Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a mask on a film provided on a substrate, selectively etching the film by applying an ion beam of an inert gas to the film after the forming of the mask, and applying an electron beam to the film after the etching.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

Abstract: According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure.

Abstract: A magnetic element includes a first magnetic layer, a first non-magnetic layer on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer, the third magnetic layer having a side wall layer including a material which is included in the second non-magnetic layer; wherein the material is one of Ru and Pt as a common material to the side wall layer and the second non-magnetic layer.

Abstract: According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a silicon nitride layer on a metal layer, forming a plasma of a gas mixture of carbon oxide and oxygen, and selectively etching the silicon nitride layer with respect to the metal layer by using the plasma of the gas mixture.

Abstract: According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment.

Abstract: According to one embodiment, a manufacturing method of a semiconductor memory device includes the following steps. The method includes forming a first magnetic layer, a second magnetic layer, and an insulating layer therebetween, forming a mask layer on the second magnetic layer, etching the second magnetic layer, the insulating layer, and the first magnetic layer using the mask layer as a mask and forming a magnetic tunnel junction (MTJ) element, and performing oxidation a sidewall of the MTJ element with H2O.

Abstract: According to one embodiment, a semiconductor memory device includes a lower electrode, an MTJ element, a cap layer and an upper electrode. The lower electrode is provided above a semiconductor substrate. The MTJ element is provided above the lower electrode. The cap layer is provided above the MTJ element and is oxygen-free. The upper electrode is connected to the cap layer.

Abstract: According to one embodiment, a magnetic memory device includes a first stack structure including a first magnetic layer, and a first nonmagnetic layer provided on the first magnetic layer, a second stack structure including a second magnetic layer provided on the first nonmagnetic layer, a second nonmagnetic layer provided on the second magnetic layer, and a top conductive layer provided on the second nonmagnetic layer, and a sidewall conductive layer provided on a sidewall of the second stack structure.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.

Abstract: According to one embodiment, a method of manufacturing a magnetic memory device, includes accommodating, in an etching chamber, a substrate with a stacked film including a magnetic layer, etching at least a part of the stacked film in the etching chamber to form a columnar structure, and transferring the substrate with the columnar structure from the etching chamber to a transfer chamber in which a reducing purge gas is supplied.

Abstract: According to one embodiment, a method of manufacturing a magnetic memory device, includes etching at least a part of a stacked film including a magnetic layer, to form a columnar structure, and performing a surface treatment on a side surface of the columnar structure, using a surface treatment gas containing a predetermined element and hydrogen.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

Abstract: According to one embodiment, a magnetic memory includes a transistor having first and second diffusion layers in a semiconductor substrate and a gate electrode between the first and second diffusion layers, a first insulating layer on the semiconductor substrate, the first insulating layer covering the transistor, a first contact plug in the first insulating layer, the first contact plug connected to the first diffusion layer, a second contact plug in the first insulating layer, the second contact plug connected to the second diffusion layer, a magnetoresistive element on the first insulating layer, the magnetoresistive element connected to the first contact plug, an electrode on the magnetoresistive element, and an impurity region in the first insulating layer, the second contact plug, and the electrode.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a first magnetic film containing boron, forming a second magnetic film free from boron, above the first magnetic film. The method further includes selectively etching the second magnetic film with respect to the first magnetic film using plasma of etching gas which contains oxygen and hydrogen and which is free from halogen.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the non-magnetic layer, and patterning the second magnetic layer by a RIE using an etching gas including a noble gas and a hydrocarbon gas.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a magnetoresistive element formed on a semiconductor substrate, a first contact plug which extends through an interlayer dielectric film formed on the semiconductor substrate and immediately below the magnetoresistive element, has a bottom surface in contact with an upper surface of the semiconductor substrate, and is adjacent to the magnetoresistive element, and an insulating film formed between the magnetoresistive element and the first contact plug and on the interlayer dielectric film, wherein the insulating film includes a first region positioned on a side of the interlayer dielectric film, and a second region positioned in the insulating film and on an upper surface of the first region, the insulating film is made of SiN, and the first region is a nitrogen rich film compared to the second region.

Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the first non-magnetic layer, forming a second non-magnetic layer on the second magnetic layer, forming a third magnetic layer on the second non-magnetic layer, patterning the third magnetic layer by a RIE using an etching gas including a noble gas and a nitrogen gas until a surface of the second non-magnetic layer is exposed, and patterning the second non-magnetic layer and the second magnetic layer after patterning of the third magnetic layer.