Patents by Inventor Kazuyoshi Yamashita

Kazuyoshi Yamashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200406698
    Abstract: This spring used for a suspension device for a vehicle is provided with: a metal wire material which constitutes a spring section and which has a cover layer provided on the surface thereof; and a seat section which is subjected to a load acting on the spring section, is formed from an elastically deformable material, and is bonded to the cover layer by an adhesive. The difference between the hardness of the seat section and the hardness of the adhesive is greater than the difference between the hardness of the adhesive and the hardness of the cover layer.
    Type: Application
    Filed: March 6, 2019
    Publication date: December 31, 2020
    Applicant: CHUO HATSUJO KABUSHIKI KAISHA
    Inventors: Hiroyuki OGISO, Kazuyoshi NONO, Hideo YAMASHITA, Yuichi NAKAZAWA
  • Publication number: 20200400205
    Abstract: Disclosed is a spring for a suspension device for a vehicle. The spring includes: a spring section made of a coil-shaped wire; and a seat section made of an elastically deformable material, brought into contact with a seat turn section of the spring section, and bearing load acting on the spring section. When a direction orthogonal to a direction of the load acting on the spring section is set as a widthwise direction, at least a part of the seat section is provided with a movable region support section having a widthwise dimension less than or equal to predetermined times a diameter dimension of the wire.
    Type: Application
    Filed: March 1, 2019
    Publication date: December 24, 2020
    Applicant: CHUO HATSUJO KABUSHIKI KAISHA
    Inventors: Hiroyuki OGISO, Kazuyoshi NONO, Hideo YAMASHITA, Yuichi NAKAZAWA
  • Publication number: 20200391565
    Abstract: This spring used for a suspension device for a vehicle is provided with: a metal wire material which constitutes a spring section and which has a cover layer provided on the surface thereof; and a seat section which is subjected to a load acting on the spring section, is formed from an elastically deformable material, has a groove section into which the wire material fits, and is bonded to the wire material by an adhesive. The minimum thickness of the portion of the adhesive, which protrudes from the groove section, is greater than or equal to the thickness of an adhesion layer formed in the groove section.
    Type: Application
    Filed: March 6, 2019
    Publication date: December 17, 2020
    Applicant: CHUO HATSUJO KABUSHIKI KAISHA
    Inventors: Hiroyuki OGISO, Kazuyoshi NONO, Yuichi NAKAZAWA, Hideo YAMASHITA
  • Patent number: 10840278
    Abstract: An imaging device includes a pixel array including a plurality of pixel units in a matrix arrangement. At least a first pixel unit of the plurality of pixel units includes a substrate including a first photoelectric conversion region and a second photoelectric conversion region, and a first layer over the substrate and including a first pixel circuit and a second pixel circuit. The first pixel unit includes a second layer over the first layer and including first and second wirings extending in a first direction, and a third layer over the second layer and including signal lines that extend in the second direction. The first pixel unit includes a first via that couples a first signal line to the first wiring, and a second via offset from the first via in the first direction and that couples a second signal line to the second wiring.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: November 17, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Kazuyoshi Yamashita
  • Patent number: 10784304
    Abstract: Provided is a solid-state imaging apparatus that is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: September 22, 2020
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Kazuyoshi Yamashita
  • Publication number: 20200296311
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: June 3, 2020
    Publication date: September 17, 2020
    Applicant: SONY CORPORATION
    Inventors: Takashi MACHIDA, Kazuyoshi YAMASHITA
  • Patent number: 10737495
    Abstract: A liquid ejecting apparatus includes a transport belt that transports a medium in a transport direction in a state in which the medium is supported on a medium supporting surface, a liquid ejecting head that ejects a liquid from a plurality of nozzles formed on a nozzle surface with respect to the medium supported on the medium supporting surface of the transport belt, and a controller that performs a flushing operation of ejecting the liquid from the nozzles as a maintenance operation for the liquid ejecting head, on a flushing area on the medium supporting surface adjacent to the medium with an interval therebetween.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: August 11, 2020
    Assignee: Seiko Epson Corporation
    Inventors: Shigenori Nakagawa, Hitotoshi Kimura, Junpei Yamashita, Kazuyoshi Mizuno
  • Publication number: 20200235150
    Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.
    Type: Application
    Filed: April 7, 2020
    Publication date: July 23, 2020
    Inventor: KAZUYOSHI YAMASHITA
  • Patent number: 10651213
    Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: May 12, 2020
    Assignee: SONY CORPORATION
    Inventor: Kazuyoshi Yamashita
  • Publication number: 20200127028
    Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Applicant: Sony Corporation
    Inventors: Jun Okuno, Kazuyoshi Yamashita
  • Publication number: 20200091213
    Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.
    Type: Application
    Filed: November 25, 2019
    Publication date: March 19, 2020
    Inventor: KAZUYOSHI YAMASHITA
  • Patent number: 10594969
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: March 17, 2020
    Assignee: Sony Corporation
    Inventors: Takashi Machida, Kazuyoshi Yamashita
  • Patent number: 10559609
    Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: February 11, 2020
    Assignee: Sony Corporation
    Inventors: Jun Okuno, Kazuyoshi Yamashita
  • Patent number: 10559608
    Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: February 11, 2020
    Assignee: Sony Corporation
    Inventors: Jun Okuno, Kazuyoshi Yamashita
  • Patent number: 10546887
    Abstract: Imaging sensors, imaging apparatuses, and methods of driving an image sensor are provided. An image sensor can include a semiconductor substrate with a photoelectric conversion element and a charge-conversion element. The sensor can further include a capacitance switch. A charge accumulation element is located adjacent the photoelectric conversion element. At least a portion of the charge accumulation element overlaps a charge accumulation region of the photoelectric conversion element. The charge accumulation element is selectively connected to the charge-voltage conversion element by the capacitance switch.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: January 28, 2020
    Assignee: SONY CORPORATION
    Inventor: Kazuyoshi Yamashita
  • Publication number: 20200029037
    Abstract: A photoelectric converter generates a charge corresponding to the exposure amount during an exposure period. The generated-charge retention portion and the output charge retention portion retain the charge. The generated-charge transfer portion transfers the charge from the photoelectric converter to the generated-charge retention portion to perform the transfer after the elapse of the exposure period. The retained-charge transfer portion transfers the charge retained in the generated-charge retention portion to the output charge retention portion to perform the transfer.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: YOSHIMICHI KUMAGAI, TAKASHI ABE, KAZUYOSHI YAMASHITA, RYOTO YOSHITA
  • Publication number: 20200007805
    Abstract: The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 2, 2020
    Applicant: SONY CORPORATION
    Inventors: Takashi MACHIDA, Kazuyoshi YAMASHITA
  • Patent number: 10510786
    Abstract: The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the precision of phase difference detection while suppressing deterioration of resolution in a solid-state imaging device having a global shutter function and a phase difference AF function. Provided is a solid-state imaging device including: a pixel array unit including, as pixels including an on-chip lens, a photoelectric conversion unit, and a charge accumulation unit, imaging pixels for generating a captured image and phase difference detection pixels for performing phase difference detection arrayed therein; and a driving control unit configured to control driving of the pixels. The imaging pixel is formed with the charge accumulation unit shielded from light.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: December 17, 2019
    Assignee: Sony Corporation
    Inventors: Jun Okuno, Kazuyoshi Yamashita
  • Publication number: 20190371841
    Abstract: An imaging device includes a pixel array including a plurality of pixel units in a matrix arrangement. At least a first pixel unit of the plurality of pixel units includes a substrate including a first photoelectric conversion region and a second photoelectric conversion region, and a first layer over the substrate and including a first pixel circuit and a second pixel circuit. The first pixel unit includes a second layer over the first layer and including first and second wirings extending in a first direction, and a third layer over the second layer and including signal lines that extend in the second direction. The first pixel unit includes a first via that couples a first signal line to the first wiring, and a second via offset from the first via in the first direction and that couples a second signal line to the second wiring.
    Type: Application
    Filed: February 8, 2018
    Publication date: December 5, 2019
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Kazuyoshi YAMASHITA
  • Patent number: 10490581
    Abstract: Disclosed herein is a solid-state imaging apparatus including: a semiconductor base; a photodiode created on the semiconductor base and used for carrying out photoelectric conversion; a pixel section provided with pixels each having the photodiode; a first wire created by being electrically connected to the semiconductor base for the pixel section through a contact section and being extended in a first direction to the outside of the pixel section; a second wire made from a wiring layer different from the first wire and created by being extended in a second direction different from the first direction to the outside of the pixel section; and a contact section for electrically connecting the first and second wires to each other.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: November 26, 2019
    Assignee: Sony Corporation
    Inventors: Mikiko Kobayashi, Kazuyoshi Yamashita