Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.

Abstract: According to one embodiment, in a semiconductor device, a plurality of first wiring lines is provided in a first insulating film on a semiconductor substrate and is adjacent in a direction parallel to the semiconductor substrate. A second insulating film is provided on the first wiring lines and the first insulating film. A plurality of vias is provided in the second insulating film and is electrically connected to the first wiring lines. A third insulating film is provided on the vias and the second insulating film. Adjacent second wiring lines are provided in the third insulating film and are electrically connected to the vias. A fourth insulating film is provided on a sidewall of each of the adjacent second wiring lines, the sidewalls face each other. A conductive film abuts on the adjacent second wiring lines with the fourth insulating film interposed therebetween.

Abstract: To provide a semiconductor device in which an interval between first wells can be shortened by improving a separation breakdown voltage between the first wells and a method for manufacturing the same.

Abstract: A nonvolatile semiconductor memory device has: a first device isolation region extending in a first direction; a first memory cell that comprises a first control gate extending in a second direction different from the first direction; a second memory cell that comprises a second control gate adjacent to the first control gate across a diffusion layer region; and a first leading electrode connected to the first control gate. A first concave region is formed in the first device isolation region so as to be apart from a side surface of the second control gate. The first leading electrode is formed within the first concave region.

Abstract: To provide a semiconductor device in which an interval between first wells can be shortened by improving a separation breakdown voltage between the first wells and a method for manufacturing the same.

Abstract: A semiconductor light emitting device is disclosed in which a semiconductor multilayer structure including a light emitting layer is formed on a substrate and light is output from the opposite surface of the semiconductor multilayer structure from the substrate. The light output surface is formed with a large number of protrusions in the form of cones or pyramids. To increase the light output efficiency, the angle between the side of each protrusion and the light output surface is set to between 30 and 70 degrees.

Abstract: A semiconductor light emitting device is disclosed in which a semiconductor multilayer structure including a light emitting layer is formed on a substrate and light is output from the opposite surface of the semiconductor multilayer structure from the substrate. The light output surface is formed with a large number of protrusions in the form of cones or pyramids. To increase the light output efficiency, the angle between the side of each protrusion and the light output surface is set to between 30 and 70 degrees.

Abstract: A semiconductor device which has a protective film having a high blocking capacity against contaminating ions and a high shielding effect against an external electric field. The protective film is formed on a surface of the semiconductor device. The protective film consists essentially of an amorphous or polycrystalline silicon carbide which contains at least one element selected from the group consisting of hydrogen, nitrogen, oxygen and a halogen.