Abstract: A method for producing a resin sintered body 1 by applying an ink 3 to thermoplastic resin powder 2 and sintering the powder, the method including the step of immersing an intermediate resin sintered body 1m, which has an unevenly colored region on the surface thereof and the whole of which has been already sintered, in a surface treatment liquid containing sulfuric acid and chromic anhydride, in which the concentration of chromic anhydride is 300 g/L or more, for 5 minutes or longer. When producing a resin sintered body by sintering thermoplastic resin powder, the surface of the resin sintered body can be evenly and sufficiently colored to an extent required without an unevenly colored region on the surface thereof, and also the surface of the resin sintered body can have a good appearance and smoothness.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains, (B) an organic acid, and (C1) copper ions or (C2) at least one kind of metal atoms selected from Ta, Ti, and Rb, the chemical mechanical polishing aqueous dispersion including the copper ions (C1) at a concentration of 1×101 to 2×105 ppm, or including the at least one kind of metal atoms (C2) selected from Ta, Ti, and Rb at a concentration of 1×10?1 to 1×103 ppm.

Abstract: This invention relates to a platform of the FPSO type in the form of a mono-column, of circular or polygonal horizontal section or of a combination of circular and polygonal sections, comprising one or more central load tanks (12), which can be single or compartmented, surrounded, in an alternately and uniformly distributed manner, by permanent-ballast tanks (13) and by ballast tanks open to the sea (“moonpools”) (14).

Abstract: A thermoplastic resin composition that includes 100 parts by mass of a first vinyl (co)polymer (I) that is produced by (co)polymerization of at least one monomer component selected from the group consisting of aromatic vinyl compounds, vinyl cyanide compounds, and other vinyl monomers copolymerizable with these compounds, and 1 to 100 parts by mass of a vinyl copolymer (II) that is produced by copolymerization of a vinyl cyanide compound and another vinyl monomer copolymerizable with the vinyl cyanide compound and in which the content of the vinyl cyanide compound component in an acetone soluble fraction of the copolymer ranges from 0.1% to 15% by mass.

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains, (B) an organic acid, and (C1) copper ions or (C2) at least one kind of metal atoms selected from Ta, Ti, and Rb, the chemical mechanical polishing aqueous dispersion including the copper ions (C1) at a concentration of 1×101 to 2×105 ppm, or including the at least one kind of metal atoms (C2) selected from Ta, Ti, and Rb at a concentration of 1×10?1 to 1×103 ppm.

Abstract: This invention relates to a platform of the FPSO type in the form of a mono-column, of circular or polygonal horizontal section or of a combination of circular and polygonal sections, comprising one or more central load tanks (12), which can be single or compartmented, surrounded, in an alternately and uniformly distributed manner, by permanent-ballast tanks (13) and by ballast tanks open to the sea (“moonpools”) (14).

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

Abstract: A thermoplastic resin composition that has high chemical resistance, excellent appearance of a molded product thereof, and, as a surface layer material, good adhesion to a base material resin, particularly a PS resin or its waste resin, and that can provide a composite molded product having excellent processibility (for example, chipping resistance) and high durability (for example, heat-cycle resistance), and a composite molded product including the thermoplastic resin composition as a surface layer material.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

Abstract: The present invention relates to a floating structure to receive maritime production or drilling installations that is provided with means to reduce movement caused by the action of environmental forces on it. These means confer a more stable behavior on the structure's movements.

Abstract: The present invention relates to a floating structure to receive maritime production or drilling installations that is provided with means to reduce movement caused by the action of environmental forces on it. These means confer a more stable behavior on the structure's movements.

Abstract: Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

Abstract: A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

Abstract: A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

Abstract: A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

Abstract: A shape memory foam member is disclosed. A coefficient of water absorption of the shape memory foam member is in the range between 0.01 g/cm3 and 0.2 g/cm3 in a non-compressed state. The shape memory foam member is compressed with heating; cooled with keeping the shape memory foam member in the compressed state; and released from the compressive pressure on the shape memory foam member after cooling. The original shape of the shape memory foam member is substantially recovered by heating.

Abstract: An elastomer sealing material having low dielectric constant and low dielectric dissipation, which is satisfactory with both of resistance to oxygen plasma and non-adhesion to quartz and can be applied to apparatus utilizing microwaves, is disclosed. The plasma-resistant fluorine-based elastomer sealing material comprises a fluorine-based elastomer having a divalent perfluoropolyether or divalent perfluoroalkylene structure in the main chain thereof and having two or more hydrosilyl groups and addition-reactive alkenyl groups in the terminals or side chains thereof, and a polymer having two or more hydrosilyl groups in the molecule and being capable of addition reacting with the alkenyl groups, the fluorine-based elastomer being crosslinked with the polymer.

Abstract: An aqueous dispersion for chemical mechanical polishing that is hard to putrefy, scarcely causes scratches, causes only small dishing and is suitable for used in a micro isolating step or a planarizing step of an inter layer dielectric in production of semiconductor devices, which dispersion comprises ceria particles, a preservative composed of a compound having a heterocyclic structure containing a nitrogen atom and a sulfur atom in the ring, such as an isothiazolone compound, and an organic component such as organic abrasive grains composed of resin particles, a dispersing agent composed of a water-soluble polymer having a specific molecular weight or the like, a surfactant and/or an organic acid or a salt thereof contained in an aqueous medium, wherein the ceria particles, preservative and organic component are contained in proportions of 0.1 to 20% by mass, 0.001 to 0.2% by mass and 0.