Patents by Inventor Kazuo Fujiwara
Kazuo Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9807369Abstract: A 3D imaging apparatus includes: a first image capturing camera generating a base image to be used for obtaining a first range image showing a three-dimensional character of an object; a second image capturing camera generating a reference image to be used for obtaining the first range image; a stereo matching unit searching for corresponding pixels between the base image and the reference image, and generating a first range image by calculating a disparity between the corresponding pixels; and a light source emitting to the object infrared light whose intensity is modulated. The first image capturing camera further generates a second range image by receiving a reflected light in synchronization with the modulated intensity. The reflected light is the infrared light reflected off the object. The second range image includes range information on a range between a point of reflection off the object and the first imaging unit.Type: GrantFiled: October 2, 2013Date of Patent: October 31, 2017Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Manabu Usuda, Kazutoshi Onozawa, Kazuo Fujiwara
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Patent number: 9287423Abstract: A solid-state imaging device in which a plurality of pixels are two-dimensionally arranged includes a silicon layer; a plurality of photodiodes which are formed in the silicon layer to correspond to the pixels and generate signal charges by performing photoelectric conversion on incident light; and a plurality of color filters formed above the silicon layer to correspond to the plurality of the pixels. A protrusion is formed in a region on a side of the silicon layer between adjacent ones of the color filters wherein the protrusion has a refractive index lower than refractive indices of the adjacent ones of the color filters and, each of the color filters is in contact with the adjacent ones of the color filters, above the protrusion.Type: GrantFiled: November 13, 2012Date of Patent: March 15, 2016Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Mitsuyoshi Mori, Toru Okino, Motonori Ishii, Shigeru Saitou, Yusuke Otake, Kazuo Fujiwara, Yasuhiro Shimada, Yutaka Hirose
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Patent number: 9048027Abstract: A fluid dispersion obtained by mixing oxide particles and water is sprayed to a raw aluminum foil from a direction opposite to a travelling direction of the raw aluminum foil while the raw aluminum foil is allowed to travel. In this way, a roll-pressed mark of the raw aluminum foil is eliminated, and thus aluminum foil for aluminum electrolytic capacitor electrode is produced. Pyramidal-shaped recesses each having an acute angle tip are present all over a surface of the aluminum foil.Type: GrantFiled: August 14, 2013Date of Patent: June 2, 2015Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Masami Tsubaki, Mitsuhisa Yoshimura, Hayato Kato, Katsuyoshi Shingu, Tatsushi Ota, Kazuo Fujiwara
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Publication number: 20140028804Abstract: A 3D imaging apparatus includes: a first image capturing camera generating a base image to be used for obtaining a first range image showing a three-dimensional character of an object; a second image capturing camera generating a reference image to be used for obtaining the first range image; a stereo matching unit searching for corresponding pixels between the base image and the reference image, and generating a first range image by calculating a disparity between the corresponding pixels; and a light source emitting to the object infrared light whose intensity is modulated. The first image capturing camera further generates a second range image by receiving a reflected light in synchronization with the modulated intensity. The reflected light is the infrared light reflected off the object. The second range image includes range information on a range between a point of reflection off the object and the first imaging unit.Type: ApplicationFiled: October 2, 2013Publication date: January 30, 2014Applicant: Panasonic CorporationInventors: Manabu USUDA, Kazutoshi ONOZAWA, Kazuo FUJIWARA
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Publication number: 20130326849Abstract: A fluid dispersion obtained by mixing oxide particles and water is sprayed to a raw aluminum foil from a direction opposite to a travelling direction of the raw aluminum foil while the raw aluminum foil is allowed to travel. In this way, a roll-pressed mark of the raw aluminum foil is eliminated, and thus aluminum foil for aluminum electrolytic capacitor electrode is produced. Pyramidal-shaped recesses each having an acute angle tip are present all over a surface of the aluminum foil.Type: ApplicationFiled: August 14, 2013Publication date: December 12, 2013Applicant: Panasonic CorporationInventors: Masami Tsubaki, Mitsuhisa Yoshimura, Hayato Kato, Katsuyoshi Shingu, Tatsushi Ota, Kazuo Fujiwara
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Patent number: 8115241Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.Type: GrantFiled: September 18, 2008Date of Patent: February 14, 2012Assignee: Panasonic CorporationInventors: Mitsuyoshi Mori, Mikiya Uchida, Kazuo Fujiwara, Takumi Yamaguchi
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Publication number: 20110291162Abstract: Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.Type: ApplicationFiled: August 4, 2011Publication date: December 1, 2011Applicant: PANASONIC CORPORATIONInventors: Mitsuyoshi MORI, Toru Okino, Yusuke Otake, Kazuo Fujiwara, Hitomi Fujiwara
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Publication number: 20110284929Abstract: In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.Type: ApplicationFiled: August 4, 2011Publication date: November 24, 2011Applicant: PANASONIC CORPORATIONInventors: Mitsuyoshi MORI, Kazuo Fujiwara, Toru Okino, Yusuke Otake, Hitomi Fujiwara
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Publication number: 20110159312Abstract: A fluid dispersion obtained by mixing oxide particles and water is sprayed to a raw aluminum foil from a direction opposite to a travelling direction of the raw aluminum foil while the raw aluminum foil is allowed to travel. In this way, a roll-pressed mark of the raw aluminum foil is eliminated, and thus aluminum foil for aluminum electrolytic capacitor electrode is produced. Pyramidal-shaped recesses each having an acute angle tip are present all over a surface of the aluminum foil.Type: ApplicationFiled: November 23, 2010Publication date: June 30, 2011Applicant: PANASONIC CORPORATIONInventors: Masami Tsubaki, Mitsuhisa Yoshimura, Hayato Kato, Katsuyoshi Shingu, Tatsushi Ota, Kazuo Fujiwara
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Publication number: 20110115955Abstract: An object of the present invention is to provide a solid-state image device that can effectively dissipate heat. In order to attain the object, the solid-state image device of the present invention includes non-through heat dissipation portions (7) provided on a semiconductor substrate (2). The non-through heat dissipation portion (7) is made up of a non-through hole and a metal embedded in the non-through hole. The non-through hole has one open end on one of the surfaces of the semiconductor substrate (2), extends from the one surface toward the other surface of the semiconductor substrate (2), and has the other end between the surfaces of the semiconductor substrate (2). The non-through heat dissipation portions (7) act as heat dissipation paths.Type: ApplicationFiled: January 14, 2011Publication date: May 19, 2011Applicant: PANASONIC CORPORATIONInventors: Tomoo Okutani, Kazuo Fujiwara, Hitomi Fujiwara
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Patent number: 7800144Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.Type: GrantFiled: September 18, 2008Date of Patent: September 21, 2010Assignee: Panasonic CorporationInventors: Mitsuyoshi Mori, Mikiya Uchida, Kazuo Fujiwara, Takumi Yamaguchi
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Patent number: 7557908Abstract: An apparatus for determining the authenticity includes a light-emitting unit that emits a light including the first wavelength to the paper sheet; a first blocking unit that is arranged between the light-emitting unit and the paper sheet, and blocks off a light of a wavelength longer than the first wavelength; a light-receiving unit that receives a light including a second wavelength emitted from the paper sheet; a second blocking unit that is arranged between the light-receiving unit and the paper sheet, and blocks off a light of a wavelength shorter than the second wavelength. Finally, an authenticity determining unit determines an authenticity of the paper sheet based on the light received by the light-receiving unit.Type: GrantFiled: August 27, 2008Date of Patent: July 7, 2009Assignee: Glory Ltd.Inventors: Keiji Nagasaka, Kazuo Fujiwara
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Publication number: 20090021626Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.Type: ApplicationFiled: September 18, 2008Publication date: January 22, 2009Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Mitsuyoshi MORI, Mikiya Uchida, Kazuo Fujiwara, Takumi Yamaguchi
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Publication number: 20090014759Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.Type: ApplicationFiled: September 18, 2008Publication date: January 15, 2009Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Mitsuyoshi MORI, Mikiya Uchida, Kazuo Fujiwara, Takumi Yamaguchi
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Patent number: 7436012Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.Type: GrantFiled: January 20, 2006Date of Patent: October 14, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Mitsuyoshi Mori, Mikiya Uchida, Kazuo Fujiwara, Takumi Yamaguchi
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Patent number: 7172344Abstract: Precise V-grooves allowing an optical fiber to project are formed in respective main surfaces of an upper plane substrate and a lower plane substrate. The optical fiber is mounted on one plane substrate, and a multi-layer film filter 2 is inserted into a filter insertion groove 1 crossing the precise V-groove in the main surface of the other plane substrate. Then, using the projecting optical fiber and the other precise V-groove as a guide rail, two plane substrates grapple the multi-layer film filter to fix and mount the filter. In an optical filter module obtained in this manner, a process of adjusting an optical axis between input/output optical fibers is eliminated, and displacement of the inserted optical filter is reduced.Type: GrantFiled: October 2, 2002Date of Patent: February 6, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazunari Nishihara, Kazuo Fujiwara, Kanji Kato, Mikio Degawa, Tetsuro Shimamura
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Publication number: 20060163628Abstract: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.Type: ApplicationFiled: January 20, 2006Publication date: July 27, 2006Inventors: Mitsuyoshi Mori, Mikiya Uchida, Kazuo Fujiwara, Takumi Yamaguchi
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Patent number: 7039279Abstract: An optical filter module of the present invention has a flat substrate, an optical path formed on the flat substrate; a filter insertion groove provided, crossing the optical path, on the flat substrate; a multilayer filter inserted, dividing the optical path, into the filter insertion groove; and a pair of covers disposed on the flat substrate so as to sandwich the multilayer filter. The present invention enables the omission of the process of adjustment of the optical axis, thus achieving high operability. At the same time, the present invention ensures fixing and mounting of the multilayer filter even if the multilayer filter is warped.Type: GrantFiled: October 2, 2002Date of Patent: May 2, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Naoki Tatehata, Kazunari Nishihara, Tetsuro Shimamura, Kazuo Fujiwara
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Publication number: 20040120650Abstract: An optical filter module of the present invention has a flat substrate, an optical path formed on the flat substrate; a filter insertion groove provided, crossing the optical path, on the flat substrate; a multilayer filter inserted, dividing the optical path, into the filter insertion groove; and a pair of covers disposed on the flat substrate so as to sandwich the multilayer filter. The present invention enables the omission of the process of adjustment of the optical axis, thus achieving high operability. At the same time, the present invention ensures fixing and mounting of the multilayer filter even if the multilayer filter is warped.Type: ApplicationFiled: September 11, 2003Publication date: June 24, 2004Inventors: Naoki Tatehata, Kazunari Nishihara, Tetsuro Shimamura, Kazuo Fujiwara
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Publication number: 20040027705Abstract: Precise V-grooves allowing an optical fiber to project are formed in respective main surfaces of an upper plane substrate and a lower plane substrate. The optical fiber is mounted on one plane substrate, and a multi-layer film filter 2 is inserted into a filter insertion groove 1 crossing the precise V-groove in the main surface of the other plane substrate. Then, using the projecting optical fiber and the other precise V-groove as a guide rail, two plane substrates grapple the multi-layer film filter to fix and mount the filter. In an optical filter module obtained in this manner, a process of adjusting an optical axis between input/output optical fibers is eliminated, and displacement of the inserted optical filter is reduced.Type: ApplicationFiled: August 14, 2003Publication date: February 12, 2004Inventors: Kazunari Nishihara, Kazuo Fujiwara, Kanji Kato, Mikio Degawa, Tetsuro Shimamura