Patents by Inventor Kazunobu Kuwazawa

Kazunobu Kuwazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080210994
    Abstract: A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from the photoelectric transducer; a transfer and retention unit that is provided between the photoelectric transducer and the floating diffusion for a purpose of controlling a transfer of the light-generated charge and has a charge-retaining region that can retain the light-generated charge generated from the photoelectric transducer; a reset unit that initializes a potential of the floating diffusion; an amplifying transistor that generates an output based on a potential of the floating diffusion; a selection transistor that selectively outputs an output of the amplifying transistor; and an excessive charge-discharging unit that discharges excessive electric charge generated from the photoelectric transducer.
    Type: Application
    Filed: February 7, 2008
    Publication date: September 4, 2008
    Inventor: Kazunobu Kuwazawa
  • Patent number: 7402881
    Abstract: A solid state imaging device comprising: a pixel region including a matrix of cells; reading means driving a modulation transistor and a residual electric charge discharging control element and carrying out different controls to cells where reading is and is not carried out, in a modulation period when a signal modulation output based on photo-generated electric charges accumulated in a modulation well, and a noise modulation output based on a noise component are obtained; clear means driving the modulation transistor and the discharging control element, and carrying out different controls to cells where a clear is and is not carried out, in a clear period when residual electric charges in the modulation well are discharged; and dummy clear means controlling the clear means, and carrying out control for a cell where the clear is not carried out, to all the cells, before reading a first line from the pixel region.
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: July 22, 2008
    Assignee: Seiko Epson Corporation
    Inventor: Kazunobu Kuwazawa
  • Patent number: 7352028
    Abstract: A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from the photoelectric transducer; a transfer and retention unit that is provided between the photoelectric transducer and the floating diffusion for a purpose of controlling a transfer of the light-generated charge and has a charge-retaining region that can retain the light-generated charge generated from the photoelectric transducer; a reset unit that initializes a potential of the floating diffusion; an amplifying transistor that generates an output based on a potential of the floating diffusion; a selection transistor that selectively outputs an output of the amplifying transistor; and an excessive charge-discharging unit that discharges excessive electric charge generated from the photoelectric transducer.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: April 1, 2008
    Assignee: Seiko Epson Corporation
    Inventor: Kazunobu Kuwazawa
  • Patent number: 7342270
    Abstract: A solid state imaging system includes a plurality of amplifying units that are placed one by one for every pair of photoelectric conversion areas. Each amplifying unit is placed side-by-side in one direction of a two-dimensional matrix for outputting a pixel signal according to a photogenerated charge retained in a floating diffusion area. A plurality of transfer controlling elements are placed in pairs for each pair of the photoelectric conversion areas for controlling the transfer of the photogenerated charge by changing a potential barrier of a photogenerated charge transfer route between each of the accumulation wells in the pair of photoelectric conversion areas and the corresponding floating diffusion area. A plurality of transfer gate lines are connected to each of the transfer controlling elements in the plural photoelectric conversion areas that are aligned in the other direction of the two-dimensional matrix.
    Type: Grant
    Filed: August 18, 2005
    Date of Patent: March 11, 2008
    Assignee: Seiko Epson Corporation
    Inventor: Kazunobu Kuwazawa
  • Patent number: 7285764
    Abstract: An imaging device comprising: a photoelectric conversion element generating photo-generated charges; an accumulation well accumulating the charges; a modulation well storing the charges; a modulation transistor having a channel threshold voltage controlled by the stored charges and outputting a corresponding signal; a transfer control element having a control end coupled to a control end of the modulation transistor and controlling the potential barrier of a transfer channel between the accumulation and modulation wells, and controlling transfer of the charges; an unwanted electric charge discharging control element controlling the potential barrier of an unwanted electric charge discharging channel coupled to the accumulation well, and discharging charges overflowing from the accumulation well during a period except for the charges transfer period; and a residual charge discharging control element controlling the potential barrier of a residual electric charge discharging channel coupled to the modulation we
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: October 23, 2007
    Assignee: Seiko Epson Corporation
    Inventors: Kazunobu Kuwazawa, Yutaka Maruo, Sanae Nishida, Yoshitaka Narita
  • Publication number: 20070216793
    Abstract: A line sensor, includes a plurality of pixels which is arranged linearly, the number of the plurality of pixels including the number depending on a resolution, a first pixel group which is provided to a center portion of the plurality of pixels arranged linearly and has a pixel pitch shorter than a length corresponding to a pixel pitch calculated from the resolution, and a second pixel group which is provided to each of both side portions of the center portion, and has a pixel pitch longer than the length corresponding to the pixel pitch calculated from the resolution.
    Type: Application
    Filed: March 15, 2007
    Publication date: September 20, 2007
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Kazunobu KUWAZAWA
  • Patent number: 7141848
    Abstract: A semiconductor device has a split-gate type memory transistor, a capacitor element, and another capacitor element formed on the same chip, in which the capacitor values of the capacitor element and the another capacitor element are independently set to different values. A capacitor element 53 has a dielectric film that includes a silicon oxide film 41 (thermal oxide film), a silicon nitride film 43b and a silicon oxide film 57 (thermal oxide film). A capacitor element 55 has a dielectric film that includes a silicon oxide film 25 (thermal oxide film), a silicon oxide film 37 (CVD silicon oxide film), a silicon oxide film 41 (thermal oxide film), a silicon nitride film 43b and a silicon oxide film 57 (thermal oxide film).
    Type: Grant
    Filed: April 6, 2000
    Date of Patent: November 28, 2006
    Assignee: Seiko Epson Corporation
    Inventor: Kazunobu Kuwazawa
  • Patent number: 7132706
    Abstract: A solid-state imaging device is provided which has preferable linearity of signal outputs according to light intensities and does not cause dark defects even at a low light intensity. The solid-state imaging device comprises: a ring gate having a non-uniform width; a source region formed inside the ring gate; a drain region formed surrounding a circumference of the ring gate; and a carrier pocket formed under the ring gate, wherein a region where (X divided by Y) is the smallest substantially coincides with a region where Z is the shortest; X is a pocket-to-source distance; Y is a pocket-to-drain distance; and Z is a source-to-drain distance.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: November 7, 2006
    Assignee: Seiko Epson Corporation
    Inventor: Kazunobu Kuwazawa
  • Patent number: 7132705
    Abstract: A solid state imaging device including: a photoelectric conversion element generating photo-generated charges corresponding to incident light; an accumulation well accumulating photo-generated charges; a modulation well storing photo-generated charges from the accumulation well; a modulation transistor whose channel threshold voltage is controlled by the stored photo-generated charges and that outputs a pixel signal corresponding to the photo-generated charges; a transfer control element changing the potential barrier of a transfer channel between the accumulation well and the modulation well to control transfer of the photo-generated charges; and an unwanted charges discharge control element controlling the potential barrier of an unwanted charges discharge channel coupled to the accumulation well, and discharging charges which overflow from the accumulation well through the unwanted charges discharge channel during all periods other than the transfer period when photo-generated charges are transferred from
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: November 7, 2006
    Assignee: Seiko Epson Corporation
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20060086996
    Abstract: A solid state imaging device, includes: a sensor cell array having a plurality of sensor cells arranged in a matrix on a substrate, each sensor cell including: a photoelectric transducer provided in the substrate and generating photo-generated electric charges according to an incident light; a transfer gate formed on the substrate with a gate insulating layer therebetween; a charge retention region formed under the gate insulating layer and storing the photo-generated electric charges that are transferred from the photoelectric transducer by applying a predetermined potential to the transfer gate; a buried layer formed between the charge retention region and the gate insulating layer; and a floating diffusion storing the photo-generated electric charges that are transferred from the charge retention region by applying a predetermined potential to the transfer gate.
    Type: Application
    Filed: September 15, 2005
    Publication date: April 27, 2006
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20060065915
    Abstract: A solid-state imaging device includes: a substrate; a photoelectric transducer that is provided within the substrate and generates light-generated charge in accordance with incident light; a floating diffusion that retains the light-generated charge generated from the photoelectric transducer; a transfer and retention unit that is provided between the photoelectric transducer and the floating diffusion for a purpose of controlling a transfer of the light-generated charge and has a charge-retaining region that can retain the light-generated charge generated from the photoelectric transducer; a reset unit that initializes a potential of the floating diffusion; an amplifying transistor that generates an output based on a potential of the floating diffusion; a selection transistor that selectively outputs an output of the amplifying transistor; and an excessive charge-discharging unit that discharges excessive electric charge generated from the photoelectric transducer.
    Type: Application
    Filed: September 19, 2005
    Publication date: March 30, 2006
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20060063295
    Abstract: A solid-state image pickup device having inside a substrate a plurality of accumulation wells that accumulate light-producing electric charge produced in a photoelectric conversion region corresponding to light applied thereto, the plurality of photoelectric conversion regions being arranged in a two-dimensional matrix on the substrate, including: a plurality of modulation transistors, each of which is provided in every pair of the photoelectric conversion regions adjoined in one direction of the two-dimensional matrix, which control a threshold voltage of a channel using the light-producing electric charge held in a modulation well, and which output a pixel signal corresponding to the light-producing electric charge; a plurality of transfer control elements, each pair of which is provided in every pair of the adjoining photoelectric conversion regions, which shift a potential barrier of a path for transferring the light-producing electric charge between each accumulation well and the corresponding modulation
    Type: Application
    Filed: August 30, 2005
    Publication date: March 23, 2006
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20060060897
    Abstract: A solid state imaging system having, in a substrate, a plurality of accumulation wells for accumulating photogenerated charge generated on a photoelectric conversion area according to an incident light, the plural photoelectric conversion areas being aligned on the substrate in a two-dimensional matrix, the solid state imaging system including: a plurality of amplifying units that is placed one by one for every pair of photoelectric conversion areas, each of which is placed side-by-side in one direction of the two-dimensional matrix, for outputting a pixel signal according to the photogenerated charge retained in a floating diffusion area, a plurality of transfer controlling elements that is placed in pairs for each pair of the photoelectric conversion areas for controlling the transfer of the photogenerated charge by changing a potential barrier of a photogenerated charge transfer route between each of the accumulation wells in the pair of photoelectric conversion areas and the corresponding floating diffusi
    Type: Application
    Filed: August 18, 2005
    Publication date: March 23, 2006
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20060028565
    Abstract: A solid state imaging device, including: a plurality of storage wells which stores an optically generated charge that is generated at a photoelectric conversion region corresponding to an incident light, the plurality of storage wells being inside a substrate; wherein a plurality of the photoelectric conversion regions is arrayed on the substrate in a two dimensional matrix; a plurality of amplifiers each installed per every pair of the photoelectric conversion regions that are adjacent in one direction of the two dimensional matrix, outputting a pixel signal that corresponds to the optically generated charge retained in a floating diffusion region; a plurality of transfer controlling elements, a pair of which is installed in every pair of the photoelectric conversion regions, changing a potential barrier of an optically generated charge transfer route, the transfer route being between each of the storage wells in the pair of the photoelectric conversion regions and the corresponding floating diffusion region
    Type: Application
    Filed: July 7, 2005
    Publication date: February 9, 2006
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20060028567
    Abstract: A solid-state imaging device including a plurality of unit pixels, each of which includes: a storage well for storing electric charge generated by a photoelectric transducer using incident light; a transferring unit, which is formed on a top surface of a substrate, for transferring the electric charge to a floating diffusion region; and an amplifier for outputting a pixel signal that is amplified based on the electric charge transferred to the floating diffusion region, wherein: the transferring unit is a transfer control element having: a transfer gate that is provided on the substrate surface through an insulation film so that part of the transfer gate overlaps the storage well when the substrate is viewed from a direction orthogonal to the substrate surface; and an electric charge-retaining region for retaining the electric charge that is provided within the substrate and under the transfer gate; and further a diffusion layer that serves as a transfer path between the floating diffusion region and the elec
    Type: Application
    Filed: July 14, 2005
    Publication date: February 9, 2006
    Inventor: Kazunobu Kuwazawa
  • Patent number: 6946638
    Abstract: A solid-state imaging device comprising: a photoelectric conversion element generating photo-generated charges; an accumulation well accumulating the charges; a modulation well holding the charges from the accumulation well; a modulation transistor controlled by the charges held in the modulation well and that outputs a signal corresponding to the charges; a transfer control element changing the potential barrier of a transfer channel between the accumulation and modulation wells to control transfer of the charges; an unwanted charges discharging control element controlling the potential barrier of an unwanted charges discharging channel coupled to the accumulation well, and discharging charges that overflow from the accumulation well during a period other than the transfer period when the photo-generated charges are transferred; and a residual charges discharging control element controlling the potential barrier of a residual charges discharging channel coupled to the modulation well, and discharging residua
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: September 20, 2005
    Assignee: Seiko Epson Corporation
    Inventors: Kazunobu Kuwazawa, Yutaka Maruo, Sanae Nishida, Yoshitaka Narita
  • Patent number: 6909144
    Abstract: A gate electrode 14 is formed through a gate oxide film 13 over a channel region 12 in an element region 11, and sidewall dielectric films 16 are provided on side sections of the gate electrode 14. Source/drain regions 17 include low concentration impurity regions 171 and high concentration impurity regions 172. The impurity regions 172 are provided, by an over-etching method when forming the sidewalls 16, at a disposition level LV2 in the element region 11, which is lower than a disposition level LV1 where the impurity regions 171 are disposed. Assisting impurity regions 173 are provided in regions where the levels change between level LV1 and LV2. As a result, the continuity of impurity regions between the impurity regions 172 and the impurity regions 171 that are low concentration extension regions is secured, the their electrical connection is stabilized.
    Type: Grant
    Filed: July 12, 2002
    Date of Patent: June 21, 2005
    Assignee: Seiko Epson Corporation
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20050110061
    Abstract: A solid-state imaging device is provided which has preferable linearity of signal outputs according to light intensities and does not cause dark defects even at a low light intensity. The solid-state imaging device comprises: a ring gate having a non-uniform width; a source region formed inside the ring gate; a drain region formed surrounding a circumference of the ring gate; and a carrier pocket formed under the ring gate, wherein a region where (X divided by Y) is the smallest substantially coincides with a region where Z is the shortest; X is a pocket-to-source distance; Y is a pocket-to-drain distance; and Z is a source-to-drain distance.
    Type: Application
    Filed: November 24, 2004
    Publication date: May 26, 2005
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20050110094
    Abstract: A solid state imaging device includes a plurality of pixels arranged in a matrix form that generates photo-generated electric charges corresponding to incidence light. The device comprises an effective pixel region used for imaging and a non-effective pixel region provided separately from the effective pixel region. Each pixel has an accumulation well which accumulates photo-generated electric charges, a modulation transistor, and a transfer control element which transfers the photo-generated electric charges accumulated in the accumulation well to the modulation transistor. When transferring the photo-generated electric charges accumulated in the accumulation well to the modulation transistor by the transfer control element, the photo-generated electric charges in the effective pixel region and the photo-generated electric charges which do not include the photo-generated electric charges in the effective pixel region are transferred separately at least two times.
    Type: Application
    Filed: October 21, 2004
    Publication date: May 26, 2005
    Inventor: Kazunobu Kuwazawa
  • Publication number: 20050099517
    Abstract: A solid state imaging device comprising: a pixel region including a matrix of cells; reading means driving a modulation transistor and a residual electric charge discharging control element and carrying out different controls to cells where reading is and is not carried out, in a modulation period when a signal modulation output based on photo-generated electric charges accumulated in a modulation well, and a noise modulation output based on a noise component are obtained; clear means driving the modulation transistor and the discharging control element, and carrying out different controls to cells where a clear is and is not carried out, in a clear period when residual electric charges in the modulation well are discharged; and dummy clear means controlling the clear means, and carrying out control for a cell where the clear is not carried out, to all the cells, before reading a first line from the pixel region.
    Type: Application
    Filed: September 17, 2004
    Publication date: May 12, 2005
    Inventor: Kazunobu Kuwazawa