Patents by Inventor Kazuumi INUBUSHI

Kazuumi INUBUSHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11158785
    Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: October 26, 2021
    Assignee: TDK CORPORATION
    Inventors: Shinto Ichikawa, Kazuumi Inubushi, Katsuyuki Nakada
  • Publication number: 20210286028
    Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a first non-magnetic layer; and a second non-magnetic layer, wherein, the first ferromagnetic layer and the second ferromagnetic layer are formed so that at least one of them includes a Heusler alloy layer, the first non-magnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer, the second non-magnetic layer is in contact with any surface of the Heusler alloy layer and has a discontinuous portion with respect to a lamination surface, and the second non-magnetic layer is made of a material different from that of the first non-magnetic layer and is a (001)-oriented oxide containing Mg.
    Type: Application
    Filed: February 2, 2021
    Publication date: September 16, 2021
    Applicant: TDK CORPORATION
    Inventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Publication number: 20210265562
    Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.
    Type: Application
    Filed: December 9, 2020
    Publication date: August 26, 2021
    Applicant: TDK CORPORATION
    Inventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Publication number: 20210193913
    Abstract: A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
    Type: Application
    Filed: December 22, 2020
    Publication date: June 24, 2021
    Applicant: TDK CORPORATION
    Inventors: Shinto ICHIKAWA, Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Publication number: 20210184103
    Abstract: The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.
    Type: Application
    Filed: December 8, 2020
    Publication date: June 17, 2021
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Shinto ICHIKAWA
  • Publication number: 20210165058
    Abstract: A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Ni?1Al?2X?3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<?<0.5 in a case of ?=?3/(?1+?2+?3)].
    Type: Application
    Filed: January 14, 2021
    Publication date: June 3, 2021
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Patent number: 10971679
    Abstract: A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag, Ag?X1-???(1) where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<?<1.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: April 6, 2021
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 10964341
    Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<y<1.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: March 30, 2021
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 10937951
    Abstract: A magnetoresistance effect element according to an aspect of the present disclosure includes a first ferromagnetic layer as a magnetization fixed layer including a ferromagnetic Heusler alloy, a second ferromagnetic layer as a magnetization free layer including a ferromagnetic Heusler alloy, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and the nonmagnetic spacer layer includes a nonmagnetic Fe group, Co group, or Ni group Heusler alloy.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: March 2, 2021
    Assignee: TDK CORPORATION
    Inventors: Katsuyuki Nakada, Kazuumi Inubushi
  • Patent number: 10937451
    Abstract: A magnetoresistive effect element according to the present invention includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer comprises an Al alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Al. Al?X1-???(1) [wherein, X indicates one element selected from the group consisting of Li, N, Mg, Si, Sc, Cr, Fe, Ni, Cu, Zn, Ga, Ge, Zr, Ru, Pd, Ag, Sn, W, Pt, Au and Th, and ? is 0.5<?<1.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: March 2, 2021
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 10937954
    Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, and at least one of a first nonmagnetic insertion layer provided directly on a lower surface of the nonmagnetic layer and a second nonmagnetic insertion layer provided directly on an upper surface of the nonmagnetic layer. The first nonmagnetic insertion layer and the second nonmagnetic insertion layer include an Ag alloy represented by General Formula (1): Ag?X1-? where X indicates one element selected from the group consisting of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0<?<1.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: March 2, 2021
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 10921392
    Abstract: A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Ni?1Al?2X?3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<?<0.5 in a case of ?=?3/(?1+?2+?3)].
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: February 16, 2021
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Publication number: 20210043226
    Abstract: A magnetoresistance effect element and a Heusler alloy in which a state change due to annealing does not easily occur. The element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2Fe?Z? is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Al, Si, Ga, Ge, and Sn, ? and ? satisfy 2.3??+?, ?<?, and 0.5<?<1.9, and the substitution element is one or more elements selected from the group consisting of elements having a melting point higher than that of Fe among elements of Groups 4 to 10.
    Type: Application
    Filed: August 4, 2020
    Publication date: February 11, 2021
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Publication number: 20210043682
    Abstract: Provided are magnetoresistance effect element and a Heusler alloy in which an amount of energy required to rotate magnetization can be reduced. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, in which at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy in which a portion of elements of an alloy represented by Co2Fe?Z? is substituted with a substitution element, in which Z is one or more elements selected from the group consisting of Mn, Cr, Al, Si, Ga, Ge, and Sn, ? and ? satisfy 2.3??+?, ?<?, and 0.5<?<1.9, and the substitution element is an element different from the Z element and has a smaller magnetic moment than Co.
    Type: Application
    Filed: August 6, 2020
    Publication date: February 11, 2021
    Applicant: TDK CORPORATION
    Inventors: Katsuyuki NAKADA, Kazuumi INUBUSHI
  • Publication number: 20210043225
    Abstract: To provide a magnetoresistance effect element that can further increase an MR ratio (Magnetoresistance ratio) and an RA (Resistance Area product). The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy represented by the following General Formula (1): Co2Fe?X???(1) (in Formula (1), X represents one or more elements selected from the group consisting of Mn, Cr, Si, Al, Ga and Ge, and ? and ? represent numbers that satisfy 2.3??+?, ?<?, and 0.5<?<1.9).
    Type: Application
    Filed: August 4, 2020
    Publication date: February 11, 2021
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA, Tetsuya UEMURA
  • Publication number: 20200388302
    Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<y<1.
    Type: Application
    Filed: August 21, 2020
    Publication date: December 10, 2020
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Publication number: 20200303634
    Abstract: A magnetoresistive effect element according to the present invention includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer comprises an Al alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Al. Al?X1-???(1) [wherein, X indicates one element selected from the group consisting of Li, N, Mg, Si, Sc, Cr, Fe, Ni, Cu, Zn, Ga, Ge, Zr, Ru, Pd, Ag, Sn, W, Pt, Au and Th, and ? is 0.5<?<1.
    Type: Application
    Filed: March 13, 2020
    Publication date: September 24, 2020
    Applicant: TDK CORPORATION
    Inventors: Kazuumi INUBUSHI, Katsuyuki NAKADA
  • Patent number: 10783906
    Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<?<1.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: September 22, 2020
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 10784438
    Abstract: A magnetoresistive effect element according to one aspect of the present disclosure includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The spacer layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The spacer layer includes an Mn alloy represented by General Formula (1). Mn?X1-???(1) (in the Formula, X is at least one metal selected from the group consisting of Al, V, Cr, Cu, Zn, Ag, Au, an NiAl alloy, an AgMg alloy, and an AgZn alloy, and ? is 0<?<0.5.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: September 22, 2020
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 10665374
    Abstract: There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: May 26, 2020
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada, Tomoyuki Sasaki