Abstract: An electrochemical device includes an element body, an exterior sheet, a seal part, and a leading terminal. The element body includes a pair of inner electrodes laminated to sandwich a separator sheet. The exterior sheet covers the element body. The seal part seals a peripheral part of the exterior sheet for immersing the element body in an electrolyte. The leading terminal extends outward from the seal part of the exterior sheet. The exterior sheet includes a front sheet and a back sheet. The front sheet includes a front-side metal sheet. The back sheet includes a back-side metal sheet.

Abstract: An electrochemical device, which can be thin enough to be built into a thin electronic device, and a method for manufacturing the same. The electrochemical device has: an element body on which a pair of internal electrodes are laminated so as to sandwich a separator sheet; an outer sheet covering the element body; sealing parts for sealing the peripheral edge of the outer sheet so that the element body is immersed in an electrolyte solution; and lead terminals electrically connected to either one of internal electrodes and leading out from the sealing parts of the outer sheet. At least a portion of a resin tape constituting the sealing parts, from which the lead terminals lead out, is thermally fused to an inside layer made from resin, which is present on the inner face of the outer sheet, in a position that does not overlap with the internal electrodes.

Abstract: An electrochemical device which includes: an element main body wherein a pair of internal electrodes are laminated so as to sandwich a separator sheet there between; an outer casing sheet that covers the element main body; sealing parts that hermetically seal the peripheral part of the outer casing sheet so that the element main body is immersed in an electrolyte solution; and lead terminals that are electrically connected to the internal electrodes respectively and are led out from the sealing parts of the outer casing sheet to the outside. A resin inner layer that is present in the inner surface of the outer casing sheet is provided with a fusion bonding part for separators, which partially bonds a part of the separator sheet to the inner surface of the outer casing sheet.

Abstract: A powder removing apparatus according to an embodiment includes a first tank in which a powder produced by burning a process gas is collected; a duct with a hollow to which the powder is carried and to which a flow of a liquid is supplied, the duct that is connected to the first tank and that allows the powder to flow from the hollow into the first tank by the flow of the liquid; and a pump that supplies the liquid to the hollow.

Abstract: An electrochemical device includes an element body, an exterior sheet, a seal part, and a leading terminal. The element body includes a pair of inner electrodes laminated to sandwich a separator sheet. The exterior sheet covers the element body. The seal part seals a peripheral part of the exterior sheet for immersing the element body in an electrolyte. The leading terminal extends outward from the seal part of the exterior sheet. The exterior sheet includes a front sheet and a back sheet. The front sheet includes a front-side metal sheet. The back sheet includes a back-side metal sheet.

Abstract: An electrochemical device excellent in connection reliability is provided. An EDLC 2 includes: an element body 10 in which a pair of inner electrodes 16, 26 are laminated so as to sandwich a separator sheet 11; an exterior sheet 4 covering the element body 10; seal parts 40, 42 sealing peripheral parts of the exterior sheet 4 so that the element body 10 is immersed in an electrolyte; and lead terminals 18, 28 extending outward from the seal parts 40, 42 of the exterior sheet 4. At least one surface of the lead terminals 18, 28 is etched so as to form unevenness 180, 280.

Abstract: An electrochemical device, which can be thin enough to be built into a thin electronic device, and a method for manufacturing the same. The electrochemical device has: an element body on which a pair of internal electrodes are laminated so as to sandwich a separator sheet; an outer sheet covering the element body; sealing parts for sealing the peripheral edge of the outer sheet so that the element body is immersed in an electrolyte solution; and lead terminals electrically connected to either one of internal electrodes and leading out from the sealing parts of the outer sheet. At least a portion of a resin tape constituting the sealing parts, from which the lead terminals lead out, is thermally fused to an inside layer made from resin, which is present on the inner face of the outer sheet, in a position that does not overlap with the internal electrodes.

Abstract: An electrochemical device which includes: an element main body wherein a pair of internal electrodes are laminated so as to sandwich a separator sheet there between; an outer casing sheet that covers the element main body; sealing parts that hermetically seal the peripheral part of the outer casing sheet so that the element main body is immersed in an electrolyte solution; and lead terminals that are electrically connected to the internal electrodes respectively and are led out from the sealing parts of the outer casing sheet to the outside. A resin inner layer that is present in the inner surface of the outer casing sheet is provided with a fusion bonding part for separators, which partially bonds a part of the separator sheet to the inner surface of the outer casing sheet.

Abstract: The present invention is intended to provide a novel molecule that inhibits the expression of the periostin gene that is effective in treatment of diseases caused by the expression of periostin except for eye diseases. A drug for a disease caused by the expression of periostin except for an eye disease includes, as an expression inhibitory sequence for the periostin gene, a nucleic acid molecule including a nucleotide that has a base sequence represented by any one of SEQ ID NOs: 1 to 19. The drug for disease according to the present invention can inhibit the expression of the periostin gene. Thus, it can be used for treatment of diseases (except for eye diseases) caused by the expression of the periostin gene, specifically skin diseases, respiratory diseases, gastrointestinal diseases, and the like.

Abstract: It is an object of the present invention to provide a method of manufacturing a semiconductor device that reduces the deterioration in processed configuration and the pattern roughness of a film to be processed, and is close to the original design and applicable to a dual damascene step and the like. The manufacturing method comprises a processing mask layer forming step of forming a processing mask layer (a lower organic film and a middle layer) comprising at least one film, and hardening treatment for at least one film of the processing mask layer by applying a film and heat hardening treatment; a processing mask layer etching step of applying a resist film for exposure to the processing mask layer, exposing and developing it to form a resist pattern, and etching the processing mask layer using the resist pattern as a mask; and a film to be processed etching step of etching the film to be processed using the pattern of the processing mask layer formed at the processing mask layer etching step as a mask.

Abstract: It is an object of the present invention to provide a method of manufacturing a semiconductor device that reduces the deterioration in processed configuration and the pattern roughness of a film to be processed, and is close to the original design and applicable to a dual damascene step and the like. The manufacturing method comprises a processing mask layer forming step of forming a processing mask layer (a lower organic film and a middle layer) comprising at least one film, and hardening treatment for at least one film of the processing mask layer by applying a film and heat hardening treatment; a processing mask layer etching step of applying a resist film for exposure to the processing mask layer, exposing and developing it to form a resist pattern, and etching the processing mask layer using the resist pattern as a mask; and a film to be processed etching step of etching the film to be processed using the pattern of the processing mask layer formed at the processing mask layer etching step as a mask.

Abstract: A silicon oxide film is formed to cover a polysilicon plug. A bowing shaped hole is formed. A barrier metal and a metal film are formed, which are successively subjected to prescribed anisotropic etching. Here, because of the RIE-lag effect, the etch rate of the barrier metal becomes smaller in the portion between the side surface of the hole and the metal film than in the other portions, preventing the exposure of the surface of the polysilicon plug. Thus, a semiconductor device ensuring a good electrical connection of metal interconnections is obtained.

Abstract: A resist pattern is formed on stacked first and second conductive films. After second conductive film is patterned, the patterning of first conductive film follows without removing the remaining resist pattern. Resist pattern is completely removed by etching before the patterning of first conductive film is completed. Thereafter, etching is continued using second conductive film as a mask, and the patterning of first conductive film is completed. Thus, a method of forming a pattern for the semiconductor device in which minute interconnection pattern having a stacked structure is formed without an increase in the number of processing steps can be provided.

Abstract: Described is a semiconductor device having a buried multilayer wiring structure, in which there is ensured good conductivity among a plurality of wiring layers. A lower wiring pattern is formed from conductive material, and an upper wiring pattern is formed from conductive material. Insulating layers are provided between the lower wiring pattern and the upper wiring pattern. A connection section is formed so as to penetrate through the insulating layers to thereby establish continuity between the lower and upper wiring patterns, as well as to have a greater cross-sectional area at the end facing the upper wiring pattern and a smaller cross-sectional area at the end facing the lower wiring pattern.