Patents by Inventor Kazuto Yamauchi

Kazuto Yamauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10297475
    Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: May 21, 2019
    Assignee: Ebara Corporation
    Inventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi
  • Publication number: 20190122904
    Abstract: A method for planarizing a workpiece includes bringing a surface of the workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other, rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad, and simultaneously reciprocally moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction.
    Type: Application
    Filed: December 20, 2018
    Publication date: April 25, 2019
    Inventors: Eisuke SUZUKI, Kazuto YAMAUCHI, Tatsutoshi SUZUKI, Daisuke SUZUKI
  • Patent number: 10199242
    Abstract: A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: February 5, 2019
    Assignees: OSAKA UNIVERSITY, TOHO ENGINEERING CO., LTD.
    Inventors: Eisuke Suzuki, Kazuto Yamauchi, Tatsutoshi Suzuki, Daisuke Suzuki
  • Patent number: 10163645
    Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: December 25, 2018
    Assignees: OSAKA UNIVERSITY, TOHO ENGINEERING CO., LTD.
    Inventors: Kazuto Yamauchi, Ai Isohashi, Yasuhisa Sano
  • Publication number: 20170098559
    Abstract: A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 6, 2017
    Inventors: Eisuke SUZUKI, Kazuto YAMAUCHI, Tatsutoshi SUZUKI, Daisuke SUZUKI
  • Publication number: 20170069506
    Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.
    Type: Application
    Filed: March 11, 2015
    Publication date: March 9, 2017
    Applicants: OSAKA UNIVERSITY, TOHO Engineering Co., Ltd.
    Inventors: Kazuto YAMAUCHI, Ai ISOHASHI, Yasuhisa SANO
  • Patent number: 9287016
    Abstract: The device is configured from: a reflective surface shape controllable mirror in which a band-shaped X-ray reflective surface 2 is formed on a central portion of a front surface of a substrate 1, reference planes 3 are formed along both sides of the X-ray reflective surface, and a plurality of piezoelectric elements 4 are attached to at least one of front and back surfaces of the substrate so as to be arranged in the longitudinal direction of the X-ray reflective surface on both side portions of the substrate, and a multichannel control system for applying a voltage to each of the piezoelectric elements.
    Type: Grant
    Filed: December 28, 2010
    Date of Patent: March 15, 2016
    Assignees: JTEC CORPORATION, OSAKA UNIVERSITY
    Inventors: Kazuto Yamauchi, Takashi Kimura, Takashi Tsumura
  • Patent number: 9233449
    Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.
    Type: Grant
    Filed: March 19, 2010
    Date of Patent: January 12, 2016
    Assignees: OSAKA UNIVERSITY, EBARA CORPORATION
    Inventors: Yasuhisa Sano, Kazuto Yamauchi, Junji Murata, Shun Sadakuni, Keita Yagi
  • Patent number: 9100020
    Abstract: A panel device includes a panel section, a first conductive layer that is provided in a side of one surface of the panel section, an insulating layer that is stacked on the first conductive layer and a second conductive layer that is stacked on the insulating layer. The first conductive layer and the second conductive layer are formed by coating an electrically conductive solvent-type substance. The insulating layer is formed by coating an insulating curing-acceleration-type substance.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: August 4, 2015
    Assignees: Mitsubishi Jidosha Kogyo Kabushiki Kaisha, Visteon Japan, Ltd.
    Inventors: Kazuto Yamauchi, Yasunori Murayama, Sadahiko Tanaka, Keitaro Takizawa, Kouichi Yamanoue
  • Publication number: 20150068680
    Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.
    Type: Application
    Filed: November 12, 2014
    Publication date: March 12, 2015
    Inventors: Yasuhisa SANO, Kazuto YAMAUCHI, Junji MURATA, Takeshi OKAMOTO, Shun SADAKUNI, Keita YAGI
  • Patent number: 8912095
    Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: December 16, 2014
    Assignees: Osaka University, Ebara Corporation
    Inventors: Yasuhisa Sano, Kazuto Yamauchi, Junji Murata, Takeshi Okamoto, Shun Sadakuni, Keita Yagi
  • Publication number: 20140326612
    Abstract: Provided is a method for manufacturing a solid oxide and a device therefor, capable of manufacturing a solid oxide used as an optical material without introducing damaged layers caused by machining, which does not use any polishing agent or abrasive grains including rare earth elements, or does not use any solution, such as hydrogen fluoride, for which handling is difficult and which imposes a heavy environmental burden.
    Type: Application
    Filed: December 5, 2012
    Publication date: November 6, 2014
    Inventor: Kazuto Yamauchi
  • Publication number: 20140231011
    Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.
    Type: Application
    Filed: April 10, 2014
    Publication date: August 21, 2014
    Applicant: Ebara Corporation
    Inventors: Kazuto YAMAUCHI, Yasuhisa SANO, Hideyuki HARA, Junji MURATA, Keita YAGI
  • Publication number: 20140230848
    Abstract: The present invention is a method of cleaning a substrate, comprising cleaning at least one surface of a substrate located in a liquid by injecting pressurized cleaning liquid containing bubbles or cleaning particles from a injection nozzle to at least one surface of the substrate.
    Type: Application
    Filed: April 24, 2014
    Publication date: August 21, 2014
    Applicants: HOYA CORPORATION, OSAKA UNIVERSITY
    Inventors: Kazuto YAMAUCHI, Tsutomu SHOKI, Takeyuki YAMADA
  • Patent number: 8766924
    Abstract: An EL emitting touch switch includes first electrodes, a single second electrode facing the first electrodes, and EL layers each sandwiched between a corresponding one of the first electrodes and the second electrode. A light emission driver applies a driving voltage between the first and second electrodes to cause the EL layers to emit light. A timing signal generator generates a timing signal to control the light emission driver such that the application of the driving voltage is stopped at predetermined intervals. Touch decision units are provided for each first electrode. Each touch decision unit includes a feedback circuit for supplying current to the corresponding first electrode such that the potentials of the first and second electrodes become equal to each other, and detects contact of a human body with the corresponding first electrode based on operation of the feedback circuit while the application of the driving voltage is stopped.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: July 1, 2014
    Assignees: Mitsubishi Jidosha Kogyo Kabushiki Kaisha, Visteon Japan, Ltd.
    Inventors: Kazuto Yamauchi, Yasunori Murayama, Sadahiko Tanaka, Keitaro Takizawa, Kouichi Yamanoue
  • Patent number: 8748062
    Abstract: The present invention is a method of cleaning a substrate, comprising cleaning at least one surface of a substrate located in a liquid by injecting pressurized cleaning liquid containing bubbles or cleaning particles from a injection nozzle to at least one surface of the substrate.
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: June 10, 2014
    Assignees: Osaka University, Hoya Corporation
    Inventors: Kazuto Yamauchi, Tsutomu Shoki, Takeyuki Yamada
  • Patent number: 8744046
    Abstract: Provided are a method and an apparatus of precisely measuring the intensity profile of an x-ray nanobeam, which can measure x-rays having different wavelengths with one knife edge and can perform optimal measurements corresponding to the depth of focus of an x-ray beam and the conditions of other measurement devices, using a dark field measurement method which enables precise measurements of the profile of an x-ray beam using a knife edge and using diffracted and transmitted x-rays. The knife edge (4) is formed of a heavy metal which advances the phase of an x-ray passing therethrough and is fabricated in such a manner that the thickness may change in the longitudinal direction continuously or in a stepwise fashion.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: June 3, 2014
    Assignees: JTEC Corporation, Osaka University
    Inventors: Kazuto Yamauchi, Hidekazu Mimura, Hiromi Okada
  • Patent number: 8734661
    Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.
    Type: Grant
    Filed: October 14, 2008
    Date of Patent: May 27, 2014
    Assignee: Ebara Corporation
    Inventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi
  • Patent number: 8679286
    Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of ?m. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: March 25, 2014
    Assignee: Ebara Corporation
    Inventors: Kazuto Yamauchi, Yasuhisa Sano
  • Patent number: 8654097
    Abstract: An electrostatic capacitive touch sensor device includes sensing electrode provided at a plurality of positions, a high-frequency signal source that applies a high-frequency signal to the sensing electrode through a predetermined impedance element, a wiring portion that connects the sensing electrode and the impedance element, a shield portion provided to embrace the sensing electrodes and the connecting pattern, and a shield signal source that applies a shield signal to the shield portion and has the same phase and amplitude as the high-frequency signal source.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: February 18, 2014
    Assignees: Mitsubishi Jidosha Kogyo Kabushiki Kaisha, Visteon Japan, Ltd.
    Inventors: Kazuto Yamauchi, Yasunori Murayama, Sadahiko Tanaka, Keitaro Takizawa, Kouichi Yamanoue