Abstract: A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.

Abstract: There is provided a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent based on a result of comparing a sense voltage with a sense reference voltage, the sense voltage corresponding to a sense current flowing through the current detection terminal; and an adjustment unit that adjusts the sense reference voltage based on a detection result of the current detection unit.

Abstract: There is provide a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent in response to a sense current exceeding an overcurrent threshold value, the sense current flowing through the current detection terminal; and an adjustment unit that sets, based on a detection result of the current detection unit, the overcurrent threshold value in a transient period during turn on and turn off of the semiconductor element to be higher than the overcurrent threshold value in a period other than the transient period.

Abstract: A semiconductor device includes: a semiconductor layer of a first conductivity-type; a well region of a second conductivity-type provided at an upper part of the semiconductor layer; a base region of the second conductivity-type provided at an upper part of the well region; a carrier supply region of the first conductivity-type provided at an upper part of the base region; a drift region of the first conductivity-type provided separately from the base region; a carrier reception region of the first conductivity-type provided at an upper part of the drift region; a gate electrode provided on a top surface of the well region interposed between the base region and the drift region via a gate insulating film; and a punch-through prevention region of the second conductivity-type provided at the upper part of the well region and having an impurity concentration different from the impurity concentration of the base region.

Abstract: There is provide a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent in response to a sense current exceeding an overcurrent threshold value, the sense current flowing through the current detection terminal; and an adjustment unit that sets, based on a detection result of the current detection unit, the overcurrent threshold value in a transient period during turn on and turn off of the semiconductor element to be higher than the overcurrent threshold value in a period other than the transient period.

Abstract: There is provided a current detection circuit including: a current detection unit that detects a control current flowing between a control terminal of a semiconductor element of voltage-controlled type having a current detection terminal, and a drive circuit; an overcurrent detection unit that detects an overcurrent based on a result of comparing a sense voltage with a sense reference voltage, the sense voltage corresponding to a sense current flowing through the current detection terminal; and an adjustment unit that adjusts the sense reference voltage based on a detection result of the current detection unit.

Abstract: A power conversion device, including first and second semiconductor switching elements, first and second free wheeling diodes respectively connected in reverse parallel to the first and second semiconductor switching elements, and first and second drive circuits configured to respectively on/off drive the first and second semiconductor switching elements. The first and second semiconductor switching elements are connected in series to form a half bridge circuit and are respectively disposed on upper and lower arms of the half bridge circuit. The second drive circuit includes an alarm signal generation circuit configured to generate different alarm signals upon detecting overcurrent in different arms of the half bridge circuit.

Abstract: Aspects of the present invention provides a device that is capable of accurately measuring an output current of a transistor, controls the drive of a switching element, by using an existing IC tester without any evaluation board improvement. The control device according to one aspect of the present invention has: a drive circuit, a plurality of transistors for controlling the drive of a switching element and a transistor operation controller. A transistor for turning the switching element OFF is configured by a plurality of transistors. The transistor operation controller, in a normal operation, performs ON/OFF control on the two transistors simultaneously or collectively by means of the same drive signal output from the drive circuit. In a test operation, the transistor operation controller sequentially selects one of the transistors and supplies the same drive signal to the selected transistor, to drive the transistors individually.

Abstract: Embodiments of the invention provide a drive circuit including: a constant current source that generates a constant current; a switching circuit that connects a gate of the insulated gate switching element to a power supply potential side via the constant current source when turning the insulated gate switching element ON and connects the gate of the insulated gate switching element to a reference potential side via a discharge circuit when turning the insulated gate switching element OFF; a gate voltage detection circuit that detects a gate voltage of the insulated gate switching element; and a current mode selection circuit that switches a mode of the constant current source from a normal current mode to a low current consumption mode when detecting, based on the gate voltage detected by the gate voltage detection circuit, that the insulated gate switching element is turned ON.

Abstract: A power conversion device, including first and second semiconductor switching elements, first and second free wheeling diodes respectively connected in reverse parallel to the first and second semiconductor switching elements, and first and second drive circuits configured to respectively on/off drive the first and second semiconductor switching elements. The first and second semiconductor switching elements are connected in series to form a half bridge circuit and are respectively disposed on upper and lower arms of the half bridge circuit. The second drive circuit includes an alarm signal generation circuit configured to generate different alarm signals upon detecting overcurrent in different arms of the half bridge circuit.

Abstract: In aspects of the invention, a photocoupler output signal receiving circuit includes a first constant current circuit, connected between an input terminal and the high potential side of a direct current power source, that discharges current, a second constant current circuit, connected between the input terminal and the low potential side of the direct current power source, that takes in current, and switching elements that operate the first and second constant current circuits in a complementary way, wherein the switching elements are operated so that current is taken in by the second constant current circuit after a photocoupler is turned on, and are operated so that current is discharged by the first constant current circuit after the photocoupler is turned off, and a discharge current value in a current discharge period is reduced after a certain period elapses from the start of discharging.

Abstract: On top of a silicon substrate, a polyimide film with a thickness of 10 ?m is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 ?m is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 ?m, and a Cu coil with a height 35 ?m, width 90 ?m, space 25 ?m, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 ?m, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 ?m is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive.

Abstract: On top of a silicon substrate, a polyimide film with a thickness of 10 &mgr;m is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 &mgr;m is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 &mgr;m, and a Cu coil with a height 35 &mgr;m, width 90 &mgr;m, space 25 &mgr;m, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 &mgr;m, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 &mgr;m is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive.

Abstract: On top of a silicon substrate, a polyimide film with a thickness of 10 &mgr;m is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 &mgr;m is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 &mgr;m, and a Cu coil with a height 35 &mgr;m, width 90 &mgr;m, space 25 &mgr;m, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 &mgr;m, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 &mgr;m is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive.