Patents by Inventor Kazumi Kamada

Kazumi Kamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Opposed terminal structure having a nitride semiconductor element
    Patent number: 7049635
    Abstract: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
    Type: Grant
    Filed: April 27, 2005
    Date of Patent: May 23, 2006
    Assignee: Nichia Corporation
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
  • Opposed terminal structure having a nitride semiconductor element
    Publication number: 20050211993
    Abstract: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
    Type: Application
    Filed: April 27, 2005
    Publication date: September 29, 2005
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
  • Opposed terminal structure having a nitride semiconductor element
    Patent number: 6946683
    Abstract: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
    Type: Grant
    Filed: September 28, 2004
    Date of Patent: September 20, 2005
    Assignee: Nichia Corporation
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
  • Method for producing a nitride semiconductor element
    Patent number: 6916676
    Abstract: A method of producing an efficient nitride semiconductor element having an opposed terminal structure. The method includes a growing step for growing the nitride semiconductor further having an undoped GaN layer on a different materials substrate; subsequently, an attaching step for attaching the supporting substrate to the first conductive type nitride semiconductor layer side of the nitride semiconductor and interposing a first terminal between them; and subsequently, an exposing step for exposing the second conductive type nitride semiconductor layer by eliminating the different material substrate and the undoped GaN.
    Type: Grant
    Filed: July 9, 2003
    Date of Patent: July 12, 2005
    Assignee: Nichia Corporation
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
  • Opposed terminal structure having a nitride semiconductor element
    Publication number: 20050035364
    Abstract: An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.
    Type: Application
    Filed: September 28, 2004
    Publication date: February 17, 2005
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
  • Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
    Publication number: 20040104390
    Abstract: The present invention provides a high efficient nitride semiconductor element having an opposed terminal structure, whose terminals facing each other, and a method for producing thereof.
    Type: Application
    Filed: July 9, 2003
    Publication date: June 3, 2004
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
  • Nitride semiconductor element with a supporting substrate
    Patent number: 6744071
    Abstract: A highly efficient nitride semiconductor element having an opposed terminal structure, whose terminals face each other. The nitride semiconductor element includes a conductive layer, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal, on a supporting substrate successively. The first terminal and a first insulating protect layer are interposed between the conductive layer and a first conductive type nitride semiconductor layer of the nitride semiconductor.
    Type: Grant
    Filed: January 27, 2003
    Date of Patent: June 1, 2004
    Assignee: Nichia Corporation
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto
  • Nitride semiconductor element with a supporting substrate and a method for producing a nitride semiconductor element
    Publication number: 20030141506
    Abstract: The present invention provides a high efficient nitride semiconductor element having an opposed terminal structure, whose terminals facing each other, and a method for producing thereof.
    Type: Application
    Filed: January 27, 2003
    Publication date: July 31, 2003
    Inventors: Masahiko Sano, Mitsuhiro Nonaka, Kazumi Kamada, Masashi Yamamoto