Patents by Inventor Kazunori Koga

Kazunori Koga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11923670
    Abstract: An arc detection device includes: a low-impedance circuit connected between a node on wiring connecting the positive electrode of a DC/DC converter and a plurality of DC/DC converters, extending from the positive electrode of the DC/DC converter, and branching toward the plurality of DC/DC converters and a node on wiring connecting the negative electrode of the DC/DC converter and the plurality of DC/DC converters, extending from the negative electrode of the DC/DC converter, and branching toward the plurality of DC/DC converters; an electric current detector that detects an electric current flowing through the low-impedance circuit; and an arc determiner that determines, on the basis of the electric current detected by the electric current detector whether an electric arc has occurred.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: March 5, 2024
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tatsuo Koga, Kazunori Kidera, Keita Kanamori
  • Publication number: 20240072528
    Abstract: An arc detection device that detects an arc fault that occurs in a transmission line connecting a DC power supply that generates DC power and a power converter that converts the DC power to AC power, includes: a first determination unit that determines whether or not there is a possibility of an arc fault occurrence according to current flowing in the transmission line; a shutoff unit that temporarily stops the flow of current in the transmission line when the first determination unit determines there is a possibility of an arc fault occurrence; and a second determination unit that determines whether or not an arc fault has occurred according to an input voltage, of the power converter supplied from the DC power supply, after lifting temporary stoppage of the flow of current in the transmission line.
    Type: Application
    Filed: February 5, 2021
    Publication date: February 29, 2024
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tatsuo KOGA, Keita KANAMORI, Kazunori KIDERA, Yoshio MITSUTAKE
  • Publication number: 20120315684
    Abstract: Provided is a plasma oxidation-reduction method with which it is possible to control the structure of amino acids and proteins with high and stable reproducibility, by using plasma in order to control the amino acids and proteins that make up a living body, particularly by using plasma in order to oxidize or reduce amino acids and proteins. Also provided are a method for promoting plant/animal growth using the plasma oxidation-reduction method, and a plasma-generating device for use in the method for promoting plant/animal growth. Amino acids or proteins are oxidized or reduced in the plasma oxidation-reduction method by using an active oxygen species or active hydrogen in the plasma. Preferably, the active oxygen species comprises any one of singlet oxygen atoms, excited oxygen molecules, or hydroxyl radicals, and the active hydrogen comprises excited hydrogen atoms.
    Type: Application
    Filed: January 31, 2011
    Publication date: December 13, 2012
    Applicants: Saga University, Kyushu University, National University Corporation
    Inventors: Nobuya Hayashi, Akari Nakahigashi, Masaharu Shiratani, Kazunori Koga
  • Publication number: 20100097693
    Abstract: A confocal microscope that can reduce the measurement time is provided. Linear bright lines are extracted from the light of a light source. White light emitted from the linear bright lines is chromatically dispersed into continuous wavelength components by a chromatic aberration lens, which then irradiate a sample on a stage via an objective lens. The chromatically dispersed linear bright lines are continuously imaged for each wavelength on an optical axis in the height direction, and light having one wavelength is focused on one certain point on the surface of the sample. The reflected light of light having wavelengths focused on a surface of the sample is collected by the chromatic aberration lens via the objective lens and then focused on a slit. The light passed through the slit is separated by a spectroscopic device and imaged on a two-dimensional array photodetector.
    Type: Application
    Filed: October 16, 2008
    Publication date: April 22, 2010
    Inventor: Kazunori Koga
  • Publication number: 20080008640
    Abstract: The intention is to clarify characteristics of a cluster-free amorphous silicon film which is practically produceable without incorporation of large clusters having a size of 1 nm or more, and provide a method and an apparatus for producing the amorphous silicon film. In the cluster-free amorphous silicone (a-Si:H) film, an in-film Si—H2 bond density is 10?2 atomic % or less, and an in-film volume fraction of the large clusters is 10?1% or less. The a-Si:H film is produced by depositing, on a substrate, a deposition material in a plasma flow of any one of a silane gas, a disilane gas and a gas obtained by diluting a silane or disilane gas with one or a combination of two or more selected from the group consisting of hydrogen, Ar, He, Ne and Xe. The a-Si:H film has prominent characteristics, such that: a light-induced defect density is reduced from 2×1016 cm?3 or more in conventional a-Si:H films to substantially zero; a stabilized efficiency (%), i.e.
    Type: Application
    Filed: August 17, 2005
    Publication date: January 10, 2008
    Inventors: Yukio Watanabe, Masaharu Shiratani, Kazunori Koga
  • Publication number: 20060269690
    Abstract: A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.
    Type: Application
    Filed: May 27, 2005
    Publication date: November 30, 2006
    Applicants: ASM JAPAN K.K., Kyushu University, National University Corporation
    Inventors: Yukio Watanabe, Masaharu Shiratani, Kazunori Koga, Shota Nunomura, Shingo Ikeda, Nobuo Matsuki, Atsuki Fukazawa
  • Publication number: 20060105583
    Abstract: A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.
    Type: Application
    Filed: November 17, 2004
    Publication date: May 18, 2006
    Applicants: ASM JAPAN K.K., Kyushu University, National University Corporation
    Inventors: Shingo Ikeda, Nobuo Matsuki, Yoshinori Morisada, Yukio Watanabe, Masaharu Shiratani, Kazunori Koga, Shota Nunomura
  • Patent number: 5681995
    Abstract: An ultrasonic flaw detecting apparatus for efficiently detecting a flaw existing in a deep portion of a multi-layer structure includes a first sensor arranged so as to transmit an ultrasonic wave into a different property layer surrounded by a medium having a different acoustic impedance in the multi-layer structure, a function generator for generating a pulse-shaped sine wave, a power amplifier for amplifying and supplying the pulse-shaped sine wave to the first sensor, a second sensor arranged so as to receive a boundary echo from the different property layer, a first amplifier for amplifying the boundary echo received by the second sensor, an intensity detector for judging the intensity of an amplified signal of the boundary echo, a third sensor arranged so as to receive an echo from a flaw inside a layer in a deep portion of the different property layer, a second amplifier for amplifying the flaw echo received by the third sensor, a recorder for recording the amplified flaw echo signal, and a control unit
    Type: Grant
    Filed: March 12, 1996
    Date of Patent: October 28, 1997
    Assignees: Hitachi, Ltd., Babcock-Hitachi Kabushiki Kaisha
    Inventors: Takehiro Ooura, Kazunori Koga, Fuminobu Takahashi, Norio Awamura
  • Patent number: 5219500
    Abstract: Disclosed is a silicon nitride sintered body comprising 85 to 99 mole % of .beta.-Si.sub.3 N.sub.4, 1 to 5 mole % as the oxide (M.sub.2 O.sub.3) of at least one compound of an element (M) selected from the group consisting of Sc, Vb, Er, Ho and Dy and less than 10 mole % of excessive oxygen (O.sub.2) based on the three components, wherein the excessive oxygen/M.sub.2 O.sub.3 molar ratio is lower than 2.
    Type: Grant
    Filed: December 6, 1989
    Date of Patent: June 15, 1993
    Assignee: Kyocera Corporation
    Inventors: Makoto Yoshida, Masahiro Sato, Kazunori Koga, Kazumi Osamura, Shoji Kousaka, Tatsumi Maeda, Kiyoshi Yokoyama, Masafumi Matsunaka
  • Patent number: 5114889
    Abstract: Disclosed is a silicon nitride sintered body comprising 70 to 99 mole % of silicon nitride, 0.1 to 5 moles % of a rare earth element oxide and up to 25 moles % of silicon oxide and having a silicon oxide-to-rare earth element oxide molar ratio of from 2 to 25, wherein silicon nitride crystal grains have a fine acicular structure having an average particle major axis of up to 7 .mu.m and an average aspect ratio of at least 3.
    Type: Grant
    Filed: November 27, 1990
    Date of Patent: May 19, 1992
    Assignee: Kyocera Corporation
    Inventors: Kazumi Osamura, Masaki Terazono, Shoji Kohsaka, Kazunori Koga, Akira Saito, Masahiro Sato, Hideki Uchimura
  • Patent number: 4920085
    Abstract: Disclosed is a silicon nitride sintered body comprising 85 to 99 mol % of .beta.-Si.sub.3 N.sub.4, 1 to 5 mol % as the oxide (M.sub.2 O.sub.3) of at least one compound of an element (M) selected from the group consisting of Sc, Vb, Er, Ho and Dy and less than 10 mol % of excessive oxygen (O.sub.2) based on the three components, wherein the excessive oxygen/M.sub.2 O.sub.3 molar ratio is lower than 2.
    Type: Grant
    Filed: April 1, 1988
    Date of Patent: April 24, 1990
    Assignee: Kyocera Corporation
    Inventors: Makoto Yoshida, Masahiro Sato, Kazunori Koga, Kazumi Osamura, Shoji Kousaka, Tatsumi Maeda, Kiyoshi Yokoyama, Masafumi Matsunaka
  • Patent number: 4736630
    Abstract: An ultrasonic inspection apparatus and method in which a linear array of acoustic transmitters and receivers are disposed adjacent to a workpiece, and alternating potential source is connected to some of the acoustic transmitters to project a side lobe of an acoustic wave toward a specific zone of the workpiece. Thereafter, the connections between some of the acoustic transmitters and the potential source are automatically changed, to move the specific zone as many times as may be necessary to provided scanning of the workpiece.
    Type: Grant
    Filed: August 1, 1986
    Date of Patent: April 12, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Fuminobu Takahashi, Kazunori Koga, Satoshi Ogura, Masahiro Koike
  • Patent number: 4615217
    Abstract: A two-probe ultrasonic flaw detection apparatus, in which an ultrasonic wave is transmitted from a transmission probe into an object being inspected and ultrasonic waves reflected from a reflection surface in the object are received by a reception probe, operates to determine the position at which the combined intensity of ultrasonic waves reflected from each part of the reflection surface form a maximum. The reception probe is then moved to the position of maximum reception intensity. The position of maximum reception intensity is determined using as input parameters the ultrasonic characteristics of the object being inspected and of the transmission and reception probes, and the position of the transmission probe and the angle of incidence of the ultrasonic wave into the object.
    Type: Grant
    Filed: March 8, 1985
    Date of Patent: October 7, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Masahiro Koike, Fuminobu Takahashi, Satoshi Ogura, Kazunori Koga
  • Patent number: 4592237
    Abstract: An ultrasonic flaw detecting technique in which reflection echoes of ultrasonic waves transmitted from a plurality of vibrator elements are received, and a composite signal obtained by composing the reception signals is supplied to a composite signal reception processing circuit. A method and an apparatus in which the existence of the composite signal is detected at a first time point at which the composite signal based on the reflection echoes from an inspection target in a main lobe can be detected and at a second and a third time point which are in advance of and later than the first time point respectively and at which the composite signal based on the reflection echoes from an inspection target in the main lobe can not be detected, so that when the existence of the composite signal is detected only at the first time point, it is determined that the composite signal is that based on the reflection echoes from the inspection target.
    Type: Grant
    Filed: May 14, 1984
    Date of Patent: June 3, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Satoshi Ogura, Sakae Sugiyama, Kazunori Koga
  • Patent number: 4374793
    Abstract: A method of producing a dense sintered silicon carbide body, which is high in flexural strength, purity and strength at an elevated temperature, from polycarbosilanes is disclosed. This method comprises the following steps of:A. polymerizing organosilicon compounds to obtain insoluble and unmeltable polycarbosilane of which the melting or softening temperature lies higher than its thermal decomposition temperature;B. grinding this insoluble and unmeltable polycarbosilane to powder;C. decomposing this powder thermally in the range of 600.degree. to 2200.degree. C. in a nonoxidizing atmosphere to obtain silicon carbide;D. molding this silicon carbide powder; andE. sintering the thus molded body in a nonoxidizing atmosphere.
    Type: Grant
    Filed: January 27, 1978
    Date of Patent: February 22, 1983
    Assignee: Kyoto Ceramic Kabushiki Kaisha
    Inventors: Kazunori Koga, Saburo Nagano, Shinichiro Mizuta, Masayoshi Nakayama
  • Patent number: 4105455
    Abstract: A method of producing a sintered silicon carbide body high in density, flexural strength and purity at elevated temperatures from polycarbosilanes is disclosed. The method involves the following steps:(A) polymerizing organosilicon compounds to yield specific polycarbosilanes which are insoluble in solvents and unmeltable i.e. the polycarbosilanes being higher in melting temperature or in softening temperature than in thermal decomposition temperature;(B) pulverizing the insoluble and unmeltable polycarbosilanes so as to form a powder;(C) applying heat with or without the use of pressure to the powder charged into a hot press mold in a nonoxidizing atmosphere to thereby decompose the same thermally into silicon carbide and sintering the silicon carbide under pressure.
    Type: Grant
    Filed: August 12, 1977
    Date of Patent: August 8, 1978
    Assignee: Kyoto Ceramic Kabushiki Kaisha
    Inventors: Kazunori Koga, Saburo Nagano