Patents by Inventor Kazuki Denpoh
Kazuki Denpoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130228284Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.Type: ApplicationFiled: April 1, 2013Publication date: September 5, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuki DENPOH, Peter LG Ventzek, Lin Xu, Lee Chen
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Patent number: 8409459Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.Type: GrantFiled: February 28, 2008Date of Patent: April 2, 2013Assignee: Tokyo Electron LimitedInventors: Kazuki Denpoh, Peter L G Ventzek, Lin Xu, Lee Chen
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Patent number: 8124539Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: GrantFiled: August 4, 2010Date of Patent: February 28, 2012Assignee: Tokyo Electron LimitedInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
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Publication number: 20120037597Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.Type: ApplicationFiled: August 10, 2011Publication date: February 16, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Kazuki Denpoh
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Publication number: 20110104902Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.Type: ApplicationFiled: October 27, 2010Publication date: May 5, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Chishio Koshimizu, Kazuki Denpoh, Jun Yamawaku, Masashi Saito
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Publication number: 20110094997Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.Type: ApplicationFiled: October 27, 2010Publication date: April 28, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Masashi Saito, Kazuki Denpoh, Chishio Koshimizu, Jun Yamawaku
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Publication number: 20110094682Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.Type: ApplicationFiled: October 27, 2010Publication date: April 28, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Kazuki Denpoh, Jun Yamawaku
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Publication number: 20110094996Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.Type: ApplicationFiled: October 27, 2010Publication date: April 28, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Chishio KOSHIMIZU, Masashi SAITO, Kazuki DENPOH, Jun YAMAWAKU
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Publication number: 20110094995Abstract: A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.Type: ApplicationFiled: October 27, 2010Publication date: April 28, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku, Hachishiro Iizuka
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Publication number: 20110000883Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.Type: ApplicationFiled: August 4, 2010Publication date: January 6, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Shosuke Endoh, Noriyuki Iwabuchi, Shigeaki Kato, Tomoya Okubo, Jun Hirose, Koichi Nagakura, Chishio Koshimizu, Kazuki Denpoh
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Publication number: 20100321029Abstract: Provided is a technique capable of ascertaining the process condition of the boundary between electrically positive and negative plasma regions. In a vacuum chamber, one of the parameters of process conditions is stepwisely changed to generate a plasma under at least three process conditions. The parameters include a flow rate ratio between an electrically negative gas and an electrically positive gas, a pressure in the vacuum chamber and the magnitude of an energy supplied to the gases. Next, a voltage is applied to a Langmuir probe positioned in that plasma, and a current-voltage curve indicating the relationship between the applied voltage and the electric current to flow through the probe is acquired for each of the process conditions. On the basis of the current-voltage curve group acquired, the process conditions are determined for the boundary between the electrically positive and negative plasma regions.Type: ApplicationFiled: January 30, 2009Publication date: December 23, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Toru Ito, Masato Kawakami, Sumie Nagaseki, Kazuki Denpoh
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Patent number: 7847247Abstract: A method of plasma particle simulation capable of preventing solution divergence. A space within a housing chamber of a plasma processing apparatus is divided into a plurality of cells. A weighting factor corresponding to the number of plasma particles represented by a superparticle is set in each of the divided cells. Superparticles are set in each of the divided cells using plasma particles contained in the divided cell and the set weighting factor. The behavior of the superparticles in each of the divided cells is calculated. The weighting factor becomes smaller as the divided cell is located closer to a solid wall surface of the housing chamber.Type: GrantFiled: August 26, 2008Date of Patent: December 7, 2010Assignee: Tokyo Electron LimitedInventor: Kazuki Denpoh
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Patent number: 7713431Abstract: A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.Type: GrantFiled: June 8, 2005Date of Patent: May 11, 2010Assignee: Tokyo Electron LimitedInventors: Tomoaki Ukei, Kimihiro Higuchi, Tatsuo Matsudo, Kazuki Denpoh
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Patent number: 7691226Abstract: An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely. A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.Type: GrantFiled: March 24, 2006Date of Patent: April 6, 2010Assignee: Tokyo Electron LimitedInventor: Kazuki Denpoh
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Publication number: 20100012274Abstract: A focus ring is placed on a substrate mounting table for mounting a target substrate thereon to surround the target substrate. The focus ring converges plasma on the target substrate when the target substrate is subjected to plasma processing. The focus ring is configured to create a temperature difference in its radial direction and over its full circumference during the plasma-processing of the target substrate. The focus ring also includes a radial outer region as a higher temperature region and a radial inner region as a lower temperature region. A groove is formed between the radial outer region and the radial inner region to extend over the full circumference of the focus ring.Type: ApplicationFiled: July 16, 2009Publication date: January 21, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Masaaki Miyagawa, Katsuhiko Ono, Chishio Koshimizu, Kazuki Denpoh, Tatsuo Matsudo, Yasuhiro Hamada
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Publication number: 20090218212Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.Type: ApplicationFiled: February 28, 2008Publication date: September 3, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuki Denpoh, Peter LG Ventzek, Lin Xu, Lee Chen
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Publication number: 20090120582Abstract: A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.Type: ApplicationFiled: November 7, 2008Publication date: May 14, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Kazuki Denpoh, Hiromasa Mochiki
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Publication number: 20090057578Abstract: A method of plasma particle simulation capable of preventing solution divergence. A space within a housing chamber of a plasma processing apparatus is divided into a plurality of cells. A weighting factor corresponding to the number of plasma particles represented by a superparticle is set in each of the divided cells. Superparticles are set in each of the divided cells using plasma particles contained in the divided cell and the set weighting factor. The behavior of the superparticles in each of the divided cells is calculated. The weighting factor becomes smaller as the divided cell is located closer to a solid wall surface of the housing chamber.Type: ApplicationFiled: August 26, 2008Publication date: March 5, 2009Applicant: TOKYO ELECTRON LIMITEDInventor: Kazuki DENPOH
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Publication number: 20070187363Abstract: A substrate processing apparatus that enables a state of plasma over a substrate to be maintained in a desired state easily. A plasma processing apparatus 10 that has therein a camber 11, a stage 12, and a processing gas introducing nozzle 38 carries out etching on a wafer W. The chamber 11 houses the wafer W. The stage 12 is disposed in the chamber 11 and the wafer W is mounted thereon. The processing gas introducing nozzle 38 is a projecting body that projects out into the chamber 11, and has therein a plurality of processing gas introducing holes 56 that open out in different directions to one another.Type: ApplicationFiled: February 12, 2007Publication date: August 16, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Hiromi OKA, Akitaka Shimizu, Shosuke Endoh, Kazuki Denpoh
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Publication number: 20060214593Abstract: An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely. A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.Type: ApplicationFiled: March 24, 2006Publication date: September 28, 2006Applicant: TOKYO ELECTRON LIMITEDInventor: Kazuki Denpoh