Abstract: The present invention relates to a method for manufacturing a fiber-reinforced composite material by impregnating reinforcing fibers with a resin composition. The method includes steps of: laminating the reinforcing fibers and the resin composition on a carrier film to prepare a laminate; and pressing and advancing the laminate while rotating a plurality of impregnation rolls to impregnate the reinforcing fibers with the resin composition. At least two impregnation rolls adjacent to each other among the impregnation rolls have projecting and depressed grooves on respective surfaces. Between a projection and a projection on a surface of one of the two impregnation rolls adjacent to each other, a projection on a surface of the other of the two impregnation rolls adjacent to each other is disposed. The impregnation rolls are substantially on the same plane.

Abstract: An epitaxial wafer for an ultraviolet ray emission device including: a first supporting substrate being transparent for ultraviolet ray and having heat resistance; a seed crystal layer of an AlxGa1-xN (0.5<x?1) single crystal bonded on the first supporting substrate by laminating; and an epitaxial layer on the seed crystal layer, the epitaxial layer having: a first conductive clad layer containing AlyGa1-yN (0.5<y?1) as a main component; an AlGaN-based active layer; and a second conductive clad layer containing AlzGa1-zN (0.5<z?1) as a main component that are stacked and grown in this order. An inexpensive epitaxial wafer for an ultraviolet ray emission device having good light extraction efficiency and high quality and having an epitaxial layer of a III-group nitride such as AlN; and a method for manufacturing the same.

Abstract: A nitride semiconductor substrate includes: a heat-resistant support substrate having a core including nitride ceramic enclosed in an encapsulating layer; a planarization layer provided on the heat-resistant support substrate; a silicon single crystal layer having a carbon concentration of 1×1017 atoms/cm3 or higher provided on the planarization layer; a carbonized layer containing silicon carbide as a main component and having a thickness of 4 to 2000 nm provided on the silicon single crystal layer; and a nitride semiconductor layer provided on the carbonized layer. This provides a high-quality nitride semiconductor substrate (a nitride semiconductor substrate particularly suitable for GaN-based high mobility transistors (HEMT) for high-frequency switches, power amplifiers, and power switching devices); and a method for producing the same.

Abstract: The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

Abstract: Provided are a piezoelectric substrate and a manufacturing method thereof, by which bonding strength enough for forming a piezoelectric layer on an insulating substrate having a significantly small linear expansion coefficient can be obtained through ion implantation even by heat treatment at 100° C. or less. A piezoelectric composite substrate 10 having successively stacked insulating substrate 2, interlayer 3, and piezoelectric layer 1a is manufactured by laminating a piezoelectric single-crystal substrate surface having an ion implantation layer 1a thereon and an insulating substrate 2 having a linear expansion coefficient less than that of the piezoelectric single-crystal substrate 1 with a difference in a range of 14×10?6/K to 16×10?6/K via the interlayer 3 to obtain a bonded body 4, and after heat treatment, leaving the ion implantation layer 1a as a piezoelectric layer and releasing the remaining portion 1b of the piezoelectric single-crystal substrate from the bonded body 4.

Abstract: A base substrate (1) for a group III-V compound crystal according to the present invention includes: a ceramic core layer (2); an impurity encapsulating layer (3) configured to encapsulate the ceramic core layer (2); a bonding layer (4) on the impurity encapsulating layer; and a processed layer (5) on the bonding layer. The impurity encapsulating layer (3) is a layer made of a composition represented by a composition formula SiOXNY (here, x=0 to 2, y=0 to 1.5, and x+y>0), the bonding layer (4) is a layer made of a composition represented by a composition formula SiOx?Ny? (here, x?=1 to 2, and y?=0 to 2, and the processed layer (5) is a seed crystal layer. According to the present invention, it is possible to provide the base substrate for a group III-V compound crystal and a method for producing the same for obtaining a group III-V compound crystal having a large diameter and high quality.

Abstract: Provided is a method of manufacturing a composite substrate equipped with a piezoelectric single-crystal film having good film-thickness uniformity and not causing deterioration in properties even if ion implantation is performed.

Abstract: A method for manufacturing a group III nitride substrate is described. The method involves forming group III nitride films having a group III element face on a surface thereof, on both surfaces of a substrate, so as to produce a group III nitride film carrier. The group III nitride film carrier is subjected to ion implantation and adhered to a base substrate containing polycrystals containing a group III nitride as a major component. The group III nitride film carrier is spaced from the base substrate to transfer the ion-implanted region to the base substrate, so as to form a group III nitride film having an N face on a surface thereof on the base substrate. A group III nitride film is formed on the group III nitride by a THVPE method, so as to produce a thick film of a group III nitride film.

Abstract: The present invention includes: transferring a C-plane sapphire thin film 1t having an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate 11 and covering the surface of the C-plane sapphire thin film 1t with a surface treatment layer 11a made of AlN; having GaN grow epitaxially on the surface treatment layer 11a; ion-implanting a GaN film 13; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate 12; performing peeling at an ion implantation region 13ion in the GaN film 13 and transferring a GaN thin film 13a onto the support substrate 12; and obtaining a GaN laminate substrate 10.

Abstract: The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

Abstract: The group III compound substrate manufacturing method of the present invention is a method for manufacturing a group III compound substrate by growing a group III compound crystal (1) by vapor phase epitaxy on a seed crystal (3) placed and fixed on a susceptor (2), the method comprising using a cleavable and separable material for at least one of the susceptor (2) and the seed crystal (3). A group III compound substrate manufactured by the group III compound substrate manufacturing method of the present invention is also provided. The present invention can provide the group III compound substrate manufacturing method which can manufacture a large-sized GaN crystal substrate of higher quality at a low cost while taking advantage of the high film forming rate of the vapor phase epitaxy method, and can provide a substrate manufactured by the method.

Abstract: A group III nitride substrate manufacturing apparatus including a rotating susceptor for holding and rotating a seed crystal in a reaction container, a heating means for heating the seed crystal, a revolving susceptor for placing thereon and revolving the rotating susceptor, a first gas ejection port for ejecting a gas of a chloride of a group III element at a predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, a second gas ejection port for ejecting a nitrogen-containing gas at the predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, a third gas ejection port for ejecting an inert gas from between the first gas ejection port and the second gas ejection port and at the predetermined angle with respect to the direction of the axis of rotation of the revolving susceptor, and an exhaust means for exhausting gas; and a group III nitride substrate manufacturing method performed by using the same.

Abstract: The present invention includes: transferring a C-plane sapphire thin film 1t having an off-angle of 0.5-5° onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate 11 and covering the surface of the C-plane sapphire thin film 1t with a surface treatment layer 11a made of AlN; having GaN grow epitaxially on the surface treatment layer 11a; ion-implanting a GaN film 13; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate 12; performing peeling at an ion implantation region 13ion in the GaN film 13 and transferring a GaN thin film 13a onto the support substrate 12; and obtaining a GaN laminate substrate 10.

Abstract: A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

Abstract: An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.

Abstract: An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.

Abstract: A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

Abstract: A thermally oxidized heterogeneous composite substrate provided with a single crystal silicon film on a handle substrate, said heterogeneous composite substrate being obtained by, prior to a thermal oxidization treatment at a temperature exceeding 850° C., conducting an intermediate heat treatment at 650-850° C. and then conducting the thermal oxidization treatment at a temperature exceeding 850° C. According to the present invention, a thermally oxidized heterogeneous composite substrate with a reduced number of defects after thermal oxidization can be obtained.

Abstract: The lithium tantalate single crystal substrate is a rotated Y-cut LiTaO3 single crystal substrate having a crystal orientation of 36° Y-49° Y cut characterized in that: the substrate is diffused with Li from its surface into its depth such that it has a Li concentration profile showing a difference in the Li concentration between the substrate surface and the depth of the substrate; and the substrate is treated with single polarization treatment so that the Li concentration is substantially uniform from the substrate surface to a depth which is equivalent to 5-15 times the wavelength of either a surface acoustic wave or a leaky surface acoustic wave propagating in the LiTaO3 substrate surface.

Abstract: A hybrid substrate has an SOI structure having a good silicon active layer, without defects such as partial separation of the silicon active layer is obtained without trimming the outer periphery of the substrate. An SOI substrate is obtained by sequentially laminating a first silicon oxide film and a silicon active layer in this order on a silicon substrate. A terrace portion that does not have the silicon active layer is formed in the outer peripheral portion of the silicon substrate surface. A second silicon oxide film is formed on the silicon active layer surface of the SOI substrate The bonding surfaces of the SOI substrate and a supporting substrate that has a thermal expansion coefficient different from that of the SOI substrate is subjected to an activation treatment. The SOI substrate and the supporting substrate are bonded with the second silicon oxide film being interposed therebetween.