Abstract: PROBLEM The object is to provide a prevention/treatment means for cancer, by controlling expression/function of a target molecule different from a conventional one, as a novel method in the molecularly-targeted treatment method for a cancer. In addition, provided is a screening means for a substance having prevention/treatment activity for a cancer, using the above target molecule. Moreover, provided is a simple and rapid means for examining a cancer using the detection of the above target molecule. SOLUTION According to one aspect of the present invention, there is provided a cell proliferation inhibitor or a cell adhesion inhibitor for a cancer cell, containing an antibody to a protein containing the same or substantially the same amino acid sequence as the amino acid sequence represented by SEQ ID No: 2 or a partial peptide thereof.

Abstract: An object of present invention is to provide a complete human anti-human TfR antibody, which specifically recognizes human TfR, inhibits the survival or growth of cancer cells that highly express TfR, and has no immunogenicity to humans. The present invention provides an antibody which specifically reacts with human TfR, wherein the antibody comprises any one of the amino acid sequences shown in SEQ ID NOS: 1-3, 7-9, 13-15, 19-21, 25-27, 31-33, 37-39, 43-45, 49-51, 55-57, 61-63, 67-69, 73-75, 79-81, 85-87, 91-93, 97-99, 103-105, 109-111, and 115-117, as each of a heavy chain first complementarity determining region (VH CDR1), a heavy chain second complementarity determining region (VH CDR2), and a heavy chain third complementarity determining region (VH CDR3).

Abstract: A power semiconductor device module includes: a base plate; an insulating substrate mounted on the base plate; and a diode chip mounted on the insulating substrate, wherein the insulating substrate has an upper surface electrode layer disposed on an upper main surface and a lower surface electrode layer disposed on a lower main surface, the diode chip is joined onto the upper surface electrode layer, the lower surface electrode layer is joined onto the upper main surface of the base plate, and a thermal resistance reducing section that reduces thermal resistance is provided in lower surface electrode layer or the base plate of a portion corresponding to a place immediately below the diode chip.

Abstract: A power semiconductor device module includes: a base plate; an insulating substrate mounted on the base plate; and a diode chip mounted on the insulating substrate, wherein the insulating substrate has an upper surface electrode layer disposed on an upper main surface and a lower surface electrode layer disposed on a lower main surface, the diode chip is joined onto the upper surface electrode layer, the lower surface electrode layer is joined onto the upper main surface of the base plate, and a thermal resistance reducing section that reduces thermal resistance is provided in lower surface electrode layer or the base plate of a portion corresponding to a place immediately below the diode chip.

Abstract: Provided is a preventive, progression inhibitor or remedy for a disease one of the causes of which is the activation of the P13K/AKT signaling pathway or vice versa. A phosphorylation-inhibiting and/or dephosphorylating agent, which has an effect of inhibiting the phosphorylation at least at one of the phosphorylation sites of PTEN protein selected from the group consisting of T382, T383 and S380 and/or an effect of dephosphorylating the same, is prepared. Alternatively, a phosphorylation-inhibiting or dephosphorylating agent for PTEN is screened by a method comprising a step for confirming an ability of a test substance to inhibit the phosphorylation at least at one of the phosphorylation sites of PTEN protein selected from the group consisting of T382, T383 and S380 or a dephosphorylation ability thereof. Then, a substance having an effect opposite to the inhibition of PTEN phosphorylation or dephosphorylation thereof, e.g.

Abstract: It is intended to clarify a molecule which is available as a target in treating or diagnosing cancer and utilize the molecule in the medical field or the research field. By treating IgSF4, which has been identified as a molecule specifically expressed in lung cancer cells, with an antibody, and ADCC activity is exerted. Based on this finding, an anti-IgSF4 antibody is provided as a means efficacious in treating cancer, etc.

Abstract: PROBLEM Provided is a prevention/treatment means for cancer, by controlling expression/function of a target molecule different from a conventional one, as a novel method in the molecularly-targeted treatment method for a cancer. In addition, provided is a screening means for a substance having prevention/treatment activity for cancer, using the above target molecule. SOLUTION According to one aspect of the present invention, there is provided a cell adhesion inhibitor for a cancer cell, containing an antibody to a protein containing the same or substantially the same amino acid sequence as the amino acid sequence, represented by SEQ ID No: 2 or represented by SEQ ID No: 4 or represented by SEQ ID No: 6 or a partial peptide thereof.

Abstract: It is intended to clarify a molecule which is available as a target in treating or diagnosing cancer and utilize the molecule in the medical field or the research field. By treating IgSF4, which has been identified as a molecule specifically expressed in lung cancer cells, with an antibody, and ADCC activity is exerted. Based on this finding, an anti-IgSF4 antibody is provided as a means efficacious in treating cancer, etc.

Abstract: It is intended to clarify a molecule which is available as a target in treating or diagnosing cancer and utilize the molecule in the medical field or the research field. By treating IgSF4, which has been identified as a molecule specifically expressed in lung cancer cells, with an antibody, and ADCC activity is exerted. Based on this finding, an anti-IgSF4 antibody is provided as a means efficacious in treating cancer, etc.

Abstract: In order to reduce a turn-on time of a power switching semiconductor device at a low cost, a first main electrode divided into a plurality of segments forming segment rows of a multi-concentric circle and a control electrode surrounding the segments are formed on a front major surface of a semiconductor substrate, and a second electrode is formed on a rear major surface thereof, and a turn-on operation is performed between the first main electrode and the second main electrode with a control signal inputted from the control electrode, specifying a relationship between a width of a segment and a distance between adjacent segments, and others.

Abstract: A semiconductor device having a supporting member that reduces a resonance phenomenon. A pair of reinforcing members is fixed on a gate drive substrate with spacers interposed there between and upright portions of the pair of reinforcing members are fastened with screws on a side wall of a cathode flange. A spacer is fixed on the gate drive substrate and a projection of the spacer is inserted in an engaging member fixed on the bottom of the cathode fin electrode and thus fixed on the bottom of the cathode fin electrode. The pair of upright portions as the first and second supporting points and the projection of the spacer as the third supporting point stably support the gate drive substrate on the cathode fin electrode without freedom of rotation at the three positions arranged to surround an opening.

Abstract: An object is to provide a semiconductor device which is free from such voltage oscillation as may cause malfunction of peripheral equipment. In a semiconductor device having a pin structure, the impurity concentration gradient in an n+ layer (103) serving as a buffer layer is set equal to or less than 2×1018cm−4. Then, when a reverse bias voltage is applied and a depletion layer reaches the n+ layer (103), the expansion of the depletion layer is prevented from rapidly stopping and the voltage oscillation can be suppressed.

Abstract: The present invention relates to a reverse conducting thyristor device. It aims at preventing heat generated by power loss from filling end field protective rubber and at simplifying a sheath storing a semiconductor substrate. In a reverse conducting thyristor device according to this invention, a self-extinguishing thyristor region is arranged on an inner region of the semiconductor substrate, a reverse conducting diode region whose outer periphery is completely enclosed with an isolation region is arranged on its outer region by at least one, and an external takeout gate electrode region is further arranged on the outermost peripheral region of the semiconductor substrate on the outer part thereof. Thus, a gate electrode provided on a surface of a gate part layer of the self-extinguishing thyristor region is connected with an external takeout gate electrode formed along the outermost periphery of the substrate through a gate wiring pattern formed on a surface of a connecting region.

Abstract: In the present invention, a protective cover is provided with, a base bottom portion and a cover portion which is disposed in the base bottom portion through a hinge. The protective cover can be attached to a connector so as to be fitted with a through-lock portion of the connector and the cover portion is then closed. The base bottom portion is formed in a gutter-shape and the rear end side of the base bottom portion is partially closed by a closing portion. In the present invention, a protective cover is also provided with, a cylindrical cover main body to be fitted with a connector, and a pair of opening-and-closing members disposed on the cover main body through hinges. The protective cover further includes securing holes for securing the opening-and-closing members to securing projections disposed on the cover main body, and securing pawls and securing frames for engaging the opening-and-closing members with each other.

Abstract: To make it possible to control turn-off operation even after switch over to transistor operation after commutation of the main current from cathode electrode to gate electrode in turn-off operation, a semiconductor device according to the invention comprises a first electrode, a first region of first conduction type provided on the first electrode, a second region of second conduction type provided on the first region, a third region and a fourth region of first conduction type respectively provided on the second region with a predetermined distance from each other to allow formation of a channel region on the second region, a fifth region of second conduction type provided on the third region, a second electrode provided on the fifth region, a gate electrode established in contact with the fourth region and a control electrode provided on a separate region between the third and fourth regions on the second region to control the channel region through an insulation layer.

Abstract: To suppress spike voltage generated at turn-off operation, a semiconductor device according to the invention comprises a first region composed of a first conductor, a second region composed of a second conductor formed on top of the first region, a third region composed of the first conductor formed on top of the second region and a fourth region composed of the second conductor formed on top of the third region. The second region is comprised of a depletion-layer forming auxiliary layer having a short lifetime and formed in the vicinity of the third region, a tail-current suppression layer having a shorter lifetime than that of the depletion-layer forming auxiliary layer and formed in the vicinity of the first region and a depletion-layer forming suppression layer having a longer lifetime than that of the depletion-layer forming auxiliary layer and formed between the depletion-layer forming auxiliary layer and the tail-current suppression layer.

Abstract: To make it possible to control turn-off operation even after switch over to transistor operation after commutation of the main current from cathode electrode to gate electrode in turn-off operation, a semiconductor device according to the invention comprises a first electrode, a first region of first conduction type provided on the first electrode, a second region of second conduction type provided on the first region, a third region and a fourth region of first conduction type respectively provided on the second region with a predetermined distance from each other to allow formation of a channel region on the second region, a fifth region of second conduction type provided on the third region, a second electrode provided on the fifth region, a gate electrode established in contact with the fourth region and a control electrode provided on a separate region between the third and fourth regions on the second region to control the channel region through an insulation layer.

Abstract: An object is to suppress resonance phenomenon. A pair of reinforcing members (18) are fixed on a gate drive substrate (7) with spacers (37) interposed therebetween and upright portions (40) of the pair of reinforcing members (18) are fastened with screws on a side wall of a cathode flange. A spacer (118) is fixed on the gate drive substrate (7) and a projection (118a) of the spacer (118) is inserted in an engaging member (119) fixed on the bottom of the cathode fin electrode (5) and thus fixed on the bottom of the cathode fin electrode (5). The pair of upright portions (40) as the first and second supporting points and the projection (118a) as the third supporting point stably support the gate drive substrate (7) on the cathode fin electrode (5) without freedom of rotation at the three positions arranged to surround an opening (49).

Abstract: In the present invention, a protective cover is provided with, a base bottom portion and a cover portion which is disposed in the base bottom portion through a hinge. The protective cover can be attached to a connector so as to be fitted with a through-lock portion of the connector and the cover portion is then closed. The base bottom portion is formed in a gutter-shape and the rear end side of the base bottom portion is partially closed by a closing portion.

Abstract: A meter is mounted to an instrument panel. The meter has an engaging portion in the form of a projection-like rotation shaft and projections located on the side walls of the meter. The instrument panel has a support groove and guide grooves. The meter is inserted into the instrument panel so that the projection-like rotation portion engages with the support groove of the panel. The meter is rotated about the projection-like rotation portion while the projections on the side wall of the meter engage with the guide grooves of the instrument panel.