Abstract: A storage device includes a first electrode, a second electrode, and a storage layer. The second electrode is disposed to oppose the first electrode. The storage layer is provided between the first electrode and the second electrode, and includes one or more chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S), transition metal, and oxygen. The storage layer has a non-linear resistance characteristic, and the storage layer is caused to be in a low-resistance state by setting an application voltage to be equal to or higher than a predetermined threshold voltage and is caused to be in a high-resistance state by setting the application voltage to be lower than the predetermined threshold voltage to thereby have a rectification characteristic.

Abstract: A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.

Abstract: Provided are a sputtering target that makes it possible to form a chalcogenide material film with enhanced heat resistance, a method of manufacturing the sputtering target, and a memory device manufacturing method. The sputtering target includes an alloy containing a first component containing arsenic and selenium and a second component containing at least one of boron and carbon.

Abstract: A control system of performing an analysis in a specific space comprising circuitry configured to receive image data corresponding to captured image captured and transmitted from an image capturing device, store, in a memory, the received image data and coordinates of a movable object that indicate a position of the movable object included in the image data in association with each other, the movable object being one or more movable objects, in response to displaying an image generated from the stored image data on a display, receive an input for setting a specific closed region in the image displayed on the display, and measure the movable object within the specific closed region in the image based on coordinates of the specific closed region set by the received input, and the stored coordinates of the movable object.

Abstract: A switch device includes: a first electrode; a second electrode opposed to the first electrode; and a switch layer provided between the first electrode and the second electrode, and the switch layer includes one or more kinds of chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S) and one or more kinds of first elements selected from phosphorus (P) and arsenic (As), and further includes one or both of one or more kinds of second elements selected from boron (B) and carbon (C) and one or more kinds of third elements selected from aluminum (Al), gallium (Ga), and indium (In).

Abstract: There is provided a selection device that includes a first electrode, a second electrode opposed to the first electrode, a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si), and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.

Abstract: A storage apparatus includes a plurality of first wiring layers extending in one direction, a plurality of second wiring layers extending in another direction, and a plurality of memory cells provided in respective opposing regions in which the plurality of first wiring layers and the plurality of second wiring layers are opposed to each other. The plurality of memory cells each includes a selector element layer, a storage element layer, and an intermediate electrode layer provided between the selector element layer and the storage element layer. One or more of the selector element layer, the storage element layer, and the intermediate electrode layer is a common layer that is common between the plurality of memory cells, in which the plurality of memory cells is adjacent to each other and extends in the one direction or the other direction. The intermediate electrode layer includes a nonlinear resistive material.

Abstract: Provided is a circuit element that includes paired inert electrodes, and a switch layer provided between the paired inert electrodes, that functions as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

Abstract: An information processing apparatus includes a partial image generator configured to generate a partial image having a point-of-interest designated by a user, from a 360-degree image, a user interface (UI) unit configured to receive an indication of the point-of-interest via a UI screen for displaying the partial image, and a point-of-interest registering unit configured to register the point-of-interest, in response to a request from the user via the UI screen. The information processing apparatus also includes an interpolation line calculator configured to calculate an interpolation line for interpolating between a most recently registered point-of-interest and a current point-of-interest, and an interpolation line registering unit configured to register an interpolation line between the designated point-of-interest and a point-of-interest designated immediately prior to the designated point-of-interest.

Abstract: A selective device includes a first electrode, a second electrode, a switch device, and a non-linear resistive device. The second electrode is disposed to face the first electrode. The switch device is provided between the first electrode and the second electrode. The non-linear resistive device contains one or more of boron (B), silicon (Si), and carbon (C). The non-linear resistive device is coupled to the switch device in series.

Abstract: A switching device according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a switching layer provided between the first electrode and the second electrode. The switching layer includes at least one chalcogen element selected from sulfur (S), selenium (Se), and tellurium (Te). At least one of the first electrode or the second electrode includes carbon (C) and, as an additive element, at least one of germanium (Ge), phosphorus (P), or arsenic (As).

Abstract: A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.

Abstract: There are provided a memory device and a memory unit that make it possible to improve retention property of a resistance value in low-current writing. The memory device of the technology includes a first electrode, a memory layer, and a second electrode in order, in which the memory layer includes an ion source layer containing one or more transition metal elements selected from group 4, group 5, and group 6 in periodic table, one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or both of boron (B) and carbon (C), and a resistance change layer having resistance that is varied by voltage application to the first electrode and the second electrode.

Abstract: A storage device includes a first electrode, a second electrode, and a storage layer. The second electrode is disposed to oppose the first electrode. The storage layer is provided between the first electrode and the second electrode, and includes one or more chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S), transition metal, and oxygen. The storage layer has a non-linear resistance characteristic, and the storage layer is caused to be in a low-resistance state by setting an application voltage to be equal to or higher than a predetermined threshold voltage and is caused to be in a high-resistance state by setting the application voltage to be lower than the predetermined threshold voltage to thereby have a rectification characteristic.

Abstract: A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.

Abstract: A control system of performing an analysis in a specific space comprising circuitry configured to receive image data corresponding to captured image captured and transmitted from an image capturing device, store, in a memory, the received image data and coordinates of a movable object that indicate a position of the movable object included in the image data in association with each other, the movable object being one or more movable objects, in response to displaying an image generated from the stored image data on a display, receive an input for setting a specific closed region in the image displayed on the display, and measure the movable object within the specific closed region in the image based on coordinates of the specific closed region set by the received input, and the stored coordinates of the movable object.

Abstract: A selection device according to an embodiment of the present disclosure includes: a first electrode; a second electrode opposed to the first electrode; a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si); and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.

Abstract: A storage apparatus according to an embodiment of the present disclosure includes a plurality of first wiring layers extending in one direction, a plurality of second wiring layers extending in another direction, and a plurality of memory cells provided in respective opposing regions in which the plurality of first wiring layers and the plurality of second wiring layers are opposed to each other. The plurality of memory cells each includes a selector element layer, a storage element layer, and an intermediate electrode layer provided between the selector element layer and the storage element layer. One or more of the selector element layer, the storage element layer, and the intermediate electrode layer is a common layer that is common between the plurality of memory cells, in which the plurality of memory cells is adjacent to each other and extends in the one direction or the other direction. The intermediate electrode layer includes a nonlinear resistive material.

Abstract: A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch layer includes a chalcogen element. The switch device further includes a diffusion suppressing layer that is in contact with at least a portion of a surface of the switch layer, and suppresses diffusion of oxygen into the switch layer.

Abstract: There are provided a memory device and a memory unit that make it possible to improve retention property of a resistance value in low-current writing. The memory device of the technology includes a first electrode, a memory layer, and a second electrode in order, in which the memory layer includes an ion source layer containing one or more transition metal elements selected from group 4, group 5, and group 6 in periodic table, one or more chalcogen elements selected from tellurium (Te), sulfur (S), and selenium (Se), and one or both of boron (B) and carbon (C), and a resistance change layer having resistance that is varied by voltage application to the first electrode and the second electrode.