Patents by Inventor Kazuo Kobayashi

Kazuo Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210217950
    Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.
    Type: Application
    Filed: March 31, 2021
    Publication date: July 15, 2021
    Inventors: Hiroto Sugahara, Kazuo Kobayashi
  • Patent number: 10978634
    Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: April 13, 2021
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventors: Hiroto Sugahara, Kazuo Kobayashi
  • Publication number: 20210010158
    Abstract: Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved.
    Type: Application
    Filed: April 29, 2020
    Publication date: January 14, 2021
    Applicant: Mitsubishi Electric Corporation
    Inventors: Masashi SAKAI, Shinichiro KATSUKI, Kazuo KOBAYASHI, Yasunari HINO
  • Publication number: 20190280182
    Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.
    Type: Application
    Filed: May 20, 2019
    Publication date: September 12, 2019
    Inventors: Hiroto Sugahara, Kazuo Kobayashi
  • Patent number: 10340439
    Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: July 2, 2019
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventors: Hiroto Sugahara, Kazuo Kobayashi
  • Publication number: 20170160012
    Abstract: A semiconductor annealing apparatus includes: a chamber; a tube provided inside the chamber; a wafer boat provided inside the tube so as to be able to advance into and retreat out of the tube; a loading area in which the wafer boat is positioned when the wafer boat retreats out of the tube; hydrocarbon supply means for supplying hydrocarbon gas into the tube; heating means for heating the inside of the tube; and oxygen supply means for supplying oxygen into the tube. The tube is made of sapphire or is made of SiC and formed by all-CVD, and wherein the wafer boat is made of sapphire or is made of SiC and formed by all-CVD.
    Type: Application
    Filed: September 8, 2014
    Publication date: June 8, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kazuo KOBAYASHI, Masaaki IKEGAMI
  • Patent number: 9505216
    Abstract: A liquid ejecting device has a fluid passage structure formed with multiple nozzles and multiple passages respectively communicating with the multiple nozzles. The fluid passage structure has a nozzle plate formed with the multiple nozzles, and a passage body laminated and bonded with the nozzle plate, the passage body being formed with multiple individual passages respectively communicating with the multiple nozzles, the passage body being formed with provided with multiple convex parts made of a material harder than the nozzle plate. The multiple convex parts protruding toward a nozzle plate side, and the multiple convex parts are covered by the nozzle plate. Further, the multiple convex parts protrude with respect to a liquid ejection surface on which ejection openings of the multiple nozzles arranged.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: November 29, 2016
    Assignee: BROTHER KOGYO KABUSHIKI KAISHA
    Inventors: Shohei Koide, Atsushi Ito, Kazuo Kobayashi, Hiroaki Hiraide
  • Patent number: 9455197
    Abstract: When a gate insulating film is formed on a silicon carbide substrate, the silicon carbide substrate is first oxidized with an oxidation reactant gas to form the gate insulating film on the surface of the silicon carbide substrate. The silicon carbide substrate on which the gate insulating film has been formed is nitrided with a nitriding reactant gas. The oxidation and the nitriding are performed continuously in the same diffusion furnace while a temperature of 1200° C. to 1300° C. inclusive is maintained.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: September 27, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Hideaki Yuki, Kazuo Kobayashi, Yoichiro Tarui
  • Patent number: 9394412
    Abstract: A composite cured silicone powder comprising: (A) a cured silicone powder having an average particle size of 0.1 to 500 ?m, (B) an inorganic fine powder coated on the surface of said cured silicone powder and (C) a monohydric or polyhydric alcohol with a boiling point of at least 150° C. coating on the surface of component (A) and/or component (B). The composite cured silicone powder that has an excellent flowability, hydrophilicity, and dispersibility. And, this invention also relates to a production method of the composite, which is characterized by mixing components (A) to (C) under the condition of mechanical shearing.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: July 19, 2016
    Assignee: DOW CORNING TORAY CO., LTD.
    Inventors: Kazuo Kobayashi, Ryuji Tachibana, Tadashi Takimoto
  • Publication number: 20160190425
    Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.
    Type: Application
    Filed: March 4, 2016
    Publication date: June 30, 2016
    Inventors: Hiroto Sugahara, Kazuo Kobayashi
  • Publication number: 20160181160
    Abstract: When a gate insulating film is formed on a silicon carbide substrate, the silicon carbide substrate is first oxidized with an oxidation reactant gas to form the gate insulating film on the surface of the silicon carbide substrate. The silicon carbide substrate on which the gate insulating film has been formed is nitrided with a nitriding reactant gas. The oxidation and the nitriding are performed continuously in the same diffusion furnace while a temperature of 1200° C. to 1300° C. inclusive is maintained.
    Type: Application
    Filed: September 14, 2015
    Publication date: June 23, 2016
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hideaki YUKI, Kazuo KOBAYASHI, Yoichiro TARUI
  • Patent number: 9302467
    Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: April 5, 2016
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventors: Hiroto Sugahara, Kazuo Kobayashi
  • Publication number: 20160052269
    Abstract: A liquid ejecting device has a fluid passage structure formed with multiple nozzles and multiple passages respectively communicating with the multiple nozzles. The fluid passage structure has a nozzle plate formed with the multiple nozzles, and a passage body laminated and bonded with the nozzle plate, the passage body being formed with multiple individual passages respectively communicating with the multiple nozzles, the passage body being formed with provided with multiple convex parts made of a material harder than the nozzle plate. The multiple convex parts protruding toward a nozzle plate side, and the multiple convex parts are covered by the nozzle plate. Further, the multiple convex parts protrude with respect to a liquid ejection surface on which ejection openings of the multiple nozzles arranged.
    Type: Application
    Filed: August 14, 2015
    Publication date: February 25, 2016
    Applicant: BROTHER KOGYO KABUSHIKI KAISHA
    Inventors: Shohei KOIDE, Atsushi ITO, Kazuo KOBAYASHI, Hiroaki HIRAIDE
  • Patent number: 9159585
    Abstract: A method of manufacturing a semiconductor device according to the present invention includes the steps of (b) forming, on a back face of a dummy substrate and back faces of a plurality of semiconductor substrates, inorganic films having such thicknesses as to be resistant to a temperature of a thermal oxidizing treatment or a heat treatment and to sufficiently decrease an amount of oxidation or reducing gaseous species to reach the back faces of the dummy substrate and the plurality of semiconductor substrates, (c) disposing the dummy substrate and the plurality of semiconductor substrates in a lamination with surfaces turned in the same direction at an interval from each other, and (d) carrying out a thermal oxidizing treatment or post annealing over the surfaces of the semiconductor substrates in an oxidation gas atmosphere or a reducing gas atmosphere after the steps (b) and (c).
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: October 13, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventors: Toshikazu Tanioka, Yoichiro Tarui, Kazuo Kobayashi, Hideaki Yuki, Yosuke Setoguchi
  • Patent number: 9153505
    Abstract: A method for manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) implanting an impurity into a surface layer of an SiC substrate at a concentration of 1×1020 cm?3 or higher, (b) forming a graphite film on a surface of the SiC substrate after the step (a), (c) activating the impurity by annealing the SiC substrate after the step (b), (d) removing the graphite film after the step (c), (e) oxidizing the surface of the SiC substrate to form an oxide film after the step (d), (f) removing the oxide film, and (g) measuring resistance of the SiC substrate by a four-point probe method after the step (f).
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: October 6, 2015
    Assignee: Mitsubishi Electric Corporation
    Inventor: Kazuo Kobayashi
  • Publication number: 20150072448
    Abstract: A method for manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) implanting an impurity into a surface layer of an SiC substrate at a concentration of 1×1020 cm?3 or higher, (b) forming a graphite film on a surface of the SiC substrate after the step (a), (c) activating the impurity by annealing the SiC substrate after the step (b), (d) removing the graphite film after the step (c), (e) oxidizing the surface of the SiC substrate to form an oxide film after the step (d), (f) removing the oxide film, and (g) measuring resistance of the SiC substrate by a four-point probe method after the step (f).
    Type: Application
    Filed: April 25, 2014
    Publication date: March 12, 2015
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Kazuo KOBAYASHI
  • Patent number: 8945265
    Abstract: A compressor compressing a fluid including lubricating oil includes, on the discharge side thereof, a first separation chamber for separating the lubricating oil by generating a swirling flow in the fluid. The first separation chamber includes: a circumferential wall; an inflow port that is formed in the circumferential wall and causes the fluid to flow into the first separation chamber; and a guiding plate extending from the circumferential wall. The guiding plate extends so as to face the inflow port in a direction where the fluid flows from the inflow port into the first separation chamber, and so as to deflect the fluid flow from the inflow port to guide it along an inner circumferential surface of the circumferential wall.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: February 3, 2015
    Assignee: Kabushiki Kaisha Toyota Jidoshokki
    Inventors: Akihiro Nakashima, Shinichi Sato, Akio Saiki, Kazuo Kobayashi
  • Publication number: 20140333701
    Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.
    Type: Application
    Filed: April 9, 2014
    Publication date: November 13, 2014
    Applicant: BROTHER KOGYO KABUSHIKI KAISHA
    Inventors: Hiroto Sugahara, Kazuo Kobayashi
  • Patent number: 8882482
    Abstract: A compressor has auxiliary and main oil reservoir chambers that retain lubricant oil that is separated from refrigerant in an oil separation chamber. A part of the auxiliary oil reservoir chamber is defined by a peripheral wall of the oil separation chamber. An introducing passage for introducing lubricant oil in the oil separation chamber to the auxiliary oil reservoir chamber is formed in the peripheral wall. The inlet of the introducing passage opens to the oil separation chamber on the inner surface of the peripheral wall. The outlet of the introducing passage opens to the auxiliary oil reservoir chamber. The main oil reservoir chamber is located below the auxiliary oil reservoir chamber in the direction of gravity. A drain port for draining lubricant oil in the auxiliary oil reservoir chamber to the main oil reservoir chamber is formed in a bottom wall of the auxiliary oil reservoir chamber.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toyota Jidoshokki
    Inventors: Tsubasa Mitsui, Shinichi Sato, Kazuo Kobayashi, Akio Saiki, Akihiro Nakashima, Shinsuke Asou
  • Patent number: 8829141
    Abstract: This invention relates to a silicone oil emulsion that contains cross-linked silicone particles in drops of silicone oil which have an average particle diameter of 0.1 to 500 ?m and are dispersed in water, wherein the silicone oil contains epoxy groups, acryl groups, methacryl groups, silicon-bonded alkoxy groups, or silicon-bonded hydroxyl groups but is free of silicon-bonded hydrogen atoms and alkenyl groups, said cross-linked silicone particles is formed by a hydrosilation reaction. Furthermore, this invention also relates to a silicone oil composition obtained by removing water from said emulsion.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: September 9, 2014
    Assignee: Dow Corning Toray Co., Ltd.
    Inventors: Yoshitsugu Morita, Kazuo Kobayashi