Abstract: A display device includes a display panel including: a first subpixel including a first light-emitting element; and a second subpixel adjacent to the first subpixel and including a second light-emitting element. The display device includes a circuit unit calculating a degradation amount of the first light-emitting element in accordance with a light-emission state of the second light-emitting element, and calculating a compensation value of the first light-emitting element in accordance with the calculated degradation amount of the first light-emitting element.

Abstract: An information processing apparatus comprises a first heat generation circuit, a second heat generation circuit, a blocking assembly, and a processor. The blocking assembly performs a first operation of blocking air flowing from the first heat generation circuit toward the second heat generation circuit or a second operation of passing the air, and the processor is configure to instruct the blocking assembly to perform the first operation in a case where a temperature of the air is higher than a predetermined value, and instruct the blocking assembly to perform the second operation in a case where the temperature of the air is lower than the predetermined value.

Abstract: An information processing apparatus comprises a first heat generation circuit, a second heat generation circuit, a blocking assembly, and a processor. The blocking assembly performs a first operation of blocking air flowing from the first heat generation circuit toward the second heat generation circuit or a second operation of passing the air, and the processor is configure to instruct the blocking assembly to perform the first operation in a case where a temperature of the air is higher than a predetermined value, and instruct the blocking assembly to perform the second operation in a case where the temperature of the air is lower than the predetermined value.

Abstract: A vibration element includes: a base; a first arm continuous with the base; a second arm that is continuous with the base and is adjacent to the first arm; a first electrode disposed on the first arm, the second arm, and the base; a first piezoelectric layer that has a first polarity and that is disposed on the first electrode on the first arm; a second piezoelectric layer that has a second polarity different from the first polarity and that is disposed on the first electrode on the second arm; an insulating layer disposed on the first electrode on the base; and a second electrode disposed on the first piezoelectric layer, the second piezoelectric layer, and the insulating layer.

Abstract: A method for manufacturing a carbon dioxide adsorbent includes: forming a kneaded product containing a hydrophilic fiber, a powdery porous material, and an aqueous hydrophilic binder dispersion into particles and drying the particles to generate porous material particles containing the hydrophilic fiber and the powdery porous material combined by the hydrophilic binder; and preparing an aqueous amine solution having an amine concentration of 5% or more and 70% or less and a temperature of 10° C. or higher and 100° C. or lower, impregnating the aqueous amine solution into the porous material particles, and aeration-drying the porous material particles impregnating the amine. The carbon dioxide adsorbent contains the porous material particles and the amine carried by the porous material particles, the porous material particles containing the hydrophilic fiber and the powdery porous material combined by the hydrophilic binder.

Abstract: A carbon dioxide separation recovery method includes: bringing a particulate carbon dioxide adsorbent and a treatment target gas containing carbon dioxide into contact with each other to make the carbon dioxide adsorbent adsorb the carbon dioxide contained in the treatment target gas; and bringing the carbon dioxide adsorbent which has adsorbed the carbon dioxide and superheated steam into contact with each other to desorb the carbon dioxide from the carbon dioxide adsorbent and thereby regenerate the carbon dioxide adsorbent, and recovering the desorbed carbon dioxide. A saturation temperature of the superheated steam which is brought into contact with the carbon dioxide adsorbent is not more than a temperature of the carbon dioxide adsorbent which contacts the superheated steam. The regenerated carbon dioxide adsorbent is utilized for adsorption of the carbon dioxide again without being subjected to a drying step.

Abstract: A carbon dioxide separation recovery method includes: bringing a particulate carbon dioxide adsorbent and a treatment target gas containing carbon dioxide into contact with each other to make the carbon dioxide adsorbent adsorb the carbon dioxide contained in the treatment target gas; and bringing the carbon dioxide adsorbent which has adsorbed the carbon dioxide and desorption steam into contact with each other to desorb the carbon dioxide from the carbon dioxide adsorbent, and thereby, regenerate the carbon dioxide adsorbent and recover the desorbed carbon dioxide. The step of recovering the carbon dioxide includes utilizing a recovery gas as a heat source of a heat exchanger, the recovery gas containing the desorption steam which has contacted the carbon dioxide adsorbent and the carbon dioxide which has been desorbed from the carbon dioxide adsorbent.

Abstract: A carbon dioxide separation recovery method includes: bringing a particulate carbon dioxide adsorbent and a treatment target gas containing carbon dioxide into contact with each other to make the carbon dioxide adsorbent adsorb the carbon dioxide contained in the treatment target gas; and bringing the carbon dioxide adsorbent which has adsorbed the carbon dioxide and superheated steam into contact with each other to desorb the carbon dioxide from the carbon dioxide adsorbent and thereby regenerate the carbon dioxide adsorbent, and recovering the desorbed carbon dioxide. A saturation temperature of the superheated steam which is brought into contact with the carbon dioxide adsorbent is not more than a temperature of the carbon dioxide adsorbent which contacts the superheated steam. The regenerated carbon dioxide adsorbent is utilized for adsorption of the carbon dioxide again without being subjected to a drying step.

Abstract: A carbon dioxide separation recovery method includes: bringing a particulate carbon dioxide adsorbent and a treatment target gas containing carbon dioxide into contact with each other to make the carbon dioxide adsorbent adsorb the carbon dioxide contained in the treatment target gas; and bringing the carbon dioxide adsorbent which has adsorbed the carbon dioxide and desorption steam into contact with each other to desorb the carbon dioxide from the carbon dioxide adsorbent, and thereby, regenerate the carbon dioxide adsorbent and recover the desorbed carbon dioxide. The step of recovering the carbon dioxide includes utilizing a recovery gas as a heat source of a heat exchanger, the recovery gas containing the desorption steam which has contacted the carbon dioxide adsorbent and the carbon dioxide which has been desorbed from the carbon dioxide adsorbent.

Abstract: A vibration element includes: a base; a first arm continuous with the base; a second arm that is continuous with the base and is adjacent to the first arm; a first electrode disposed on the first arm, the second arm, and the base; a first piezoelectric layer that has a first polarity and that is disposed on the first electrode on the first arm; a second piezoelectric layer that has a second polarity different from the first polarity and that is disposed on the first electrode on the second arm; an insulating layer disposed on the first electrode on the base; and a second electrode disposed on the first piezoelectric layer, the second piezoelectric layer, and the insulating layer.

Abstract: A method for manufacturing a carbon dioxide adsorbent includes: forming a kneaded product containing a hydrophilic fiber, a powdery porous material, and an aqueous hydrophilic binder dispersion into particles and drying the particles to generate porous material particles containing the hydrophilic fiber and the powdery porous material combined by the hydrophilic binder; and preparing an aqueous amine solution having an amine concentration of 5% or more and 70% or less and a temperature of 10° C. or higher and 100° C. or lower, impregnating the aqueous amine solution into the porous material particles, and aeration-drying the porous material particles impregnating the amine. The carbon dioxide adsorbent contains the porous material particles and the amine carried by the porous material particles, the porous material particles containing the hydrophilic fiber and the powdery porous material combined by the hydrophilic binder.

Abstract: A semiconductor integrated circuit device with a “PAD on I/O cell” structure in which a pad lead part is disposed almost in the center of an I/O part so as to reduce the chip layout area. In the I/O part, a transistor lies nearest to the periphery of the semiconductor chip. When seen in a plan view of the I/O part, a resistance lies above the transistor and a first and a second diode lie above the resistance; a second transistor lies above the diodes; and a logic block lies above the second transistor with a pad lead part, for example, formed in a metal wiring layer, therebetween. This permits the pad through the second transistor to be on the same node and therefore the pad lead part can be disposed almost in the center of the I/O part.

Abstract: An oil separator includes a plurality of separation discs rotatable together with a spindle and layered in an axis direction of the spindle, a nozzle that protrudes from a lower circumferential face of the spindle and configured to rotate the spindle by injection of an oil, a lower case has a gas inflow part into which blow-by gas flows, an oil discharge part into which an oil after separation is discharged, an upper case that sections together with the lower case a housing chamber in which spindle, separation discs and nozzle are housed, and a sectioning member that sections the housing chamber into a primary separation chamber, configured to primarily separate the oil mist, and a secondary separation chamber that secondarily separates the oil mist included in the gas after primary separation, and forms between the nozzle and the separation discs a communication opening that guides the gas being treated.

Abstract: A semiconductor integrated circuit device with a “PAD on I/O cell” structure in which a pad lead part is disposed almost in the center of an I/O part so as to reduce the chip layout area. In the I/O part, a transistor lies nearest to the periphery of the semiconductor chip. When seen in a plan view of the I/O part, a resistance lies above the transistor and a first and a second diode lie above the resistance; a second transistor lies above the diodes; and a logic block lies above the second transistor with a pad lead part, for example, formed in a metal wiring layer, therebetween. This permits the pad through the second transistor to be on the same node and therefore the pad lead part can be disposed almost in the center of the I/O part.

Abstract: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.

Abstract: A centrifugal fan includes an impeller, a motor portion, and a housing. The housing includes an upper plate portion, a lower plate portion arranged to have the motor portion fixed thereto; and a side wall portion. A flow control member is arranged to extend in a line along a boundary between an inside surface of the side wall portion and one of a lower surface of the upper plate portion and an upper surface of the lower plate portion. The flow control member includes a flow control surface arranged to extend radially outward from the one of the lower surface of the upper plate portion and the upper surface of the lower plate portion to the inside surface of the side wall portion while becoming more distant from the one of the lower surface of the upper plate portion and the upper surface of the lower plate portion.

Abstract: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor.

Abstract: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.

Abstract: A semiconductor integrated circuit device comprises I/O cells arranged around a core region. Each of the I/O cells comprises a level shifter circuit, an I/O logic circuit, and an I/O buffer circuit. An I/O logic region in which the I/O logic circuit is arranged and an I/O buffer region in which the I/O buffer circuit is arranged overlap with a region in which a pad for the I/O cell is arranged. The I/O logic region and the I/O buffer region are arranged side by side in a direction parallel to a side of the core region.

Abstract: The present invention has for its purpose to provide a technique capable of reducing planar dimension of the semiconductor device. An input/output circuit is formed over the semiconductor substrate, a grounding wiring and a power supply wiring pass over the input/output circuit, and a conductive layer for a bonding pad is formed thereover. The input/output circuit is formed of MISFET elements in the nMISFET forming region and the pMISFET forming region, resistance elements in the resistance element forming regions and diode elements in the diode element forming regions functioning as protective elements. A wiring connected to the protective elements and positioned under the grounding wiring and the power supply wiring is pulled out in a pulling-out region between the nMISFET forming region and the pMISFET forming region and between the grounding wiring and the power supply wiring to be connected to the conductive layer.