Abstract: A scanning exposure apparatus includes a projection system, a stage system, a first detector and a control system. The stage system has first and second stages, each of which is movable independently in a plane while holding a substrate. The first detector detects focusing information of a vicinity of an outer circumference of the substrate during a detecting operation. The control system controls the stage system to perform the detecting operation with the first stage, while performing a first exposure operation on the substrate held by the second stage. After the first exposure operation, a second exposure operation for the substrate held on the first stage is performed, in which a shot area in the vicinity of the outer circumference of the substrate is exposed by moving the first stage while adjusting a position of the substrate surface held by the first stage using the detected focusing information.

Abstract: A photocatalyst composition which comprises (A) modified photocatalyst particles, the modified photocatalyst particles (A) being prepared by subjecting particles of a photocatalyst to a modification treatment with at least one modifier compound selected from the group consisting of different compounds each of which independently comprises at least one structural unit selected from the group consisting of a triorganosilane unit, a monooxydiorganosilane unit and a dioxyorganosilane unit; and (B) a binder component comprising a phenyl group-containing silicone optionally containing an alkyl group. A film formed using the above-mentioned photocatalyst composition, a functional composite comprising a substrate and the above-mentioned film formed on the substrate, and a shaped article produced by shaping the above-mentioned photocatalyst composition.

Abstract: A scanning exposure apparatus exposes a sensitive substrate by projecting a pattern formed on a mask onto the sensitive substrate while moving the substrate. The apparatus includes a projection system, a stage system, a first detector and a control system. The projection system is disposed in a path of an exposure beam and projects a pattern image onto the substrate. The stage system is disposed on an image plane side of the projection system, and has first and second stages, each of which is movable independently in a plane while holding the substrate. The first detector detects focusing information of a vicinity of an outer circumference of the substrate during a detecting operation. The control system controls the stage system to perform the detecting operation with the first stage, while performing a first exposure operation with the second stage, the substrate held by the second stage being exposed in the first exposure operation.

Abstract: When a mask is irradiated obliquely with light from a lighting system, the light reflected from the mask is projected onto a wafer through a projection optical system, and the pattern of the mask is transferred to the wafer. If the magnification of the projection optical system changes because of a vertical movement of the mask, a control unit detects the projection position of the mask pattern image on a stage by an aerial image sensor and also detects a mark on the aerial image sensor by a mark detector so as to determine the baseline of the mark detector. Thus, the positional shift of the projection position of the mask pattern image on the wafer due to the change in magnification is corrected to sufficiently restrict or prevent alignment inaccuracy associated with the change in magnification.

Abstract: An exposure apparatus and method displace first and second object holders over a base surface that extends in X- and Y-directions. The first object holder can be displaced from a third area to a second area by using a first displacement unit. The second object holder can be displaced from a first area to the second area by using a second displacement unit. The second area is located between the first and third areas. The first and second object holders are alternately coupled to the second displacement unit, such that the first object holder can be displaced from the second area to the first area using the second displacement unit. The first and second object holders also are alternately coupled to the first displacement unit, such that the second object holder can be displaced from the second area to the third area using the first displacement unit.

Abstract: A method for performing optical adjustments of an exposure apparatus is based on an exposure apparatus having a light source for generating illumination light for exposure, and illumination optics for irradiating a mask with the illumination light generated from the exposure light source so as to imprint a mask pattern on a substrate base.

Abstract: Reflective reticles are disclosed that exhibit reduced internal stress and that are capable of being electrostatically chucked to a reticle stage, even if the reticle substrate is made from low-expansion (LE) glass, LE-ceramic, or analogous reticle substrate. If the reticle is made from LE-glass, for example, the reticle includes a conductive layer formed on the surface of the reticle normally contacting the reticle chuck. Another LE material that can be used is “Super Invar,” which is conductive and does not require a conductive layer per se, but desirably includes a conductive “flattening layer.” Internal stress in the reticle is reduced by using a LE reticle substrate and by controlling the thickness and “stress code” of the conductive and/or flattening layers.

Abstract: Devices are disclosed that cool optical elements with which the devices are associated, most advantageously reflective optical elements such as mirrors and reflective reticles. The devices have especial utility for reducing deformation and other undesired thermal changes of the respective optical elements, such as optical elements used in extremely demanding optical systems such as used in microlithography systems, most notably EUVL systems. Many of the subject devices typically include a heat-receiving plate or analogous feature that receives heat radiated from the optical element across a gap between the optical element and the heat-receiving plate. Some devices include a plate-cooling device for removing heat from the heat-receiving plate. Other devices employ conduction of heat away from the optical element. Yet other devices employ a flowing heat-transfer medium for removing heat from the optical element.

Abstract: On sequentially transferring patterns formed on a mask onto a plurality of divided areas on a substrate, when a new divided area on the substrate exposed, the substrate is moved from the exposure position of the preceding divided area to the exposure position of the new divided area in consideration of thermal expansion of the substrate at this stage. Thereafter, the mask pattern is transferred onto the predetermined divided area. With this process, exposure is performed with the respective shot areas arranged on the substrate at a desired interval in a cooled state after exposure. This makes it possible to improve the overlay accuracy with respect to the subsequent layer while performing exposure with high overlay accuracy with respect to the preceding layer.

Abstract: Two stages WS1, WS2 holding wafers can independently move between a positional information measuring section PIS under an alignment system 24a and an exposing section EPS under a projection optical system PL. The wafer exchange and alignment are performed on the stage WS1, during which wafer W2 is exposed on the stage WS2. A position of each shot area of wafer WS1 is obtained as a relative position with respect to a reference mark formed on the stage WS1 in the section PIS. Relative positional information can be used for the alignment with respect to an exposure pattern when the wafer WS1 is moved to the section EPS to be exposed. Therefore, it is not necessary that a stage position is observed continuously in moving the stage. Exposure operations are performed in parallel by the two wafer stages WS1 and WS2 so as to improve the throughput.

Abstract: Prior to an exposure process in which a pattern formed on a mask is transferred by exposure onto photo-sensitized substrates, the temperature of the mask and/or the temperature of the photosensitized substrate is/are adjusted to an equilibrium temperatures which would be established during an exposure process, so that any inconvenience may be avoided, which may otherwise arise due to temperature changes with time in the environment of the exposure apparatus. Further, in a waiting interval during which no control sequence for exposure of a substrate is performed, a substrate stage for carrying a substrate is caused to wait at a position in the exposure apparatus at which stability against heat is obtained, so that any adverse effects may be minimized, which could occur due to changes in the temperature gradients prevailing in the exposure apparatus.

Abstract: An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.

Abstract: When a mask is irradiated obliquely with light from a lighting system, the light reflected from the mask is projected onto a wafer through a projection optical system, and the pattern of the mask is transferred to the wafer. If the magnification of the projection optical system changes because of a vertical movement of the mask, a control unit detects the projection position of the mask pattern image on a stage by an aerial image sensor and also detects a mark on the aerial image sensor by a mark detector so as to determine the baseline of the mark detector. Thus, the positional shift of the projection position of the mask pattern image on the wafer due to the change in magnification is corrected to sufficiently restrict or prevent alignment inaccuracy associated with the change in magnification.

Abstract: An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.

Abstract: Laser light emitted from a high output laser light source is condensed by a condenser lens to form a condensed point. Xenon (Xe) gas or the like as a target is injected from a nozzle to the condensed point to generate Extreme Ultra Violate (EUV) light, and then the generated EUV light is condensed by a condenser mirror. A transmission filter having a predetermined transmittance with respect to the EUV light is disposed between the condenser mirror and a reflecting mirror, and scattering particles mixed in the EUV light are adsorbed by the transmission filter. The EUV light passing through the transmission filter is deviated by the reflecting mirror, a illuminance distribution of the EUV light is uniformalized by fly eye mirrors, thereafter the EUV light is condensed by another condenser mirror, and then exposure is effected using the condensed EUV light as an exposure beam.

Abstract: Two stages (WS1, WS2) holding wafers can independently move between a positional information measuring section (PIS) under an alignment system (24a) and an exposing section (EPS) under a projection optical system (PI). The wafer exchange and alignment are performed on the stage (WS1), during which wafer (W2) is exposed on the stage (WS2). A position of each shot area of wafer (WS1) is obtained as a relative position with respect to a reference mark formed on the stage WS1 in the section (PIS). Relative positional information can be used for the alignment with respect to an exposure pattern when the wafer (WS1) is moved to the section (EPS) to be exposed. Therefore, it is not necessary that a stage position is observed continuously in moving the stage. Exposure operations are performed in parallel by the two wafer stages (WS1) and (WS2) so as to improve the throughput.

Abstract: An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.

Abstract: In this exposure apparatus, position information such as the position, inclination, or shape of a first mirror, a second mirror, a third mirror, and a fourth mirror constituting a projection optical system PO is measured with a mirror monitor mechanism. Based on the obtained position information, the position or inclination or shape or the like of the first mirror, the second mirror, the third mirror, and the fourth mirror is corrected by actuators serving as a correction mechanism. As a result, in the case where changes occur in the projection optical system, these can be corrected in order to maintain the exposure conditions.

Abstract: Two stages (WS1), (WS2) holding wafers can independently move between a positional information measuring section (PIS) under an alignment system (24a) and an exposing section (EPS) under a projection optical system (PL). The wafer exchange and alignment are performed on the stage (WS1), during which wafer (W2) is exposed on the stage (WS2). A position of each shot area of wafer (WS1) is obtained as a relative position with respect to a reference mark formed on the stage (WS1) in the section (PIS). Relative positional information can be used for the alignment with respect to an exposure pattern when the wafer (WS1) is moved to the section (EPS) to be exposed. Therefore, it is not necessary that a stage position is observed continuously in moving the stage. Exposure operations are performed in parallel by the two wafer stages (WS1) and (WS2) so as to improve the throughput.

Abstract: The exposure apparatus is provided in its main body portion with laser diodes each having different wave-lengths, for illuminating light for alignment onto a mark of a grating form arranged on each of a reticle and a wafer. The main body portion of the exposure apparatus has photomultipliers for receiving the diffraction light returned from each of the reticle mark and the wafer mark. The alignment of the reticle mark with the wafer mark is implemented by comparing phase differences of optical beat signals converted photoelectrically by the photomultipliers and by means of a phase detection comparison system. The light fluxes are transmitted between photomultipliers the laser diodes and the alignment optical system disposed in the main body portion thereof through optical fibers. This arrangement enables the position transducer to reduce an influence of generated heat upon the position detection of the wafer as well as the exposure apparatus, even if a photodetector having a large calorific power is employed.