Patents by Inventor Kazutaka IZUKASHI

Kazutaka IZUKASHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12015041
    Abstract: A solid-state imaging unit according to one embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric conversion section, a charge holding section, and a transfer transistor. The charge holding section holds a charge transferred from the photoelectric conversion section. The transfer transistor transfers the charge from the photoelectric conversion section to the charge holding section. The pixels each include two or more light-blocking sections disposed in layers between the light receiving surface and the charge holding section and are different from each other. The two or more light-blocking sections are provided at positions at which the two or more light-blocking sections do not block entry, into the photoelectric conversion section, of the light having entered via the light receiving surface and at which the two or more light-blocking sections do not provide a gap when viewed from the light receiving surface.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: June 18, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Kazutaka Izukashi
  • Publication number: 20240006448
    Abstract: Provided is an imaging device including: a first semiconductor substrate provided with a photoelectric conversion element, a second semiconductor substrate stacked on the first semiconductor substrate with an interlayer insulating film interposed therebetween and provided with a pixel circuit that reads out charges generated in the photoelectric conversion element as a pixel signal, and a via that penetrates the interlayer insulating film and electrically connects a first surface of the first semiconductor substrate facing the second semiconductor substrate and at least a part of a second surface of the second semiconductor substrate facing the first surface.
    Type: Application
    Filed: October 11, 2021
    Publication date: January 4, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takeya MOCHIZUKI, Keiichi NAKAZAWA, Shinichi YOSHIDA, Kenya NISHIO, Nobutoshi FUJII, Suguru SAITO, Masaki OKAMOTO, Ryosuke KAMATANI, Yuichi YAMAMOTO, Kazutaka IZUKASHI, Yuki MIYANAMI, Hirotaka YOSHIOKA, Hiroshi HORIKOSHI, Takuya KUROTORI, Shunsuke FURUSE, Takayoshi HONDA
  • Publication number: 20230143387
    Abstract: An imaging device includes a plurality of imaging elements, wherein each of the plurality of imaging elements includes: a plurality of pixels containing impurities of a first conductivity type; an element separation wall surrounding the plurality of pixels and provided so as to penetrate a semiconductor substrate; an on-chip lens provided above a light receiving surface of the semiconductor substrate so as to be shared by the plurality of pixels; and a first separation portion provided in a region surrounded by the element separation wall and separating the plurality of pixels, the first separation portion is provided so as to extend in a thickness direction of the semiconductor substrate, and a first diffusion region containing impurities of a second conductivity type opposite to the first conductivity type is provided in a region positioned around the first separation portion and extending in the thickness direction of the semiconductor substrate.
    Type: Application
    Filed: March 26, 2021
    Publication date: May 11, 2023
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Akira MATSUMOTO, Koichiro ZAITSU, Keiji NISHIDA, Mizuki NISHIDA, Kazutaka IZUKASHI, Daisuke ITO, Yasufumi MIYOSHI, Junpei YAMAMOTO, Yusuke TANAKA, Yasushi HAMAMOTO
  • Publication number: 20210327940
    Abstract: A solid-state imaging unit according to one embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric conversion section, a charge holding section, and a transfer transistor. The charge holding section holds a charge transferred from the photoelectric conversion section. The transfer transistor transfers the charge from the photoelectric conversion section to the charge holding section. The pixels each include two or more light-blocking sections disposed in layers between the light receiving surface and the charge holding section and are different from each other. The two or more light-blocking sections are provided at positions at which the two or more light-blocking sections do not block entry, into the photoelectric conversion section, of the light having entered via the light receiving surface and at which the two or more light-blocking sections do not provide a gap when viewed from the light receiving surface.
    Type: Application
    Filed: September 4, 2019
    Publication date: October 21, 2021
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Kazutaka IZUKASHI