Abstract: The present invention provides an anion exchange membrane that has low electrical resistance when used in electrodialysis, is produced without an increase in cost, and is excellent in selective permeability to monovalent anions, and a method for producing the same. The anion exchange membrane has a tertiary amino group and a quaternary ammonium group as functional groups, such that an intensity ratio of the tertiary amino group to the quaternary ammonium group is 1.0 or more as measured by X-ray photoelectron spectroscopy on a surface of the anion exchange membrane having the tertiary amino group and the quaternary ammonium group as the functional groups.

Abstract: An ion exchange membrane having a structure that an ion exchange resin is filled in spaces of a porous base film, the porous base film has a structure that at least two porous olefin resin layers are laminated with a bonding strength of 100 gf/cm or more to less than 700 gf/cm and a Gurley air permeance of 500 sec/100 ml or less in terms of a 100 ?m thick film. In this ion exchange membrane, base film has high air permeability though it has a multi-layer structure that a plurality of porous resin films are bonded together, and therefore a rise in electric resistance caused by the lamination of the base sheets is effectively suppressed.

Abstract: An ion exchange membrane having a structure that an ion exchange resin is filled in spaces of a porous base film, the porous base film has a structure that at least two porous olefin resin layers are laminated with a bonding strength of 100 gf/cm or more to less than 700 gf/cm and a Gurley air permeance of 500 sec/100 ml or less in terms of a 100 ?m thick film. In this ion exchange membrane, base film has high air permeability though it has a multi-layer structure that a plurality of porous resin films are bonded together, and therefore a rise in electric resistance caused by the lamination of the base sheets is effectively suppressed.

Abstract: An ion-exchange membrane including a porous unstretched polyethylene sheet in which fine pores are piercing, the pores being filled with an ion-exchange resin. The ion-exchange membrane exhibits excellent concentration property.

Abstract: To provide a bipolar membrane featuring improved adhesion between an anion-exchange membrane and a cation-exchange membrane without accompanied by an increase in the membrane voltage. [Means for Solution] A bipolar membrane comprising a cation-exchange membrane and an anion-exchange membrane joined together facing each other, wherein at least one of the ion exchange membranes contains a chlorinated polyolefin.

Abstract: An ion-exchange membrane including a porous unstretched polyethylene sheet in which fine pores are piercing, the pores being filled with an ion-exchange resin. The ion-exchange membrane exhibits excellent concentration property.

Abstract: To provide a bipolar membrane featuring improved adhesion between an anion-exchange membrane and a cation-exchange membrane without accompanied by an increase in the membrane voltage. [Means for Solution] A bipolar membrane comprising a cation-exchange membrane and an anion-exchange membrane joined together facing each other, wherein at least one of the ion exchange membranes contains a chlorinated polyolefin.

Abstract: In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the first conductivity type, are produced at the surface of the first conductivity type CdHgTe layer, and part of the surface of the first conductivity type CdHgTe layer between the second conductivity type CdHgTe regions is selectively irradiated with a charged particle beam to evaporate Hg atoms from that part, whereby a CdHgTe separation region of the first conductivity type and having a Cd composition larger than that of the first conductivity type CdHgTe layer is produced penetrating through the first conductivity type CdHgTe layer and surrounding each of the second conductivity type CdHgTe regions. Therefore, a highly-integrated high-resolution infrared detector with no crosstalk between pixels is achieved.

Abstract: A semiconductor laser producing visible light includes a first conductivity type GaAs substrate, a first conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer disposed on the substrate, a (Al.sub.z Ga.sub.1-z).sub.0.5 In.sub.0.5 P active layer disposed on the first conductivity type cladding layer wherein 0.ltoreq.z<w, a second conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer having a lattice constant and disposed on the active layer, a first conductivity type In.sub.1-x Ga.sub.x As.sub.1-y P.sub.y current blocking layer disposed on part of the second conductivity type cladding layer wherein y is approximately equal to -2x+2, 0.5.ltoreq.x<1, and 0<y.ltoreq.

Abstract: Ions of a metal which becomes passive under the presence of oxygen with regard to plasma etching are implanted into selected portions of the surface of a workpiece, after which the workpiece is subjected to plasma etching with a reaction gas mixed with oxygen, whereby that layer which has been rendered passive acts as a mask, and an etched pattern is formed.

Abstract: A dry etching device is provided in which on at least one portion of the path of etchant movement from the plasma production region to the etching workpiece a resin coating containing atoms or molecules of the same type as the chemically active atoms or molecules which constitute the etchant, is formed.

Abstract: A thin aluminum film 3 is formed on the top surface of a substrate 2, 1. Selected areas of the aluminum film are irradiated by an oxygen ion beam 6 to form implanted regions 7. The surface is then plasma etched, with the oxygen ion implanted regions serving as a mask to thereby prevent the removal of the underlying areas of the aluminum film.