Patents by Inventor Kazuto Ikemoto

Kazuto Ikemoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040048761
    Abstract: The cleaning composition of the present invention is characterized by containing N-hydroxyformamide. The cleaning composition is capable of easily removing patterned photoresist masks or resist residues remaining on substrates after the etching process or removing resist residues remaining after the etching process and the subsequent ashing process within a short period of time without causing the corrosion of wiring materials and insulating films, thereby ensuring the fine processing to provide high-precision wiring circuits.
    Type: Application
    Filed: September 5, 2003
    Publication date: March 11, 2004
    Inventor: Kazuto Ikemoto
  • Publication number: 20040029753
    Abstract: In the present invention, the concentration of dissolved oxygen in the resist stripping liquid is limited to 3 ppm or lower. Using the resist stripping liquid having such a low dissolved oxygen concentration, resist residues are removed from a substrate containing copper and/or a copper alloy without causing the corrosion of copper.
    Type: Application
    Filed: June 24, 2003
    Publication date: February 12, 2004
    Inventors: Kazuto Ikemoto, Masaru Ohto
  • Publication number: 20040009883
    Abstract: The resist stripping composition of the present invention comprises 0.001 to 0.5% by weight of a fluorine compound, a mixed solvent of an amide solvent and an ether solvent and water. The resist stripping composition completely removes the resist residues remaining after the dry etching and the ashing in the wiring process for manufacturing semiconductor devices and liquid crystal panel devices comprising IC or LSI in a short period of time with a minimized corrosion of a low dielectric film.
    Type: Application
    Filed: June 24, 2003
    Publication date: January 15, 2004
    Inventors: Kazuto Ikemoto, Kojiro Abe
  • Patent number: 6638694
    Abstract: A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): wherein R1 and R2 are each hydrogen atom, C1-C8 alkyl or C1-C8 alkenyl. The resist stripping agent easily and efficiently removes resist films and resist residues remaining after etching or after ashing subsequent to etching in manufacturing semiconductor devices at low temperatures in short period of time. The resist stripping agent is resistant to corrosion against materials for substrate, circuits and insulating films.
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: October 28, 2003
    Assignee: Mitsubishi Gas Chemical Company, Inc
    Inventors: Kazuto Ikemoto, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
  • Publication number: 20030186175
    Abstract: A resist stripping agent comprising a specific alkanolamine having at least one functional group represented by the following formula (I): 1
    Type: Application
    Filed: February 28, 2003
    Publication date: October 2, 2003
    Inventors: Kazuto Ikemoto, Hisaki Abe, Taketo Maruyama, Tetsuo Aoyama
  • Publication number: 20030181344
    Abstract: The photoresist stripping composition of the present invention contains at least one oxymethylamine compound represented by the following formula 1: 1
    Type: Application
    Filed: March 12, 2003
    Publication date: September 25, 2003
    Inventors: Kazuto Ikemoto, Yoshiaki Yamamoto, Hiroshi Yoshida, Taketo Maruyama
  • Publication number: 20030148624
    Abstract: The method for removing resists of the present invention comprises a step of contacting a copper-containing substrate having a resist layer thereon with a cleaning composition containing 1% by weight or more of hydrogen peroxide and ammonia or ammonium ion; and a step of contacting the substrate thus contact-treated with an organic solvent-containing resist stripping composition, thereby removing the resist layer. The other method for removing resists of the present invention comprises a step of contacting a substrate having thereon a resist layer, preferably a non-ashed resist layer, with a resist stripping composition of pH 5 or more containing 4 to 30% by weight of hydrogen peroxide, 0.01 to 15% by weight of ammonium ion, and 0.01 to 15% by weight of phosphate ion and/or carbonate ion.
    Type: Application
    Filed: January 28, 2003
    Publication date: August 7, 2003
    Inventors: Kazuto Ikemoto, Hiroshi Matsunaga, Hidetaka Shimizu, Masaru Ohto
  • Patent number: 6372410
    Abstract: A resist stripping composition contains 0.001 to 0.5% by weight of a fluorine compound, 50 to 99% by weight of an ether solvent and the balance being substantially water. With such a specific content range of the ether solvent, the resist stripping composition shows reduced corrosive properties when diluted with water in the rinsing step as well as shows complete removal of resist residues without causing corrosion of wiring materials and substrate materials.
    Type: Grant
    Filed: September 25, 2000
    Date of Patent: April 16, 2002
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Kazuto Ikemoto, Kojiro Abe, Tetsuo Aoyama
  • Patent number: 5824818
    Abstract: A process for preparing a lactate which includes: (a) preparing lactonitrile from prussic acid and acetaldehyde, (b) hydrating the lactonitrile to form lactamide, (c) forming the desired lactate and formamide from lactamide and formate (or methanol and carbon monoxide), (d) separating and collecting components, having a lower boiling point than that of lactate from the reaction liquid in step (c), by distillation under specified conditions, and (e) dehydrating formamide from step (d) to form prussic acid and recycling the prussic acid to step (a). Heretofore, lactates had been manufactured by forming lactonitrile (cyanohydrin) from acetaldehyde and prussic acid, and then esterifying lactonitrile with a mineral acid or the like. However, in this conventional process, ammonium salts were formed as by-products in an amount equal to that of the lactate.
    Type: Grant
    Filed: August 15, 1996
    Date of Patent: October 20, 1998
    Assignee: Mitsubishi Gas Chemical Company, Inc.
    Inventors: Takafumi Abe, Toshiyuki Gotoh, Takako Uchiyama, Hirofumi Higuchi, Yoshikazu Shima, Kazuto Ikemoto