Patents by Inventor Kazuhiro Shimizu

Kazuhiro Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11938946
    Abstract: To provide a lane shape recognition system and a lane shape recognition method which can determine an effective range of the approximated curve corresponding to the lane shape. A lane shape recognition system and a lane shape recognition method detects relative positions of a series of marks or objects which are continuously arranged in front of an own vehicle, with respect to the own vehicle; calculates a curve which approximates the relative positions of the series of marks or objects with respect to the own vehicle; and when a plurality of curves are calculated, mutually compare shapes of plurality of curves and determines the curves corresponding to the lane shape and the effective range of the curves.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: March 26, 2024
    Assignee: Mitsubishi Electric Corporation
    Inventors: Toshihide Satake, Fumiaki Takagi, Yuji Shimizu, Kazuhiro Nishiwaki
  • Publication number: 20240094349
    Abstract: A light detector according to one embodiment, includes a substrate. The substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. The insulating layer is located on the first semiconductor layer. The second semiconductor layer is located on the insulating layer. The second semiconductor layer includes a photoelectric conversion part. The photoelectric conversion part includes a first semiconductor region and a second semiconductor region. The substrate includes a void and a trench. The void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. The trench surrounds the photoelectric conversion part. A lower end of the trench is positioned in the second semiconductor layer. The photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.
    Type: Application
    Filed: February 15, 2023
    Publication date: March 21, 2024
    Inventors: Keita SASAKI, Mariko SHIMIZU, Kazuhiro SUZUKI
  • Publication number: 20240097028
    Abstract: A semiconductor device includes an n-type semiconductor layer, a p-type drift region formed in a surface layer portion of the semiconductor layer, an n-type body region formed in the surface layer portion of the semiconductor layer, a p-type drain region formed in a surface layer portion of the drift region, a p-type source region formed in a surface layer portion of the body region, a gate insulating film formed on a surface of the semiconductor layer, and a polysilicon gate formed on the gate insulating film, wherein a region extending from the source region to a side edge of the drift region is a channel region, and wherein the polysilicon gate includes a p-type first portion facing at least a portion of the channel region, and an n-type second portion facing at least a portion of the drift region.
    Type: Application
    Filed: September 1, 2023
    Publication date: March 21, 2024
    Applicant: ROHM CO., LTD.
    Inventors: Kazuhiro TAMURA, Naoki IZUMI, Yusuke SHIMIZU
  • Patent number: 11922523
    Abstract: An information processing device includes a processor configured to: acquire renewable power generation information from a renewable energy power generation server; acquire at least one of hydrogen power generation information from a hydrogen power generation server and fuel cell information; acquire grid power generation information from a grid power generation server; acquire electric power information from each of a plurality of consumer facilities in a predetermined area, the electric power information being regarding an amount of electric power consumed by the consumer facility; and generate proposal information including information on a type of electric power supplied to a predetermined consumer facility based on at least one of the renewable power generation information, the hydrogen power generation information, and the fuel cell information, the grid power generation information, and a plurality of pieces of the electric power information, and output the proposal information to the predetermined con
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: March 5, 2024
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato Ehara, Kazuhiro Shimizu, Satoshi Tanabe, Nanae Takada, Naohiro Seo
  • Publication number: 20240072191
    Abstract: A light detector includes a semiconductor layer and a light-receiving element. The semiconductor layer is of a first conductivity type. The light-receiving element includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is of a second conductivity type. The second semiconductor region is located between the first semiconductor region and the semiconductor layer. The second semiconductor region is of the first conductivity type and contacts the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the semiconductor layer. The third semiconductor region is of the second conductivity type. The fourth semiconductor region is located between the third semiconductor region and the semiconductor layer.
    Type: Application
    Filed: February 24, 2023
    Publication date: February 29, 2024
    Inventors: Mariko SHIMIZU, Kazuhiro SUZUKI, Ikuo FUJIWARA, Ryoma KANEKO, Keita SASAKI
  • Patent number: 11912989
    Abstract: An objective of the present invention is to provide target tissue-specific antigen-binding molecules, antigen-binding molecules whose antigen-binding activity varies depending on the concentration of an unnatural compound, libraries comprising a plurality of the antigen-binding molecules which are different from one another, pharmaceutical compositions comprising the antigen-binding molecules, methods of screening for the antigen-binding molecules, and methods for producing the antigen-binding molecules. The present inventors created antigen-binding domains whose antigen-binding activity varies depending on the concentration of a small molecule compound or antigen-binding molecules containing an antigen-binding domain, and libraries comprising a plurality of the antigen-binding domains which are different from one another or antigen-binding domains, and demonstrated that the above-noted objective could be achieved by using the libraries.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: February 27, 2024
    Assignee: Chugai Seiyaku Kabushiki Kaisha
    Inventors: Tomoyuki Igawa, Shigero Tamba, Shun Shimizu, Kanako Tatsumi, Shojiro Kadono, Hiroki Kawauchi, Kazuhiro Ohara, Masayuki Matsushita, Takashi Emura, Masaki Kamimura
  • Publication number: 20240006476
    Abstract: Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.
    Type: Application
    Filed: September 12, 2023
    Publication date: January 4, 2024
    Applicant: Mitsubishi Electric Corporation
    Inventors: Toshihiro IMASAKA, Kazuhiro SHIMIZU, Manabu YOSHINO, Yuji KAWASAKI
  • Patent number: 11824085
    Abstract: Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: November 21, 2023
    Assignee: Mitsubishi Electric Corporation
    Inventors: Toshihiro Imasaka, Kazuhiro Shimizu, Manabu Yoshino, Yuji Kawasaki
  • Patent number: 11552166
    Abstract: A high withstand voltage isolation region has a first diffusion layer of a second conductivity type formed on a principal surface of a semiconductor substrate. The high withstand voltage MOS has a second diffusion layer of the second conductivity type formed on the principal surface of the semiconductor substrate. A low side circuit region has a third diffusion layer of a first conductivity type formed on the principal surface of the semiconductor substrate. A fourth diffusion layer of the first conductivity type having a higher impurity concentration than the semiconductor substrate is formed on the principal surface of the semiconductor substrate exposed between the first diffusion layer and the second diffusion layer. The fourth diffusion layer extends from the high side circuit region to the low side circuit region and does not contact the third diffusion layer.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: January 10, 2023
    Assignee: Mitsubishi Electric Corporation
    Inventors: Manabu Yoshino, Kazuhiro Shimizu
  • Publication number: 20220223889
    Abstract: An information processing device includes a processor that: acquires movement information related to a movement of a moving body from the moving body including a fuel cell using hydrogen fuel as a power source of the moving body, a storage unit for storing hot water discharged from the fuel cell, and a tub for using the hot water discharged from the storage unit; acquires destination information related to a destination of the moving body from the moving body or a terminal of a user who uses the moving body; and acquires set values of a water amount and a water temperature of the hot water stored in the storage unit from the moving body, generates schedule information related to traveling of the moving body based on the movement information, the destination information, and the set values, and outputs the schedule information to the moving body.
    Type: Application
    Filed: November 30, 2021
    Publication date: July 14, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220224112
    Abstract: An information processing device includes a processor configured to: acquire renewable power generation information from a renewable energy power generation server; acquire at least one of hydrogen power generation information from a hydrogen power generation server and fuel cell information; acquire grid power generation information from a grid power generation server; acquire electric power information from each of a plurality of consumer facilities in a predetermined area, the electric power information being regarding an amount of electric power consumed by the consumer facility; and generate proposal information including information on a type of electric power supplied to a predetermined consumer facility based on at least one of the renewable power generation information, the hydrogen power generation information, and the fuel cell information, the grid power generation information, and a plurality of pieces of the electric power information, and output the proposal information to the predetermined con
    Type: Application
    Filed: November 29, 2021
    Publication date: July 14, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Patent number: 11387231
    Abstract: The semiconductor device that supplies a charging current to a bootstrap capacitor includes a semiconductor layer, an N+-type diffusion region, an N-type diffusion region, a P+-type diffusion region, a P-type diffusion region, an N+-type diffusion region, a source electrode, a drain electrode, a back gate electrode, and a gate electrode. The N+-type diffusion region and the N-type diffusion region are electrically connected to a first electrode of the bootstrap capacitor. The N+-type diffusion region is supplied with a power supply voltage. The source electrode is connected to the N+-type diffusion region and is supplied with the power supply voltage. The back gate electrode is connected to a region separated from the N+-type diffusion region and is grounded. The breakdown voltage between the source electrode and the back gate electrode is greater than the power supply voltage.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: July 12, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazuhiro Shimizu, Yuji Kawasaki, Toshihiro Imasaka, Manabu Yoshino
  • Publication number: 20220194259
    Abstract: An information processing device includes a processor having hardware. The processor is configured to create, upon acquiring a charging signal indicating that an electric moving vehicle autonomously moving by power stored in a battery requires charging of the battery, or determining that the charging is required, based on a predetermined task additionally set to the electric moving vehicle, schedule information including a travel schedule that enables the electric moving vehicle to travel to a charging station where the battery is to be charged and to perform the task, and output the schedule information to the electric moving vehicle.
    Type: Application
    Filed: October 8, 2021
    Publication date: June 23, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220187080
    Abstract: A processor acquires path information and stores the path information in a storage unit, determines whether or not the moving body is in a lost state based on the path information from the storage unit, and generates and outputs route information that guides the moving body to a predetermined place when the moving body is determined to be in the lost state. The processor acquires the path information as an input parameter, inputs the path information to a determination learning model, and outputs whether or not the moving body is in the lost state as an output parameter. The model is a learning model generated by machine learning using an input and output data set in which path information is used as an input parameter for learning and a determination result of whether or not path information is in the lost state is used as an output parameter for learning.
    Type: Application
    Filed: September 15, 2021
    Publication date: June 16, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220188730
    Abstract: An information processing device includes a processor including hardware. The processor: predicts a power generation amount of a next day and derive a predicted value of the power generation amount based on the weather information and the power generation information in the solar power generation facility; predicts a demand amount of electric power to be used in the predetermined area on the next day and derives a predicted value of the demand amount based on the weather information in the predetermined area; and outputs a request signal for requesting distribution of a distributed item from an outside of the predetermined area to the predetermined area based on the predicted value of the power generation amount and the predicted value of the demand amount.
    Type: Application
    Filed: September 13, 2021
    Publication date: June 16, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220185318
    Abstract: An information processing device is provided with a processor including hardware. The processor is configured to: acquire image information acquired by capturing an image of an item collected by a moving body and store the image information in a storage unit; determine whether the item in the image information read from the storage unit is waste; when the processor determines that the item is not waste, output an instruction signal for keeping the item in the moving body and output information related to the item based on the image information; and when user identification information associated with the information related to the item exists in the storage unit, output an instruction signal for moving to a predetermined location.
    Type: Application
    Filed: September 15, 2021
    Publication date: June 16, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220119652
    Abstract: There is provided a decorative sheet composed of a multilayer structure having an intermediate layer and a protective layer on a surface of a cork sheet, wherein a decolorized cork layer is formed on the surface of the cork sheet in contact with the intermediate layer; the intermediate layer is a coated film formed by drying an aqueous emulsion; the protective layer comprises an ultraviolet absorbing layer made of a resin composition containing an ultraviolet absorbing agent; and the surface of the protective layer is a design surface. Such a decorative sheet has excellent light resistance and fastness to rubbing, and also maintains an appearance peculiar to cork.
    Type: Application
    Filed: October 15, 2021
    Publication date: April 21, 2022
    Applicant: UCHIYAMA MANUFACTURING CORP.
    Inventors: Mari KAWATA, Tomohisa YAMAMOTO, Kazuhiro SHIMIZU, Yuki NISHIYAMA
  • Publication number: 20210226003
    Abstract: A high withstand voltage isolation region has a first diffusion layer of a second conductivity type formed on a principal surface of a semiconductor substrate. The high withstand voltage MOS has a second diffusion layer of the second conductivity type formed on the principal surface of the semiconductor substrate. A low side circuit region has a third diffusion layer of a first conductivity type formed on the principal surface of the semiconductor substrate. A fourth diffusion layer of the first conductivity type having a higher impurity concentration than the semiconductor substrate is formed on the principal surface of the semiconductor substrate exposed between the first diffusion layer and the second diffusion layer. The fourth diffusion layer extends from the high side circuit region to the low side circuit region and does not contact the third diffusion layer.
    Type: Application
    Filed: August 10, 2020
    Publication date: July 22, 2021
    Applicant: Mitsubishi Electric Corporation
    Inventors: Manabu YOSHINO, Kazuhiro SHIMIZU
  • Publication number: 20210202694
    Abstract: Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.
    Type: Application
    Filed: October 20, 2020
    Publication date: July 1, 2021
    Applicant: Mitsubishi Electric Corporation
    Inventors: Toshihiro IMASAKA, Kazuhiro SHIMIZU, Manabu YOSHINO, Yuji KAWASAKI
  • Patent number: 11041572
    Abstract: An annular valve in which the shape of a sealing surface of a valve body is optimized thus suppressing the occurrence of pressure loss in gas on the periphery of the sealing surface and extending the service life of the annular valve.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: June 22, 2021
    Inventors: Masaru Fujinami, Hirofumi Himei, Tsukasa Suzuki, Kazuhiro Shimizu, Shuji Ishihara, Kazuki Takizawa, Kouichi Takemoto