device provided on a turn signal lever. The standby operation device outputs a state change request when the standby operation device is operated. The lane change assist apparatus changes its state from a non-standby state to a standby state in response to receiving the state change request. The lane change assist apparatus executes a lane change assist control when a state thereof has been changed to the standby state and receives the lane change assist request.
    Type: Application
    Filed: January 13, 2020
    Publication date: July 16, 2020
    Applicant: Toyota Jidosha Kabushiki Kaisha
    Inventors: Kentaro Takahashi, Kazuhiro Morimoto, Masaaki Honda
  • Publication number: 20200058808
    Abstract: A semiconductor substrate has a first surface and a second surface which is opposite to the first surface. A photoelectric conversion portion has a PN junction configured with first and second semiconductor regions of different conductivity types. A buried portion is buried in the semiconductor substrate and includes an electrode and a dielectric member located between the electrode and the semiconductor substrate and in contact with the second semiconductor region. The second semiconductor region is located in a position deeper than the first semiconductor region. The buried portion is located to extend from a first surface to a position deeper than the first semiconductor region. Electric potentials are supplied to the first semiconductor region, the second semiconductor region, and the electrode in such a manner that an inversion layer occurring between the electrode and the second semiconductor region and the first semiconductor region are in contact with each other.
    Type: Application
    Filed: October 24, 2019
    Publication date: February 20, 2020
    Inventors: Kazuhiro Morimoto, Hajime Ikeda, Junji Iwata
  • Publication number: 20200052143
    Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Inventors: Kazuhiro Morimoto, Mahito Shinohara
  • Patent number: 10497822
    Abstract: An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: December 3, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiro Morimoto, Mahito Shinohara
  • Patent number: 10497818
    Abstract: A semiconductor substrate has a first surface and a second surface which is opposite to the first surface. A photoelectric conversion portion has a PN junction configured with first and second semiconductor regions of different conductivity types. A buried portion is buried in the semiconductor substrate and includes an electrode and a dielectric member located between the electrode and the semiconductor substrate and in contact with the second semiconductor region. The second semiconductor region is located in a position deeper than the first semiconductor region. The buried portion is located to extend from a first surface to a position deeper than the first semiconductor region. Electric potentials are supplied to the first semiconductor region, the second semiconductor region, and the electrode in such a manner that an inversion layer occurring between the electrode and the second semiconductor region and the first semiconductor region are in contact with each other.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: December 3, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiro Morimoto, Hajime Ikeda, Junji Iwata
  • Patent number: 10283651
    Abstract: A photodetection device includes a semiconductor substrate; and a pixel including a first semiconductor region having signal charges as majority carriers, and an electrode disposed on the semiconductor substrate with a dielectric member interposed therebetween. The pixel is configured to detect a signal based on avalanche-amplified electric charges. A quenching circuit configured to suppress a current generated by the avalanche amplification is connected to the first semiconductor region. A second semiconductor region of a conductive type opposite that of the first semiconductor region is disposed under the electrode and in a front surface of the semiconductor substrate. When a predetermined potential is supplied to the electrode, an inversion layer is formed in the second semiconductor region, and the inversion layer is electrically connected to the first semiconductor region.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: May 7, 2019
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiro Morimoto, Hajime Ikeda, Junji Iwata
  • Patent number: 10142574
    Abstract: An image device. While holding electric charges generated at a photoelectric conversion portion in a first period, a first charge holding portion holds electric charges generated at the photoelectric conversion portion in a second period which is a period that does not succeed the first period and which is different in length from the first period, and a second charge holding portion holds electric charges generated at the photoelectric conversion portion in a third period which is a period that does not overlap the first period and the second period.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: November 27, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuhiro Morimoto, Masahiro Kobayashi, Kazunari Kawabata, Taro Kato, Hiroshi Sekine