Abstract: A pellicle is contaminated with dust or the like for various reasons during the production thereof. Especially, there is a problem that the risk that the dust or the like is attached is high during trimming or various other processes performed on a pellicle film. The present invention provides a method for producing a pellicle for EUV that decreases the attachment of dust or the like. A method for producing a pellicle includes forming a pellicle film on a substrate; trimming the substrate; and removing at least a part of the substrate after trimming the substrate. Before the part of the substrate is removed, at least particles attached to a surface of the pellicle film are removed.

Abstract: A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.

Abstract: Provided is a support frame for pellicles which includes an aluminum alloy-made frame body with a pellicle film bonded to a front surface of the frame body, and with a glass substrate bonded to a back surface of the frame body. A front-side recessed groove extending in a circumferential direction of the frame body is formed on the front surface of the frame body, and a front-side suction hole extending from an outer peripheral surface of the frame body to an inner surface of the front-side recessed groove is formed on the frame body.

Abstract: The present invention addresses the problem of providing a pellicle which has high EUV transmittance and high strength, while being not susceptible to damage by heat. In order to solve the above-mentioned problem, the present invention provides a pellicle which comprises a pellicle film that has a refractive index (n) of light having a wavelength of 550 nm of 1.9-5.0 and a pellicle frame to which the pellicle film is bonded. The pellicle film has a composition that contains 30-100% by mole of carbon and 0-30% by mole of hydrogen. The intensity ratio of the 2D-band to the G-band, namely (intensity in 2D-band)/(intensity in G-band) is 1 or less, or alternatively, the intensity in the 2D-band and the intensity in the G-band are 0 in the Raman spectrum of the pellicle film.

Abstract: A pellicle frame containing a frame body, the frame body having a groove formed in one end surface of the frame body, the one end surface being an end surface in a thickness direction of the frame body that is located at a side configured to support a pellicle membrane, and a through-hole that penetrates through a portion between an outer circumferential surface of the frame body and a wall surface of the groove formed in the one end surface.

Abstract: Provided are a pellicle for extreme ultraviolet light lithography, a production method thereof, and an exposure method. A pellicle according to the present invention includes a first frame having a pellicle film located thereon; a second frame including a thick portion including a first surface carrying a surface of the first frame opposite to a surface on which the pellicle film is located, and also including a second surface connected with the first surface and carrying a side surface of the first frame, the second frame enclosing the pellicle film and the first frame; a through-hole provided in the thick portion of the second frame; and a filter located on an outer side surface of the second frame and covering the through-hole, the outer side surface crossing the surface of the first frame on which the pellicle film is located.

Abstract: Provided are a pellicle for extreme ultraviolet light lithography, a method for producing the same, and an exposure method. A pellicle according to the present invention includes a first frame having a pellicle film located thereon; a second frame supporting the first frame; a through-hole running through the first frame; and a filter covering the through-hole on the side of a surface of the first frame on which the pellicle film is located. The through-hole may run through the pellicle film; and the filter may be located on the pellicle film. The filter may be located, adjacent to the pellicle film, on the first frame.

Abstract: A pellicle membrane includes a film consisting of an organic material and an inorganic material, wherein a region containing an organic material and a region consisting of an inorganic material are present in the same plane of the film, and wherein at least a central portion of the film is a region consisting of an inorganic material, and at least a peripheral edge portion of the film is a region containing an organic material.

Abstract: The present invention addresses the problem of providing a pellicle which has high EUV transmittance and high strength, while being not susceptible to damage by heat. In order to solve the above-mentioned problem, the present invention provides a pellicle which comprises a pellicle film that has a refractive index (n) of light having a wavelength of 550 nm of 1.9-5.0 and a pellicle frame to which the pellicle film is bonded. The pellicle film has a composition that contains 30-100% by mole of carbon and 0-30% by mole of hydrogen. The intensity ratio of the 2D-band to the G-band, namely (intensity in 2D-band)/(intensity in G-band) is 1 or less, or alternatively, the intensity in the 2D-band and the intensity in the G-band are 0 in the Raman spectrum of the pellicle film.

Abstract: Provided is a method for manufacturing a composite body, the method containing: a composition preparation process of preparing a composition that contains a polymer having a cationic functional group and having a weight average molecular weight of from 2,000 to 1,000,000, and that has a pH of from 2.0 to 11.0; a composite member preparation process of preparing a composite member that includes a member A and a member B, a surface of the member B having a defined isoelectric point, and that satisfies a relationship: the isoelectric point of a surface of the member B< the pH of the composition<the isoelectric point of a surface of the member A; and an application process of applying the composition to the surface of the member A and the surface of the member B included in the composite member.

Abstract: In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.

Abstract: A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.

Abstract: The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25° C. of 6 or lower.

Abstract: In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.

Abstract: Disclosed is a composition comprising a hydrolysate of an alkoxysilane compound, a hydrolysate of a siloxane compound represented by Formula (1), a surfactant, and an element having an electronegativity of 2.5 or less. In Formula (1), RA and RB independently represent a hydrogen atom, a phenyl group, —CaH2a+1, —(CH2)b(CF2)cCF3 or —CdH2d?1, RA and RB are not both hydrogen atoms simultaneously, RC and RD independently represent a single bond that links a silicon atom and an oxygen atom to form a cyclic siloxane structure, or each independently represent a hydrogen atom, a phenyl group, —CaH2a+1, —(CH2)b(CF2)cCF3, or —CdH2d?1, a represents an integer of 1 to 6, b represents an integer of 0 to 4, c represents an integer of 0 to 10, d represents an integer of 2 to 4, and n represents an integer of 3 or greater.

Abstract: The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a semiconductor sealing layer is formed by applying, to at least a portion of a surface of a semiconductor substrate, a semiconductor sealing composition that includes a resin having a cationic functional group and a weight average molecular weight of from 2,000 to 600,000, wherein a content of sodium and a content of potassium are 10 mass ppb or less on an elemental basis, respectively; and, subsequently, a rinsing process in which the surface of the semiconductor substrate on which the semiconductor sealing layer has been formed is rinsed with a rinse having a pH at 25° C. of 6 or lower.

Abstract: Disclosed is a precursor composition comprising: a compound selected from a compound represented by the formula: Si(OR1)4 and a compound represented by the formula Ra(Si)(OR2)4?a (in the formulas R1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R2 represents a monovalent organic group; and a is an integer ranging from 1 to 3, provided that R, R1 and R2 may be the same or different from one another) a thermally degradable organic compound; an element having a catalyst activity; urea; and the like. A porous thin film produced from the precursor composition is irradiated with ultraviolet ray, and then subjected to gas-phase reaction with a hydrophobic compound. A porous thin film thus prepared can be used for the manufacture of a semiconductor device.

Abstract: A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.

Abstract: The invention provides a composition for sealing a semiconductor, the composition being able to form a thin resin layer, suppress the diffusion of a metal component to a porous interlayer dielectric layer, and exhibit superior adherence with respect to an interconnection material. The composition for sealing a semiconductor contains a resin having two or more cationic functional groups and a weight-average molecular weight of from 2,000 to 100,000; contains sodium and potassium each in an amount based on element content of not more than 10 ppb by weight; and has a volume average particle diameter, measured by a dynamic light scattering method, of not more than 10 nm.

Abstract: A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided. A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.