Patents by Inventor Kazuhiro Shimizu

Kazuhiro Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12138924
    Abstract: A liquid ejection head includes ejection orifices for ejecting liquid, common liquid chambers connected to the ejection orifices, common flow passages, and pitch conversion flow passages that connects the common flow passages and liquid chambers to each other. The pitch conversion flow passages includes a periphery formed with resin. In a case where a number of pitch conversion flow passages in a group is minimum on a condition that one or more of the pitch conversion flow passages are respectively included in the group, the pitch conversion flow passages have a repeating pattern in which the group is repeatedly arranged. At least one of two pitch conversion flow passages adjoining an m-th pitch conversion flow passage (m is all integers from 1 to n?2, where n is an integer of 3 or more) is one of first to (m+1)-th pitch conversion flow passages.
    Type: Grant
    Filed: October 11, 2023
    Date of Patent: November 12, 2024
    Assignee: Canon Kabushiki Kaisha
    Inventors: Naoko Shimizu, Toru Nakakubo, Kazuhiro Yamada, Atsushi Teranishi, Osamu Kanome
  • Patent number: 12142616
    Abstract: According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: November 12, 2024
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Shimizu, Ikuo Fujiwara, Keita Sasaki, Kazuaki Okamoto, Honam Kwon, Kazuhiro Suzuki
  • Publication number: 20240327573
    Abstract: A polyamic acid manufacturing system for manufacturing a polyamic acid is disclosed using, as raw materials, a first solution in which a polyaddition-type first polymerizable compound is dissolved and a second solution in which a polyaddition-type second polymerizable compound that reacts with the first polymerizable compound through polyaddition is dissolved. The polyamic acid manufacturing system may include: a first supply part for supplying the first solution; a second supply part for supplying the second solution; a first combining part; and a first reaction part, thereby producing a first polymerization solution in which the polyamic acid is dissolved. Further, the polyamic acid manufacturing system may include: a first supply step of supplying the first solution; a second supply step of supplying the second solution; a first combining step; and a first reaction step, thereby producing a first polymerization solution in which the polyamic acid is dissolved.
    Type: Application
    Filed: June 14, 2024
    Publication date: October 3, 2024
    Applicant: KANEKA CORPORATION
    Inventors: Tomoyuki Toyoda, Toshihisa Itoh, Hiroyuki Furutani, Kazuhiro Shimizu, Kiyoshi Yamaguchi
  • Patent number: 12086628
    Abstract: An electronic apparatus includes: a memory which temporarily stores a program of a system; a first processor which executes the program to implement functions of the system; a second processor which detects a face area with a face captured therein from an image captured by an imaging unit; and a third processor which switches between and executes first processing in which, when the face area is detected by the second processor, first information is output, while when the face area is not detected, second information is output, and second processing to output the first information despite detection of the face area by the second processor. When there is no operation input by a user over a certain period of time, the first processor restricts use of at least some of the functions of the system.
    Type: Grant
    Filed: October 6, 2022
    Date of Patent: September 10, 2024
    Assignee: Lenovo (Singapore) Pte. Ltd.
    Inventors: Kazuhiro Kosugi, Masashi Nishio, Eri Shimizu
  • Publication number: 20240262340
    Abstract: There are provided a display system and a vehicle that provide good usability to an occupant. A display system includes: a projection device provided in a vehicle interior of a vehicle and capable of projecting a video in the vehicle interior; a sensor provided in the vehicle to detect a state of the vehicle or an occupant of the vehicle; and a control unit that receives a signal from the sensor to control the projection device. The control unit changes a projection state of the projection device based on the signal from the sensor. By automatically changing the projection state of the projection device, the effort for the occupant to operate the projection device is saved, and the usability of the projection device is improved.
    Type: Application
    Filed: June 2, 2022
    Publication date: August 8, 2024
    Inventors: Hiroyuki NUMAJIRI, Kazuhiro SHIMIZU, Mika KUROSAWA, Hiroshi YOGO, Shoichi TAKAHASHI, Yuta OSHINO, Takuya OZAKI, Hiroki ITO, Jinichi TANABE, Takayoshi ITO
  • Patent number: 12054586
    Abstract: A polyamic acid manufacturing system for manufacturing a polyamic acid is disclosed using, as raw materials, a first solution in which a polyaddition-type first polymerizable compound is dissolved and a second solution in which a polyaddition-type second polymerizable compound that reacts with the first polymerizable compound through polyaddition is dissolved. The polyamic acid manufacturing system may include: a first supply part for supplying the first solution; a second supply part for supplying the second solution; a first combining part; and a first reaction part, thereby producing a first polymerization solution in which the polyamic acid is dissolved. Further, the polyamic acid manufacturing system may include: a first supply step of supplying the first solution; a second supply step of supplying the second solution; a first combining step; and a first reaction step, thereby producing a first polymerization solution in which the polyamic acid is dissolved.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: August 6, 2024
    Assignee: KANEKA CORPORATION
    Inventors: Tomoyuki Toyoda, Toshihisa Itoh, Hiroyuki Furutani, Kazuhiro Shimizu, Kiyoshi Yamaguchi
  • Patent number: 12038710
    Abstract: An image forming apparatus includes first, second, and third acquisition processing portions. The first acquisition processing portion acquires the potential value of a charged area, charged by the charging member, on the image-carrying member. The second acquisition processing portion acquires a state value regarding the state of a surface layer of the image-carrying member based on the potential value of the charged area acquired by the first acquisition processing portion and the current value of a charging current flowing through the charging member during formation of the charged area. The third acquisition processing portion acquires the electrical resistance value of the transfer member based on the state value acquired by the second acquisition processing portion, the voltage value of a transfer voltage applied to the transfer member, and the current value of a transfer current flowing through the charged area in response to application of the transfer voltage.
    Type: Grant
    Filed: October 28, 2022
    Date of Patent: July 16, 2024
    Assignee: KYOCERA Document Solutions Inc.
    Inventors: Ryota Okui, Yoshihiro Yamagishi, Tamotsu Shimizu, Kazuhiro Nakachi, Kazunori Tanaka
  • Patent number: 11922523
    Abstract: An information processing device includes a processor configured to: acquire renewable power generation information from a renewable energy power generation server; acquire at least one of hydrogen power generation information from a hydrogen power generation server and fuel cell information; acquire grid power generation information from a grid power generation server; acquire electric power information from each of a plurality of consumer facilities in a predetermined area, the electric power information being regarding an amount of electric power consumed by the consumer facility; and generate proposal information including information on a type of electric power supplied to a predetermined consumer facility based on at least one of the renewable power generation information, the hydrogen power generation information, and the fuel cell information, the grid power generation information, and a plurality of pieces of the electric power information, and output the proposal information to the predetermined con
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: March 5, 2024
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato Ehara, Kazuhiro Shimizu, Satoshi Tanabe, Nanae Takada, Naohiro Seo
  • Publication number: 20240006476
    Abstract: Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.
    Type: Application
    Filed: September 12, 2023
    Publication date: January 4, 2024
    Applicant: Mitsubishi Electric Corporation
    Inventors: Toshihiro IMASAKA, Kazuhiro SHIMIZU, Manabu YOSHINO, Yuji KAWASAKI
  • Patent number: 11824085
    Abstract: Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: November 21, 2023
    Assignee: Mitsubishi Electric Corporation
    Inventors: Toshihiro Imasaka, Kazuhiro Shimizu, Manabu Yoshino, Yuji Kawasaki
  • Patent number: 11552166
    Abstract: A high withstand voltage isolation region has a first diffusion layer of a second conductivity type formed on a principal surface of a semiconductor substrate. The high withstand voltage MOS has a second diffusion layer of the second conductivity type formed on the principal surface of the semiconductor substrate. A low side circuit region has a third diffusion layer of a first conductivity type formed on the principal surface of the semiconductor substrate. A fourth diffusion layer of the first conductivity type having a higher impurity concentration than the semiconductor substrate is formed on the principal surface of the semiconductor substrate exposed between the first diffusion layer and the second diffusion layer. The fourth diffusion layer extends from the high side circuit region to the low side circuit region and does not contact the third diffusion layer.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: January 10, 2023
    Assignee: Mitsubishi Electric Corporation
    Inventors: Manabu Yoshino, Kazuhiro Shimizu
  • Publication number: 20220223889
    Abstract: An information processing device includes a processor that: acquires movement information related to a movement of a moving body from the moving body including a fuel cell using hydrogen fuel as a power source of the moving body, a storage unit for storing hot water discharged from the fuel cell, and a tub for using the hot water discharged from the storage unit; acquires destination information related to a destination of the moving body from the moving body or a terminal of a user who uses the moving body; and acquires set values of a water amount and a water temperature of the hot water stored in the storage unit from the moving body, generates schedule information related to traveling of the moving body based on the movement information, the destination information, and the set values, and outputs the schedule information to the moving body.
    Type: Application
    Filed: November 30, 2021
    Publication date: July 14, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220224112
    Abstract: An information processing device includes a processor configured to: acquire renewable power generation information from a renewable energy power generation server; acquire at least one of hydrogen power generation information from a hydrogen power generation server and fuel cell information; acquire grid power generation information from a grid power generation server; acquire electric power information from each of a plurality of consumer facilities in a predetermined area, the electric power information being regarding an amount of electric power consumed by the consumer facility; and generate proposal information including information on a type of electric power supplied to a predetermined consumer facility based on at least one of the renewable power generation information, the hydrogen power generation information, and the fuel cell information, the grid power generation information, and a plurality of pieces of the electric power information, and output the proposal information to the predetermined con
    Type: Application
    Filed: November 29, 2021
    Publication date: July 14, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Patent number: 11387231
    Abstract: The semiconductor device that supplies a charging current to a bootstrap capacitor includes a semiconductor layer, an N+-type diffusion region, an N-type diffusion region, a P+-type diffusion region, a P-type diffusion region, an N+-type diffusion region, a source electrode, a drain electrode, a back gate electrode, and a gate electrode. The N+-type diffusion region and the N-type diffusion region are electrically connected to a first electrode of the bootstrap capacitor. The N+-type diffusion region is supplied with a power supply voltage. The source electrode is connected to the N+-type diffusion region and is supplied with the power supply voltage. The back gate electrode is connected to a region separated from the N+-type diffusion region and is grounded. The breakdown voltage between the source electrode and the back gate electrode is greater than the power supply voltage.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: July 12, 2022
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazuhiro Shimizu, Yuji Kawasaki, Toshihiro Imasaka, Manabu Yoshino
  • Publication number: 20220194259
    Abstract: An information processing device includes a processor having hardware. The processor is configured to create, upon acquiring a charging signal indicating that an electric moving vehicle autonomously moving by power stored in a battery requires charging of the battery, or determining that the charging is required, based on a predetermined task additionally set to the electric moving vehicle, schedule information including a travel schedule that enables the electric moving vehicle to travel to a charging station where the battery is to be charged and to perform the task, and output the schedule information to the electric moving vehicle.
    Type: Application
    Filed: October 8, 2021
    Publication date: June 23, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220188730
    Abstract: An information processing device includes a processor including hardware. The processor: predicts a power generation amount of a next day and derive a predicted value of the power generation amount based on the weather information and the power generation information in the solar power generation facility; predicts a demand amount of electric power to be used in the predetermined area on the next day and derives a predicted value of the demand amount based on the weather information in the predetermined area; and outputs a request signal for requesting distribution of a distributed item from an outside of the predetermined area to the predetermined area based on the predicted value of the power generation amount and the predicted value of the demand amount.
    Type: Application
    Filed: September 13, 2021
    Publication date: June 16, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220185318
    Abstract: An information processing device is provided with a processor including hardware. The processor is configured to: acquire image information acquired by capturing an image of an item collected by a moving body and store the image information in a storage unit; determine whether the item in the image information read from the storage unit is waste; when the processor determines that the item is not waste, output an instruction signal for keeping the item in the moving body and output information related to the item based on the image information; and when user identification information associated with the information related to the item exists in the storage unit, output an instruction signal for moving to a predetermined location.
    Type: Application
    Filed: September 15, 2021
    Publication date: June 16, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220187080
    Abstract: A processor acquires path information and stores the path information in a storage unit, determines whether or not the moving body is in a lost state based on the path information from the storage unit, and generates and outputs route information that guides the moving body to a predetermined place when the moving body is determined to be in the lost state. The processor acquires the path information as an input parameter, inputs the path information to a determination learning model, and outputs whether or not the moving body is in the lost state as an output parameter. The model is a learning model generated by machine learning using an input and output data set in which path information is used as an input parameter for learning and a determination result of whether or not path information is in the lost state is used as an output parameter for learning.
    Type: Application
    Filed: September 15, 2021
    Publication date: June 16, 2022
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato EHARA, Kazuhiro SHIMIZU, Satoshi TANABE, Nanae TAKADA, Naohiro SEO
  • Publication number: 20220119652
    Abstract: There is provided a decorative sheet composed of a multilayer structure having an intermediate layer and a protective layer on a surface of a cork sheet, wherein a decolorized cork layer is formed on the surface of the cork sheet in contact with the intermediate layer; the intermediate layer is a coated film formed by drying an aqueous emulsion; the protective layer comprises an ultraviolet absorbing layer made of a resin composition containing an ultraviolet absorbing agent; and the surface of the protective layer is a design surface. Such a decorative sheet has excellent light resistance and fastness to rubbing, and also maintains an appearance peculiar to cork.
    Type: Application
    Filed: October 15, 2021
    Publication date: April 21, 2022
    Applicant: UCHIYAMA MANUFACTURING CORP.
    Inventors: Mari KAWATA, Tomohisa YAMAMOTO, Kazuhiro SHIMIZU, Yuki NISHIYAMA
  • Publication number: 20210226003
    Abstract: A high withstand voltage isolation region has a first diffusion layer of a second conductivity type formed on a principal surface of a semiconductor substrate. The high withstand voltage MOS has a second diffusion layer of the second conductivity type formed on the principal surface of the semiconductor substrate. A low side circuit region has a third diffusion layer of a first conductivity type formed on the principal surface of the semiconductor substrate. A fourth diffusion layer of the first conductivity type having a higher impurity concentration than the semiconductor substrate is formed on the principal surface of the semiconductor substrate exposed between the first diffusion layer and the second diffusion layer. The fourth diffusion layer extends from the high side circuit region to the low side circuit region and does not contact the third diffusion layer.
    Type: Application
    Filed: August 10, 2020
    Publication date: July 22, 2021
    Applicant: Mitsubishi Electric Corporation
    Inventors: Manabu YOSHINO, Kazuhiro SHIMIZU