Abstract: There is provided a method for producing a carbon material, including a carbon generation step of causing carbon dioxide to react with a reducing agent to generate carbon, in which, as the reducing agent, an oxygen-deficient iron oxide represented by Fe3O4-? (where ? is 1 or more and less than 4), which is obtained by reducing magnetite while maintaining a crystal structure, or an oxygen-completely deficient iron (?=4) which is obtained by completely reducing magnetite is used.

Abstract: An electronic pen transmits pen information to a controller corresponding to detection of a touch condition, and thereafter turns ON a connecting switch that disconnects electrical connection between the tip portion and the grip portion of the pen that are provided in a state of being electrically disconnected from each other so as to cause a pen input acceptance state. The controller determines that position detection information is from the electronic pen when the position detection information is received from a position detecting device after the pen information is received from the electronic pen, while the controller determines that position detection information is from a finger when the position detection information is received from the position detecting device without receiving the pen information from the electronic pen.

Abstract: A honeycomb structure body has a honeycomb base body and a pair of electrodes composed of conductive ceramic layers and intermediate layers. The honeycomb base body made of porous ceramics containing SiC is comprised of a cell formation part and an outer peripheral part. The outer peripheral part covers the cell formation part. Each electrode is comprised of a conductive ceramic layer and an intermediate layer. The conductive ceramic layers containing SiC, Si and C are formed at two opposite positions on the outer peripheral part observed from a diameter direction. The intermediate layers containing SiC, Si and C are formed in the outer peripheral part at the parts which face the conductive ceramic layers. The honeycomb structure body satisfies a relationship of 0.5?t/T?1, where “t” indicates the thickness of the intermediate layer and “T” indicates the thickness of the outer peripheral part.

Abstract: An object of the present invention is to perform replacement of parts of a substrate processing apparatus more rapidly than that by the prior art. The present invention is a substrate processing apparatus constituted of a plurality of component parts for performing predetermined processing for a substrate, identification marks being attached to the respective component parts, the apparatus including: a storage unit for storing part information on each of the component parts necessary when placing an order for a component part, in correspondence with the identification mark; an input unit for inputting an identification mark of a component part to be ordered; and a display unit for displaying the part information in the storage unit corresponding to the inputted identification mark.

Abstract: An electronic pen transmits pen information to a controller corresponding to detection of a touch condition, and thereafter turns ON a connecting switch that disconnects electrical connection between the tip portion and the grip portion of the pen that are provided in a state of being electrically disconnected from each other so as to cause a pen input acceptance state. The controller determines that position detection information is from the electronic pen when the position detection information is received from a position detecting device after the pen information is received from the electronic pen, while the controller determines that position detection information is from a finger when the position detection information is received from the position detecting device without receiving the pen information from the electronic pen.

Abstract: An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening 25 at above of a crystal defect region 11 is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.

Abstract: An object of the present invention is to perform replacement of parts of a substrate processing apparatus more rapidly than that by the prior art. The present invention is a substrate processing apparatus constituted of a plurality of component parts for performing predetermined processing for a substrate, identification marks being attached to the respective component parts, the apparatus including: a storage unit for storing part information on each of the component parts necessary when placing an order for a component part, in correspondence with the identification mark; an input unit for inputting an identification mark of a component part to be ordered; and a display unit for displaying the part information in the storage unit corresponding to the inputted identification mark.

Abstract: An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening 25 at above of a crystal defect region 11 is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.

Abstract: An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode 22 made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening 25 at above of a crystal defect region 11 is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.

Abstract: A semiconductor device which can suppress an electronic breakdown. In the semiconductor device, a base electrode is connected to a base region in a base contact region defined on a surface of the base region. An N-type region having the same conductivity type as an emitter region is provided beneath a boundary portion of the base contact region to surround the base contact region. In other words, a PN-type diode constituted by the P-type base region and the N-type region is provided beneath the boundary portion of the base contact region.

Abstract: A base contact section of a planar structure electrically connecting a base electrode to a base region of a bipolar transistor is constructed of a repeating structure in a plan view, in which a high impurity concentration region of the same conductivity type as that of the base region and a region of the reverse conductivity type from that of the base region or low concentration region of the same conductivity type as that of the base region, arranged in an alternately manner starting with a high impurity concentration region of the same conductivity type as that of the base region from an emitter region side. With such a structure, accumulation of minor carriers in the base contact section can be suppressed, a high switching speed can be achieved and reduction in power consumption can be realized.

Abstract: The present invention provides a semiconductor device having a bipolar transistor constructed so as to allow the adjustment of the base input signal voltage that switches on a transistor in which a diffusion region of a different conductivity type from that of the base region is formed at the contact of the base electrode, and to allow the base current to be controlled when a digital transistor is produced. A base electrode connection region 24 of an n+-type is provided to a p-type base region 12, and a zener voltage control diffusion region 25 of a p+-type is provided around the periphery of the base electrode connection region 24 so as to form a pn junction and undergo zener breakdown at the desired voltage. A resistor 26 composed of polysilicon is connected to the base electrode connection region 24 via a metal electrode 16a. As a result, this semiconductor device has a bipolar transistor in which a zener diode ZD and the resistor 26 are serially built into the base.

Abstract: An object of the present invention is to perform replacement of parts of a substrate processing apparatus more rapidly than that by the prior art. The present invention is a substrate processing apparatus constituted of, a plurality of component parts for performing predetermined processing for a substrate, identification marks being attached to the respective component parts, the apparatus including: a storage unit for storing part information on each of the component parts necessary when placing an order for a component part, in correspondence with the identification mark; an input unit for inputting an identification mark of a component part to be ordered; and a display unit for displaying the part information in the storage unit corresponding to the inputted identification mark.

Abstract: P-wells (21) are formed in, for example, a matrix in an N-type semiconductor layer (20). At an outer periphery of each of the P-wells (21) is formed, for example, a rectangular ring-shaped N+-type diffused source region (22), between which and an N-type semiconductor layer (20) which provides a drain region (23) is formed a channel region (26). A source electrode (33) is formed in such a manner as to be contact with the center portion of each of the P-wells (21) and the source region (22) in such a construction that a contact portion (40) of the P-well with the source electrode consists of P+-type regions and N+-type regions formed alternately. As a result, it is possible to rapidly eliminate the minority carrier generated in the P-well owing to a counter electromotive force etc., thus speeding the switching operations.

Abstract: A junction field-effect transistor is formed by providing a p-type gate region in a surface of an n-type semiconductor layer and n-type drain and source regions sandwiching the gate region on the surface of the n-type semiconductor layer. A p-type diffusion region is formed at least in the region on the side of the drain close to the gate region on the surface of the n-type semiconductor layer. A drain electrode is formed so that it contacts with the p-type diffusion region. As a result, the junction FET can be reduced in drain-source leak current Idss to a small, stable value. Thus, a high-gain junction field-effect transistor is obtained which has small variation in performance among actual units manufactured.

Abstract: A junction field-effect transistor is formed by providing a p-type gate region in a surface of an n-type semiconductor layer and n-type drain and source regions sandwiching the gate region on the surface of the n-type semiconductor layer. A p-type diffusion region is formed at least in the region on the side of the drain close to the gate region on the surface of the n-type semiconductor layer. A drain electrode is formed so that it contacts with the p-type diffusion region. As a result, the junction FET can be reduced in drain-source leak current Idss to a small, stable value. Thus, a high-gain junction field-effect transistor is obtained which has small variation in performance among actual units manufactured.

Abstract: Formed on the surface of an n-type semiconductor layer (21) taken as a collector region is a base region (22) consisting of a p-type region, and formed in the p-type region is an emitter region (23) consisting of an n+-type region. Further, provided in the base region is a base electrode connecting portion (24) consisting of an n+-type region, and a base electrode (26) is connected to the surface of the base electrode connecting portion, and an emitter electrode (27) and a collector electrode (28) are provided and connected electrically to the emitter region and the collector region (21), respectively. As a result, a semiconductor device is obtained which has the transistor in which the reduction in power consumption with a high withstand voltage can be achieved, and the fast switching speed is possible and the large current is obtained. Further a voltage-drive type bipolar transistor such as a digital transistor is obtained which is small in load capacity while establishing a desired drive voltage.

Abstract: A semiconductor chip provided, at a lateral face thereof, with an electrode for external electric connection. Where a semiconductor chip has a plurality of electrodes, all the electrodes are preferably formed at one or more lateral faces of the semiconductor chip. Each electrode is preferably embedded in a groove which is formed in a lateral face of the semiconductor chip and which is opened laterally of the semiconductor chip. The semiconductor chip may be a discrete bipolar transistor element. In this case, each of the base electrode, the emitter electrode and the collector electrode is preferably formed at a lateral face of the semiconductor chip.

Abstract: The present invention provides a semiconductor device having a bipolar transistor constructed so as to allow the adjustment of the base input signal voltage that switches on a transistor in which a diffusion region of a different conductivity type from that of the base region is formed at the contact of the base electrode, and to allow the base current to be controlled when a digital transistor is produced. A base electrode connection region 24 of an n+-type is provided to a p-type base region 12, and a zener voltage control diffusion region 25 of a p+-type is provided around the periphery of the base electrode connection region 24 so as to form a pn junction and undergo zener breakdown at the desired voltage. A resistor 26 composed of polysilicon is connected to the base electrode connection region 24 via a metal electrode 16a. As a result, this semiconductor device has a bipolar transistor in which a zener diode ZD and the resistor 26 are serially built into the base.

Abstract: A semiconductor device having: a base area of the first conduction type formed on a semiconductor substrate; an emitter area of the second conduction type formed in the base area; and a collector area of the second conduction type formed as joined to the base area. In the collector area, an impurity area of the first conduction type is formed as separated from the base area. A surface resistor is connected to a base electrode connected to the base area. The surface resistor is connected, at other position thereof, to the impurity area.