Abstract: A solid-state imaging device includes: a photoelectric conversion element that is disposed on a semiconductor substrate and generates signal charges by photoelectric conversion; a first diffusion layer that holds signal charges transferred from the photoelectric conversion element; a capacitive element that holds signal charges overflowing from the photoelectric conversion element; an amplifier transistor that outputs a signal according to the signal charges in the first diffusion layer; a first contact that is connected to the first diffusion layer; a second contact that is connected to a gate of the amplifier transistor; and a first wire that connects the first contact and the second contact. A shortest distance between the semiconductor substrate and the first wire is less than a shortest distance between the semiconductor substrate and the capacitive element.

Abstract: A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

Abstract: A solid-state imaging device includes: a photoelectric conversion element that is disposed on a semiconductor substrate and generates signal charges by photoelectric conversion; a first diffusion layer that holds signal charges transferred from the photoelectric conversion element; a capacitive element that holds signal charges overflowing from the photoelectric conversion element; an amplifier transistor that outputs a signal according to the signal charges in the first diffusion layer; a first contact that is connected to the first diffusion layer; a second contact that is connected to a gate of the amplifier transistor; and a first wire that connects the first contact and the second contact. A shortest distance between the semiconductor substrate and the first wire is less than a shortest distance between the semiconductor substrate and the capacitive element.

Abstract: A solid-state imaging device includes: a first semiconductor substrate including a light receiver that receives incident light; and a second semiconductor substrate including an image processing circuit that processes a signal from the light receiver and generates an image signal. The second semiconductor substrate includes: a nonvolatile memory including a region in which use history data is stored; and a control circuit (use history securing circuit) that restricts output of the image signal when the use history data is stored in the nonvolatile memory.

Abstract: A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

Abstract: A solid-state imaging apparatus includes: an overflow element group that accumulates a signal charge that overflows from a photodiode; and a floating diffusion layer that selectively holds a signal charge transferred from the photodiode and a signal charge transferred from the overflow element group. The overflow element group includes m groups (m?2) connected in series in stages, each group including an overflow element and a storage capacitive element. An overflow element among the groups transfers, to the storage capacitive element included in the same group as the overflow element, a signal charge that overflows from the photodiode or a signal charge from an upstream storage capacitive element among the groups.

Abstract: A solid-state image capture device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate includes a first connection and a pixel array in which a plurality of pixels are arranged in a matrix. The second semiconductor substrate includes a second connection and a pad area including a plurality of pad electrodes for electrical connection with external equipment. The second semiconductor substrate controls the pixel array. The first and second semiconductor substrates are stacked and joined together, with the first and second connections electrically connected to each other. The first and second semiconductor substrates are substantially equal in size, and the pad electrodes are included in only the second semiconductor substrate.

Abstract: A solid-state imaging device includes: a first semiconductor substrate including a light receiver that receives incident light; and a second semiconductor substrate including an image processing circuit that processes a signal from the light receiver and generates an image signal. The second semiconductor substrate includes: a nonvolatile memory including a region in which use history data is stored; and a control circuit (use history securing circuit) that restricts output of the image signal when the use history data is stored in the nonvolatile memory.

Abstract: A solid-state image capture device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate includes a first connection and a pixel array in which a plurality of pixels are arranged in a matrix. The second semiconductor substrate includes a second connection and a pad area including a plurality of pad electrodes for electrical connection with external equipment. The second semiconductor substrate controls the pixel array. The first and second semiconductor substrates are stacked and joined together, with the first and second connections electrically connected to each other. The first and second semiconductor substrates are substantially equal in size, and the pad electrodes are included in only the second semiconductor substrate.

Abstract: A 3D imaging apparatus includes: a first image capturing camera generating a base image to be used for obtaining a first range image showing a three-dimensional character of an object; a second image capturing camera generating a reference image to be used for obtaining the first range image; a stereo matching unit searching for corresponding pixels between the base image and the reference image, and generating a first range image by calculating a disparity between the corresponding pixels; and a light source emitting to the object infrared light whose intensity is modulated. The first image capturing camera further generates a second range image by receiving a reflected light in synchronization with the modulated intensity. The reflected light is the infrared light reflected off the object. The second range image includes range information on a range between a point of reflection off the object and the first imaging unit.

Abstract: A solid-state imaging apparatus is disclosed in which, in a first unit cell, light is collected to maximize an amount of light received when the light is incident at a first angle-of-incidence, and in a second unit cell adjacent to the first unit cell, light is collected to maximize an amount of light received when the light is incident at a second angle-of-incidence, the amount of light received when the light is incident at a third angle-of-incidence on the first unit cell is equal to the amount of light received when the light is incident at the third angle-of-incidence on the second unit cell, the first angle-of-incidence is greater than the third angle-of-incidence by a predetermined amount, and the second angle-of-incidence is smaller than the third angle-of-incidence by the predetermined amount.

Abstract: A solid-state imaging device includes: unit pixels each having a light-receiving element which is divided into line widths shorter than or equal to a wavelength of light; a plurality of light-transmissive films in a concentric structure; and an effective refractive index distribution. Among the light-transmissive films, a light-transmissive film closest to a center of the concentric structure has an outer edge in a shape of a true circle, and a light-transmissive film far from the center of the concentric structure has an outer edge in a shape of an oval, a ratio of a long axis to a short axis of the oval increases as the light-transmissive film is farther away from the center of the concentric structure, and a direction of the long axis of the oval is orthogonal to a vector which connects the center of the concentric structure and a center of the solid-state imaging device.

Abstract: An imaging apparatus includes: an optical lens; light receiving units each reading a photoelectric conversion signal; microlenses each placed for every two or more of the adjacent light receiving units; a signal generating unit generating (i) a full-addition signal by adding all of the photoelectric conversion signals obtained in a predetermined frame by the two or more adjacent light receiving units, (ii) a partial addition signal by adding the photoelectric conversion signals obtained by at least one but not all of the two or more adjacent light receiving units, and (iii) non-addition independent signals that are the photoelectric conversion signals of one of the light receiving units; a phase difference detecting unit detecting a focal point from the partial addition signal and the non-addition independent signals; and a camera YC processing unit generating a main image from the full-addition signal.

Abstract: A solid-state imaging apparatus includes unit pixels each having a light-collecting element for collecting incident light, the light-collecting element: is divided into a plurality of zones each having a ring shape of concentric structure and a line width shorter than a wavelength of the incident light; and has an effective refractive index distribution controlled according to a combination of the zones, and in at least one of the zones, a light-transmissive film which is included in the zone is divided in a circumferential direction of the concentric structure at an interval shorter than the wavelength of the incident light.

Abstract: A control unit calculates the color temperature using at least a first visible light signal and a near-infrared signal when the amount of the near-infrared signal is larger than a predetermined amount. The first visible light signal is a signal generated by photoelectrically converting visible light. The near-infrared signal is a signal generated by photoelectrically converting near-infrared light.

Abstract: An imaging apparatus includes: an optical lens; light receiving units each reading a photoelectric conversion signal; microlenses each placed for every two or more of the adjacent light receiving units; a signal generating unit generating (i) a full-addition signal by adding all of the photoelectric conversion signals obtained in a predetermined frame by the two or more adjacent light receiving units, (ii) a partial addition signal by adding the photoelectric conversion signals obtained by at least one but not all of the two or more adjacent light receiving units, and (iii) non-addition independent signals that are the photoelectric conversion signals of one of the light receiving units; a phase difference detecting unit detecting a focal point from the partial addition signal and the non-addition independent signals; and a camera YC processing unit generating a main image from the full-addition signal.

Abstract: The solid-state imaging device includes light collecting elements each of which includes a first light-transmissive film group and a second light transmissive film group adjacent to each other. The first light-transmissive film group and the second light transmissive film group have mutually different effective refractive index distributions for guiding at least two types of incident light rays to the light receiving element.

Abstract: A solid-state imaging apparatus is disclosed in which, in a first unit cell, light is collected to maximize an amount of light received when the light is incident at a first angle-of-incidence, and in a second unit cell adjacent to the first unit cell, light is collected to maximize an amount of light received when the light is incident at a second angle-of-incidence, the amount of light received when the light is incident at a third angle-of-incidence on the first unit cell is equal to the amount of light received when the light is incident at the third angle-of-incidence on the second unit cell, the first angle-of-incidence is greater than the third angle-of-incidence by a predetermined amount, and the second angle-of-incidence is smaller than the third angle-of-incidence by the predetermined amount.

Abstract: A solid-state imaging apparatus includes unit pixels each having a light-collecting element for collecting incident light, the light-collecting element: is divided into a plurality of zones each having a ring shape of concentric structure and a line width shorter than a wavelength of the incident light; and has an effective refractive index distribution controlled according to a combination of the zones, and in at least one of the zones, a light-transmissive film which is included in the zone is divided in a circumferential direction of the concentric structure at an interval shorter than the wavelength of the incident light.

Abstract: A solid-state imaging device includes: unit pixels each having a light-receiving element which is divided into line widths shorter than or equal to a wavelength of light; a plurality of light-transmissive films in a concentric structure; and an effective refractive index distribution. Among the light-transmissive films, a light-transmissive film closest to a center of the concentric structure has an outer edge in a shape of a true circle, and a light-transmissive film far from the center of the concentric structure has an outer edge in a shape of an oval, a ratio of a long axis to a short axis of the oval increases as the light-transmissive film is farther away from the center of the concentric structure, and a direction of the long axis of the oval is orthogonal to a vector which connects the center of the concentric structure and a center of the solid-state imaging device.