Abstract: According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

Abstract: A semiconductor device includes a holding member including a component placement part; a back plate; a substrate including a mounting surface facing the holding member, and a back surface facing the back plate; a plurality of mounting pads located at the mounting surface; a package component including a terminal placement surface facing the mounting surface; and a plurality of package terminals located at the terminal placement surface. The substrate is held between the holding member and the back plate. The package component is located in the component placement part, and held between the holding member and the substrate. The package terminals are in direct contact with the mounting pads.

Abstract: A semiconductor device includes a substrate; a holding member located on the substrate, the holding member including a module placement part and an opening arranged in a first direction; an optical module located in the module placement part and mounted on the substrate; and an optical fiber passing through the opening, the optical fiber being connected with the optical module. The holding member includes a first corner part and a second corner part. The opening is between the first corner part and the second corner part in a direction crossing the first direction. The first corner part and the second corner part are beveled.

Abstract: A semiconductor device includes a substrate; a holding member located on the substrate, the holding member including an optical fiber holding part and a module placement part arranged in a first direction; an optical module located in the module placement part and mounted on the substrate; an optical fiber passing through the optical fiber holding part, the optical fiber being connected with the optical module; and a first leaf spring and a second leaf spring located in the optical fiber holding part, the first leaf spring and the second leaf spring holding the optical fiber between the first leaf spring and the second leaf spring in a direction crossing the first direction.

Abstract: A charged particle beam deflection device includes a substrate; a plurality of apertures provided in the substrate; a plurality of electrodes deflecting charged particle beams passing through the apertures; a plurality of light-receiving elements controlling voltages applied to the plurality of electrodes; a first optical coupler coupling continuous light to the substrate; a light distributor distributing light coupled by the first optical coupler into a two-dimensional plane; a plurality of modulators performing intensity modulation of light distributed by the light distributor; and a plurality of second optical couplers coupling the modulated light to the light-receiving elements.

Abstract: A charged particle beam deflection device includes a substrate; a plurality of apertures provided in the substrate; a plurality of electrodes deflecting charged particle beams passing through the apertures; a plurality of light-receiving elements controlling voltages applied to the plurality of electrodes; a first optical coupler coupling continuous light to the substrate; a light distributor distributing light coupled by the first optical coupler into a two-dimensional plane; a plurality of modulators performing intensity modulation of light distributed by the light distributor; and a plurality of second optical couplers coupling the modulated light to the light-receiving elements.

Abstract: According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

Abstract: According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

Abstract: According to one embodiment, the first process of forming a first light-reflecting structure including forming a patterned dielectric layer on a substrate, forming a first high refractive index layer on the substrate and the dielectric layer, planarizing the first high refractive index layer, forming a mask layer on the first high refractive index layer, forming a periodic structure in the mask layer and the first high refractive index layer, the periodic structure having openings separated at a constant period, forming a low refractive index layer on the mask layer and filling the periodic structure with the low refractive index layer, and performing chemical mechanical polishing to cause the mask layer and the low refractive index layer to form substantially the same plane.

Abstract: According to one embodiment, a semiconductor light receiving element includes at least a first periodic structure, a semiconductor multilayered film, and a light confinement layer. The first periodic structure is provided in a light incident portion, and splits and converts, into non-perpendicular light in two or more directions, light incident from a direction perpendicular to the light incident portion. The semiconductor multilayered film includes a light absorption layer and is provided on the first periodic structure in contact with the first periodic structure. The light confinement layer is provided on the semiconductor multilayered film. A refractive index of the light confinement layer is lower than a refractive index of the semiconductor multilayered film.

Abstract: According to one embodiment, a semiconductor light-emitting element includes a ring-shaped light-emitting portion provided on a substrate, a mode-control light waveguide of Si provided on an upper or a lower surface side of the light-emitting portion, and including at least two portions located close to the light-emitting portion, and an output light waveguide of Si provided on the upper or the lower surface side, and including a portion located close to the light-emitting portion. The mode-control light waveguide has a structure for coupling light traveling in one of a clockwise circulating mode and a counterclockwise circulating mode, and feeding back the light in the other of the clockwise circulating mode and the counterclockwise circulating mode.

Abstract: A semiconductor light-emitting device according to one embodiment includes a substrate, a first light reflection structure provided in contact with the substrate, a buried layer surrounding the first light reflection structure, an optical semiconductor structure including an active layer, provided above the first light reflection structure, a second light reflection structure provided above the optical semiconductor structure, and a pair of electrodes which supply current to the optical semiconductor structure. The surface of the first light reflection structure and the surface of the buried layer are included in the same plane.

Abstract: A wavelength filter of an embodiment includes: a first layer having a plurality of first regions containing a first material and a plurality of second regions containing a second material having a refractive index higher than that of the first material, each of the second regions provided between each of the first regions; a second layer provided on the first layer and containing the first material; and a third layer having a plurality of third regions containing the first material, each of the third regions provided on the second layer above each of the first regions, and a plurality of fourth regions containing the second material, each of the fourth regions provided between each of the third regions.

Abstract: According to one embodiment, a semiconductor optical device including a substrate, a filter layer arranged on the substrate, and a semiconductor light receiving element arranged on the filter layer, wherein the filter layer includes a periodic structure through which a light of a desired wavelength range in incident light is transmitted, and which is constituted of different refractive index materials.

Abstract: A temperature measurement device includes a light source, a first optical waveguide disposed on a surface of a desired region of an object to be measured, a second optical waveguide connected to one side of the first optical waveguide, a third optical waveguide connected to the other side of the first optical waveguide and guiding the lights guided from the light source to the first optical waveguide, a first filter transmitting light in a first frequency band among the lights, a second filter transmitting light in a second frequency band among the lights, a detector circuit detecting each intensity of the lights in the first frequency band and the second frequency band, and a controller calculating a temperature of the desired region from the detected intensity of the each light in the first and second frequency bands.

Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a semiconductor light emitting structure including an active layer, a first light reflecting structure disposed between the substrate and the semiconductor light emitting structure, a second light reflecting structure disposed on an upper side of the semiconductor light emitting structure and a pair of electrodes applying a current to the semiconductor light emitting structure. At least one of the first and second light reflecting structures is a multilayer reflective film including a plurality of structure layers, each structure layer including a high refractive index region and a low refractive index region which are disposed such that a refractive index of the structure layer is periodically changed, and a low refractive index layer disposed between two adjacent structure layers.

Abstract: According to one embodiment, a semiconductor photo-receiving device includes a substrate, a light propagation layer and a semiconductor layer including a lowest layer and upper layers. The upper layers include an optical absorption layer. The light propagation layer includes a first light input layer, a first annular layer at a desired distance from the first light input layer, and a first optical waveguide connecting the first light input layer and annular layer. The lowest layer of the semiconductor layer includes a second light input layer, a second annular layer at a desired distance from the second light input layer, and a second optical waveguide connecting the second light input layer and annular layer.

Abstract: According to one embodiment, a semiconductor photo-receiving device includes a substrate, a light propagation layer and a semiconductor layer including a lowest layer and upper layers. The upper layers include an optical absorption layer. The light propagation layer includes a first light input layer, a first annular layer at a desired distance from the first light input layer, and a first optical waveguide connecting the first light input layer and annular layer. The lowest layer of the semiconductor layer includes a second light input layer, a second annular layer at a desired distance from the second light input layer, and a second optical waveguide connecting the second light input layer and annular layer.

Abstract: According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.

Abstract: According to one embodiment, a semiconductor light-emitting element includes a ring-shaped light-emitting portion provided on a substrate, a mode-control light waveguide of Si provided on an upper or a lower surface side of the light-emitting portion, and including at least two portions located close to the light-emitting portion, and an output light waveguide of Si provided on the upper or the lower surface side, and including a portion located close to the light-emitting portion. The mode-control light waveguide has a structure for coupling light traveling in one of a clockwise circulating mode and a counterclockwise circulating mode, and feeding back the light in the other of the clockwise circulating mode and the counterclockwise circulating mode.