Patents by Inventor Kazunori Kakehi
Kazunori Kakehi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220190007Abstract: An image sensor includes a substrate having first and second surfaces, pixel regions arranged in a direction parallel to the first surface, first and second photodiodes isolated from each other in each of the pixel regions, a first device isolation film between the pixel regions, a pair of second device isolation films between the first and second photodiodes and extending from the first device isolation film, a doped layer adjacent to the pair of second device isolation films and extending from the second surface to a predetermined depth and spaced apart from the first surface, the doped layer being isolated from the first device isolation film, and a barrier area between the pair of second device isolation films and having a potential greater than a potential of a portion of the substrate adjacent to the barrier area.Type: ApplicationFiled: September 2, 2021Publication date: June 16, 2022Inventors: Hyuncheol KIM, Kyungho LEE, Kazunori KAKEHI, Doosik SEOL, Kyungduck LEE, Taesub JUNG, Masato FUJITA
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Patent number: 10916587Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.Type: GrantFiled: June 17, 2019Date of Patent: February 9, 2021Inventors: Tae Yon Lee, Chang Hwa Kim, Jae Ho Kim, Sang Chun Park, Gwi Deok Ryan Lee, Beom Suk Lee, Jae Kyu Lee, Kazunori Kakehi
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Publication number: 20200119097Abstract: An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.Type: ApplicationFiled: June 17, 2019Publication date: April 16, 2020Inventors: TAE YON LEE, CHANG HWA KIM, JAE HO KIM, SANG CHUN PARK, GWI DEOK RYAN LEE, BEOM SUK LEE, JAE KYU LEE, KAZUNORI KAKEHI
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Publication number: 20160219235Abstract: A solid-state image pickup device according to an aspect of an embodiment includes a plurality of photoelectric conversion elements, a first color filter, and a second color filter. The plurality of the photoelectric conversion elements are arranged in two dimensions. The first color filter is provided over a light receiving surface of the photoelectric conversion element and selectively transmits light other than long-wavelength light in visible light. The second color filter is provided over a light receiving surface of the photoelectric conversion element other than the photoelectric conversion element provided with the first color filter, is greater in area than the first color filter, and selectively transmits the long-wavelength light in visible light.Type: ApplicationFiled: December 17, 2015Publication date: July 28, 2016Applicant: Kabushiki Kaisha ToshibaInventor: Kazunori KAKEHI
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Publication number: 20150325614Abstract: According to one embodiment, a method of manufacturing a solid-state imaging device includes a trench forming process, a concave portion forming process, a coating process, and a burying process. In the trench forming process, a trench is formed at the position to isolate a plurality of photoelectric conversion elements. In the concave portion forming process, a concave portion is formed at the position to form a light shielding film of shielding at least part of subject light incident on an adjustment photoelectric conversion element used for an image quality adjustment of an imaged image. In the coating process, inner circumferential surfaces of the trench and the concave portion are coated with an insulating film. In the burying process, a light shielding member is buried inside the trench and the concave portion whose inner circumferential surface are coated with the insulating film.Type: ApplicationFiled: July 20, 2015Publication date: November 12, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Yosuke KITAMURA, Hisashi AIKAWA, Kazunori KAKEHI
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Publication number: 20150279877Abstract: According to one embodiment, a solid state imaging device includes a semiconductor layer, a first layer, a second layer and third layer. The semiconductor layer performs photoelectric conversion. The first layer has a first refractive index. The second layer is provided between the first layer and the semiconductor layer, the second layer includes a metal oxide and has a second refractive index not greater than the first refractive index. The third layer is provided between the first layer and the second layer. The third layer has a third refractive index and includes an element bonding covalently with oxygen. The third refractive index is not greater than the first refractive index.Type: ApplicationFiled: February 19, 2015Publication date: October 1, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Rikyu IKARIYAMA, Hiroyuki FUKUMIZU, Noriteru YAMADA, Naohiro TSUDA, Kazunori KAKEHI
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Patent number: 9111833Abstract: According to one embodiment, a method of manufacturing a solid-state imaging device includes a trench forming process, a concave portion forming process, a coating process, and a burying process. In the trench forming process, a trench is formed at the position to isolate a plurality of photoelectric conversion elements. In the concave portion forming process, a concave portion is formed at the position to form a light shielding film of shielding at least part of subject light incident on an adjustment photoelectric conversion element used for an image quality adjustment of an imaged image. In the coating process, inner circumferential surfaces of the trench and the concave portion are coated with an insulating film. In the burying process, a light shielding member is buried inside the trench and the concave portion whose inner circumferential surface are coated with the insulating film.Type: GrantFiled: April 22, 2013Date of Patent: August 18, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Yosuke Kitamura, Hisashi Aikawa, Kazunori Kakehi
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Patent number: 9073045Abstract: The method for producing carbon nanotubes employs a carbon source that contains carbon and is decomposed when heated and a catalyst on a support that serves as a catalyst for production of carbon nanotubes from the carbon source. The method includes a catalyst loading step in which the catalyst starting material is distributed over the support to load the catalyst onto the support, a synthesis step in which the carbon nanotubes are synthesized on the support, and a separating step in which a separating gas stream is distributed over the support to separate the carbon nanotubes from the support, wherein the catalyst loading step, the synthesis step and the separating step are carried out while keeping the support in a heated state and switching supply of the catalyst starting material, the carbon source and the separating gas stream.Type: GrantFiled: March 6, 2009Date of Patent: July 7, 2015Assignee: Hitachi Chemical Company, Ltd.Inventors: Suguru Noda, Hisashi Sugime, Yukio Yamaguchi, Toshio Osawa, Kazunori Kakehi, Kei Hasegawa, Dong Young Kim
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Publication number: 20140183606Abstract: According to an embodiment of the invention, there is provided a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming a trench downward from an upper face of a semiconductor layer at a position where an element isolation area is formed in the semiconductor layer, and melting the upper face of the trench-formed semiconductor layer to close an open end of the trench.Type: ApplicationFiled: May 29, 2013Publication date: July 3, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Kazunori KAKEHI, Hisashi Aikawa, Yosuke Kitamura
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Publication number: 20140110809Abstract: According to one embodiment, a method of manufacturing a solid-state imaging device includes a trench forming process, a concave portion forming process, a coating process, and a burying process. In the trench forming process, a trench is formed at the position to isolate a plurality of photoelectric conversion elements. In the concave portion forming process, a concave portion is formed at the position to form a light shielding film of shielding at least part of subject light incident on an adjustment photoelectric conversion element used for an image quality adjustment of an imaged image. In the coating process, inner circumferential surfaces of the trench and the concave portion are coated with an insulating film. In the burying process, a light shielding member is buried inside the trench and the concave portion whose inner circumferential surface are coated with the insulating film.Type: ApplicationFiled: April 22, 2013Publication date: April 24, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke KITAMURA, Hisashi AIKAWA, Kazunori KAKEHI
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Publication number: 20130069130Abstract: According to one embodiment, a solid state imaging device includes a semiconductor substrate having a first surface on a light incident side and a second surface on a side opposite to the light incident side, a photodiode in the semiconductor substrate, a functional layer which covers the entire photodiode on the side of the first surface of the semiconductor substrate, and has a function of transmitting the light traveling from an exterior to an interior of the semiconductor substrate, and reflecting the light traveling from the interior to the exterior of the semiconductor substrate, and a reflecting layer which covers the entire second surface of the semiconductor substrate, and has a function of reflecting the light traveling from the interior to the exterior of the semiconductor substrate.Type: ApplicationFiled: March 22, 2012Publication date: March 21, 2013Inventor: Kazunori Kakehi
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Publication number: 20110085961Abstract: The method for producing carbon nanotubes of the invention employs a carbon source that contains carbon and is decomposed when heated and a catalyst that serves as a catalyst for production of carbon nanotubes from the carbon source, to synthesize the carbon nanotubes on a heated support placed in a reactor, the method comprising a catalyst loading step in which the catalyst starting material, as the starting material for the catalyst, is distributed over the support to load the catalyst onto the support, a synthesis step in which the carbon source is distributed over the support to synthesize the carbon nanotubes on the support, and a separating step in which a separating gas stream is distributed over the support to separate the carbon nanotubes from the support, wherein the catalyst loading step, the synthesis step and the separating step are carried out while keeping the support in a heated state and switching supply of the catalyst starting material, the carbon source and the separating gas stream.Type: ApplicationFiled: March 6, 2009Publication date: April 14, 2011Inventors: Suguru Noda, Hisashi Sugime, Yukio Yamaguchi, Toshio Osawa, Kazunori Kakehi, Kei Hasegawa, Dong Young Kim