Patents by Inventor Kazuo Nojiri
Kazuo Nojiri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10056264Abstract: Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN) and related apparatus. In some embodiments, the methods involve exposing the III-V material to a chlorine-containing plasma without biasing the substrate to form a modified III-V surface layer; and applying a bias voltage to the substrate while exposing the modified III-V surface layer to a plasma to thereby remove the modified III-V surface layer. The disclosed methods are suitable for a wide range of applications, including etching processes for trenches and holes, fabrication of HEMTs, fabrication of LEDs, and improved selectivity in etching processes.Type: GrantFiled: June 3, 2016Date of Patent: August 21, 2018Assignee: Lam Research CorporationInventors: Wenbing Yang, Tomihito Ohba, Samantha Tan, Keren Jacobs Kanarik, Jeffrey Marks, Kazuo Nojiri
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Publication number: 20160358782Abstract: Provided herein are ALE methods of removing III-V materials such as gallium nitride (GaN) and related apparatus. In some embodiments, the methods involve exposing the III-V material to a chlorine-containing plasma without biasing the substrate to form a modified III-V surface layer; and applying a bias voltage to the substrate while exposing the modified III-V surface layer to a plasma to thereby remove the modified III-V surface layer. The disclosed methods are suitable for a wide range of applications, including etching processes for trenches and holes, fabrication of HEMTs, fabrication of LEDs, and improved selectivity in etching processes.Type: ApplicationFiled: June 3, 2016Publication date: December 8, 2016Inventors: Wenbing Yang, Tomihito Ohba, Samantha Tan, Keren Jacobs Kanarik, Jeffrey Marks, Kazuo Nojiri
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Patent number: 7737023Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.Type: GrantFiled: August 19, 2008Date of Patent: June 15, 2010Assignee: Renesas Technology CorporationInventors: Shouochi Uno, Atsushi Maekawa, Takashi Yunogami, Kazutami Tago, Kazuo Nojiri, Shuntaro Machida, Takafumi Tokunaga
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Publication number: 20090011592Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.Type: ApplicationFiled: August 19, 2008Publication date: January 8, 2009Inventors: Shouichi Uno, Atsushi Maekawa, Takashi Yunogami, Kazutami Tago, Kazuo Nojiri, Shuntaro Machida, Takafumi Tokunaga
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Patent number: 7419902Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.Type: GrantFiled: April 13, 2005Date of Patent: September 2, 2008Assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., LtdInventors: Shouochi Uno, Atsushi Maekawa, Takashi Yunogami, Kazutami Tago, Kazuo Nojiri, Shuntaro Machida, Takafumi Tokunaga
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Patent number: 7288156Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.Type: GrantFiled: January 10, 2006Date of Patent: October 30, 2007Assignee: Lam Research CorporationInventors: Yoichi Isago, Kazuo Nojiri, Naoaki Kobayashi, Teruo Saito, Shu Nakajima
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Publication number: 20070037292Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g. plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: October 24, 2006Publication date: February 15, 2007Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 7132293Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: May 27, 2004Date of Patent: November 7, 2006Assignee: Hitachi, Ltd.Inventors: Yoshimi Torii, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20060112974Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.Type: ApplicationFiled: January 10, 2006Publication date: June 1, 2006Inventors: Yoichi Isago, Kazuo Nojiri, Naoaki Kobayashi, Teruo Saito, Shu Nakajima
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Patent number: 7004181Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.Type: GrantFiled: August 27, 2002Date of Patent: February 28, 2006Assignee: Lam Research CorporationInventors: Yoichi Isago, Kazuo Nojiri, Naoaki Kobayashi, Teruo Saito, Shu Nakajima
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Patent number: 6989228Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: July 31, 2001Date of Patent: January 24, 2006Assignee: Hitachi, LTDInventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20050186801Abstract: In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N2/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.Type: ApplicationFiled: April 13, 2005Publication date: August 25, 2005Inventors: Shouochi Uno, Atsushi Maekawa, Takashi Yunogami, Kazutami Tago, Kazuo Nojiri, Shuntaro Machida, Takafumi Tokunaga
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Publication number: 20040219687Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: ApplicationFiled: May 27, 2004Publication date: November 4, 2004Inventors: Yoshimi Torii, Kazuo Nojiri, Yoshinao Kawasaki, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Patent number: 6774020Abstract: Insulating films 34 through 38 (of which insulating films 34, 36, 38 are silicon nitride films and insulating films 35, 38 are silicon oxide films) are sequentially formed on the wires 33 of the fourth wiring layer and groove pattern 40 is transferred into the insulating film 38 by means of photolithography. An anti-reflection film 41 is formed to fill the grooves 40 of the insulating film 38 and then a resist film 42 carrying a hole pattern 43 is formed. The films are subjected to an etching operation in the presence of the resist film 42 to transfer the hole pattern into the insulating films 38, 37, 36 and part of the insulating film 35. Subsequently, the resist film 42 and the anti-reflection film 41 are removed and the groove pattern 40 and the hole pattern 43 are transferred respectively into the insulating film 37 and the insulating film 35 by using the insulating film 38 as mask.Type: GrantFiled: January 31, 2003Date of Patent: August 10, 2004Assignee: Renesas Technology Corp.Inventors: Shinichi Fukada, Kazuo Nojiri, Takashi Yunogami, Shoji Hotta, Hideo Aoki, Takayuki Oshima, Nobuyoshi Kobayashi
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Publication number: 20040092044Abstract: In a semiconductor device manufacturing method, an ion current density distribution is measured in a plasma processing apparatus. It is then ascertained whether or not the measured distribution is in compliance with an ion current density distribution that becomes a criterion.Type: ApplicationFiled: October 31, 2003Publication date: May 13, 2004Inventors: Nobuyuki Mise, Tatehito Usui, Masato Ikegawa, Kazuo Nojiri, Kazuyuki Tsunokuni, Tetsuo Ono
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Patent number: 6656752Abstract: A wafer is exposed to a plasma. Here, the wafer includes a semiconductor or a conductor 1 provided on an insulator 6, an insulator 2 formed thereon and having a region the thickness of which has been made locally thin, and a 2nd conductor 4 provided on the insulator 2, one of the semiconductor or the conductor 1 and the 2nd conductor 4 having a 1st region from the surface of which a substantially total solid angle is formed, the other having a 2nd region a solid angle formed from the surface of which is made smaller than the 1st region. Then, a voltage is applied to the semiconductor or the conductor 1 and the 2nd conductor 4 so as to measure a time elapsing until the insulator 2 undergoes a dielectric breakdown. Moreover, the ion current density is determined from an electric charge required therefor and an area exposed onto the surface of the 2nd conductor 4.Type: GrantFiled: October 11, 2001Date of Patent: December 2, 2003Assignee: Hitachi, Ltd.Inventors: Nobuyuki Mise, Tatehito Usui, Masato Ikegawa, Kazuo Nojiri, Kazuyuki Tsunokuni, Tetsuo Ono
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Patent number: 6656846Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.Type: GrantFiled: May 3, 2001Date of Patent: December 2, 2003Assignee: Hitachi, Ltd.Inventors: Masayuki Kojima, Yoshimi Torii, Michimasa Hunabashi, Kazuyuki Suko, Takashi Yamada, Keizo Kuroiwa, Kazuo Nojiri, Yoshiaki Sato, Ryooji Fukuyama, Hironobu Kawahara
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Publication number: 20030217762Abstract: A water supply apparatus and a method thereof have a high capability of peeling-off and removing unnecessary objects such as a resist film, and parameters for setting efficient water supply conditions. The water supply apparatus and the method are designed to supply water for cleaning, peeling-off, or treating a target article. On a surface of the target article to be processed, a nozzle device is provided for spraying a mixture of water vapor and water mist. At least the following parameters are respectively set as water supply conditions to proper values so as to supply water to the target article, and these parameters include (1) a weight ratio of water vapor to water mist on the surface to be processed, (2) a temperature of the surface to be processed, and (3) a distance between a (water) blowing port of the nozzle device and the surface to be processed.Type: ApplicationFiled: February 18, 2003Publication date: November 27, 2003Applicant: LAM RESEARCH CORPORATIONInventors: Naoaki Kobayashi, Ryuta Yamaguchi, Kaori Tajima, Kohsuke Ori, Eri Haikata, Shu Nakajima, Yoichi Isago, Kazuo Nojiri
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Patent number: 6607988Abstract: With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.Type: GrantFiled: December 28, 2000Date of Patent: August 19, 2003Assignee: Hitachi, Ltd.Inventors: Takashi Yunogami, Yoshitaka Nakamura, Kazuo Nojiri, Sukeyoshi Tsunekawa, Toshiyuki Arai, Miwako Nakahara, Shigeru Ohno, Tomonori Saeki, Masaru Izawa
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Publication number: 20030139031Abstract: Insulating films 34 through 38 (of which insulating films 34, 36, 38 are silicon nitride films and insulating films 35, 38 are silicon oxide films) are sequentially formed on the wires 33 of the fourth wiring layer and groove pattern 40 is transferred into the insulating film 38 by means of photolithography. An anti-reflection film 41 is formed to fill the grooves 40 of the insulating film 38 and then a resist film 42 carrying a hole pattern 43 is formed. The films are subjected to an etching operation in the presence of the resist film 42 to transfer the hole pattern into the insulating films 38, 37, 36 and part of the insulating film 35. Subsequently, the resist film 42 and the anti-reflection film 41 are removed and the groove pattern 40 and the hole pattern 43 are transferred respectively into the insulating film 37 and the insulating film 35 by using the insulating film 38 as mask.Type: ApplicationFiled: January 31, 2003Publication date: July 24, 2003Inventors: Shinichi Fukada, Kazuo Nojiri, Takashi Yunogami, Shoji Hotta, Hideo Aoki, Takayuki Oshima, Nobuyoshi Kobayashi