Patents by Inventor Kazuki Ota

Kazuki Ota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200276968
    Abstract: When starting a skip downshift, a controller for an automatic transmission disengages two or more engagement elements that are in an engaged state. The disengaging two or more engagement elements includes setting a first engagement element, which is one of the two or more engagement elements that are disengaged and is used to form an intermediate gear stage having a lower transmission ratio than a post-shifting gear stage, to an engagement preparation state that maintains a state immediately before the engaged state. Subsequently, the controller engages a second engagement element, which is used to form both the intermediate gear stage and the post-shifting gear stage, and temporarily increases engagement pressure of the first engagement element. The controller disengages the first engagement element and engages a third engagement element, which is used to form the post-shifting gear stage, to form the post-shifting gear stage.
    Type: Application
    Filed: February 13, 2020
    Publication date: September 3, 2020
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, AISIN AW CO., LTD.
    Inventors: Tomohiro CHIMBE, Keisuke OTA, Yuji KAJIYAMA, Daiki FUKUDA, Kazuki IMANISHI, Takuma SUGINO
  • Patent number: 10761011
    Abstract: Any one or both of an optical system with a structured lighting pattern and a structured detecting system having a plurality of regions with different optical characteristics are used. In addition, optical signals from an object to be observed through one or a small number of pixel detectors are detected while changing relative positions between the object to be observed and any one of the optical system and the detecting system, time series signal information of the optical signals are obtained, and an image associated with an object to be observed from the time series signal information is reconstructed.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: September 1, 2020
    Assignees: The University of Tokyo, Osaka University
    Inventors: Sadao Ota, Ryoichi Horisaki, Kazuki Hashimoto
  • Patent number: 10712602
    Abstract: Optical device includes first substrate being light transmissive, second substrate opposing first substrate and being light transmissive, and light distribution layer disposed between first substrate and second substrate and distributing incident light. Light distribution layer includes uneven structure portion having a plurality of projections repeated in the z axial direction parallel to the main face of first substrate, and optical medium portion containing a birefringent material and disposed to fill a plurality of recesses that are spaces between the plurality of projections. Light blocking component configured to block at least part of incident light is disposed in the plurality of recesses.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: July 14, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Kazuki Kitamura, Hiroshi Fukushima, Norihiro Ito, Hirofumi Kubota, Masuyuki Ota
  • Patent number: 10519902
    Abstract: A first downstream part of an intake manifold has a first downstream passage configured to communicate with an intake port of a first cylinder head. A second downstream part of the intake manifold has a second downstream passage configured to communicate with an intake port of a second cylinder head. An upstream part is coupled to the first downstream part and the second downstream part. The upstream part is arranged upstream from the first and second downstream parts in the flow direction of intake air and has a first upstream passage and a second upstream passage. The material of the first downstream part and the material of the second downstream part both have higher rigidity than the material of the upstream part.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: December 31, 2019
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato Fukui, Kazuki Ota
  • Patent number: 10504502
    Abstract: A sound control device includes: a detection unit that detects a first operation on an operator and a second operation on the operator, the second operation being performed after the first operation; and a control unit that causes output of a second sound to be started, in response to the second operation being detected. The control unit causes output of a first sound to be started before causing the output of the second sound to be started, in response to the first operation being detected.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: December 10, 2019
    Assignee: YAMAHA CORPORATION
    Inventors: Keizo Hamano, Yoshitomo Ota, Kazuki Kashiwase
  • Publication number: 20190301460
    Abstract: A scroll compressor includes a fixed scroll and an orbiting scroll. An orbiting angle of the orbiting scroll when a compression chamber is formed and compression of fluid is initiated is referred to as an orbiting initiation angle. An orbiting angle of the orbiting scroll when the compression of the fluid is terminated is referred to as an orbiting termination angle. An orbiting angle of the orbiting scroll when an end of the orbiting spiral wall initiates contact with an arcuate portion of the fixed spiral wall is referred to as a distal end contact initiation angle. The formation point distance is a peak in at least one of orbiting angles obtained by subtracting integer multiples of 360° from an orbiting angle in a range from the distal end contact initiation angle to the orbiting termination angle.
    Type: Application
    Filed: March 26, 2019
    Publication date: October 3, 2019
    Applicant: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Takumi MAEDA, Takayuki OTA, Kosaku TOZAWA, Takuro YAMASHITA, Yuya HATTORI, Tatsunori TOMOTA, Yasuhiro KONDOH, Kazuki SHIBATA, Etsuko HORI, Hideyuki SUZUKI, Kimihiro FUKAWA
  • Patent number: 10354629
    Abstract: A sound control device includes: a reception unit that receives a start instruction indicating a start of output of a sound; a reading unit that reads a control parameter that determines an output mode of the sound, in response to the start instruction being received; and a control unit that causes the sound to be output in a mode according to the read control parameter.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: July 16, 2019
    Assignee: YAMAHA CORPORATION
    Inventors: Keizo Hamano, Yoshitomo Ota, Kazuki Kashiwase
  • Publication number: 20190196255
    Abstract: Optical device includes first substrate being light transmissive, second substrate opposing first substrate and being light transmissive, and light distribution layer disposed between first substrate and second substrate and distributing incident light. Light distribution layer includes uneven structure portion having a plurality of projections repeated in the z axial direction parallel to the main face of first substrate, and optical medium portion containing a birefringent material and disposed to fill a plurality of recesses that are spaces between the plurality of projections. Light blocking component configured to block at least part of incident light is disposed in the plurality of recesses.
    Type: Application
    Filed: June 13, 2017
    Publication date: June 27, 2019
    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Kazuki KITAMURA, Hiroshi FUKUSHIMA, Norihiro ITO, Hirofumi KUBOTA, Masuyuki OTA
  • Publication number: 20190093609
    Abstract: A first downstream part of an intake manifold has a first downstream passage configured to communicate with an intake port of a first cylinder head. A second downstream part of the intake manifold has a second downstream passage configured to communicate with an intake port of a second cylinder head. An upstream part is coupled to the first downstream part and the second downstream part. The upstream part is arranged upstream from the first and second downstream parts in the flow direction of intake air and has a first upstream passage and a second upstream passage. The material of the first downstream part and the material of the second downstream part both have higher rigidity than the material of the upstream part.
    Type: Application
    Filed: August 20, 2018
    Publication date: March 28, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Masato FUKUI, Kazuki OTA
  • Publication number: 20180233590
    Abstract: In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer).
    Type: Application
    Filed: March 16, 2018
    Publication date: August 16, 2018
    Inventors: Takashi Inoue, Tatsuo Nakayama, Yuji Ando, Yasuhiro Murase, Kazuki Ota, Hironobu Miyamoto, Katsumi Yamanoguchi, Naotaka Kuroda, Akio Wakejima, Yasuhiro Okamoto
  • Patent number: 9972207
    Abstract: An information collection system includes a first communication device provided at a first vehicle including a processor configured to execute a process. The process includes receiving operations by a first input section, and wirelessly transmitting, by a first transmission section, specific information according to the operation received by the first input section. The information collection system further includes a second communication device provided at a second vehicle including a processor configured to execute a process. The process includes receiving, by a first reception section, the specific information transmitted by the first transmission section, and wirelessly transmitting, to a device that is different from the first communication device by a second transmission section, position information enabling identification of a position at which the specific information was received by the first reception section.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: May 15, 2018
    Assignee: FUJITSU ADVANCED ENGINEERING LIMITED
    Inventors: Yoshitoshi Kurose, Kazuki Ota, Ryutaro Motora, Shota Irie, Tomomi Nishida
  • Patent number: 9954087
    Abstract: In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer).
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: April 24, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Takashi Inoue, Tatsuo Nakayama, Yuji Ando, Yasuhiro Murase, Kazuki Ota, Hironobu Miyamoto, Katsumi Yamanoguchi, Naotaka Kuroda, Akio Wakejima, Yasuhiro Okamoto
  • Patent number: 9780738
    Abstract: A semiconductor device is provided with: a field-effect transistor that has a source electrode and a drain electrode that are connected to a semiconductor layer, a gate electrode that is provided on the surface of the semiconductor layer between the source electrode and the drain electrode, and a field plate electrode that is provided on the surface of the semiconductor layer in the vicinity of the gate electrode via an insulating layer, wherein the field-effect transistor amplifies high frequency signals received by the gate electrode to be outputted from the drain electrode; and a voltage dividing circuit that divides a potential difference between the drain electrode and a reference potential GND, and applies a bias voltage such that respective parts of the field plate electrode have a mutually equal potential.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: October 3, 2017
    Assignee: Renesas Electronics Corporation
    Inventor: Kazuki Ota
  • Patent number: 9768257
    Abstract: A high electron mobility transistor having a channel layer, electron supply layer, source electrode, and drain electrode is included so as to have a cap layer formed on the electron supply layer between the source and drain electrodes and having an inclined side surface, an insulating film having an opening portion on the upper surface of the cap layer and covering the side surface thereof, and a gate electrode is formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the drain electrode side. The gate electrode having an overhang on the drain electrode side can reduce the peak electric field.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: September 19, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Kazuki Ota, Yuji Ando
  • Patent number: 9582528
    Abstract: A system and method for operating a big-data platform that includes at a data analysis platform, receiving discrete client data; storing the client data in a network accessible distributed storage system that includes: storing the client data in a real-time storage system; and merging the client data into a columnar-based distributed archive storage system; receiving a data query request through a query interface; and selectively interfacing with the client data from the real-time storage system and archive storage system according to the query.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: February 28, 2017
    Assignee: Treasure Data, Inc.
    Inventors: Sadayuki Furuhashi, Hironobu Yoshikawa, Kazuki Ota
  • Patent number: 9530879
    Abstract: A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In1-zAlzN (0?z?1). The channel layer includes a composition of AlxGa1-xN (0?x?1). A recess is provided in a region between the source electrode and the drain electrode, wherein the recess goes through the electron supplying layer to a depth that exposes the channel layer, and the gate electrode is disposed on a gate insulating film that covers a bottom surface and an inner wall surface of the recess.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: December 27, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Kazuki Ota
  • Publication number: 20160284216
    Abstract: An information collection system includes a first communication device provided at a first vehicle including a processor configured to execute a process. The process includes receiving operations by a first input section, and wirelessly transmitting, by a first transmission section, specific information according to the operation received by the first input section. The information collection system further includes a second communication device provided at a second vehicle including a processor configured to execute a process. The process includes receiving, by a first reception section, the specific information transmitted by the first transmission section, and wirelessly transmitting, to a device that is different from the first communication device by a second transmission section, position information enabling identification of a position at which the specific information was received by the first reception section.
    Type: Application
    Filed: March 25, 2016
    Publication date: September 29, 2016
    Inventors: Yoshitoshi KUROSE, Kazuki OTA, Ryutaro MOTORA, Shota IRIE, Tomomi NISHIDA
  • Publication number: 20160246824
    Abstract: A system and method for operating a big-data platform that includes at a data analysis platform, receiving discrete client data; storing the client data in a network accessible distributed storage system that includes: storing the client data in a real-time storage system; and merging the client data into a columnar-based distributed archive storage system; receiving a data query request through a query interface; and selectively interfacing with the client data from the real-time storage system and archive storage system according to the query.
    Type: Application
    Filed: May 5, 2016
    Publication date: August 25, 2016
    Inventors: Sadayuki Furuhashi, Hironobu Yoshikawa, Kazuki Ota
  • Publication number: 20160079409
    Abstract: A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In1-zAlzN (0?z?1). The channel layer includes a composition of AlxGa1-xN (0?x?1). A recess is provided in a region between the source electrode and the drain electrode, wherein the recess goes through the electron supplying layer to a depth that exposes the channel layer, and the gate electrode is disposed on a gate insulating film that covers a bottom surface and an inner wall surface of the recess.
    Type: Application
    Filed: November 20, 2015
    Publication date: March 17, 2016
    Applicant: Renesas Electronics Corporation
    Inventors: Yasuhiro OKAMOTO, Yuji ANDO, Tatsuo NAKAYAMA, Takashi INOUE, Kazuki OTA
  • Patent number: 9231096
    Abstract: A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In1?zAlzN (0?z?1), a channel layer having a composition of: AlxGa1?xN (0?x?1) or InyGa1?yN (0?y?1). Or GaN provided on and lattice-matched to the lower barrier layer, a source electrode and a drain electrode having ohmic contact to an upper part of the semiconductor layers, disposed spaced to each other, and a gate electrode arranged via a gate insulating film in a region lying between the source electrode and the drain electrode.
    Type: Grant
    Filed: November 21, 2014
    Date of Patent: January 5, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Kazuki Ota