Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).

Abstract: Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.

Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).

Abstract: A gas discharge structure, and a device and a method for plasma processing which are capable of a uniform gas discharge and have improved maintainability. A pendulum gate valve (15) is eccentrically mounted to a vacuum chamber (11) in such a manner that the center (Mc) of the area of an opening region (M) corresponding to the center value of the recommended value for the use of the opening ratio of the pendulum gate valve (15) coincides with the axis center (Cc) of the vacuum chamber (11).

Abstract: Provided are a plasma processing apparatus and a plasma processing method, wherein a substrate supporting table is supported such that nonuniformity of heat release is eliminated and maintenance is facilitated. In the plasma CVD apparatus (10), a supporting beam (12), which has inside thereof a through hole (12c) penetrating the facing side walls (11a) of a vacuum chamber (11) and traverses the vacuum chamber (11) by passing through the center of the vacuum chamber, is integrally formed with the vacuum chamber (11). In the center portion of the upper surface of the supporting beam (12), an upper surface opening (12a) for attaching a substrate supporting table (13) is provided, and a substrate supporting table (13) having a cylindrical shape is attached to the upper surface opening (12a) by having therebetween a first seal member that seals together the vacuum side and the atmosphere side.

Abstract: Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (11), the inner cylinder (15) composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions (15a) in point-contact with the vacuum chamber (11) are provided on the lower end portion of the inner cylinder (15), the alumite film (16) on the leading end portion (15b) of each of the protruding portion (15a) is removed, and the inner cylinder and the vacuum chamber (11) are electrically connected to each other.

Abstract: Disclosed is the structure of a substrate supporting table wherein corrosion of a bellows is eliminated, generation of dusts from the bellows is suppressed, and the volume and the weight of the sections to be driven are reduced. A plasma processing apparatus is also disclosed. In the substrate supporting table for the plasma processing apparatus (10), a cylindrical inner tube (12), the bellows (13), an outer tube (14) and a cover member (15) are sequentially disposed concentrically from the inner side, and a drive member (21) to be driven by means of a drive mechanism (24) is attached to the rear surface of the placing table (16) through an opening (11b) and the inside of the inner tube (12).

Abstract: A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas piping are equally supplied to a plurality of supply nozzles, a plurality of auxiliary gas supply nozzles, and a plurality of cleaning gas nozzles. The configuration of the container can be simplified without complicating pipings for the gases.

Abstract: Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (5), a process chamber (2) is supplied with an inert gas for carrying in and out the substrate (5), pressure fluctuation in the process chamber (2) is adjusted to be within a prescribed range, and plasma (20) of the inert gas supplied in the process chamber (2) is generated. The density of the plasma (20) in the transfer area of the substrate (5) is reduced by controlling plasma power to be in a prescribed range, and the substrate (5) is carried in and out to and from a supporting table (4).

Abstract: A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

Abstract: An electrode pattern of an electrostatic chuck includes linear portions in a radial direction and a plurality of concentric C-shaped portions branching out from the linear portions. The linear portions are disposed opposite to each other in a diametrical direction and are such that they lie on a line that is almost straight. The C-shaped portions are engaged alternately like teeth of a comb.

Abstract: In a film-forming apparatus for forming a thin film (15) on a substrate (6) by supplying a gas (13) through a gas nozzle (14) into a vacuum chamber (1) and transforming the gas (13) into a plasma by applying a current to a high-frequency antenna (7), a ceramic inner cylinder (20) is arranged so as to contact with the vacuum chamber (1) at only a small area of the cylinder for preventing adhesion of the film-forming component onto the inner wall of the vacuum chamber (1). In this film-forming apparatus, it is possible to suppress generation of particles and to reduce the workload of the cleaning process.

Abstract: The present invention provides a method for producing optically active flurbiprofen. The method of the present invention includes mixing racemic flurbiprofen and (S)- or (R)-3-methyl-2-phenylbutylamine in an organic solvent to produce a diastereomeric salt; and treating the diastereomeric salt with an acid in a second solvent. In the method of the present invention, flurbiprofen having a desired absolute configuration can be obtained very efficiently without repeating the procedure for optical resolution a plurality of times.

Abstract: A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas piping are equally supplied to a plurality of supply nozzles, a plurality of auxiliary gas supply nozzles, and a plurality of cleaning gas nozzles. The configuration of the container can be simplified without complicating pipings for the gases.

Abstract: The present invention provides a method for producing optically active flurbiprofen. The method of the present invention includes mixing racemic flurbiprofen and (S)- or (R)-3-methyl-2-phenylbutylamine in an organic solvent to produce a diastereomeric salt; and treating the diastereomeric salt with an acid in a second solvent. In the method of the present invention, flurbiprofen having a desired absolute configuration can be obtained very efficiently without repeating the procedure for optical resolution a plurality of times.

Abstract: A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

Abstract: In a solid electrolytic capacitor, an anode terminal (27 in FIG. 3) has a T-shaped section in which two plate pieces intersect at right angles. One of the two plate pieces is exposed to the mounting surface of the solid electrolytic capacitor, while the other is perpendicularly erected to an anode lead (11). The two plate pieces are made of a series of continuous members.

Abstract: An electrode pattern (3) of an electrostatic chuck (100) includes linear portions (31a, 31b) in a radial direction and a plurality of [i]concentric C-shaped portions (32a, 32b) branching out from the linear portions (31a, 31b). The linear portions are disposed opposite to each other in a diametrical direction and are roughly in a straight line. The C-shaped portions (32a, 32b) are in the form of concentric circles and these concentric circles are engaged alternately like teeth of a comb.

Abstract: In a solid electrolytic capacitor, an anode terminal (27 in FIG. 3) has a T-shaped section in which two plate pieces intersect at right angles. One of the two plate pieces is exposed to the mounting surface of the solid electrolytic capacitor, while the other is perpendicularly erected to an anode lead (11). The two plate pieces are made of a series of continuous members.

Abstract: A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas piping are equally supplied to a plurality of supply nozzles, a plurality of auxiliary gas supply nozzles, and a plurality of cleaning gas nozzles. The configuration of the container can be simplified without complicating pipings for the gases.