Patents by Inventor Kazuyoshi Hirose

Kazuyoshi Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170256911
    Abstract: A two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, particularly optical output , which includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode, wherein the first electrode is formed so as to supply the current to the active layer with a different density depending on the in-plane position on the first electrode.
    Type: Application
    Filed: August 28, 2015
    Publication date: September 7, 2017
    Applicants: KYOTO UNIVERSITY, ROHM CO., LTD., HAMAMATSU PHOTONICS K.K., MITSUBISHI ELECTRIC CORPORATION
    Inventors: Susumu NODA, Hitoshi KITAGAWA, Yong LIANG, Akiyoshi WATANABE, Kazuyoshi HIROSE
  • Publication number: 20170222399
    Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.
    Type: Application
    Filed: February 13, 2015
    Publication date: August 3, 2017
    Inventors: Kazuyoshi HIROSE, Akiyoshi WATANABE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Susumu NODA
  • Patent number: 9722396
    Abstract: A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: August 1, 2017
    Assignees: KYOTO UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Akiyoshi Watanabe, Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Susumu Noda
  • Patent number: 9698562
    Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: July 4, 2017
    Assignees: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Akiyoshi Watanabe, Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Susumu Noda
  • Patent number: 9667028
    Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: May 30, 2017
    Assignees: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Akiyoshi Watanabe, Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Susumu Noda
  • Patent number: 9583914
    Abstract: A semiconductor laser element is realized with high beam quality (index M2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice R3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 28, 2017
    Assignees: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Akiyoshi Watanabe, Yoshitaka Kurosaka, Takahiro Sugiyama, Susumu Noda
  • Publication number: 20170012407
    Abstract: A surface emitting laser element capable of emitting a main beam and a sub-beam, and a monitoring light detection element capable of detecting a light intensity of the sub-beam are included, the surface emitting laser element is a PCSEL, the main beam and the sub-beam are emitted in an upward direction of the surface emitting laser element and are inclined to each other at a predetermined angle, and respective changes in a peak light intensity of the main beam and a peak light intensity of the sub-beam with respect to a value of a driving current of the surface emitting laser element are correlated with each other. Therefore, if an output of the monitoring light detection element indicating the peak light intensity of the sub-beam is used, the peak light intensity of the main beam can be estimated.
    Type: Application
    Filed: November 10, 2014
    Publication date: January 12, 2017
    Inventors: Akiyoshi WATANABE, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Susumu NODA
  • Publication number: 20160020581
    Abstract: A semiconductor laser element is realized with high beam quality (index M2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice R3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle.
    Type: Application
    Filed: February 27, 2014
    Publication date: January 21, 2016
    Inventors: Kazuyoshi HIROSE, Akiyoshi WATANABE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Susumu NODA
  • Publication number: 20160020576
    Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.
    Type: Application
    Filed: March 7, 2014
    Publication date: January 21, 2016
    Inventors: Akiyoshi WATANABE, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Susumu NODA
  • Patent number: 9219348
    Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: December 22, 2015
    Assignees: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Akiyoshi Watanabe, Kazuyoshi Hirose, Kousuke Shibata, Takahiro Sugiyama, Yoshitaka Kurosaka, Susumu Noda
  • Patent number: 9130339
    Abstract: When an end-face-emitting photonic crystal laser element 10 is seen in an X axis, one end of an upper electrode E2 overlaps a laser light exit surface SF, the upper electrode E2 and an opposite end face SB are separated from each other, the upper electrode E2 is separated from both lateral end faces SR, SL, and one end of an active layer 3B overlaps the laser light exit surface SF.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: September 8, 2015
    Assignees: KYOTO UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Susumu Noda, Yoshitaka Kurosaka, Akiyoshi Watanabe, Kazuyoshi Hirose, Takahiro Sugiyama
  • Patent number: 9048624
    Abstract: According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (??) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (?3) of the other laser beam is set to be less than 90 degrees.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: June 2, 2015
    Assignees: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Susumu Noda, Yoshitaka Kurosaka, Akiyoshi Watanabe, Kazuyoshi Hirose, Takahiro Sugiyama
  • Publication number: 20150034901
    Abstract: A semiconductor light emitting element includes an electrode 8, an active layer 3, a photonic crystal layer 4, and an electrode 9. Conductivity types between the active layer 3 and the electrode 8 and between the active layer 3 and the electrode 9 differ from each other. The electrode 8, the active layer 3, the photonic crystal layer 4, and the electrode 9 are stacked along the X-axis. The X-axis passes through a central part 8a2 of the opening 8a when viewed from the axis line direction of the X-axis. The end 9e1 of the electrode 9 and the end 8e1 of the opening 8a substantially coincide with each other when viewed from the axis line direction of the X-axis.
    Type: Application
    Filed: November 7, 2012
    Publication date: February 5, 2015
    Applicants: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Susumu Noda, Yoshitaka Kurosaka, Akiyoshi Watanabe, Kazuyoshi Hirose, Takahiro Sugiyama
  • Publication number: 20140348193
    Abstract: According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (??) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (?3) of the other laser beam is set to be less than 90 degrees.
    Type: Application
    Filed: December 5, 2012
    Publication date: November 27, 2014
    Inventors: Susumu Noda, Yoshitaka Kurosaka, Akiyoshi Watanabe, Kazuyoshi Hirose, Takahiro Sugiyama
  • Publication number: 20140247852
    Abstract: When an end-face-emitting photonic crystal laser element 10 is seen in an X axis, one end of an upper electrode E2 overlaps a laser light exit surface SF, the upper electrode E2 and an opposite end face SB are separated from each other, the upper electrode E2 is separated from both lateral end faces SR, SL, and one end of an active layer 3B overlaps the laser light exit surface SF.
    Type: Application
    Filed: August 31, 2012
    Publication date: September 4, 2014
    Applicants: HAMAMATSU PHOTONICS K.K., KYOTO UNIVERSITY
    Inventors: Susumu Noda, Yoshitaka Kurosaka, Akiyoshi Watanabe, Kazuyoshi Hirose, Takahiro Sugiyama
  • Patent number: 8693516
    Abstract: A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: April 8, 2014
    Assignees: Hamamatsu Photonics K.K., Kyoto University
    Inventors: Kazuyoshi Hirose, Shinichi Furuta, Akiyoshi Watanabe, Takahiro Sugiyama, Kousuke Shibata, Yoshitaka Kurosaka, Susumu Noda
  • Publication number: 20140036947
    Abstract: The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).
    Type: Application
    Filed: February 29, 2012
    Publication date: February 6, 2014
    Applicants: HAMAMATSU PHOTONICS K.K., KYOTO UNIVERSITY
    Inventors: Akiyoshi Watanabe, Kazuyoshi Hirose, Kousuke Shibata, Takahiro Sugiyama, Yoshitaka Kurosaka, Susumu Noda
  • Publication number: 20130121358
    Abstract: A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blende structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blende structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
    Type: Application
    Filed: June 21, 2011
    Publication date: May 16, 2013
    Applicants: KYOTO UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Shinichi Furuta, Akiyoshi Watanabe, Takahiro Sugiyama, Kousuke Shibata, Yoshitaka Kurosaka, Susumu Noda