Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).

Abstract: A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm?1 to 3800 cm?1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.

Abstract: The present invention relates to a blank for a nanoimprint mold, comprising a glass substrate and a hard mask layer formed on the glass substrate, wherein the hard mask layer contains chromium (Cr) and nitrogen (N) and has a Cr content of 45 to 95 at %, an N content of 5 to 55 at % and a total content of Cr and N of 95 at % or more and the thickness of the hard mask layer is 1.5 nm or more and less than 5 nm.

Abstract: To provide a process for producing an EUV mask blank, whereby the deformation of a substrate due to film stress in a Mo/Si multilayer reflective film can be reduced, and the change with time of the film stress in the Mo/Si multilayer reflective film can be reduced. A process for producing a reflective mask blank for EUVL, which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming an absorber layer for absorbing EUV light, on the multilayer reflective film, to produce a reflective mask blank for EUV lithography, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the uppermost layer of the multilayer reflective film is a Si film, and after forming the absorber layer, the substrate on which the absorber layer is formed is subjected to heating treatment at a temperature of from 110 to 170° C.

Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).

Abstract: To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate; wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component; the hard mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O) and hydrogen (H); and in the hard mask layer, the total content of Cr and either one of N and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.

Abstract: To provide an electroconductive laminate which has an excellent electrical conductivity (electromagnetic wave shielding properties) and a high visible light transmittance and is excellent in productivity, and a protective plate for a plasma display which has excellent electromagnetic wave shielding properties and a broad transmission/reflection band and is excellent in productivity.